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在具有自旋-轨道耦合效应的材料中, 电荷流能够诱导产生垂直于电流方向的纯自旋流, 当其注入近邻的磁性层时, 会对其磁矩产生自旋-轨道矩. 自旋-轨道矩能够快速、高效地翻转磁矩, 为开发高性能的自旋电子器件提供了一种极佳的磁矩操控方式. 二维材料由于具有很多的优点, 如种类丰富、具有多样化的晶体结构和对称性、能够克服晶格失配形成高质量的异质结、具有强自旋-轨道耦合、电导率可调等, 为研究自旋-轨道矩提供了独特的平台, 因此引起了人们的广泛关注. 本文涵盖了近年来与二维材料及其异质结构中自旋-轨道矩研究相关的最新进展, 主要包括了基于非磁性二维材料(如MoS2, WSe2, WS2, WTe2, TaTe2, MoTe2, NbSe2, PtTe2, TaS2等)和磁性二维材料(如Fe3GeTe2, Cr2Ge2Te6等)的异质结中自旋-轨道矩的产生、表征和对磁矩的操控等. 最后指出了目前研究中尚未解决的问题与挑战.The spin-orbit torque generated by charge current in a strong spin-orbit coupling material provides a fast and efficient way to manipulate the magnetic moment in adjacent magnetic layers, which is expected to be used for developing low-power, high-performance spintronic devices. Two-dimensional materials have attracted great attention, for example, they have abundant species, a variety of crystal structures and symmetries, good adjustability of spin-orbit coupling strength and conductivity, and good ability to overcome the lattice mismatch to form high-quality heterojunctions, thereby providing a unique platform for studying the spin-orbit torques. This paper covers the latest research progress of spin-orbital torques in two-dimensional materials and their heterostructures, including their generations, characteristics, and magnetization manipulations in the heterostructures based on non-magnetic two-dimensional materials (such as MoS2, WSe2, WS2, WTe2, TaTe2, MoTe2, NbSe2, PtTe2, TaS2, etc.) and magnetic two-dimensional materials (such as Fe3GeTe2, Cr2Ge2Te6, etc.). Finally, some problems remaining to be solved and challenges are pointed out, and the possible research directions and potential applications of two-dimensional material spin-orbit torque are also proposed.
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Keywords:
- two-dimensional materials /
- spin-orbit coupling /
- spin-orbit torque /
- current-driven magnetization switching
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图 1 MoS2/Py异质结中ST-FMR信号的对称(a)和反对称(b)振幅随外加磁场与平面夹角θ的依赖关系(插图为基于MoS2/Py异质结的ST-FMR器件光学显微镜图)[59]; (c) MX2/CoFeB 异质结的SOT测量装置示意图; (d) 二次谐波方法测得二阶霍尔电阻与φ的函数关系, 外加磁场为100 Oe (1 Oe = 103/(4π) A/m)[60]; (e) WS2/Py双层器件几何结构示意图, 其中Vg通过SiO2介质层施加; (f)Vg对Py和WS2/Py双层的转矩比
$ {\tau }_{\rm{FL}}/{\tau }_{\rm{DL}} $ 调控特性[61]Fig. 1. Out-of-plane (OOP) angular (the applied field is described by the polar angle) dependence of symmetric (a) and antisymmetric (b) components of the ST-FMR signal based on MoS2/Py heterostructure (the inset is photo image of ST-FMR device)[59]; (c) measurement setup of SOT measurements for the MX2/CoFeB bilayer; (d) second-harmonic Hall resistance as a function of φ with an external magnetic field 100 Oe applied[60]; (e) schematic of the WS2/Py bilayer device geometry, where Vg was applied through the SiO2 dielectric layer; (f) torque ratio
$ {\tau }_{\rm{FL}}/{\tau }_{\rm{DL}} $ dependence of Vg for Py and WS2/Py bilayer[61].图 2 (a) WTe2/Py异质结样品几何结构示意图; (b) WTe2/Py器件的对称和反对称ST-FMR信号与面内磁场角度的依赖关系, 其中电流平行于a轴[58]; (c) 由MOKE图像捕捉到的电流驱动磁矩翻转过程[62]; (d) 自旋电导率随MoTe2厚度的变化关系[65]; (e) MoTe2单斜1T′相的晶体结构和20层MoTe2薄膜的能带结构[70]; (f) PtTe2/Py器件ST-FMR测量SOT效率ξSOT和自旋霍尔电导率
$ {\sigma }_{\rm{s}} $ 的厚度依赖性; (g) PtTe2/Au/CoTb结构和PtTe2中电流产生的SOT的示意图; (h)在不同的面内磁场下, PtTe2中电流产生的SOT驱动具有垂直磁各向异性的CoTb层磁矩翻转[68]Fig. 2. (a) Schematic of the bilayer WTe2/Py sample geometry; (b) symmetric and antisymmetric ST-FMR resonance components for a WTe2 (5.5 nm)/Py (6 nm) device as a function of in-plane magnetic-field angle, with current applied parallel to the a-axis[58]; (c) switching process captured by MOKE images[62]; (d) spin conductivities as a function of the thickness of MoTe2, where σS stands for the conventional damping-like torque, σB stands for the out-of-plane damping-like torque, and σT stands for the out-of-plane field-like torque[65]; (e) crystal structure of the monoclinic 1T′ phase of MoTe2 and band structure of a MoTe2 slab with 20 monolayers[70]; (f) thickness dependence of ξSOT and spin Hall conductivity σs of PtTe2/Py measured by ST-FMR; (g) schematic layout for PtTe2/Au/CoTb stack and the SOT generated by the majority of current flowing in PtTe2; (h) current-induced switching of the CoTb layer by SOT from PtTe2 under different in-plane field[68].
图 3 FGT/Pt双层器件的示意图(a)和SOT驱动的垂直磁矩翻转(b)[88]; (c) SOT驱动FGT磁矩翻转有效翻转电流随施加面内磁场的变化[89]; (d) 基于FGT的磁存储器件原理图及电流诱导的矫顽场大幅度降低, 从而降低写入电流密度[90]; (e) 基于CGT/Ta异质结Hall器件的原理图和4 K温度下施加流过Ta的电流Idc和平面内磁场Hx组合时的磁矩mz相图[91]; (f) FGT/WTe2双层结构的原子示意图和不同电流密度下FGT/WTe2 霍尔条在10 K垂直磁场下的反常霍尔电阻[92]
Fig. 3. Schematic view (a) and SOT-driven perpendicular magnetization switching (b) in the FGT/Pt bilayer device[88]; (c) current-induced magnetization switching of FGT and effective switching current as a function of applied in-plane magnetic field[89]; (d) schematic of FGT-based magnetic memory device and the current-induced substantial reduction of the coercive field and then reduction of the write current[90]; (e) schematic of a fabricated Hall bar device from a CGT/Ta heterostructure and phase diagram of mz for applied combinations of Idc and Hx at 4 K[91]; (f) atomic schematic view of FGT/WTe2 bilayer structure and anomalous Hall resistance of the FGT/WTe2 Hall bar under a perpendicular magnetic field at 10 K with various current densities[93].
表 1 已报道的实验研究工作中TMD材料的晶体结构、制备方法、TMD/FM异质结中的SOT的表征方法以及自旋霍尔电导
Table 1. Crystal structure, preparation method, method for SOT measurement of the TMD/FM heterostructure, and spin Hall conductance of TMD materials in the previous studies.
TMD材料 空间群 制备方法 表征方法 自旋霍尔电导$/[{10}^{3}({\hbar /2{\rm{e}}} )$ (Ω·m)–1] 文献 MoS2 P6/mmc CVD SHH $ {\sigma }_{\rm{A}}= $ 2.9 [60] WSe2 P6/mmc CVD SHH $ {\sigma }_{\rm{A}}= $ 5.5 [60] WS2 P6/mmc CVD SHH $ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $ observed [61] WTe2 Pmn21 Exfoliation ST-FMR/SHH $ {\sigma }_{\rm{A}}= $ 9 ± 3, $ {\sigma }_{\rm{S}}= $ 8 ± 2, $ {\sigma }_{\rm{B}}= $ 3.6 ± 0.8 [58] WTe2 Pmn21 Exfoliation ST-FMR/SHH $ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $, ${\sigma }_{\rm B}$ observed [62] TaTe2 C2/m Exfoliation ST-FMR/SHH $ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $, ${\sigma }_{\rm B}$ observed [64] MoTe2 P21/m Exfoliation ST-FMR ${\sigma }_{\rm{S} }=4.4 —8.0,$ ${\sigma }_{\rm{B} }=0.04—1.6,$ ${\sigma }_{\rm{T} }=0.026—1.0$ [65] NbSe2 P63/mmc Exfoliation ST-FMR ${\sigma }_{\rm{A} }=0— 40,$ ${\sigma }_{\rm{S} }=0— 13,$ ${\sigma }_{\rm{T} }=- 2—3.5$ [66] PtTe2 — CVD ST-FMR ${\sigma }_{\rm{S} }=0.20—1.6\times {10}^{2}$ [68] TaS2 — Ion-beam sputtering ST-FMR/SHH $ {\sigma }_{\rm{S}}=14.9\times {10}^{2} $ [69] -
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