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基于经验基EEHEMT等效电路模型, 针对AlGaN/GaN HEMTs提出一种可缩放大信号模型, 以准确获取宽栅多指器件的电学性能. 所提出的模型从器件的栅宽、栅指个数角度出发, 分别对器件模型的本征参数漏源电流、栅源电容和栅漏电容制定了相应的缩放规则. 为了验证所提缩放大信号模型的准确性, 通过总栅宽为14.4 mm的L频段GaN高效率功率放大器进行比对验证, 仿真与测试结果在1120—1340 MHz频带内功率值不低于46.5 dBm, 漏极效率值不低于70%, 结果高度吻合. 此外, 利用该模型在对大栅宽GaN HEMTs基波信息进行准确仿真的基础上能很好预测器件的高次谐波信息, 可为先进大功率、高效率的微波功率放大器的设计提供重要支撑.
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关键词:
- AlGaN/GaN HEMTs /
- 高电子迁移率晶体管 /
- 大信号缩放模型 /
- 高功率放大器
With the rapid development of wireless communications, GaN HEMT, which has various advantages of high power density, high electron mobility, and high breakdown threshold, receiving increasing attention. Microwave power amplifiers based on GaN HEMTs are widely used in many fields, such as communication, medical, and detection instruments. In the accurate design of GaN microwave power amplifiers, reliable RF large signal model is vitally important. In this paper, a scalable large-signal model based on EEHEMT model is proposed to describe the properties of multifinger AlGaN/GaN high electron mobility transistor (HEMT) accurately. A series of scaling rules is established for the intrinsic parameters of the device, including drain-source current Ids, input capacitance Cgs and Cgd, which take into account both the gate width of a single finger and the number of gate fingers. With the proposed scalable large-signal model, the performance of the L-band GaN high-efficiency power amplifier with a gate length of 14.4 mm is analyzed. This amplifier demonstrates outstanding performance, with the output power reaching to 46.5 dBm and the drain efficiency arriving at over 70% of the frequency range from 1120 MHz to 1340 MHz. Good agreement between the simulations and experiments is achieved, demonstrating the excellent accuracy of the proposed model. Moreover, the proposed model can further predict the performance of high-order harmonics, providing an effective tool for designing advanced high-power and high-efficiency microwave power amplifiers. Certainly, the EEHEMT model fails to characterize the dynamical behavior induced by trapping and self-heating effects. Thus, for further consideration, scaling models for the thermal resistance and heat capacity need further investigating to broaden the application scope of the proposed model in the case of continuous waves.-
Keywords:
- AlGaN/GaN HEMTs /
- high electron mobility transistors /
- scalable large-signal model /
- high power amplifier
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图 4 I-V/S参数在片测量系统实物图
Fig. 4. Photograph of the devices used to measure I-V/S parameters on wafer.
图 5 不同尺寸AlGaN/GaN HEMTs实物图
Fig. 5. Photographs of the different sizes AlGaN/GaN HEMTs.
图 6 参数Gmmax和ΔGm缩放与实测对比
Fig. 6. Comparison between modeled and measured results of parameters Gmmax and ΔGm
图 7 仿真和实测的非归一化gm对比
Fig. 7. Comparison between model simulated and measured results of non-normalized gm
图 8 输入电容阈值、栅漏传导电容缩放与实测对比
Fig. 8. Comparison between modeled and measured results of input capacitance threshold and gate-drain conduction capacitance.
图 10 输入、输出匹配电路回波损耗与插入损耗
Fig. 10. Return loss and insertion loss of input and output matching circuit.
图 11 仿真和实测的频率扫描结果对比
Fig. 11. Comparison between simulated and measured results in frequency sweep.
图 12 仿真和实测的功率扫描结果对比
Fig. 12. Comparison between simulated and measured results in power sweep.
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[1] Mishra U K, Shen L, Kazior T E, Wu Y F 2008 P. IEEE 96 287
Google Scholar
[2] Pengelly R S, Wood S M, Milligan J W, Sheppard S T, Pribble W L 2012 IEEE T. Microw. Theory 60 1764
Google Scholar
[3] Komiak J J 2015 IEEE Microw. Mag. 16 97
[4] Raffo A, Bosi G, Vadalà V, Vannini G 2013 IEEE T. Microw. Theory 62 73
[5] Ayari L, Xiong A, Maziere C, Ouardirhi Z, Gasseling T 2018 91st ARFTG Microwave Measurement Conference Philadelphia, PA, USA, June 15, 2018 p1
[6] Wang C S, Xu Y H, Yu X M, Ren C J, Wang Z S, Lu H Y, Chen T S, Zhang B, Xu R M 2014 IEEE T. Microw. Theory 62 2878
Google Scholar
[7] Angelov I, Thorsell M, Kuylenstierna D, Avolio G, Schreurs D, Raffo A, Vannini G 2013 European Microwave Conference Nuremberg, Germany, October 6–10, 2013 p267
[8] Vitanov S, Palankovski V, Maroldt S 2012 IEEE T. Electron Dev. 59 685
Google Scholar
[9] Radhakrishna U, Imada T, Palacios T, Antoniadis D 2014 Phys. Status Solidi 11 848
Google Scholar
[10] Wen Z, Xu Y H, Wang C S, Zhao X D, Chen Z K, Xu R M 2017 International J. Numer. Model. El. 30 2137
Google Scholar
[11] 徐跃杭, 徐锐敏, 李言荣 2017 微波氮化镓功率器件等效电路建模理论与技术 (北京: 科学出版社) 第75页
Xu Y H, Xu R M, Li Y R 2017 Theory and Technology of Equivalent Circuit Modeling for Microwave Gallium Nitride Power Devices (Beijing: Science Press) p75 (in Chinese)
[12] Jarndal A, Kompa G 2007 IEEE T. Electron Dev. 54 2830
Google Scholar
[13] Resca D, Santarelli A, Raffo A, Cignani R, Vannini G, Filicori F, Schreurs D M P 2008 IEEE T. Microw. Theory 56 755
Google Scholar
[14] Resca D, Raffo A, Santarelli A, Vannini G, Filicori F 2009 IEEE T. Microw. Theory 57 245
Google Scholar
[15] Khurgin J, Ding Y J, Jena D 2007 Appl. Phys. Lett. 91 252104
Google Scholar
[16] Xu Y H, Fu W L, Wang C S, Ren C J, Lu H Y, Zheng W B, Yu X M, Yan B, Xu R M 2014 J. Electromagnet. Wave. 28 1888
Google Scholar
[17] Xu Y H, Wang C S, Sun H, Wen Z, Wu Y Q, Xu R M, Yu X M, Ren C J, Wang Z S, Zhang B, Chen T S, Gao T 2017 IEEE T. Microw. Theory 65 2836
Google Scholar
[18] Alexander A, Leckey J 2015 IEEE MTT-S International Microwave Symposium, Phoenix AZ, USA, May 12–22, 2015 p1
[19] Crupi G, Schreurs D 2013 Microwave De-embedding: From Theory to Applications (Amsterdam: Academic Press) pp25–26
[20] 高建军 2007 场效应晶体管射频微波建模技术 (北京: 电子工业出版) 第75—109页
Gao J J 2007 RF Microwave Modeling Technology for Field Effect Transistors (Beijing: Electronic Industry Publishing) pp75–109 (in Chinese)
[21] Lee J W, Lee S, Webb K J 2001 IEEE MTT-S International Microwave Sympsoium Digest Phoenix, AZ, USA, May 20–25, 2001 p679
[22] Curtice W R 1980 IEEE T. Microw. Theory 28 448
Google Scholar
[23] 刘乃漳, 张雪冰, 姚若河 2021 物理学报 70 217301
Google Scholar
Liu N Z, Zhang X B, Yao R H 2021 Acta. Phys. Sin 70 217301
Google Scholar
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