| [1] |
Wang Yan-Feng, Zhang Xiao-Dan, Huang Qian, Liu Yang, Wei Chang-Chun, Zhao Ying. Room temperature deposition of highly conductive and transparent H and W co-doped ZnO film. Acta Physica Sinica,
2013, 62(1): 017803.
doi: 10.7498/aps.62.017803
|
| [2] |
Luo Xiao-Dong, Di Guo-Qing. Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering. Acta Physica Sinica,
2012, 61(20): 206803.
doi: 10.7498/aps.61.206803
|
| [3] |
Guo Feng-Xiang, Lü Ting, Jia Yan, Tian Xue-Lei. Calculation of electrical resistivity of liquid Pb. Acta Physica Sinica,
2011, 60(7): 077204.
doi: 10.7498/aps.60.077204
|
| [4] |
Tian Ling, Ding Yi, Chen Hao, Liu Jun-Kai, Deng Jin-Xiang, He De-Yan, Chen Guang-Hua. Preparation of cubic boron nitride films by radio frequency sputtering. Acta Physica Sinica,
2006, 55(10): 5441-5443.
doi: 10.7498/aps.55.5441
|
| [5] |
Lu Xiao, Wu Chuan-Gui, Zhang Wan-Li, Li Yan-Rong. Dielectric breakdown of BST thin films prepared by RF sputtering. Acta Physica Sinica,
2006, 55(5): 2513-2517.
doi: 10.7498/aps.55.2513
|
| [6] |
Wang Wen-Jing, Xiao Shu-Qin, Liu Yi-Hua, Chen Wei-Ping, Dai You-Yong, Jiang Shan, Yuan Hui-Min, Yan Shi-Shen. The influence of sputtering power on the giantmagneto-impedance of FeZrBCu film s. Acta Physica Sinica,
2005, 54(4): 1821-1825.
doi: 10.7498/aps.54.1821
|
| [7] |
Wang Yuan, Xu Ke-Wei. Cu-W Thin film characterized by surface fractal and resistivity. Acta Physica Sinica,
2004, 53(3): 900-904.
doi: 10.7498/aps.53.900
|
| [8] |
Lin Hong-Feng, Xie Er-Qing, Ma Zi-Wei, Zhang Jun, Peng Ai-Hua, He De-Yan. Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method. Acta Physica Sinica,
2004, 53(8): 2780-2785.
doi: 10.7498/aps.53.2780
|
| [9] |
Zheng Dai-Shun, Xie Tian, Bai Jian-Min, Wei Fu-Lin, Yang Zheng. . Acta Physica Sinica,
2002, 51(4): 908-912.
doi: 10.7498/aps.51.908
|
| [10] |
FENG BO-XUE, XIE LIANG, WANG JUN, JIANG SHENG-RUI, CHEN GUANG-HUA. STUDY ON ELECTROCHROMIC PERFORMANCES AND MECHANISM OF MICROCRYSTAL NiOxHy THIN FILMS FABRICATED BY R.F.DEPOSITION. Acta Physica Sinica,
2000, 49(10): 2066-2071.
doi: 10.7498/aps.49.2066
|
| [11] |
Wang Xiao-Peng, Zhao Te-Xiu, Ji Hang, Liang Qi, Ye Jian, Liu Ci-Hui, Wang Shun-Xi. . Acta Physica Sinica,
1995, 44(2): 305-311.
doi: 10.7498/aps.44.305
|
| [12] |
Zheng De-Heng, D.E.Brode. . Acta Physica Sinica,
1995, 44(8): 1321-1327.
doi: 10.7498/aps.44.1321
|
| [13] |
WANG XIAO-PING, ZHAO TE-XIU, JI HANG, LIANG QI, DONG YI. EFFECT OF GRAIN SIZE ON TEMPERATURE COEFFICIENT OF RESISTIVITY OF Pd THIN FILMS. Acta Physica Sinica,
1994, 43(2): 297-302.
doi: 10.7498/aps.43.297
|
| [14] |
WANG XIAO-PING, ZHAO TE-XIU, LIU HONG-TU, SHI YI-SHENG, WENG HUI-MIN, GUO XUE-ZHE. ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING. Acta Physica Sinica,
1994, 43(5): 823-828.
doi: 10.7498/aps.43.823
|
| [15] |
WANG XIAO-PING, ZHAO TE-XUE, JI HANG, DONG YI, BIAN BO. STUDY ON GRAIN GROWTH KINETICS OF THIN FILMS BY MEANS OF QUASI-STATE MEASUREMENT OF RESISTIVITY. Acta Physica Sinica,
1993, 42(10): 1642-1647.
doi: 10.7498/aps.42.1642
|
| [16] |
JI HANG, ZHAO TE-XIU, WANG XIAO-PING, DONG YI. AN IN-SITU STUDY OF ELECTRICAL RESISTIVITY OF MAGNETRON SPUTTERING Mo FILM. Acta Physica Sinica,
1993, 42(8): 1340-1345.
doi: 10.7498/aps.42.1340
|
| [17] |
FEI QING-YU, HUANG BING-ZHONG. THE TOTAL VOLUME FRACTION OF VOIDS OF RF SPUTTERED AMORPHOUS SILICON. Acta Physica Sinica,
1985, 34(11): 1413-1421.
doi: 10.7498/aps.34.1413
|
| [18] |
CAO ZHONG-SHENG, ZHAO ZHONG-XIAN, FENG BEN-ZHENG. RESISTIVITY OF METALLIC GLASS CuTi. Acta Physica Sinica,
1985, 34(5): 652-662.
doi: 10.7498/aps.34.652
|
| [19] |
LEI XIAO-LIN. ELECTRICAL RESISTIVITY OF SUBSTITUTIONAL ALLOYS. Acta Physica Sinica,
1980, 29(11): 1395-1404.
doi: 10.7498/aps.29.1395
|
| [20] |
LEI XIAO-LIN. ELECTRICAL RESISTIVITY OF DISORDERED CRYSTALLINE ALLOYS. Acta Physica Sinica,
1980, 29(11): 1385-1394.
doi: 10.7498/aps.29.1385
|
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