With decreasing size of high-performance electronic devices (down to nanoscale), and the accompanying problem of heat dissipation becomes a big issue owing to its extremely high heat generation density. To tackle the ever-demanding heat dissipation requirement, intensive work has being carried out to develop techniques for chip-level cooling. Among the techniques reported in open literatures, liquid cooling appears to be a good candidate for cooling high-performance electronic devices. However, the solid-liquid interfacial thermal resistance cannot be ignored in the heat transfer process as the device size shrinks to the sub-microscale or nanoscale. Usually, the interfacial thermal transport can be enhanced by using nanostructures on the solid surface because of the confinement effect of the fluid molecules filling up the nano-grooves and the increase of the solid-liquid interfacial contact area. However, in the case of weak interfacial couplings, the fluid molecules cannot get into the nano-grooves and the interfacial thermal transport is suppressed. In the present paper, the heat transfer system between two parallel metal plates filled with deionized water is investigated by molecular dynamics simulation. Electronic charges are inflicted in the upper and lower plates to generate a uniform electric field which is perpendicular to the surface, and three types of nanostructures with varying size are constructed to the lower plate. It is found that the wetting state at the solid-liquid interface changes from Cassie to Wenzel states with increasing strength of the electric field. Owing to the transition from the dewetting to wetting state (from Wenzel to Cassie wetting state), the Kapitza length can be degraded and the solid-liquid interfacial heat transfer can be enhanced. The mechanism of the enhanced hart transfer is discussed based on the calculation of the number density distribution of the water molecules in between the two plates. As the charge is further increased, electrofreezing appears, and a solid hydrogen bonding network is formed in the system, resulting in an increase in thermal conductivity to 1.2 W/(m·K) while the thermal conductivity remains almost constant as the electric charge continues to increase.