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同济大学玻尔固体物理研究所,上海200092
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[1] Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201. doi: 10.7498/aps.69.20190640 [2] Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903. doi: 10.7498/aps.66.067903 [3] Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402. doi: 10.7498/aps.65.038402 [4] Hou Zhen-Tao, Li Yan-Ru, Liu He-Yan, Dai Xue-Fang, Liu Guo-Dong, Liu Cai-Chi, Li Ying. Effect of Ga vacancy on the magnetism in GaN:Gd: First-principles calculation. Acta Physica Sinica, 2016, 65(12): 127102. doi: 10.7498/aps.65.127102 [5] Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi. Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806. doi: 10.7498/aps.63.217806 [6] Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong. Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica, 2013, 62(1): 017103. doi: 10.7498/aps.62.017103 [7] Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan. Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107901. doi: 10.7498/aps.60.107901 [8] Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901. doi: 10.7498/aps.60.127901 [9] Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui. Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica, 2009, 58(11): 7952-7957. doi: 10.7498/aps.58.7952 [10] Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin. Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica, 2009, 58(8): 5847-5851. doi: 10.7498/aps.58.5847 [11] Zhou Mei, Chang Qing-Ying, Zhao De-Gang. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica, 2008, 57(4): 2548-2553. doi: 10.7498/aps.57.2548 [12] Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574. doi: 10.7498/aps.57.4570 [13] Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007. doi: 10.7498/aps.56.6003 [14] Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517. doi: 10.7498/aps.56.5513 [15] Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica, 2006, 55(6): 2977-2981. doi: 10.7498/aps.55.2977 [16] Sun Xiao-Wei, Chu Yan-Dong, Liu Zi-Jiang, Liu Yu-Xiao, Wang Cheng-Wei, Liu Wei-Min. Molecular dynamics study on the structural and thermodynamic properties of the zinc-blende phase of GaN at high pressures and high temperatures. Acta Physica Sinica, 2005, 54(12): 5830-5836. doi: 10.7498/aps.54.5830 [17] Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua. A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278. doi: 10.7498/aps.54.4273 [18] Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin. Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176. doi: 10.7498/aps.53.1171 [19] Hao Jing-An, Zheng Hao-Ping. Theoretical calculation of structures and properties of Ga6N6 cluster. Acta Physica Sinica, 2004, 53(4): 1044-1049. doi: 10.7498/aps.53.1044 [20] Shen Yao-Wen, Kang Jun-Yong. . Acta Physica Sinica, 2002, 51(3): 645-648. doi: 10.7498/aps.51.645
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- Abstract views: 7951
- PDF Downloads: 1426
- Cited By: 0
Publishing process
- Received Date:
22 July 2001
- Accepted Date:
10 April 2002
- Published Online:
21 June 2005
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