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Capacitance scattering mechanism in lattice-matched In0.17Al0.83N/GaN heterojunction Schottky diodes

Ren Jian Su Li-Na Li Wen-Jia

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Capacitance scattering mechanism in lattice-matched In0.17Al0.83N/GaN heterojunction Schottky diodes

Ren Jian, Su Li-Na, Li Wen-Jia
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  • Abstract views:  5920
  • PDF Downloads:  53
  • Cited By: 0
Publishing process
  • Received Date:  29 May 2018
  • Accepted Date:  01 November 2018
  • Published Online:  20 December 2019

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