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Yan Shao-Qi, Gao Ji-Kun, Chen Yue, Ma Yao, Zhu Xiao-Dong. Low-density plasmas generated by electron beams passing through silicon nitride window. Acta Physica Sinica,
2024, 73(14): 144102.
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Yu Sen, Xu Sheng-Rui, Tao Hong-Chang, Wang Hai-Tao, An Xia, Yang He, Xu Kang, Zhang Jin-Cheng, Hao Yue. Ion implantation induced nucleation and epitaxial growth of high-quality AlN. Acta Physica Sinica,
2024, 73(19): 196101.
doi: 10.7498/aps.73.20240674
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Li Shu-Ping, Zhang Zhi-Li, Fu Kai, Yu Guo-Hao, Cai Yong, Zhang Bao-Shun. High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics. Acta Physica Sinica,
2017, 66(19): 197301.
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Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica,
2016, 65(8): 088501.
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Rao Xue, Wang Ru-Zhi, Cao Jue-Xian, Yan Hui. First-principles calculation of doped GaN/AlN superlattices. Acta Physica Sinica,
2015, 64(10): 107303.
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Feng Jia-Heng, Tang Li-Dan, Liu Bang-Wu, Xia Yang, Wang Bing. Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica,
2013, 62(11): 117302.
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Wu Liang-Liang, Zhao De-Gang, Li Liang, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng. Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition. Acta Physica Sinica,
2013, 62(8): 086102.
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Cao Lei, Liu Hong-Xia. Study on the self-heating effect in silicon-on-insulator devices with SOANN buried oxide. Acta Physica Sinica,
2012, 61(17): 177301.
doi: 10.7498/aps.61.177301
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica,
2011, 60(4): 047101.
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Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117304.
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Lu Wei, Xu Ming, Wei Yi, He Lin. Investigation on the band structures of AlN/InN and AlN/GaN superlattices. Acta Physica Sinica,
2011, 60(8): 087807.
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Yuan Di, Luo Hua-Feng, Huang Duo-Hui, Wang Fan-Hou. First-principles study of Zn,O codoped p-type AlN. Acta Physica Sinica,
2011, 60(7): 077101.
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Ding Guo-Jian, Guo Li-Wei, Xing Zhi-Gang, Chen Yao, Xu Pei-Qiang, Jia Hai-Qiang, Zhou Jun-Ming, Chen Hong. Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers. Acta Physica Sinica,
2010, 59(8): 5724-5729.
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Wang Lai, Wang Lei, Ren Fan, Zhao Wei, Wang Jia-Xing, Hu Jian-Nan, Zhang Chen, Hao Zhi-Biao, Luo Yi. GaN grown on AlN/sapphire templates. Acta Physica Sinica,
2010, 59(11): 8021-8025.
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Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng. Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs. Acta Physica Sinica,
2009, 58(7): 4925-4930.
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Lin Zhu, Guo Zhi-You, Bi Yan-Jun, Dong Yu-Cheng. Ferromagnetism and the optical properties of Cu-doped AlN from first-principles study. Acta Physica Sinica,
2009, 58(3): 1917-1923.
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Liang Shuang, Lü Yan-Wu. The calculation of electronic structure in GaN/AlN quantum dots with finite element method. Acta Physica Sinica,
2007, 56(3): 1617-1620.
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Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming. The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica,
2007, 56(10): 6013-6018.
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Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng. Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica,
2003, 52(3): 687-691.
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DU XIAO-LONG, CHEN GUANG-CHAO, JIANG DE-YI, YAO XIN-ZI, ZHU HE-SUN. PROPERTIES OF ELECTRON CYCLOTRON RESONANCE PLASMAS AND THEIR INFLUENCE ON THE DEPOSITION OF GaN FILMS. Acta Physica Sinica,
1999, 48(2): 257-266.
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