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As the complementary metal-oxide semiconductor (CMOS) compatible with group IV materials, germanium tin (GeSn) alloys have potential applications in photonics and microelectronics. With the increase of tin (Sn) content, GeSn alloys can change from indirect bandgap semiconductor to direct bandgap semiconductor. On the other hand, GeSn alloys have a higher hole mobility than Ge and can be used as channel materials in metal-oxide-semiconductor-field-effect transistors (MOSFETs). Therefore, the properties of GeSn alloys are studied extensively. In this work, the solid-phase reaction between Ni and GeSn is investigated under microwave annealing (MWA) and rapid thermal annealing (RTA) conditions. We use the four-point probe method to measure the sheet resistance, the atomic force microscopy (AFM) to examine the surface morphology of the sample, the cross-section transmission electron microscopy (XTEM) to analyze the microstructures of the metal stanogermanides, and energy dispersive X-ray spectrometer (EDX) to observe the elements’ distribution of different samples. It is shown that the flat Nickel stanogermanide (NiGeSn) films are obtained at 300 ℃ for MWA and at 350 ℃ for RTA. By analyzing the distributions of sample elements, we find that Sn atoms continue to diffuse into the NiGeSn layer and are segregate mainly at the interface between NiGeSn and GeSn. However, the Ti atoms move from interlayer to the surface after being annealed. We propose that this method is a promising way of developing GeSn devices in the future.
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Keywords:
- microwave annealing /
- rapid thermal annealing /
- germanium tin alloy /
- Ti interlayer
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图 1 Ni/Ti/GeSn的方块电阻随退火温度的变化
Fig. 1. Sheet resistance of Ni/Ti/GeSn samples annealed at various temperatures.
图 2 Ni/Ti/GeSn样品不同退火方式、不同退火温度下的AFM测试图 (a)−(c) 微波退火150, 250, 350 ℃; (d)−(f) 快速热退火150, 250, 350 ℃
Fig. 2. AFM images of annealed Ni/Ti/GeSn samples: (a)−(c) MWA at 150, 250 and 350 ℃; (d)−(f) RTA at 150, 250 and 350 ℃.
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[1] Wang P P 1978 IEEE Trans. Electron. Devices 25 779
Google Scholar
[2] Wang H J, Liu Y, Liu M S, Zhang Q F, Zhang C F, Ma X H, Zhang J C, Hao Y, Han G Q 2015 Superlattices Microstruct. 83 401
Google Scholar
[3] Liu Q, Cai J H, He J Z, Wang Y Z, Zhang D L, Liu C, Ren W, Yu W J, Liu X K, Zhao Q T 2017 J. Infrared Millimeter Waves 36 543
Google Scholar
[4] Zhang L, Wang Y S, Chen N L, Lin G Y, Li C, Huang W, Chen S Y, Xu J F, Wang J Y 2016 J. Non-Cryst. Solids 448 74
Google Scholar
[5] Onufrijevs P, Ščajev P, Medvids A, Andrulevicius M, Nargelas S, Malinauskas T, Stanionyte S, Skapas M, Grase L, Pludons A, Oehme M, Lyutovich K, Kasper E, Schulze J, Cheng H H 2020 Opt. Laser Technol. 128 106200
Google Scholar
[6] Han G Q, Su S J, Zhan C L, Zhou Q, Yang Y, Wang L X, Guo P F, Wong C P, Shen Z X, Cheng B W, Yeo Y C 2011 IEEE International Electron Devices Meeting Washington, DC Dec 05–07, 2011 p402
[7] Wang L X, Su S J, Wang W, Gong X, Yang Y, Guo P F, Zhang G Z, Xue C L, Cheng B W, Han G Q, Yeo Y C 2013 Solid-State Electron. 83 66
Google Scholar
[8] Li H, Cheng H H, Lee L C, Lee C P, Su L H, Suen Y W 2014 Appl. Phys. Lett. 104 241904
Google Scholar
[9] Demeulemeester J, Schrauwen A, Nakatsuka O, Zaima S, Adachi M, Shimura Y, Comrie C M, Fleischmann C, Detavernier C, Temst K, Vantomme A 2011 Appl. Phys. Lett. 99 211905
Google Scholar
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Google Scholar
[11] Liu Y, Wang H J, Yan J, Han G Q 2014 ECS Solid State Lett. 3 11
Google Scholar
[12] Wan W J, Ren W, Meng X R, Ping Y X, Wei X, Xue Z Y, Yu W J, Zhang M, Di Z F, Zhang B 2018 Chin. Phys. Lett. 35 056802
Google Scholar
[13] Khiangte K R, Rathore J S, Sharma V, Laha A, Mahapatra S 2018 Solid State Commun. 284–286 88
Google Scholar
[14] 孟骁然, 平云霞, 常永伟, 魏星, 俞文杰, 薛忠营, 狄增峰, 张苗, 张波 2015 功能材料与器件学报 21 85
Meng X R, Ping Y X, Chang Y W, Wei X, Yu W J, Xue Z Y, Di Z F, Zhang M, Zhang B 2015 J. Funct. Mater. Devices 21 85
[15] Huang W Q, Cheng B W, Xue C L, Liu Z 2015 J. Appl. Phys. 118 165704
Google Scholar
[16] Lan H S, Chang S T, Liu C W 2017 Phys. Rev. B 95 201201
Google Scholar
[17] Wirths S, Geiger R, Driesch N V D, Mussler G, Stoica T, Mantl S, Lkonic Z, Luysberg M, Chiussi S, Hartmann J M, Sigg H, Faist J, Buca D, Grützmacher D 2015 Nat. Photonics 9 88
Google Scholar
[18] Yi S H, Shu K, Liao C, Hsu C W, Huang J Y 2018 IEEE Electron. Device Lett. 39 1278
Google Scholar
[19] Liu T H, Chiu P Y, Chuang Y, Liu C Y, Shen C H, Luo G L, Li J Y 2018 IEEE Electron. Device Lett. 39 468
Google Scholar
[20] Quintero A, Gergaud P, Hartmann J M, Delaye V, Bernier N, Cooper D, Saghi Z, Reboud V, Cassan E, Rodriguez P 2020 ECS Trans. 98 365
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Google Scholar
[22] Quintero A, Gergaud P, Hartmann J M, Reboud V, Cassan E, Rodriguez P 2020 Mater. Sci. Semicond. Process. 108 104890
Google Scholar
[23] Ping Y X, Hou C L, Zhang C M, Yu W J, Xue Z Y, Wei X, Peng W, Di Z F, Zhang M, Zhang B 2017 J. Alloys Compd. 693 527
Google Scholar
[24] Takeuchi S, Sakai A, Nakatsuka O, Ogawa M, Zaima S 2008 Thin Solid Films 517 159
Google Scholar
[25] 胡成 2013 硕士学位论文 (上海: 复旦大学)
Hu C 2013 M. S. Thesis (Shanghai: Fudan University) (in Chinese)
[26] 周祥标, 许鹏, 付超超, 吴东平 2016 半导体技术 41 456
Google Scholar
Zhou X B, Xu P, Fu C C, Wu D P 2016 Semicond. Technol. 41 456
Google Scholar
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