FeSe/SrTiO<sub>3</sub>高温超导体中的电子条纹相

袁永浩; 薛其坤; 李渭

doi:10.7498/aps.71.20220118

摘要

单层FeSe/SrTiO₃中的界面超导增强是近年来高温超导领域的重要发现. 该体系中SrTiO₃衬底对FeSe的超导增强机制已被广泛研究, 其调控作用主要表现为两个方面: 电荷掺杂和界面电声耦合. 然而, 关于FeSe薄膜本身的电子特性研究还不够充分. 本文介绍该体系超导增强机制的新进展: FeSe薄膜中的电子条纹相及其与超导的关联. 通过扫描隧道显微镜结合分子束外延生长技术, 对不同厚度的FeSe薄膜进行了系统研究. 我们发现FeSe薄膜中电子倾向于排成条纹状结构, 并观测到该条纹相随层厚变化显现出从短程到长程的演化. 条纹相是一种电子液晶态, 它源于薄层FeSe中被增强的电子关联作用. 表面电子掺杂一方面会减弱FeSe薄膜中的电子关联作用, 逐渐抑制条纹相; 另一方面会诱导超导相变, 而剩余的条纹相涨落会对超导电性带来额外增强. 我们的结果加深了对低维界面超导体系的认识, 也揭示了FeSe薄膜本征的特异性, 完善了对FeSe/SrTiO₃超导增强机制的理解.

关键词:

Abstract

The enhancement of superconductivity in one unit-cell FeSe grown on SrTiO₃ is an important discovery in high-temperature superconductivity. In this system, the crucial role of the SrTiO₃ substrate has been extensively studied. Its contribution mainly manifests in two aspects: charge transfer and interfacial electron-phonon coupling. However, study of the intrinsic properties of the FeSe thin film itself is still insufficient. In this article, we review the latest research progress of the mechanism of the enhancement of superconductivity in FeSe/SrTiO₃, covering the newly discovered stripe phase and its relationship with superconductivity. By using scanning tunneling microscope and molecular beam epitaxy growth method, we find that the electrons in FeSe thin film tend to form stripe patterns, and show a thickness-dependent evolution of short-range to long-range stripe phase. The stripe phase, a kind of electronic liquid crystal state (smectic), originates from the enhanced electronic correlation in FeSe thin film. Surface doping can weaken the electronic correlation and gradually suppress the stripe phase, which can induce superconductivity as well. More importantly, the remaining smectic fluctuation provides an additional enhancement to the superconductivity in FeSe film. Our results not only deepen the understanding of the interfacial superconductivity, but also reveal the intrinsic uniqueness of the FeSe films, which further refines the mechanism of superconductivity enhancement in FeSe/SrTiO₃.

Keywords:

作者及机构信息

1.
清华大学低维量子物理国家重点实验室, 北京　100084

2.
清华大学量子信息前沿科学中心, 北京　100084

3.
北京量子信息科学研究院, 北京　100193

4.
南方科技大学, 深圳　518055

通信作者: 薛其坤, qkxue@mail.tsinghua.edu.cn ; 李渭, weili83@tsinghua.edu.cn

基金项目: 国家重点研发计划(批准号: 2016YFA0301002)和国家自然科学基金(批准号: 11674191)资助的课题.

Authors and contacts

1.
State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China

2.
Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084 China

3.
Beijing Academy of Quantum Information Sciences, Beijing 100193, China

4.
Southern University of Science and Technology, Shenzhen 518055, China

Corresponding author: Xue Qi-Kun, qkxue@mail.tsinghua.edu.cn ; Li Wei, weili83@tsinghua.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2016YFA0301002) and the National Natural Science Foundation of China (Grant No. 11674191).

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施引文献

图 1 FeSe的晶格结构及形貌表征^[40]　(a) FeSe晶格结构示意图; (b) 30层FeSe薄膜的STM形貌图, 图中迷宫状纹路即向列畴界; (c) FeSe薄膜畴界附近的形貌图; (d) 缺陷附近短程条纹态的形貌图

Fig. 1. Lattice structure of FeSe and its topographic images^[40]: (a) Lattice structure of FeSe; (b) STM topographic image of FeSe thin film, the maze-like patterns are the nematic domain walls; (c) topographic image near nematic domain wall; (d) short-range stripes near defects.

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图 2 条纹态与准粒子干涉^[40]　(a) 两个缺陷附近的形貌图; (b)—(p)不同能量下的微分电导图像, 从中可以观察到不随偏压改变的条纹态以及随偏压变化的准粒子干涉

Fig. 2. Stripes and quasiparticle interference^[40]: (a) STM topographic image of two impurities; (b)–(p) dI/dV maps under different energies, in which energy independent stripes and energy dependent quasiparticle interference patterns are observed.

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图 3 向列性与短程条纹态随温度的演化^[40]　(a)—(d) 向列畴界随温度的演化; (e)—(h) 短程条纹相随温度的演化; (i)向列相与短程条纹相的相图

Fig. 3. Temperature evolution of nematicity and short-range stripe phase^[40]: (a)–(d) Temperature evolution of nematic domain walls; (e)–(h) temperature evolution of short-range stripes; (i) phase diagram of nematic phase and short-range stripe phase.

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图 4 缺陷与短程条纹相之间的相互作用^[40]　(a), (b) 短程条纹相存在时, 缺陷态存在大于10º转角; (c) 77 K的缺陷态, 此时由于没有短程条纹相, 缺陷态也没有转角; (d) 缺陷态转角的示意图

Fig. 4. Interaction between defects and short-range stripes^[40]: (a), (b) The off-axis impurity state with the appearance of short-range stripes; (c) impurity state at 77 K, the off-axis effect is absent due to the lack of short-range stripes; (d) schematic of the off-axis impurities.

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图 5 双层FeSe的长程条纹相^[41]　(a) 微分电导图像中的长程条纹相; (b) 单畴形貌图中的长程条纹态以及对应的傅里叶变换; (c) 条纹态周期对能量依赖的分析结果

Fig. 5. Long-range stripe phase in 2 unit-cell (UC) FeSe^[41]: (a) Long-range stripe phase in a dI/dV map; (b) topographic image of long-range stripes in a single domain and the corresponding Fourier transformation result; (c) energy dependence analysis to the periodicity of stripes.

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图 6 条纹相的层厚依赖^[41]　(a) 单层及双层FeSe台阶附近的形貌图及它们对应的扫描隧道谱; (b)—(d) 该台阶附近不同能量的微分电导图像; (e) 二层及三层FeSe台阶附近的形貌图及它们对应的扫描隧道谱; (f)—(h) 该台阶附近不同能量的微分电导图像

Fig. 6. Thickness dependence of long-range stripe phase^[41]: (a) STM topographic image on a step edge between 1 UC and 2 UC FeSe and the corresponding dI/dV spectra; (b)–(d) dI/dV maps taken on this step edge with different energies; (e) STM topographic image on a step edge between 1 UC and 2 UC FeSe and the corresponding dI/dV spectra. (f)–(h) dI/dV maps taken on this step edge with different energies.

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图 7 不同层厚FeSe薄膜电子结构的示意图^[41]

Fig. 7. Electronic structures of FeSe thin films with different thickness^[41].

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图 8 表面Rb原子掺杂对条纹相的抑制^[41]　(a)—(e) 不同掺杂浓度下, 双层FeSe的表面形貌图; (f) 条纹相面积占比随掺杂浓度的变化关系.

Fig. 8. Suppression of stripe phase by surface Rb doping^[41]: (a)–(e) STM topographic images taken on 2 UC FeSe at different doping concentrations; (f) the stripe area ratio at different doping concentrations.

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图 9 双层、三层FeSe中由表面Rb原子掺杂引入的超导相^[41]　(a), (b) 双层FeSe上不同掺杂浓度下“好超导”与“坏超导”组的平均谱; (c), (d) 三层FeSe上不同掺杂浓度下“好超导”与“坏超导”组的平均谱; (e) 好超导比率随Rb掺杂浓度的演化; (f) 图(a)与(c)中超导最均匀对应的掺杂浓度下的平均谱; (g) 超导能隙平均值与掺杂浓度的依赖关系

Fig. 9. Superconducting phase in 2 UC and 3 UC FeSe induced by Rb surface doping^[41]: (a), (b) The averaged dI/dV spectra in “good superconducting” and “bad superconducting group” of 2 UC FeSe at different doping concentrations; (c), (d) the averaged dI/dV spectra in “good superconducting” and “bad superconducting group” of 3 UC FeSe at different doping concentrations; (e) the evolution of good superconducting ratio at different doping concentrations; (f) the averaged dI/dV spectra extracted from (a) and (c) at the doping concentrations with optimal homogeneity; (g) dependence of the averaged superconducting gap size on doping concentration.

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图 10 FeSe/STO随温度、层厚、电子掺杂变化的相图^[41], 其中超导转变温度来自ARPES数据^{[10,11,104,105]}

Fig. 10. Phase diagram of FeSe/STO as a function of temperature, thickness and doping^[41]. The superconducting transition temperature is derived from ARPES data^{[10,11,104,105]}

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图 11 条纹态与能带的比较^[41]　(a) 条纹态对应的傅里叶变换; (b)—(f) M点附近能带随层厚的演化, 能带结构取自ARPES数据

Fig. 11. Comparison between stripes and band structure^[41]: (a) The Fourier transformation result of stripes. (b)–(f) Band structures near M point with different film thickness. The band structures are extracted from ARPES data.

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