具有阻挡层的H等离子体处理增强型p-GaN栅AlGaN/GaN HEMT研究

黄兴杰; 邢艳辉; 于国浩; 宋亮; 黄荣; 黄增立; 韩军; 张宝顺; 范亚明

doi:10.7498/aps.71.20212192

摘要

采用H等离子体处理p-GaN盖帽层来制备p-GaN栅AlGaN/GaN高电子迁移率晶体管(HEMT). 在p-GaN层表面上先沉积2 nm的Al₂O₃薄膜, 以减少H等离子体注入p-GaN时对表面造成的损伤. 经研究表明沉积Al₂O₃阻挡层的器件栅极反向泄漏电流降低了一个数量级, 开关比提高了约3倍. 由于栅极泄露电流的减小, 关态击穿电压从410 V提高到780 V. 针对栅极反向泄漏减小的现象, 进行了变温I_G-V_G测试, 验证了栅极反向泄漏电流的主导机制是二维变程跳跃(Two-dimensional variable range hopping, 2D-VRH)模型. 分析了减小栅极反向电流的原因是由于Al₂O₃阻挡层改变了HR-GaN的表面态, 使陷阱能级的活化能升高. 此外, 器件动态特性也表现出更稳定的趋势, 这是Al₂O₃薄膜阻挡过多的H等离子体的注入, 使AlGaN势垒和沟道陷阱态数量减少, 电流崩塌效应减弱.

关键词:

Abstract

High electron mobility transistors(HEMTs)show tremendous potentials for high mobility, high breakdown voltage, low conduction, low power consumption, and occupy an important piece of the microelectronics field. The high-resistivity-cap-layer high electron mobility transistor (HRCL-HEMT) is a novel device structure. Based on the hole compensation mechanism, the p-GaN is converted into high resistance semiconductor material by hydrogen plasma implantation. Thus, the surface of the p-GaN layer will have a serious bombardment damage under the hydrogen plasma implantation. In practical work, it is also very challenging in the accurate controlling of the hydrogen injection rate, injection depth and injection uniformity. To achieve the required depth of injection, the injected hydrogen plasma is often more than the required dose or multiple injections times. The energy of hydrogen plasma plays a huge influence on the surface of the p-GaN layer.The leakage current will be generated on the device surface, which deteriorates the electrical performance of the device.In this work, to protect the surface of p-GaN layer, a 2-nm Al₂O₃ film is deposited on the surface of the p-GaN cap layer to reduce the implantation damage caused by hydrogen plasma treatment. The research shows that after the device deposited Al₂O₃ film prior to the hydrogen plasma treatment, the gate reverse leakage current is reduced by an order of magnitude, the ratio of I_ON to I_OFF is increased by about 3 times. Meanwhile, the OFF-state breakdown voltage is increased from 410 V to 780 V. In addition, when the bias voltage is 400 V, the values of dynamic R_ON of devices A and B are 1.49 and 1.45 respectively, the device B shows a more stable dynamic performance. To analyze the gate leakage mechanism, a temperature-dependent current I_G-V_G testing is carried out, and it is found that the dominant mechanism of gate leakage current is two-dimensional variable range hopping (2D-VRH) at reverse gate voltage. The reason for reducing the gate reverse current is analyzed, and the Al₂O₃ film increases the activation energy of trap level and changes the surface states of HR-GaN; furthermore, the Al₂O₃ film blocks the injection of too much H plasma, thereby reducing the density of AlGaN barrier and channel trap states, and weakening the current collapse.

Keywords:

作者及机构信息

1.
北京工业大学信息学部, 光电子技术教育部重点实验室, 北京　100124

2.
中国科学院苏州纳米技术与纳米仿生研究所, 纳米器件与应用重点实验室, 苏州　215123

3.
江西省纳米技术研究院, 纳米器件与工艺研究部暨南昌市先进封测重点实验室, 南昌　330200

通信作者: 邢艳辉, xingyanhui@bjut.edu.cn ; 张宝顺, bszhang2006@sinano.ac.cn ;

基金项目: 中国科学院青年创新促进会(批准号: 2020321)、国家自然科学基金(批准号: 61904192, 61731019, 61575008, 61775007)和北京市自然科学基金(批准号: 4202010, 4172011)资助的课题.

Authors and contacts

1.
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China

2.
Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

3.
Division of Nano-Devices and Technologies & Nanchang Key Laboratory of Advanced Packaging, Jiangxi Institute of Nanotechnology, Nanchang 330200, China

Corresponding author: Xing Yan-Hui, xingyanhui@bjut.edu.cn ; Zhang Bao-Shun, bszhang2006@sinano.ac.cn ;

Funds: Project supported by the Youth Innovation Promotion Association of CAS (Grant No. 2020321), and the National Natural Science Foundation of China (Grant Nos. 61904192, 61731019, 61575008, 61775007); Beijing Natural Science Foundation (Grant No.4202010, 4172011).

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参考文献

[1]	Chen K J, Haberlen O, Lidow A, Tsai C L, Ueda T, Uemoto Y, Wu Y F 2017 IEEE T. Electron. Dev. 64 779 Google Scholar
[2]	Efthymiou L, Longobardi G, Camuso G, Chien T, Chen M, Udrea F 2017 Appl. Phys. Lett. 110
[3]	Ambacher O, Foutz B, Smart J, et al. 2000 J. Appl. Phys. 87 334 Google Scholar
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[9]	Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I 2006 IEEE T. Electron. Dev. 53 356 Google Scholar
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[20]	Chen Y H, Zhang K, Cao M Y, Zhao S L, Zhang J C, Ma X H, Hao Y 2014 Appl. Phys. Lett. 104
[21]	Chen X, Zhong Y Z, Zhou Y, et al. 2020 Appl. Phys. Lett. 117
[22]	Zhao S L, Hou B, Chen W W, Mi M H, Zheng J X, Zhang J C, Ma X H, Hao Y 2016 IEEE T. Power Electr. 31 1517
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[26]	Jiang H X, Lyu Q F, Zhu R Q, Xiang P, Cheng K, Lau K M 2021 IEEE T. Electron. Dev. 68 653 Google Scholar
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施引文献

图 1 器件横截面示意图　(a)器件A; (b)器件B

Fig. 1. Diagram of depicts schematic cross-sections of the devices: (a) Device A; (b) device B.

下载: 全尺寸图片幻灯片

图 2 器件的I-V特性　(a)器件的转移特性; (b) 器件的输出特征

Fig. 2. I-V characteristics of all devices: (a) Transfer characteristics; (b) output characteristics.

下载: 全尺寸图片幻灯片

图 3 变温I_G-V_G特性　(a)器件A; (b)器件B

Fig. 3. Temperature dependent I_G-V_G characteristics : (a) Device A; (b) device B.

下载: 全尺寸图片幻灯片

图 4 (a)从–1— –10 V器件A的$ \mathrm{l}\mathrm{n}\sigma $与$ {(1000/T)}^{1/3} $的函数关系; (b)从–1 V— –10 V器件B的$ \mathrm{l}\mathrm{n}\sigma $与$ {(1000/T)}^{1/3} $的函数关系; (c)从–1— –10 V器件A的$ \mathrm{l}\mathrm{n}\sigma $与$ 1000/T $的函数关系; (d)从–1— –10 V器件B的$ \mathrm{l}\mathrm{n}\sigma $与$ 1000/T $的函数关系; 点是实验值, 直线是拟合值

Fig. 4. (a) $ \mathrm{l}\mathrm{n}\sigma $ of device A at V_G from –1 V to –10 V as a function of $ {(1/T)}^{1/3} $; (b) $ \mathrm{l}\mathrm{n}\sigma $ of device B at V_G from –1 V to –10 V as a function of $ {(1/T)}^{1/3} $; (c) $ \mathrm{l}\mathrm{n}\sigma $ of device A at V_G from –1 V to –10 V as a function of $ 1000/T $; (d) $ \mathrm{l}\mathrm{n}\sigma $ of device B at V_G from –1 V to –10 V as a function of $ 1000/T $; the point is experimental value and the fitted value is a straight line.

下载: 全尺寸图片幻灯片

图 5 (a)器件A和器件B的关态击穿电压对比; (b)器件A和器件B的电流崩塌对比; (c)纵向元素分布SIMS测试结果

Fig. 5. (a) OFF-state breakdown characteristics of device A and device B with substrate grounded; (b) normalized dynamic R_ON with various values of OFF-state V_DS stress from 1 V to 400 V of device A and device B; (c) vertical anatomy of H distribution.

下载: 全尺寸图片幻灯片

图 6 器件2D-VRH泄漏电流机制示意图和H等离子注入示意图　(a)器件A; (b)器件B

Fig. 6. Schematic of the Two-dimensional variable range hopping (2D-VRH) model for devices, and Hydrogen plasma treatment for (a) device A and (b) device B.

下载: 全尺寸图片幻灯片

表 1 在不同栅极电压下表面缺陷能级E_a

Table 1. Surface defect level E_a at different gate voltages.

器件E_a/meV 栅极电压/V
–10 –9 –8 –7 –6 –5 –4 –3 –2 –1

A 308 321 332 343 353 366 385 404 433 466
B 382 402 422 439 455 470 489 511 524 531

下载: 导出CSV

[1]	Chen K J, Haberlen O, Lidow A, Tsai C L, Ueda T, Uemoto Y, Wu Y F 2017 IEEE T. Electron. Dev. 64 779 Google Scholar
[2]	Efthymiou L, Longobardi G, Camuso G, Chien T, Chen M, Udrea F 2017 Appl. Phys. Lett. 110
[3]	Ambacher O, Foutz B, Smart J, et al. 2000 J. Appl. Phys. 87 334 Google Scholar
[4]	Jones E A, Wang F, Costinett D 2016 IEEE J. Em. Sel. Top. P. 4 707
[5]	Hu X, Simin G, Yang J, Khan M A, Gaska R, Shur M S 2000 Electron. Lett. 36 753 Google Scholar
[6]	Uemoto Y, Hikita M, Ueno H, et al. 2007 IEEE T. Electron. Dev. 54 3393 Google Scholar
[7]	Cai Y, Zhou Y G, Chen K J, Lau K M 2005 IEEE Electr. Device L. 26 435 Google Scholar
[8]	Tang Z K, Jiang Q M, Lu Y Y, Huang S, Yang S, Tang X, Chen K J 2013 IEEE Electr. Device L. 34 1373 Google Scholar
[9]	Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I 2006 IEEE T. Electron. Dev. 53 356 Google Scholar
[10]	Fujii T, Tsuyukuchi N, Iwaya M, Kamiyama S, Amano H, Akasaki I 2006 Jpn. J. Appl. Phys. 2 45 L1048 Google Scholar
[11]	Hwang I, Kim J, Choi H S, et al. 2013 IEEE Electr. Device L. 34 202 Google Scholar
[12]	Tapajna M, Hilt O, Bahat-Treidel E, Wurfl J, Kuzmik J 2016 IEEE Electr. Device L. 37 385 Google Scholar
[13]	Greco G, Iucolano F, Roccaforte F 2018 Mat. Sci. Semicon. Proc. 78 96 Google Scholar
[14]	Hao R H, Fu K, Yu G H, et al. 2016 Appl. Phys. Lett. 109
[15]	Nakamura S, Iwasa N, Senoh M, Mukai T 1992 Jpn. J. Appl. Phys. 31 1258 Google Scholar
[16]	Hao R H, Li W Y, Fu K, et al. 2017 IEEE Electr. Device L. 38 1567 Google Scholar
[17]	Mi M H, Ma X H, Yang L, Bin-Hou, Zhu J J, He Y L, Zhang M, Wu S, Hao Y 2017 Appl. Phys. Lett. 111
[18]	Hao R H, Xu N, Yu G H, Song L, Chen F, Zhao J, Deng X G, Li X, Cheng K, Fu K, Cai Y, Zhang X P, Zhang B S 2018 IEEE T. Electron. Dev. 65 1314 Google Scholar
[19]	Xu N, Hao R H, Chen F, et al. 2018 Appl. Phys. Lett. 113
[20]	Chen Y H, Zhang K, Cao M Y, Zhao S L, Zhang J C, Ma X H, Hao Y 2014 Appl. Phys. Lett. 104
[21]	Chen X, Zhong Y Z, Zhou Y, et al. 2020 Appl. Phys. Lett. 117
[22]	Zhao S L, Hou B, Chen W W, Mi M H, Zheng J X, Zhang J C, Ma X H, Hao Y 2016 IEEE T. Power Electr. 31 1517
[23]	Zhang Z L, Yu G H, Zhang X D, et al. 2016 IEEE T. Electron. Dev. 63 731 Google Scholar
[24]	Binari S C, Ikossi K, Roussos J A, et al. 2001 IEEE T. Electron. Dev. 48 465 Google Scholar
[25]	Vetury R, Zhang N Q Q, Keller S, Mishra U K 2001 IEEE T. Electron. Dev. 48 560 Google Scholar
[26]	Jiang H X, Lyu Q F, Zhu R Q, Xiang P, Cheng K, Lau K M 2021 IEEE T. Electron. Dev. 68 653 Google Scholar
[27]	Zhu M H, Ma J, Nela L, Erine C, Matioli E 2019 IEEE Electr. Device L. 40 1289 Google Scholar
[28]	Wei X, Zhang X D, Sun C, et al. 2021 IEEE T. Electron. Dev. 68 5041 Google Scholar
[29]	Yang S, Tang Z K, Wong K Y, Lin Y S, Liu C, Lu Y Y, Huang S, Chen K J 2013 IEEE Electr. Device L 34 1497 Google Scholar

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具有阻挡层的H等离子体处理增强型p-GaN栅AlGaN/GaN HEMT研究