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The diffusion character of metal atoms in the interconnects of metal strips/solder bump was observed by series solder bumps on flip chip which were stressed by high density electric current under high temperature. Assumed that the diffusion of atoms was controlled by electrical stress and chemical potential gradient，the diffusion behavior of all metal atoms in interconnects was investigated. The Ni atoms in the Ni(V) finishes directionally diffuse along the electron flow and accelerate the interface reaction of Ni and Sn by electromigration. Thus the Ni(V) finishes lose the action of the diffusion barrier layer in turn that resulted in the direct connection of Al and the solder. The Al atoms migrate in the electron flow by the electron wind force induced the Al atoms content in solder near the passivation via increases with the stressed time. The vacancies move in the opposite direction with the Al atom flux，and collect in the Al strips. Then the voids appear after the supersaturation of vacancies. The Sn and Pb atoms in the solder diffuse along the concentration gradient because of the non-leading action of electromigration. The atoms in the solder driven by the chemical potential gradient and compression stress form the upward fluxes. The upward diffusion of solder erodes the Al strips，which made the Al strips failure due to the voids and corrosion. The Al and Sn/Pb atoms were driven by their respective dominant force，and result in durative mutual diffusion until the interconnects take place the open circuit because of the difference of mass flux.
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Keywords:
- flip chip /
- bump /
- electromigration /
- diffusion
[1] ［1］ Zaporozhets T V，Gusak A M，Tu K N，Mhaisalkar S G 2005 J. Appl. Phys. 98 1
[2] ［2］ He L，Du L，Zhuang Y Q，Chen C X，Wei T，Huang X J 2007 Acta Phys. Sin. 56 7176 (in Chinese) ［何亮、杜磊、庄奕琪、陈春霞、卫涛、黄小君 2007 物理学报 56 7176］
[3] ［3］ Zhang W J，Yi W B，Wu J 2006 Acta Phys. Sin. 55 5424 (in Chinese) ［张文杰、易万兵、吴瑾 2006 物理学报 55 524］
[4] ［4］ Tu K N 2003 J. Appl. Phys. 94 5451
[5] ［5］ Lu Y D，He X Q，En Y F，Wang X，Zhuang Z Q 2009 Acta Phys. Sin. 58 1942 (in Chinese) ［陆裕东、何小琦、恩云飞、王歆、庄志强 2009 物理学报 58 1942］
[6] ［6］ Nah J W，Chen K，Tu K N，Su B R，Chen C 2007 J. Mater. Res. 22 763
[7] ［7］ Ouyang F Y，Tu K N，Kao C L，Lai Y S 2007 Appl. Phys. Lett. 90 211914
[8] ［8］ Shao W，Mhaisalkar S G，Sritharan T，Vairagar A V，Engelmann H J，Aubel O，Zschech E，Gusak A M，Tu K N 2007 Appl. Phys.Lett. 90 052106
[9] ［9］ Lu Y D，He X Q，En Y F，Wang X，Zhuang Z Q 2009 Acta Mater. 57 2560
[10] ］ Gan Z，Gusak A M，Shao W，Chen Z，Mhaisalkar S G，Zaporozhets T，Tu K N 2007 J. Mater. Res. 22 152
[11] ］ Yang D，Wu B Y，Chan Y C，Tu K N 2007 J. Appl. Phys. 102 043502
[12] ］ Ouyang F Y，Chen K，Tu K N，Lai Y S 2007 Appl. Phys. Lett. 91 231919
[13] ］ Liang S W，Chang Y W，Shao T L，Chen C，Tu K N 2006 Appl. Phys. Lett. 89 022117
[14] ］ Lu Y D，He X Q，En Y F，Wang X，Zhuang Z Q 2009 Acta Metall. Sin. 45 178 (in Chinese) ［陆裕东、何小琦、恩云飞、王歆、庄志强 2009 金属学报 45 178］
[15] ］ Zhang L，Ou S，Huang J，Tu K N，Gee S，Nguyen L 2006 Appl. Phys. Lett. 88 012106
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[1] ［1］ Zaporozhets T V，Gusak A M，Tu K N，Mhaisalkar S G 2005 J. Appl. Phys. 98 1
[2] ［2］ He L，Du L，Zhuang Y Q，Chen C X，Wei T，Huang X J 2007 Acta Phys. Sin. 56 7176 (in Chinese) ［何亮、杜磊、庄奕琪、陈春霞、卫涛、黄小君 2007 物理学报 56 7176］
[3] ［3］ Zhang W J，Yi W B，Wu J 2006 Acta Phys. Sin. 55 5424 (in Chinese) ［张文杰、易万兵、吴瑾 2006 物理学报 55 524］
[4] ［4］ Tu K N 2003 J. Appl. Phys. 94 5451
[5] ［5］ Lu Y D，He X Q，En Y F，Wang X，Zhuang Z Q 2009 Acta Phys. Sin. 58 1942 (in Chinese) ［陆裕东、何小琦、恩云飞、王歆、庄志强 2009 物理学报 58 1942］
[6] ［6］ Nah J W，Chen K，Tu K N，Su B R，Chen C 2007 J. Mater. Res. 22 763
[7] ［7］ Ouyang F Y，Tu K N，Kao C L，Lai Y S 2007 Appl. Phys. Lett. 90 211914
[8] ［8］ Shao W，Mhaisalkar S G，Sritharan T，Vairagar A V，Engelmann H J，Aubel O，Zschech E，Gusak A M，Tu K N 2007 Appl. Phys.Lett. 90 052106
[9] ［9］ Lu Y D，He X Q，En Y F，Wang X，Zhuang Z Q 2009 Acta Mater. 57 2560
[10] ］ Gan Z，Gusak A M，Shao W，Chen Z，Mhaisalkar S G，Zaporozhets T，Tu K N 2007 J. Mater. Res. 22 152
[11] ］ Yang D，Wu B Y，Chan Y C，Tu K N 2007 J. Appl. Phys. 102 043502
[12] ］ Ouyang F Y，Chen K，Tu K N，Lai Y S 2007 Appl. Phys. Lett. 91 231919
[13] ］ Liang S W，Chang Y W，Shao T L，Chen C，Tu K N 2006 Appl. Phys. Lett. 89 022117
[14] ］ Lu Y D，He X Q，En Y F，Wang X，Zhuang Z Q 2009 Acta Metall. Sin. 45 178 (in Chinese) ［陆裕东、何小琦、恩云飞、王歆、庄志强 2009 金属学报 45 178］
[15] ］ Zhang L，Ou S，Huang J，Tu K N，Gee S，Nguyen L 2006 Appl. Phys. Lett. 88 012106
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