表面波等离子体源的发展现状

董太源; 叶坤涛; 刘维清

doi:10.7498/aps.61.145202

摘要

对微波放电产生的平板型表面波等离子体源进行了系统介绍,分析了表面波等离子体的工作原理, 探讨了维持表面波等离子体放电的能量吸收机制,介绍了由单模谐振腔阵列、亚波长衍射光栅及开槽天线阵列组成的新型波模转换器.表面波等离子体的产生机理、实现途径、参数特性和数值仿真等方面的研究进展及其所取得的成果,有利于促进新型表面波等离子体源走向产业化应用, 并促使微电子产业的功效取得新的突破.

关键词:

In this paper, a flat-type surface wave plasma (SWP) source generated by microwave discharg is introduced systematically. The principle of the surface wave plasma is analyzed and the energy absorption mechanism of the surface wave plasma discharge is explored. A novel wave-mode converter composed of the single-mode resonator array, sub-wavelength diffraction grating and a new type of slot antenna array is introduced. The research findings, such as the mechanism of the generation, the realization, the characteristics of plasma parameters and the numerical simulation of the new SWP sources are beneficial to industrial applications, will promote the effectiveness of the microelectronics industry and obtain a new breakthrough.

Keywords:

作者及机构信息

1.
江西理工大学理学院, 赣州 341000

Authors and contacts

1.
School of Science, Jiangxi University of Science and Technology, Ganzhou 341000, China

参考文献

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施引文献

[1]	Sugai H, Ghanashev I, Nagatsu M 1998 Plasma Sources Sci. Technol. 7 192
[2]	Sugai H (Translated by Zhang H B, Zhang D) 2002 Plasma Electric Engineering Science (Beijing: Science Press) pp56-60, pp134-145 (in Chinese) [菅井秀郎著, 张海波, 张丹译 2002 等离子体电子工程学 (北京:科学出版社) 第56—60页, 第134—145页]
[3]	Ganachev I, Sugai H 2003 Surface and Coatings Technology 174-175 15
[4]	Odrobina I, Kudela J, Kando M 1998 Plasma Sources Sci. Technol. 7 238
[5]	Sugai H, Ahn T H, Ghanashev I, Goto M, Nagatsu M, Nakamura K, Suzuki K, Toyoda H 1997 Plasma Phys. Control. Fusion 39 A445
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[9]	Yamauchi T, Aoki K, Kanoh M 2001 J. Vac. Sci. Technol. A 19 2433
[10]	Nagatsu M, Xu G, Ghanashev I, Kanoh M , Sugai H 1997 Plasma Sources Sci. Technol. 6 427
[11]	Ghanashev I, Nagatsu M, Xu G, Sugai H 1997 Jpn. J. Appl. Phys. 36 4704
[12]	Ghanashev I, Sugai H 2000 Phys. Plasmas 7 3051
[13]	Nagatsu M, Xu G, Yamage M, Kanoh M, Sugai H 1996 Jpn. J. Appl. Phys. 35 L341
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[15]	Nagatsu M, Ghanashev I, Sugai H 1998 Plasma Sources Sci. Technol. 7 230
[16]	Nagatsu M, Naito K, Ogino A, Nanko S 2006 Plasma Sources Sci. Technol. 15 37
[17]	Ghanashev I, Nagatsu M, Sugai H 1997 Jpn. J. Appl. Phys. 36 337
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[31]	Zhan R J, Wu C F, Wen X H, Zhu X D, Zhou H Y 2011 Vacuum Science and Technology 21 30 (in Chinese) [詹如娟, 吴丛风, 温小辉, 朱晓东, 周海洋 2001 真空科学与技术 21 30]
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[33]	Ou Q R, Liang R Q 2002 Vacuum & Cryogenics 8 28 (in Chinese) [欧琼荣, 梁荣庆 2002 真空与低温 8 28]
[34]	Nie C H, Su X B 2000 Vacuum & Cryogenics 6 111 (in Chinese) [聂传辉, 苏小保 2000 真空与低温 6 111]
[35]	Liu M H, Sugai H, Hu X W, Ishijima T, Jiang Z H, Li B, Dan M 2006 Acta Phys. Sin. 55 5905 (in Chinese) [刘明海, 菅井秀郎, 胡希伟, 石岛芳夫, 江中和, 李斌, 但敏 2006 物理学报 55 5905]
[36]	Chen Z Q, Liu M H, Zhou P Q, Chen W, Lan C H, Hu X W 2008 Plasma Sci. Technol. 10 655
[37]	Lan C H, Hu X W, Liu M H 2009 Chin. Phys. Lett. 26 035204
[38]	Lan C H, Chen Z Q, Liu M H, Jiang Z H, Hu X W 2009 Plasma Sci. Technol. 11 66
[39]	Chen Z Q, Liu M H, Lan C H, Chen W, Luo Z Q, Hu X W 2008 Chin. Phys. Lett. 25 4333
[40]	Lan C H, Hu X W, Jiang Z H, Liu M H 2010 Acta Phys. Sin. 59 4093 (in Chinese) [蓝朝辉, 胡希伟, 江中和, 刘明海 2010 物理学报 59 4093]
[41]	Lan C H, Hu X W, Liu M H 2011 Acta Phys. Sin. 60 025205 (in Chinese) [蓝朝辉, 胡希伟, 刘明海 2011 物理学报 60 025205]
[42]	Chen F F (Translated by Lin G H) 1980 Introduction to Plasma Physics (Beijing: People's Education Press) pp2-11 (in Chinese) [Chen F F著, 林光海译 1980 等离子体物理学导论 (北京:人民教育出版社) 第2—11页]
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[44]	Trivelpiece A W, Gould R W 1959 J. Appl. Phys. 30 1784
[45]	Moisan M 1974 Plasma Phys. 16 1
[46]	Shivarova A, Zhelyazkov I 1978 Plasma Phys. 20 1049
[47]	Moisan M, Zakrzewski Z, Pantel R 1979 J. Phys. D: Appl. Phys. 12 219
[48]	Moisan M, Zakrzewski Z, Pantel R, Leprince P 1984 IEEE Trans. Plasma Sci. PS-12 203
[49]	Moisan M, Zakrzewski Z 1991 J. Phys. D: Appl. Phys. 24 1025
[50]	Moisan M, Beaudry C, Leprince P 1974 Phys. Lett. 50A 125
[51]	Moisan M, Beaudry C, Leprince P 1975 IEEE Trans. Plasma Sci. PS-3 55
[52]	Zakrzewski Z, Moisan M, Glaude V M N, Beaudry C, Leprince P 1977 Plasma Phys. 19 77
[53]	Moisan M, Shivarova A, Trivelpiece A W 1982 Plasma Phys. 24 1331
[54]	Moisan M 1987 Rev. Sci. Instrum. 58 1895
[55]	Margot J, Moisan M 1993 J. Plasma Phys. 49 357
[56]	Tian C, Nozawa T, Ishibasi K, Kameyama H, Morimoto T 2006 J. Vac. Sci. Technol. A 24 1421
[57]	Yasaka Y, Ishii N, Yamamoto T, Ando M, Takahashi M 2004 IEEE Trans. Plasma Sci. 32 101
[58]	Yamamoto T, Ono M, Ando M, Ando M, Goto N, Ishii N, Yasaka Y 2001 Jpn. J. Appl. Phys. 40 380
[59]	Yasaka Y, Koga K, Ishii N, Yamamoto T, Ando M, Takahashi M 2002 Phys. Plasmas 9 1029
[60]	Yasaka Y, Nozaki D, Koga K, Ando M, Yamamoto T, Goto N, Ishii N, Morimoto T 1999 Plasma Sources Sci. Technol. 8 530
[61]	Nagatsu M, Terashita F, Nonaka H, Xu L, Nagata Y, Koide Y 2005 Appl. Phys. Lett. 86 211502
[62]	Xu L, Terashita F, Nonaka1 H, Ogino A, Nagata T, Koide Y, Nanko S, Kurawaki I, Nagatsu M 2006 J. Phys. D: Appl. Phys. 39148
[63]	Moreau S, Moisan M, Tabrizian M, Barbeau J, Pelletier J, Ricard A, Yahia L H 2000 J. Appl. Phys. 88 1166
[64]	Miyamoto Y, Tamai Y, Daimon K, Esaki M, Takeno H, Yasaka Y 2006 Thin Solid Films 506-507 622
[65]	Tsuji A, Yasaka Y, Takeno H 2008 Surface & Coatings Technol. 202 5306
[66]	Tamai Y, Miyamoto Y, Hayashi T, Tsuji A, Takeno H, Yasaka Y 2006 Thin Solid Films 506-507 626
[67]	Jain A P, Parashar J 2005 J. Phys. 65 311
[68]	Sugai H, Ghanashev I, Hosokawa M, Mizuno K, Nakamura K, Toyoda H, Yamauchi K 2001 Plasma Sources Sci. Technol. 10 378
[69]	Kumar G, Tripathi V K 2008 Phys. Plasmas 15 073504
[70]	Levaton J, Ricard A, Henriques J, Silva H R T, Amorim J 2006 J. Phys. D: Appl. Phys. 39 3285
[71]	Aramaki M, Kobayashi J, Kono A, Stamate E, Sugai H 2006 Thin Solid Films 506-507 679
[72]	Hotta Y, Toyoda H, Sugai H 2007 Thin Solid Films 515 4983
[73]	Stamate E, Holtzer N, Sugai H 2006 Thin Solid Films 506-507 571
[74]	Siry M, Sakata S, Terebessy T, Kando M 2006 Jpn. J. Appl. Phys. 45 2749
[75]	Nakao S, Stamate E, Sugai H 2007 Thin Solid Films 515 4869
[76]	Mezerette D, Kuroda M, Sugai H 2005 Thin Solid Films 475 178
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