| [1] |
Guo Lin-Lin, Zhao Zi-Tong, Sui Ming-Hong, Wang Peng, Liu Bing-Bing. High-pressure high-temperature induced polymerization of nitrogen molecules under restricted condition. Acta Physica Sinica,
2024, 73(8): 086102.
doi: 10.7498/aps.73.20240173
|
| [2] |
Yang Ya-Fan, Wang Jian-Zhou, Shang Xiang-Yu, Wang Tao, Sun Shu-Yu. Molecular dynamics simulation of swelling properties of Ca-montmorillonite at high temperatures. Acta Physica Sinica,
2022, 71(4): 043102.
doi: 10.7498/aps.71.20211565
|
| [3] |
Sun Xiao-Wei, Song Ting, Liu Zi-Jiang, Wan Gui-Xin, Zhang Lei, Chang Wen-Li. Numerical prediction of structural stability and thermodynamic properties for MgF2 with fluorite- type structure under high pressure. Acta Physica Sinica,
2020, 69(15): 156202.
doi: 10.7498/aps.69.20200289
|
| [4] |
Fang Yu, Wu Xing-Zhi, Chen Yong-Qiang, Yang Jun-Yi, Song Ying-Lin. Study on two-photon induced ultrafast carrier dynamcis in Ge-doped GaN by transient absorption spectroscopy. Acta Physica Sinica,
2020, 69(16): 168701.
doi: 10.7498/aps.69.20200397
|
| [5] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
doi: 10.7498/aps.66.067903
|
| [6] |
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
doi: 10.7498/aps.62.117103
|
| [7] |
Lu Zhi-Wen, Zhong Zhi-Guo, Liu Ke-Tao, Song Hai-Zhen, Li Gen-Quan. First-principles calculations of microstructure and thermodynamic properties of the intermetallic compound in Ag-Mg-Zn alloy under high pressure and high temperature. Acta Physica Sinica,
2013, 62(1): 016106.
doi: 10.7498/aps.62.016106
|
| [8] |
Zhao Yan-Hong, Liu Hai-Feng, Zhang Qi-Li. Unlike-pair interactions of detonation products at high pressure and high temperature. Acta Physica Sinica,
2012, 61(23): 230509.
doi: 10.7498/aps.61.230509
|
| [9] |
Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun. Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica,
2012, 61(22): 227303.
doi: 10.7498/aps.61.227303
|
| [10] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica,
2011, 60(12): 127901.
doi: 10.7498/aps.60.127901
|
| [11] |
Zhao Yan-Hong, Liu Hai-Feng, Zhang Gong-Mu, Zhang Guang-Cai. Pair interactions of detonation products at high pressure and high temperature. Acta Physica Sinica,
2011, 60(12): 123401.
doi: 10.7498/aps.60.123401
|
| [12] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan. Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica,
2011, 60(10): 107901.
doi: 10.7498/aps.60.107901
|
| [13] |
Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
doi: 10.7498/aps.59.1258
|
| [14] |
Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin. Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica,
2009, 58(8): 5847-5851.
doi: 10.7498/aps.58.5847
|
| [15] |
Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
doi: 10.7498/aps.57.4570
|
| [16] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
doi: 10.7498/aps.55.1407
|
| [17] |
Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
doi: 10.7498/aps.55.2476
|
| [18] |
Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua. A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica,
2005, 54(9): 4273-4278.
doi: 10.7498/aps.54.4273
|
| [19] |
Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica,
2005, 54(11): 5450-5454.
doi: 10.7498/aps.54.5450
|
| [20] |
Guo Zeng-Bao. . Acta Physica Sinica,
2002, 51(10): 2344-2348.
doi: 10.7498/aps.51.2344
|
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