| [1] |
Ma Ping, Han Yi-Ping, Zhang Ning, Tian De-Yang, Shi An-Hua, Song Qiang. Experimental investigation on all-target electromagnetic scattering characteristics of hypervelocity HTV2-like flight model. Acta Physica Sinica,
2022, 71(8): 084101.
doi: 10.7498/aps.71.20211901
|
| [2] |
Liu Jia-Wen, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei. A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2021, 70(15): 157302.
doi: 10.7498/aps.70.20202156
|
| [3] |
Liu Chang-Shi. A reliable and accurate model of photoelectron yield spectrum and its applications. Acta Physica Sinica,
2021, 70(10): 103301.
doi: 10.7498/aps.70.20201729
|
| [4] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2021, 70(21): 217301.
doi: 10.7498/aps.70.20210700
|
| [5] |
Xie Tian-Ci, Zhang Bin, He Bo, Li Hao-Peng, Qin Zhuang, Qian Jin-Qian, Shi Qie-Ming, Lewis Elfed, Sun Wei-Min. Mathematical algorithm model of absolute dose in radiotherapy. Acta Physica Sinica,
2021, 70(1): 018701.
doi: 10.7498/aps.70.20200986
|
| [6] |
Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica,
2020, 69(7): 077302.
doi: 10.7498/aps.69.20191931
|
| [7] |
Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica,
2016, 65(1): 018501.
doi: 10.7498/aps.65.018501
|
| [8] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
doi: 10.7498/aps.61.047301
|
| [9] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2011, 60(1): 017202.
doi: 10.7498/aps.60.017202
|
| [10] |
Jiang Zhi-Hong, Wang Hui, Gao Chao. A evolving network model generated by random walk and policy attachment. Acta Physica Sinica,
2011, 60(5): 058903.
doi: 10.7498/aps.60.058903
|
| [11] |
Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong. An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica,
2011, 60(9): 097302.
doi: 10.7498/aps.60.097302
|
| [12] |
Li Qi, Zhang Bo, Li Zhao-Ji. A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica,
2008, 57(3): 1891-1896.
doi: 10.7498/aps.57.1891
|
| [13] |
Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
doi: 10.7498/aps.56.3504
|
| [14] |
Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica,
2006, 55(7): 3622-3628.
doi: 10.7498/aps.55.3622
|
| [15] |
Shen Zi-Cai, Shao Jian-Da, Wang Ying-Jian, Fan Zheng-Xiu. Modeling analysis of gradient-index coatings prepared by reactive magnetron sputtering. Acta Physica Sinica,
2005, 54(10): 4842-4845.
doi: 10.7498/aps.54.4842
|
| [16] |
Shen Jian, Liu Shou-Hua, Shen Zi-Cai, Kong Wei-Jin, Huang Jian-Bing, Shao Jian-Da, Fan Zheng-Xiu. Theoretical study of influence of substrate microdefects on optical properties of dielectric thin films. Acta Physica Sinica,
2005, 54(10): 4920-4925.
doi: 10.7498/aps.54.4920
|
| [17] |
Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica,
2003, 52(8): 2046-2051.
doi: 10.7498/aps.52.2046
|
| [18] |
Wang Pei-Lin, Ding Tian-Hua, Cai Xun. . Acta Physica Sinica,
2002, 51(9): 2109-2112.
doi: 10.7498/aps.51.2109
|
| [19] |
WANG YONG-JIU, TANG ZHI-MING. THE STABILITY OF A KIND OF COSMOLOGICAL MODEL. Acta Physica Sinica,
2001, 50(10): 1829-1832.
doi: 10.7498/aps.50.1829
|
| [20] |
LIU HONG-XIA, FANG JIAN-PING, HAO YUE. EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(6): 1172-1177.
doi: 10.7498/aps.50.1172
|
下载:
