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The tetrahedral amorphous carbon (ta-C) films with more than 80% sp3 in fraction are deposited by the filtered cathode vacuum arc technique. Then the energetic nitrogen (N) ions are used to bombard the ta-C films to fabricate nitrogenated tetrahedral amorphous carbon (ta-C:N) films. The composition and the structure of the films are analyzed by visible Raman spectrum and X-ray photoelectron spectroscopy. The result shows that the bombardment of energetic nitrogen ions can form CN bonds, convert CC bonds into C＝C bonds, and increase the size of sp2 cluster. The CN bonds are composed of C＝N bonds and CN bonds. The content of C＝N bonds increases with the N ion bombardment energy increasing, but the content of CN bonds is inversely proportional to the increase of nitrogen ion energy. In addition, CN bonds do not exist in the films.
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Keywords:
- nitrogenated tetrahedral amorphous carbon /
- nitrogen ion /
- visible Raman spectrum /
- X-ray photoelectron spectroscopy
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[2] Zhu J Q, Wang J H, Meng S H, Han J C, Zhang L S 2004 Acta Phys. Sin. 53 1151 (in Chinese) [朱嘉琦, 王景贺, 孟松鹤, 韩杰才, 张连升 2004 物理学报 53 1151]
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[5] Gao W, Gong S L, Zhu J Q, Ma G J 2011 Acta Phys. Sin. 60 027104 (in Chinese) [高巍, 巩水利, 朱嘉琦, 马国佳 2011 物理学报 60 027104]
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[8] Panwar O S, Deb B, Satyanarayana B S, Khan M A, Bhattacharyya R, Pal A K 2005 Thin Solid Films 472 180
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[13] Wixom M K 1990 J. Am. Ceram. Soc. 73 1973
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[15] Colthup N B, Daly L H, Wiberly S E 1990 Introduction to Infrared and Raman Spectroscopy (3rd Ed.) (New York: Academic Press)
[16] Chowdhury A K M S, Cameron D C, Hashmi M S J 1998 Thin Solid Films 332 62
[17] Kaufman J H, Metin S, Saperstein D D 1989 Phys. Rev. B 39 13053
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[19] Ripalda J M, Roman E, Galan L 2003 J. Chem. Phys. 118 3748
[20] Yu G H, Zeng L R, Zhu F W, Chai C L, Lai W Y 2001 J. Appl. Phys. 90 4039
[21] Zhu J Q, Han J C, Han X, Schiaberginaki H, Wang J Z 2008 J. Appl. Phys. 104 013512
[22] Das D, Chen K H, Chattopadhyay S, Chattopadhyay S Chen L C 2002 J. Appl. Phys. 91 4944
[23] Papakonstantinou P, Lemoine P 2001 J. Phys. Condens. Matter 13 2971
[24] Ronning C, Feldermann H, Merk R, Hofsäss H 1998 Phys. Rev. B 58 2207
[25] Hellgren N, Guo J, Sathe C, Agui A, Nordgren J, Luo Y, \AAgren H, Sundgren J E 2001 Appl. Phys. Lett. 79 4348
[26] Hofsäss H, Eldermann H F, Merk R, Sebastian M, Ronning C 1998 J. Appl. Phys. A 66 153
[27] Majumdar A, Schäfer J, Mishra P, Ghose D, Meichsner J, Hippler R 2007 Surf. Coat. Technol. 201 6437
[28] McCann R, Roy S S, Papakonstantinou P, Bain M F, Gamble H S, McLaughlin J A 2005 Thin Solid Films 482 34
[29] Bhattacharyya S, Hong J, Turban G 1998 J. Appl. Phys. 83 3922
[30] Kaukonen M, Nieminen R M, Poykko S, Seitsonen A P 1999 Phys. Rev. Lett. 83 5346
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[1] Ander A, Ander S, Brown I G 1995 Plasma Source Sci. Technol. 4 1
[2] Zhu J Q, Wang J H, Meng S H, Han J C, Zhang L S 2004 Acta Phys. Sin. 53 1151 (in Chinese) [朱嘉琦, 王景贺, 孟松鹤, 韩杰才, 张连升 2004 物理学报 53 1151]
[3] Liang F, Yan X J 1999 Acta Phys. Sin. 48 1095 (in Chinese) [梁风, 严学俭 1999 物理学报 48 1095]
[4] Satyanarayana B S, Hart A, Miline W I, Robertson J 1998 Diamond Relat. Mater. 7 656
[5] Gao W, Gong S L, Zhu J Q, Ma G J 2011 Acta Phys. Sin. 60 027104 (in Chinese) [高巍, 巩水利, 朱嘉琦, 马国佳 2011 物理学报 60 027104]
[6] Panwar O S, Khan M A, Satyanarayana B S, Bhattacharyya R, Mehta B R, Kumar S, Ishpal I 2010 J. Vac. Sci. Technol. B 28 411
[7] Panwar O S, Alim M K, Kumar M, Shivaprasad S M, Satyanarayana B S, Dixit P N, Bhattacharyya R, Khan M Y 2008 Thin Solid Films 516 2331
[8] Panwar O S, Deb B, Satyanarayana B S, Khan M A, Bhattacharyya R, Pal A K 2005 Thin Solid Films 472 180
[9] Polo M C, Andujar J L, Hart A, Robertson J, Milne W I 2000 Diamond Relat. Mater. 9 663
[10] Panwar O S, Alim K M, Kumar S, Basu A, Mehta B R, Kumar S, Ishpal I 2010 Surf. Coat. Technol. 205 2126
[11] Prawer S, Nugent K W, Lifshitz Y 1996 Diamond Relat. Mater. 5 433
[12] Zhang X W, Ke N, Cheung W Y 2003 Diamond Relat. Mater. 12 1
[13] Wixom M K 1990 J. Am. Ceram. Soc. 73 1973
[14] Cheng Y H, Tay B K, Lau S P 2001 Diamond Relat. Mater. 10 2137
[15] Colthup N B, Daly L H, Wiberly S E 1990 Introduction to Infrared and Raman Spectroscopy (3rd Ed.) (New York: Academic Press)
[16] Chowdhury A K M S, Cameron D C, Hashmi M S J 1998 Thin Solid Films 332 62
[17] Kaufman J H, Metin S, Saperstein D D 1989 Phys. Rev. B 39 13053
[18] Merel P, Tabbal M, Chaker M, Moisa S, Margot 1998 J. Appl. Surf. Sci. 136 105
[19] Ripalda J M, Roman E, Galan L 2003 J. Chem. Phys. 118 3748
[20] Yu G H, Zeng L R, Zhu F W, Chai C L, Lai W Y 2001 J. Appl. Phys. 90 4039
[21] Zhu J Q, Han J C, Han X, Schiaberginaki H, Wang J Z 2008 J. Appl. Phys. 104 013512
[22] Das D, Chen K H, Chattopadhyay S, Chattopadhyay S Chen L C 2002 J. Appl. Phys. 91 4944
[23] Papakonstantinou P, Lemoine P 2001 J. Phys. Condens. Matter 13 2971
[24] Ronning C, Feldermann H, Merk R, Hofsäss H 1998 Phys. Rev. B 58 2207
[25] Hellgren N, Guo J, Sathe C, Agui A, Nordgren J, Luo Y, \AAgren H, Sundgren J E 2001 Appl. Phys. Lett. 79 4348
[26] Hofsäss H, Eldermann H F, Merk R, Sebastian M, Ronning C 1998 J. Appl. Phys. A 66 153
[27] Majumdar A, Schäfer J, Mishra P, Ghose D, Meichsner J, Hippler R 2007 Surf. Coat. Technol. 201 6437
[28] McCann R, Roy S S, Papakonstantinou P, Bain M F, Gamble H S, McLaughlin J A 2005 Thin Solid Films 482 34
[29] Bhattacharyya S, Hong J, Turban G 1998 J. Appl. Phys. 83 3922
[30] Kaukonen M, Nieminen R M, Poykko S, Seitsonen A P 1999 Phys. Rev. Lett. 83 5346
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