-
基于多单元结构模型, 对集成门极换流晶闸管(IGCT)在过应力条件下的关断特性进行了仿真. 发现在开关自箝位模式(SSCM)下, 虽然器件的端电压被箝位, 但其内部产生了移动速度非常缓慢的电流丝, 从而使得器件非常容易发生重触发、甚至热击穿. 并且, IGCT静态雪崩击穿特性决定了器件在SSCM下电流丝的性质. IGCT寄生pnp晶体管的共基极电流增益αpnp越大, SSCM下雪崩诱发电流丝的强度越大, 移动速度越慢, 从而大大降低器件的鲁棒性.
-
关键词:
- 集成门极换流晶闸管(IGCT) /
- 开关自箝位 /
- 雪崩 /
- 电流丝 /
- 鲁棒性
As a thyristor-like device, integrated gate commutated thyristor (IGCT) is more applicable to the high-voltage and high-power fields due to the lower on-state voltage drop, and a combination of transparent anode and hard drive enables IGCT to turn off faster and more reliably. However, with an increase in power capacity of IGCT, the reliability of IGCT is becoming an increasing concern. Based on the multi-cell structure model, the turn-off characteristics and robustness of IGCT under over-stress conditions are studied in this work. The results show that during GCT turning off, the modulation of free carriers to the electric field in the space charge region makes the dynamic avalanche effect occur at the anode-cathode voltage much lower than the rated blocking voltage of the device, and the avalanche-induced current filament effect may occur due to the distortion of electric field, resulting in negative differential resistance effect at strong dynamic avalanche. In comparison, the behavioral characteristics of current filament at different stages of turn-off behave differently. During the voltage rising period when IGCT turns off, the avalanche-induced current filament can move rapidly, which will not cause the temperature to rise too much and has little influence on the robustness of the device. In contrast, when the anode-cathode voltage rises close to the static avalanche breakdown voltage, the switching self-clamping mode (SSCM) will occur, and the device will operate in its static avalanche breakdown mode. If the device operates on the negative differential resistance (NDR) branch of its static avalanche breakdown characteristic curve, a very slow moving current filament driven only by temperature rise will appear. This makes the power consumption that is required to be borne by the entire device undertaken only by the area where the current filament is located, thus resulting in a very high local current density and a large local temperature rise, and the device is easy to re-trigger or thermally break down. The static avalanche breakdown characteristics of IGCT determine the nature of the current filament under SSCM. The larger the common-base current gain αpnp of the parasitic pnp transistor of IGCT, the stronger the avalanche-induced current filament under SSCM is and the slower its movement speed, thereby significantly reducing the robustness of the device. Therefore, in order to improve the robustness of the device under SSCM, more precise control of αpnp is required during the designing of GCT chips. -
Keywords:
- integrated gate commutated thyristor (IGCT) /
- switching self-clamping /
- avalanche /
- current filament /
- robustness.
-
图 1 IGCT组件、管芯与结构剖面示意图 (a) IGCT组件; (b) 直径为91 mm的GCT管芯; (c) GCT单元的结构剖面示意图
Fig. 1. IGCT module and chip: (a) IGCT module; (b) GCT chip with a diameter of 91 mm; (c) structural profile diagram of GCT unit.
图 3 4.5 kV IGCT过应力关断测试中的SSCM现象(VDC = 2900 V, IT = 5600 A, Lσ = 1 µH, 初始温度T = 300 K)
Fig. 3. The occurrence of SSCM during the test of 4.5 kV IGCT turn-off. (VDC = 2900 V, IT = 5600 A, Lσ = 1 µH, T = 300 K at the initial stage)
图 5 不同阳极区掺杂下IGCT过应力下的关断特性曲线(VDC = 2900 V, IT = 5600 A, Lσ = 1 µH, T = 300 K)
Fig. 5. Turn-off curves of IGCT with different doping concentrations of anode region at over-stress (VDC = 2900 V, IT = 5600 A, Lσ = 1 µH, T = 300 K).
图 6 IGCT不同阳极区掺杂浓度下的关断特性及各个单元电流的抽取 (a) NA1; (b) NA2; (c) NA3; (d) NA4
Fig. 6. Turn-off characteristics of IGCT at different anode doping concentrations and current extraction of each cell: (a) NA1; (b) NA2; (c) NA3; (d) NA4.
图 8 阳极区掺杂为NA1时IGCT关断特性的电热耦合仿真结果(VDC = 2900 V, IT = 5600 A, Lσ = 1 µH, 初始T = 300 K)
Fig. 8. Electrothermal simulation results of IGCT turn-off characteristics at the NA1 of the anode region doping (VDC = 2900 V, IT = 5600 A, Lσ = 1 µH, T = 300 K at the initial stage).
图 10 IGCT过应力关断过程中电压上升阶段(t = 501, 502 µs)与电压箝位期间(t = 505, 508 µs)器件内部的空穴浓度p与电场强度E纵向分布曲线(对应图6(d))
Fig. 10. Vertical distribution curves of hole concentration p and electric field intensity E inside the device during the voltage rise stage (t = 501, 502 µs) and voltage clamp period (t = 505, 508 µs) during the IGCT over-stress turn-off (Corresponding to Figure 6(d)).
图 11 不同阳极区掺杂浓度下, IGCT在常温(300 K)与高温(400 K)下的雪崩击穿特性曲线
Fig. 11. The avalanche breakdown curves of 4.5 kV AS-GCT with different anode doping at high and room temperature.
图 12 IGCT在雪崩击穿模式下, 器件的αpnp与雪崩产生电流密度JA的关系曲线
Fig. 12. The relationship curves of αpnp and JA under the avalanche breakdown of IGCT.
表 1 4.5 kV非对称GCT的主要结构参数
Table 1. Main structural parameters of 4.5 kV asymmetry GCT.
掺杂(峰值)
浓度/cm–3厚度/宽度/μm n-基区 1×1013 厚度: 370 n场阻止层 2×1016 厚度: 47 p+透明阳极区 1×1017—5×1018 厚度: 3 浅p基区 5×1016 p基区整体厚度: 110 深p基区 — n+阴极区 1×1020 厚度/宽度: 20/200 单元宽度(阴极条宽度) — 400 
下载: 导出CSV
-
[1] Stiasny T, Quittard O, Waltisberg C, Meier U 2018 Microelectron. Reliab. 88 510
[2] Kang Z, Tang Y, Zhan C, Wang W, Zhu L, Sun H, Ji S 2024 CPSS & IEEE International Symposium on Energy Storage and Conversion Xi'an, China, November 8-11, 2024 p190
[3] Wu J, Pan J, Ren C, J Liu, Zhao B, Yu Z, Zeng R 2025 IEEE Trans. Power Electron. 40 5223
Google Scholar
[4] Wang J, Chen L, Zhang X, Liu J, Zhao B, Yu Z, Wu J, Zeng R 2025 IEEE Trans. Power Electron 40 5309
Google Scholar
[5] Lutz J, Schlangenotto H 2020 Semiconductor Power Devices: Physics, Characteristic, Reliability (Vol. 1) (Switzerland: Springer International Publishing AG) p108
[6] Rahimo M, Kopta A, Eicher S, Schlapbach, Linder 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Kitakyushu, Japan, May 24-27, 2004 p437
[7] Rahimo M, Kopta A, Eicher S, Schlapbach U, Linder S 2005 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Santa Barbara, CA, USA, May 23-26, 2005 p67
[8] Stiasny T, Streit P 2005 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Santa Barbara, CA, USA, May 23-26, 2005 p203
[9] Yang W H, Wang C L 2021 Microelectron. Reliab. 120 114111
Google Scholar
[10] Yang W H, Wang C L, Yang J 2019 Microelectron. Reliab. 92 34
Google Scholar
[11] Lutz J, Baburske R, Chen M, B Heinze, Domeij M, Felsl HP, Schulze HJ 2009 IEEE Trans. Electron Devices 56 2825
Google Scholar
[12] Schulze H J, Niedernostheide F J, Pfirsch F, Baburske R 2013 IEEE Trans. Electron Devices 60 551
Google Scholar
[13] Baburske R, Niedernostheide F J, Lutz J, Schulze HJ 2013 IEEE Trans. Electron Devices 60 2308
Google Scholar
[14] Lutz J, Baburske R 2012 Microelectron. Reliab. 52 475
Google Scholar
[15] Oetjen J, Jungblut R, Kuhlmann U, Arkenau J, Sittig R 2000 Solid State Electron. 44 117
Google Scholar
[16] Baburske R, Lutz J, Heinze B 2010 IEEE International Reliability Physics Symposium Proceedings Anaheim, CA, USA, 2010, p162
[17] 杨武华, 王彩琳, 张如亮, 张超, 苏乐 2023 物理学报 72 078501
Google Scholar
Yang W H, Wang C L, Zhang R L, Zhang C, Su L 2023 Acta Phys. Sin. 72 078501
Google Scholar
[18] Yang W H, Wang C L, Zhang R L, Su L, Zhang Q 2021 IEEE Trans. Electron Devices 68 208
Google Scholar
[19] Dong M L, Yang W H 2024 2024 3rd International Symposium on Semiconductor and Electronic Technology Xi'an, China, August 23-25, 2024 p315
[20] Yang W H, Wang C L, Yang J, Zhang Q, Su L 2021 Microelectron. Reliab. 118 114048
Google Scholar
下载:
计量
- 文章访问数: 289
- PDF下载量: 5
- 被引次数: 0
