Point defects: key issues for II-oxides wide-bandgap semiconductors development

Xie Xiu-Hua; Li Bing-Hui; Zhang Zhen-Zhong; Liu Lei; Liu Ke-Wei; Shan Chong-Xin; Shen De-Zhen

doi:10.7498/aps.68.20191043

Abstract

II-oxides wide-bandgap semiconductor, including the beryllium oxide (BeO), magnesium oxide (MgO), zinc oxide (ZnO), have large exciton binding energy (ZnO 60 meV, MgO 80 meV), high optical gain (ZnO 300 cm^–1) and wide tunable band gap (3.37 eV ZnO, MgO 7.8 eV, BeO 10.6 eV), which are the advantages of achieving low-threshold laser devices in the ultraviolet wavelength. It is also one of the important candidates to replace the traditional gas arc lamp (such as mercury lamp, deuterium lamp, excimer lamp, xenon lamp etc.) as the source of deep ultraviolet and even vacuum ultraviolet. Although, during the past decades, the ZnO-based pn homojunction devices have made great progress in the near-UV electroluminescence, but as the band gap broadens, the acceptor (or donor) ionization energy becomes higher (On the order of hundreds meV), which causing the room temperature equivalent thermal energy (26 meV) cannot make the impurities ionizing effectively. In addition, the self-compensation effect in the doping process further weakens the carrier yield. These above drawbacks have become the bottleneck that hinders II-oxides wide-bandgap semiconductor from achieving ultraviolet laser devices and expanding to shorter wavelengths, and are also a common problem faced by other wide-bandgap semiconductor materials. The regulation of the electrical and luminescent properties of materials often depends on the control of critical defect states. The rich point defects and their combination types make the II-oxides wide-bandgap semiconductors an important platform for studying defect physics. For the identification and characterization of specific point defects, it is expected to discover and further construct shallower defect states, which will provide a basis for the regulation of electrical performance. In this paper, recent research results of II-oxides wide-bandgap semiconductors will be described from three aspects: high-quality epitaxial growth, impurity and point defects, p-type doping and ultraviolet electroluminescence. Through the overview of related research works, II-oxides wide-bandgap semiconductors are clarified as deep ultraviolet light sources materials. Meanwhile, indicates that the key to the regulation of electrical performance in the future lies in the regulation of point defects.

Keywords:

Authors and contacts

1.
State Key Laboratory of Luinescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2.
Zhengzhou University, School of Physics and Engineering, Zhengzhou 450001, China

Corresponding author: Shen De-Zhen, shendz@ciomp.ac.cn

Funds: Project supported by the National Key Scientific Instrument and Equipment Development Project of China (Grant No. 11727902) and the Excellent Young Scientists Fund of Jilin Province, China (Grant No. 20190103042JH).

FullText HTML : translate this paragraph

References

[1]	Prakash V, Agarwal A, Mussada E K 2019 Silicon 11 1617 Google Scholar
[2]	Neubert M, Rudolph P 2001 Prog. Cryst. Growth Charact. Mater. 43 119 Google Scholar
[3]	Mullin J B 2004 J. Cryst. Growth 264 578 Google Scholar
[4]	Nakamura S 2015 Rev. Mod. Phys. 87 1139 Google Scholar
[5]	Akasaki I 2015 Rev. Mod. Phys. 87 1119 Google Scholar
[6]	Amano H 2015 Rev. Mod. Phys. 87 1133 Google Scholar
[7]	Liang Y H, Towe E 2018 Appl. Phys. Rev. 5 011107 Google Scholar
[8]	Walsh A, Zunger A 2017 Nat. Mater. 16 964 Google Scholar
[9]	Chen Y F, Ko H J, Hong S K, Yao T, Segawa Y 2000 J. Cryst. Growth 214 87 Google Scholar
[10]	Chen Y F, Ko H J, Hong S K, Yao T 2000 Appl. Phys. Lett. 76 559 Google Scholar
[11]	Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara K, Tanabe T, Takasu H 2000 Appl. Phys. Lett. 77 1801 Google Scholar
[12]	Fons P, Iwata K, Niki S, Yamada A, Matsubara K, Watanabe M 2000 J. Cryst. Growth 209 532 Google Scholar
[13]	Liu J S, Shan C X, Wang S P, Sun F, Yao B, Shen D Z 2010 J. Cryst. Growth 312 2861 Google Scholar
[14]	Kato H, Miyamoto K, Sano M, Yao T 2004 Appl. Phys. Lett. 84 4562 Google Scholar
[15]	Hong S K, Hanada T, Ko H J, Chen Y F, Yao T, Imai D, Araki K, Shinohara M, Saitoh K, Terauchi M 2002 Phys. Rev. B 65 115331 Google Scholar
[16]	Park J S, Hong S K, Minegishi T, Park S H, Im I H, Hanada T, Cho M W, Yao T, Lee J W, Lee J Y 2007 Appl. Phys. Lett. 90 201907 Google Scholar
[17]	Xie X H, Li B H, Zhang Z Z, Wang S P, Shen D Z 2018 Sci. Rep. 8 17020 Google Scholar
[18]	Helbig R 1972 J. Cryst. Growth. 15 25 Google Scholar
[19]	Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Cantwell G, Harsch W C 1998 Solid State Commun. 105 399 Google Scholar
[20]	Ohshima E, Ogino H, Niikura I, Maeda K, Sato M, Ito M, Fukuda T 2004 J. Cryst. Growth 260 166 Google Scholar
[21]	Maeda K, Sato M, Niikura I, Fukuda T 2005 Semicond. Sci. Technol. 20 S49 Google Scholar
[22]	Ehrentraut D, Maeda K, Kano M, Fujii K, Fukuda T 2011 J. Cryst. Growth 320 18 Google Scholar
[23]	Graubner S, Neumann C, Volbers N, Meyer B K, Blasing J, Krost A 2007 Appl. Phys. Lett. 90 042103 Google Scholar
[24]	Takamizu D, Nishimoto Y, Akasaka S, Yuji H, Tamura K, Nakahara K, Onuma T, Tanabe T, Takasu H, Kawasaki M, Chichibu S F 2008 J. Appl. Phys. 103 063502 Google Scholar
[25]	Kato H, Sano M, Miyamoto K, Yao T 2003 Jpn. J. Appl. Phys. Part 2-Lett. 42 L1002 Google Scholar
[26]	Kato H, Sano M, Miyamoto K, Yao T 2003 Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap. 42 2241 Google Scholar
[27]	Park S H, Minegishi T, Lee H J, Oh D C, Ko H J, Chang J H, Yao T 2011 J. Appl. Phys. 110 053520 Google Scholar
[28]	Tsukazaki A, Akasaka S, Nakahara K, Ohno Y, Ohno H, Maryenko D, Ohtomo A, Kawasaki M 2010 Nat. Mater. 9 889 Google Scholar
[29]	Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501 Google Scholar
[30]	Makino T, Segawa Y, Kawasaki M, Ohtomo A, Shiroki R, Tamura K, Yasuda T, Koinuma H 2001 Appl. Phys. Lett. 78 1237 Google Scholar
[31]	Choopun S, Vispute R D, Yang W, Sharma R P, Venkatesan T, Shen H 2002 Appl. Phys. Lett. 80 1529 Google Scholar
[32]	Sharma A K, Narayan J, Muth J F, Teng C W, Jin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 75 3327 Google Scholar
[33]	Teng C W, Muth J F, Ozgur U, Bergmann M J, Everitt H O, Sharma A K, Jin C, Narayan J 2000 Appl. Phys. Lett. 76 979 Google Scholar
[34]	Coli G, Bajaj K K 2001 Appl. Phys. Lett. 78 2861 Google Scholar
[35]	Ohtomo A, Shiroki R, Ohkubo I, Koinuma H, Kawasaki M 1999 Appl. Phys. Lett. 75 4088 Google Scholar
[36]	Vashaei Z, Minegishi T, Suzuki H, Hanada T, Cho M W, Yao T, Setiawan A 2005 J. Appl. Phys. 98 054911 Google Scholar
[37]	Tanaka H, Fujita S, Fujita S 2005 Appl. Phys. Lett. 86 192911 Google Scholar
[38]	Zheng Q H, Huang F, Ding K, Huang J, Chen D G, Zhan Z B, Lin Z 2011 Appl. Phys. Lett. 98 221112 Google Scholar
[39]	Wang L K, Ju Z G, Zhang J Y, Zheng J, Shen D Z, Yao B, Zhao D X, Zhang Z Z, Li B H, Shan C X 2009 Appl. Phys. Lett. 95 131113 Google Scholar
[40]	Xie X H, Zhang Z Z, Li B H, Wang S P, Jiang M M, Shan C X, Zhao D X, Chen H Y, Shen D Z 2014 Opt. Express 22 246 Google Scholar
[41]	Ju Z G, Shan C X, Yang C L, Zhang J Y, Yao B, Zhao D X, Shen D Z, Fan X W 2009 Appl. Phys. Lett. 94 101902 Google Scholar
[42]	Ju Z G, Shan C X, Jiang D Y, Zhang J Y, Yao B, Zhao D X, Shen D Z, Fan X W 2008 Appl. Phys. Lett. 93 173505 Google Scholar
[43]	Kaneko K, Onuma T, Tsumura K, Uchida T, Jinno R, Yamaguchi T, Honda T, Fujita S 2016 Appl. Phys. Express 9 111102 Google Scholar
[44]	Onuma T, Ono M, Ishii K, Kaneko K, Yamaguchi T, Fujita S, Honda T 2018 Appl. Phys. Lett. 113 061903 Google Scholar
[45]	Kaneko K, Tsumura K, Ishii K, Onuma T, Honda T, Fujita S 2018 J. Electron. Mater. 47 4356 Google Scholar
[46]	Wen M C, Lu S A, Chang L, Chou M M C, Ploog K H 2017 J. Cryst. Growth 477 169 Google Scholar
[47]	Ryu Y R, Lee T S, Lubguban J A, Corman A B, White H W, Leem J H, Han M S, Park Y S, Youn C J, Kim W J 2006 Appl. Phys. Lett. 88 052103 Google Scholar
[48]	Kim W J, Leem J H, Han M S, Ryu Y R, Lee T S 2006 J. Appl. Phys. 99 096104 Google Scholar
[49]	Su L X, Zhu Y, Chen M M, Zhang Q L, Su Y Q, Ji X, Wu T Z, Gui X C, Xiang R, Tang Z K 2013 Appl. Phys. Lett. 103 072104 Google Scholar
[50]	Jeong T S, Han M S, Kim J H, Bae S J, Youn C J 2007 J. Phys. D-Appl. Phys. 40 370 Google Scholar
[51]	Chen M M, Xiang R, Su L X, Zhang Q L, Cao J S, Zhu Y, Gui X C, Wu T Z, Tang Z K 2012 J. Phys. D-Appl. Phys. 45 455101 Google Scholar
[52]	Ye D Q, Mei Z X, Liang H L, Liu Y L, Azarov A, Kuznetsov A, Du X L 2014 J. Phys. D-Appl. Phys. 47 175102 Google Scholar
[53]	Park S H, Ahn D 2014 Physica B 441 12 Google Scholar
[54]	Su L X, Zhu Y, Zhang Q L, Chen M M, Wu T Z, Gui X C, Pan B C, Xiang R, Tang Z K 2013 Appl. Surf. Sci. 274 341 Google Scholar
[55]	Yong D Y, He H Y, Su L X, Zhu Y, Tang Z K, Pan B C 2014 J. Alloys Compd. 608 197 Google Scholar
[56]	Ding K, Ullah M B, Avrutin V, Ozgur U, Morkoc H 2017 Appl. Phys. Lett. 111 182101 Google Scholar
[57]	Gorczyca I, Teisseyre H, Suski T, Christensen N E, Svane A 2016 J. Appl. Phys. 120 215704 Google Scholar
[58]	Toporkov M, Demchenko D O, Zolnai Z, Volk J, Avrutin V, Morkoc H, Ozgur U 2016 J. Appl. Phys. 119 095311 Google Scholar
[59]	Toporkov M, Avrutin V, Okur S, Izyumskaya N, Demchenko D, Volk J, Smith D J, Morkoc H, Ozgur U 2014 J. Cryst. Growth 402 60 Google Scholar
[60]	Yang C, Li X M, Gao X D, Cao X, Yang R, Li Y Z 2010 J. Cryst. Growth 312 978 Google Scholar
[61]	Toporkov M, Ullah M B, Demchenko D O, Avrutin V, Morkoc H, Ozgur U 2017 J. Cryst. Growth 467 145 Google Scholar
[62]	Ullah M B, Avrutin V, Nakagawara T, Hafiz S, Altuntas I, Ozgur U, Morkoc H 2017 J. Appl. Phys. 121 185704 Google Scholar
[63]	Roessler D M, Walker W C 1967 Phys. Rev. 159 733 Google Scholar
[64]	Cordero B, Gomez V, Platero-Prats A E, Reves M, Echeverria J, Cremades E, Barragan F, Alvarez S 2008 Dalton Trans. 21 2832
[65]	Ashrafi A, Jagadish C 2007 J. Appl. Phys. 102 071101 Google Scholar
[66]	Zhu Y, Chen M M, Su L X, Su Y Q, Ji X, Gui X C, Tang Z K 2014 J. Alloys Compd. 616 505 Google Scholar
[67]	Chen M M, Zhu Y, Su L X, Zhang Q L, Chen A Q, Ji X, Xiang R, Gui X C, Wu T Z, Pan B C, Tang Z K 2013 Appl. Phys. Lett. 102 202103 Google Scholar
[68]	Freysoldt C, Grabowski B, Hickel T, Neugebauer J, Kresse G, Janotti A, Van de Walle C G 2014 Rev. Mod. Phys. 86 253 Google Scholar
[69]	Kohan A F, Ceder G, Morgan D, Van de Walle C G 2000 Phys. Rev. B 61 15019 Google Scholar
[70]	Sokol A A, French S A, Bromley S T, Catlow C R A, van Dam H J J, Sherwood P 2007 Faraday Discuss. 134 267 Google Scholar
[71]	Lyons J L, Janotti A, Van de Walle C G 2009 Appl. Phys. Lett. 95 252105 Google Scholar
[72]	Wang L G, Zunger A 2003 Phys. Rev. Lett. 90 256401 Google Scholar
[73]	Duan X M, Stampfl C, Bilek M M M, McKenzie D R 2009 Phys. Rev. B 79 235208 Google Scholar
[74]	Urban D F, Korner W, Elsasser C 2016 Phys. Rev. B 94 075140 Google Scholar
[75]	Puchala B, Morgan D 2012 Phys. Rev. B 85 195207 Google Scholar
[76]	Limpijumnong S, Zhang S B, Wei S H, Park C H 2004 Phys. Rev. Lett. 92 155504 Google Scholar
[77]	Li J, Wei S H, Li S S, Xia J B 2006 Phys. Rev. B 74 081201 Google Scholar
[78]	Gai Y Q, Li J B, Li S S, Xia J B, Yan Y F, Wei S H 2009 Phys. Rev. B 80 153201 Google Scholar
[79]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2018 AIP Adv. 8 035115
[80]	Lautenschlaeger S, Sann J, Volbers N, Meyer B K, Hoffmann A, Haboeck U, Wagner M R 2008 Phys. Rev. B 77 144108
[81]	Akasaka S, Nakahara K, Yuji H, Tsukazaki A, Ohtomo A, Kawasaki M 2011 Appl. Phys. Express 4 035701
[82]	Kozuka Y, Tsukazaki A, Kawasaki M 2014 Appl. Phys. Rev. 1 011303
[83]	Akasaka S, Tsukazaki A, Nakahara K, Ohtomo A, Kawasaki M 2011 Jpn. J. Appl. Phys. 50 080215
[84]	Oba F, Choi M, Togo A, Tanaka I 2011 Sci. Technol. Adv. Mater. 12 034302 Google Scholar
[85]	Ellmer K, Bikowski A 2016 J. Phys. D-Appl. Phys. 49 413002 Google Scholar
[86]	McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101 Google Scholar
[87]	Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 126501 Google Scholar
[88]	Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 165202 Google Scholar
[89]	Oba F, Togo A, Tanaka I, Paier J, Kresse G 2008 Phys. Rev. B 77 245202 Google Scholar
[90]	Oba F, Nishitani S R, Isotani S, Adachi H, Tanaka I 2001 J. Appl. Phys. 90 824 Google Scholar
[91]	Borseth T M, Svensson B G, Kuznetsov A Y, Klason P, Zhao Q X, Willander M 2006 Appl. Phys. Lett. 89 262112 Google Scholar
[92]	Look D C, Leedy K D, Vines L, Svensson B G, Zubiaga A, Tuomisto F, Doutt D R, Brillson L J 2011 Phys. Rev. B 84 115202 Google Scholar
[93]	Vidya R, Ravindran P, Fjellvag H, Svensson B G, Monakhov E, Ganchenkova M, Nieminen R M 2011 Phys. Rev. B 83 045206 Google Scholar
[94]	Ton-That C, Weston L, Phillips M R 2012 Phys. Rev. B 86 115205 Google Scholar
[95]	Alkauskas A, Pasquarello A 2011 Phys. Rev. B 84 125206 Google Scholar
[96]	Knutsen K E, Galeckas A, Zubiaga A, Tuomisto F, Farlow G C, Svensson B G, Kuznetsov A Y 2012 Phys. Rev. B 86 121203 Google Scholar
[97]	Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phys. D-Appl. Phys. 45 195104 Google Scholar
[98]	Kim D H, Lee G W, Kim Y C 2012 Solid State Commun. 152 1711 Google Scholar
[99]	Travlos A, Boukos N, Chandrinou C, Kwack H S, Dang L S 2009 J. Appl. Phys. 106 104307 Google Scholar
[100]	Selim F A, Weber M H, Solodovnikov D, Lynn K G 2007 Phys. Rev. Lett. 99 085502 Google Scholar
[101]	Erhart P, Albe K 2006 Appl. Phys. Lett. 88 201918 Google Scholar
[102]	Vlasenko L S, Watkins G D 2005 Phys. Rev. B 72 035203 Google Scholar
[103]	Liu H Y, Izyumskaya N, Avrutin V 2012 J. Appl. Phys. 112 033706 Google Scholar
[104]	Liu L, Xu J L, Wang D D, Jiang M M, Wang S P, Li B H, Zhang Z Z, Zhao D X, Shan C X, Yao B, Shen D Z 2012 Phys. Rev. Lett. 108 215501 Google Scholar
[105]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2017 J. Phys. D-Appl. Phys. 50 325304 Google Scholar
[106]	Sanyal D, Roy T K, Chakrabarti M, Dechoudhury S, Bhowmick D, Chakrabarti A 2008 J. Phys.-Condes. Matter 20 045217 Google Scholar
[107]	Ono R, Togimitsu T, Sato W 2015 J. Radioanal. Nucl. Chem. 303 1223 Google Scholar
[108]	Khan E H, Weber M H, McCluskey M D 2013 Phys. Rev. Lett. 111 017401 Google Scholar
[109]	Makkonen I, Korhonen E, Prozheeva V, Tuomisto F 2016 J. Phys.-Condes. Matter 28 224002 Google Scholar
[110]	Chakrabarti M, Jana D, Sanyal D 2013 Vacuum 87 16 Google Scholar
[111]	Sarkar A, Chakrabarti M, Ray S K, Bhowmick D, Sanyal D 2011 J. Phys.-Condes. Matter 23 155801 Google Scholar
[112]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Zuniga-Perez J, Munoz-Sanjose V 2007 Phys. Rev. B 75 205305 Google Scholar
[113]	Chen Z Q, Betsuyaku K, Kawasuso A 2008 Phys. Rev. B 77 113204 Google Scholar
[114]	Erdem E 2017 Nanoscale 9 10983 Google Scholar
[115]	Lambrecht W R L, Boonchun A 2013 Phys. Rev. B 87 195207 Google Scholar
[116]	Parashar S K S, Murty B S, Repp S, Weber S, Erdem E 2012 J. Appl. Phys. 111 113712 Google Scholar
[117]	Vlasenko L S 2010 Appl. Magn. Reson. 39 103 Google Scholar
[118]	Vlasenko L S 2009 Physica B 404 4774 Google Scholar
[119]	Zheng H, Weismann A, Berndt R 2013 Phys. Rev. Lett. 110 226101 Google Scholar
[120]	Xu H, Dong L, Shi X Q, Van Hove M A, Ho W K, Lin N, Wu H S, Tong S Y 2014 Phys. Rev. B 89 235403 Google Scholar
[121]	Stavale F, Nilius N, Freund H J 2013 J. Phys. Chem. Lett. 4 3972 Google Scholar
[122]	Dulub O, Boatner L A, Diebold U 2002 Surf. Sci. 519 201 Google Scholar
[123]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 053516 Google Scholar
[124]	Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943 Google Scholar
[125]	Dong Y F, Tuomisto F, Svensson B G, Kuznetsov A Y, Brillson L J 2010 Phys. Rev. B 81 081201 Google Scholar
[126]	Reshchikov M A 2014 J. Appl. Phys. 115 012010 Google Scholar
[127]	Zhu L C, Lockrey M, Phillips M R, Cuong T T 2018 Phys. Status Solidi A-Appl. Mat. 215 1800389 Google Scholar
[128]	Wu X L, Siu G G, Fu C L, Ong H C 2001 Appl. Phys. Lett. 78 2285 Google Scholar
[129]	Liu X Y, Shan C X, Zhu H, Li B H, Jiang M M, Yu S F, Shen D Z 2015 Sci. Rep. 5 13641 Google Scholar
[130]	Zhu H, Shan C X, Li B H, Zhang Z Z, Shen D Z, Choy K L 2011 J. Mater. Chem. 21 2848 Google Scholar
[131]	McCluskey M D, Corolewski C D, Lv J P, Tarun M C, Teklemichael S T, Walter E D, Norton M G, Harrison K W, Ha S 2015 J. Appl. Phys. 117 112802 Google Scholar
[132]	Fan J C, Sreekanth K M, Xie Z, Chang S L, Rao K V 2013 Prog. Mater. Sci. 58 874 Google Scholar
[133]	Reynolds J G, Reynolds C L 2014 Adv. Condens. Matter Phys. 2014 457058
[134]	Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu S F, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M 2005 Nat. Mater. 4 42
[135]	Jiao S J, Zhang Z Z, Lu Y M, Shen D Z, Yao B, Zhang J Y, Li B H, Zhao D X, Fan X W, Tang Z K 2006 Appl. Phys. Lett. 88 031911 Google Scholar
[136]	Chu S, Olmedo M, Yang Z, Kong J Y, Liu J L 2008 Appl. Phys. Lett. 93 181106 Google Scholar
[137]	Chu S, Wang G P, Zhou W H, Lin Y Q, Chernyak L, Zhao J Z, Kong J Y, Li L, Ren J J, Liu J L 2011 Nat. Nanotechnol. 6 506 Google Scholar
[138]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2018 J. Phys. D-Appl. Phys. 51 225104 Google Scholar
[139]	Stehr J E, Wang X J, Filippov S, Pearton S J, Ivanov I G, Chen W M, Buyanova I A 2013 J. Appl. Phys. 113 103509 Google Scholar
[140]	Yong D Y, He H Y, Tang Z K, Wei S H, Pan B C 2015 Phys. Rev. B 92 235207 Google Scholar
[141]	Chavillon B, Cario L, Renaud A, Tessier F, Chevire F, Boujtita M, Pellegrin Y, Blart E, Smeigh A 2012 J. Am. Chem. Soc. 134 464 Google Scholar
[142]	Ye Z Z, He H P, Jiang L 2018 Nano Energy 52 527 Google Scholar
[143]	Chen A Q, Zhu H, Wu Y Y, Chen M M, Zhu Y, Gui X C, Tang Z K 2016 Adv. Funct. Mater. 26 3696 Google Scholar
[144]	Sun F, Shan C X, Li B H, Zhang Z Z, Shen D Z, Zhang Z Y, Fan D 2011 Opt. Lett. 36 499 Google Scholar
[145]	Liu J S, Shan C X, Shen H, Li B H, Zhang Z Z, Liu L, Zhang L G, Shen D Z 2012 Appl. Phys. Lett. 101 011106 Google Scholar

Cited By

图 1 ZnO外延生长过程中缓冲层的RHEED线条图像演变过程　(a)氧等离子体处理后的蓝宝石(0001)表面; (b) 二维成核阶段的MgO缓冲层表面; (c) MgO缓冲层开始三维成岛状生长; (d) 薄层低温ZnO缓冲层生长在MgO上; (e) 退火后的ZnO缓冲层表现出平整二维表面^[9]

Figure 1. Evolution of RHEED line image of buffer layer during epitaxial growth of ZnO: (a) Oxygen plasma treated sapphire (0001) surface; (b) MgO buffer layer surface in two-dimensional nucleation stage; (c) the MgO buffer layer begins to grow into three-dimensional islands; (d) thin layer low temperature ZnO buffer layer grown on MgO; (e) annealed ZnO buffer layer exhibits a flat two-dimensional surface^[9]

DownLoad: Full-Size Img PowerPoint

图 2 ZnO在c面蓝宝石上的原子排列示意图　(a)厚度为1 nm的MgO缓冲层; (b)厚度大于3 nm的MgO缓冲层^[14]

Figure 2. Schematic diagram of atomic arrangement of ZnO on c-sapphire: (a) MgO buffer layer with a thickness of 1 nm; (b) MgO buffer layer with a thickness greater than 3 nm^[14]

DownLoad: Full-Size Img PowerPoint

图 3 ZnO与GaN异质界面的STEM图像, 通过Zn束流保护, 获得了清晰陡峭的界面, 保证了外延层的Zn极性均一^[17]

Figure 3. The STEM image of the hetero interface between ZnO and GaN, and it is protected by Zn beam, which obtains a clear and sharp interface and ensures uniformity of Zn polarity in the epitaxial layer^[17]

DownLoad: Full-Size Img PowerPoint

图 4 N掺杂MgZnO薄膜原子力图像, 粗糙度为0.72 nm^[29]

Figure 4. Atomic force image of N-doped MgZnO film with roughness of 0.72 nm^[29]

DownLoad: Full-Size Img PowerPoint

图 5 II族氧化物半导体带隙与晶格常数关系

Figure 5. Relationship between band gap and lattice constant of group II oxide semiconductors.

DownLoad: Full-Size Img PowerPoint

图 6 (a), (b)二维电子气系统中应变层应力类型与压电极化方向; (c) BeMgZnO体系下应变类型随组分比例的变化情况^[56]

Figure 6. (a), (b) Strain stress type and piezoelectric polarization direction in two-dimensional electron gas system; (c) variation of strain type with composition ratio in BeMgZnO system^[56]

DownLoad: Full-Size Img PowerPoint

图 7 ZnO薄膜中杂质浓度的深度分布情况　(a)非故意掺杂层中Si, Mo, Ta, Al的分布情况; (b)氮掺杂层中C, B, N, Cl, F的分布情况; (c) 施主型杂质元素经抑制后的纵向分布情况^[79]

Figure 7. Depth distribution of impurity concentration in ZnO thin films: (a) Distribution of Si, Mo, Ta and Al in unintentionally doped layers; (b) longitudinal distribution of donor-type impurity elements after suppression^[79]

DownLoad: Full-Size Img PowerPoint

图 8 ZnO单晶衬底上外延层中杂质元素的SIMS数据^[80]

Figure 8. SIMS data of impurity elements in epitaxial layers on ZnO single crystal substrates^[80]

DownLoad: Full-Size Img PowerPoint

图 9 极性面ZnO单晶衬底在氧环境下经1150 ℃退火1h前后, 杂质种类及含量变化情况^[23]

Figure 9. Changes in impurity types and contents of O-polar ZnO single crystal substrate after annealing at 1150 ℃ for 1 hour in an oxygen atmosphere^[23]

DownLoad: Full-Size Img PowerPoint

图 10 (a)稀盐酸刻蚀后的ZnO单晶Zn极性表面; (b)稀盐酸刻蚀前后, Si元素的深度分布^[81,82]

Figure 10. (a) Zn polar surface of ZnO single crystal after being etched by dilute hydrochloric acid; (b) depth distribution of Si element before and after being etched dilute hydrochloric acid^[81,82]

DownLoad: Full-Size Img PowerPoint

图 11 沿极性表面外延时, Zn极性与O极性表面极化电荷分布情况以及利用光生非平衡载流子构建Zn极性表面层富电子环境^[17]

Figure 11. Zn polar and O polar surface polarized charge distribution along epitaxial surface and Zn polar surface layer rich electronic environment using photogenerated unbalanced carriers^[17]

DownLoad: Full-Size Img PowerPoint

图 12 Zn极性表面(2 × 2) + V_Zn重构的STM图像及结构示意图^[105]

Figure 12. STM image and structure diagram of Zn polar surface (2 × 2) + V_Zn reconstruction^[105]

DownLoad: Full-Size Img PowerPoint

[1]	Prakash V, Agarwal A, Mussada E K 2019 Silicon 11 1617 Google Scholar
[2]	Neubert M, Rudolph P 2001 Prog. Cryst. Growth Charact. Mater. 43 119 Google Scholar
[3]	Mullin J B 2004 J. Cryst. Growth 264 578 Google Scholar
[4]	Nakamura S 2015 Rev. Mod. Phys. 87 1139 Google Scholar
[5]	Akasaki I 2015 Rev. Mod. Phys. 87 1119 Google Scholar
[6]	Amano H 2015 Rev. Mod. Phys. 87 1133 Google Scholar
[7]	Liang Y H, Towe E 2018 Appl. Phys. Rev. 5 011107 Google Scholar
[8]	Walsh A, Zunger A 2017 Nat. Mater. 16 964 Google Scholar
[9]	Chen Y F, Ko H J, Hong S K, Yao T, Segawa Y 2000 J. Cryst. Growth 214 87 Google Scholar
[10]	Chen Y F, Ko H J, Hong S K, Yao T 2000 Appl. Phys. Lett. 76 559 Google Scholar
[11]	Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara K, Tanabe T, Takasu H 2000 Appl. Phys. Lett. 77 1801 Google Scholar
[12]	Fons P, Iwata K, Niki S, Yamada A, Matsubara K, Watanabe M 2000 J. Cryst. Growth 209 532 Google Scholar
[13]	Liu J S, Shan C X, Wang S P, Sun F, Yao B, Shen D Z 2010 J. Cryst. Growth 312 2861 Google Scholar
[14]	Kato H, Miyamoto K, Sano M, Yao T 2004 Appl. Phys. Lett. 84 4562 Google Scholar
[15]	Hong S K, Hanada T, Ko H J, Chen Y F, Yao T, Imai D, Araki K, Shinohara M, Saitoh K, Terauchi M 2002 Phys. Rev. B 65 115331 Google Scholar
[16]	Park J S, Hong S K, Minegishi T, Park S H, Im I H, Hanada T, Cho M W, Yao T, Lee J W, Lee J Y 2007 Appl. Phys. Lett. 90 201907 Google Scholar
[17]	Xie X H, Li B H, Zhang Z Z, Wang S P, Shen D Z 2018 Sci. Rep. 8 17020 Google Scholar
[18]	Helbig R 1972 J. Cryst. Growth. 15 25 Google Scholar
[19]	Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Cantwell G, Harsch W C 1998 Solid State Commun. 105 399 Google Scholar
[20]	Ohshima E, Ogino H, Niikura I, Maeda K, Sato M, Ito M, Fukuda T 2004 J. Cryst. Growth 260 166 Google Scholar
[21]	Maeda K, Sato M, Niikura I, Fukuda T 2005 Semicond. Sci. Technol. 20 S49 Google Scholar
[22]	Ehrentraut D, Maeda K, Kano M, Fujii K, Fukuda T 2011 J. Cryst. Growth 320 18 Google Scholar
[23]	Graubner S, Neumann C, Volbers N, Meyer B K, Blasing J, Krost A 2007 Appl. Phys. Lett. 90 042103 Google Scholar
[24]	Takamizu D, Nishimoto Y, Akasaka S, Yuji H, Tamura K, Nakahara K, Onuma T, Tanabe T, Takasu H, Kawasaki M, Chichibu S F 2008 J. Appl. Phys. 103 063502 Google Scholar
[25]	Kato H, Sano M, Miyamoto K, Yao T 2003 Jpn. J. Appl. Phys. Part 2-Lett. 42 L1002 Google Scholar
[26]	Kato H, Sano M, Miyamoto K, Yao T 2003 Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap. 42 2241 Google Scholar
[27]	Park S H, Minegishi T, Lee H J, Oh D C, Ko H J, Chang J H, Yao T 2011 J. Appl. Phys. 110 053520 Google Scholar
[28]	Tsukazaki A, Akasaka S, Nakahara K, Ohno Y, Ohno H, Maryenko D, Ohtomo A, Kawasaki M 2010 Nat. Mater. 9 889 Google Scholar
[29]	Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501 Google Scholar
[30]	Makino T, Segawa Y, Kawasaki M, Ohtomo A, Shiroki R, Tamura K, Yasuda T, Koinuma H 2001 Appl. Phys. Lett. 78 1237 Google Scholar
[31]	Choopun S, Vispute R D, Yang W, Sharma R P, Venkatesan T, Shen H 2002 Appl. Phys. Lett. 80 1529 Google Scholar
[32]	Sharma A K, Narayan J, Muth J F, Teng C W, Jin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 75 3327 Google Scholar
[33]	Teng C W, Muth J F, Ozgur U, Bergmann M J, Everitt H O, Sharma A K, Jin C, Narayan J 2000 Appl. Phys. Lett. 76 979 Google Scholar
[34]	Coli G, Bajaj K K 2001 Appl. Phys. Lett. 78 2861 Google Scholar
[35]	Ohtomo A, Shiroki R, Ohkubo I, Koinuma H, Kawasaki M 1999 Appl. Phys. Lett. 75 4088 Google Scholar
[36]	Vashaei Z, Minegishi T, Suzuki H, Hanada T, Cho M W, Yao T, Setiawan A 2005 J. Appl. Phys. 98 054911 Google Scholar
[37]	Tanaka H, Fujita S, Fujita S 2005 Appl. Phys. Lett. 86 192911 Google Scholar
[38]	Zheng Q H, Huang F, Ding K, Huang J, Chen D G, Zhan Z B, Lin Z 2011 Appl. Phys. Lett. 98 221112 Google Scholar
[39]	Wang L K, Ju Z G, Zhang J Y, Zheng J, Shen D Z, Yao B, Zhao D X, Zhang Z Z, Li B H, Shan C X 2009 Appl. Phys. Lett. 95 131113 Google Scholar
[40]	Xie X H, Zhang Z Z, Li B H, Wang S P, Jiang M M, Shan C X, Zhao D X, Chen H Y, Shen D Z 2014 Opt. Express 22 246 Google Scholar
[41]	Ju Z G, Shan C X, Yang C L, Zhang J Y, Yao B, Zhao D X, Shen D Z, Fan X W 2009 Appl. Phys. Lett. 94 101902 Google Scholar
[42]	Ju Z G, Shan C X, Jiang D Y, Zhang J Y, Yao B, Zhao D X, Shen D Z, Fan X W 2008 Appl. Phys. Lett. 93 173505 Google Scholar
[43]	Kaneko K, Onuma T, Tsumura K, Uchida T, Jinno R, Yamaguchi T, Honda T, Fujita S 2016 Appl. Phys. Express 9 111102 Google Scholar
[44]	Onuma T, Ono M, Ishii K, Kaneko K, Yamaguchi T, Fujita S, Honda T 2018 Appl. Phys. Lett. 113 061903 Google Scholar
[45]	Kaneko K, Tsumura K, Ishii K, Onuma T, Honda T, Fujita S 2018 J. Electron. Mater. 47 4356 Google Scholar
[46]	Wen M C, Lu S A, Chang L, Chou M M C, Ploog K H 2017 J. Cryst. Growth 477 169 Google Scholar
[47]	Ryu Y R, Lee T S, Lubguban J A, Corman A B, White H W, Leem J H, Han M S, Park Y S, Youn C J, Kim W J 2006 Appl. Phys. Lett. 88 052103 Google Scholar
[48]	Kim W J, Leem J H, Han M S, Ryu Y R, Lee T S 2006 J. Appl. Phys. 99 096104 Google Scholar
[49]	Su L X, Zhu Y, Chen M M, Zhang Q L, Su Y Q, Ji X, Wu T Z, Gui X C, Xiang R, Tang Z K 2013 Appl. Phys. Lett. 103 072104 Google Scholar
[50]	Jeong T S, Han M S, Kim J H, Bae S J, Youn C J 2007 J. Phys. D-Appl. Phys. 40 370 Google Scholar
[51]	Chen M M, Xiang R, Su L X, Zhang Q L, Cao J S, Zhu Y, Gui X C, Wu T Z, Tang Z K 2012 J. Phys. D-Appl. Phys. 45 455101 Google Scholar
[52]	Ye D Q, Mei Z X, Liang H L, Liu Y L, Azarov A, Kuznetsov A, Du X L 2014 J. Phys. D-Appl. Phys. 47 175102 Google Scholar
[53]	Park S H, Ahn D 2014 Physica B 441 12 Google Scholar
[54]	Su L X, Zhu Y, Zhang Q L, Chen M M, Wu T Z, Gui X C, Pan B C, Xiang R, Tang Z K 2013 Appl. Surf. Sci. 274 341 Google Scholar
[55]	Yong D Y, He H Y, Su L X, Zhu Y, Tang Z K, Pan B C 2014 J. Alloys Compd. 608 197 Google Scholar
[56]	Ding K, Ullah M B, Avrutin V, Ozgur U, Morkoc H 2017 Appl. Phys. Lett. 111 182101 Google Scholar
[57]	Gorczyca I, Teisseyre H, Suski T, Christensen N E, Svane A 2016 J. Appl. Phys. 120 215704 Google Scholar
[58]	Toporkov M, Demchenko D O, Zolnai Z, Volk J, Avrutin V, Morkoc H, Ozgur U 2016 J. Appl. Phys. 119 095311 Google Scholar
[59]	Toporkov M, Avrutin V, Okur S, Izyumskaya N, Demchenko D, Volk J, Smith D J, Morkoc H, Ozgur U 2014 J. Cryst. Growth 402 60 Google Scholar
[60]	Yang C, Li X M, Gao X D, Cao X, Yang R, Li Y Z 2010 J. Cryst. Growth 312 978 Google Scholar
[61]	Toporkov M, Ullah M B, Demchenko D O, Avrutin V, Morkoc H, Ozgur U 2017 J. Cryst. Growth 467 145 Google Scholar
[62]	Ullah M B, Avrutin V, Nakagawara T, Hafiz S, Altuntas I, Ozgur U, Morkoc H 2017 J. Appl. Phys. 121 185704 Google Scholar
[63]	Roessler D M, Walker W C 1967 Phys. Rev. 159 733 Google Scholar
[64]	Cordero B, Gomez V, Platero-Prats A E, Reves M, Echeverria J, Cremades E, Barragan F, Alvarez S 2008 Dalton Trans. 21 2832
[65]	Ashrafi A, Jagadish C 2007 J. Appl. Phys. 102 071101 Google Scholar
[66]	Zhu Y, Chen M M, Su L X, Su Y Q, Ji X, Gui X C, Tang Z K 2014 J. Alloys Compd. 616 505 Google Scholar
[67]	Chen M M, Zhu Y, Su L X, Zhang Q L, Chen A Q, Ji X, Xiang R, Gui X C, Wu T Z, Pan B C, Tang Z K 2013 Appl. Phys. Lett. 102 202103 Google Scholar
[68]	Freysoldt C, Grabowski B, Hickel T, Neugebauer J, Kresse G, Janotti A, Van de Walle C G 2014 Rev. Mod. Phys. 86 253 Google Scholar
[69]	Kohan A F, Ceder G, Morgan D, Van de Walle C G 2000 Phys. Rev. B 61 15019 Google Scholar
[70]	Sokol A A, French S A, Bromley S T, Catlow C R A, van Dam H J J, Sherwood P 2007 Faraday Discuss. 134 267 Google Scholar
[71]	Lyons J L, Janotti A, Van de Walle C G 2009 Appl. Phys. Lett. 95 252105 Google Scholar
[72]	Wang L G, Zunger A 2003 Phys. Rev. Lett. 90 256401 Google Scholar
[73]	Duan X M, Stampfl C, Bilek M M M, McKenzie D R 2009 Phys. Rev. B 79 235208 Google Scholar
[74]	Urban D F, Korner W, Elsasser C 2016 Phys. Rev. B 94 075140 Google Scholar
[75]	Puchala B, Morgan D 2012 Phys. Rev. B 85 195207 Google Scholar
[76]	Limpijumnong S, Zhang S B, Wei S H, Park C H 2004 Phys. Rev. Lett. 92 155504 Google Scholar
[77]	Li J, Wei S H, Li S S, Xia J B 2006 Phys. Rev. B 74 081201 Google Scholar
[78]	Gai Y Q, Li J B, Li S S, Xia J B, Yan Y F, Wei S H 2009 Phys. Rev. B 80 153201 Google Scholar
[79]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2018 AIP Adv. 8 035115
[80]	Lautenschlaeger S, Sann J, Volbers N, Meyer B K, Hoffmann A, Haboeck U, Wagner M R 2008 Phys. Rev. B 77 144108
[81]	Akasaka S, Nakahara K, Yuji H, Tsukazaki A, Ohtomo A, Kawasaki M 2011 Appl. Phys. Express 4 035701
[82]	Kozuka Y, Tsukazaki A, Kawasaki M 2014 Appl. Phys. Rev. 1 011303
[83]	Akasaka S, Tsukazaki A, Nakahara K, Ohtomo A, Kawasaki M 2011 Jpn. J. Appl. Phys. 50 080215
[84]	Oba F, Choi M, Togo A, Tanaka I 2011 Sci. Technol. Adv. Mater. 12 034302 Google Scholar
[85]	Ellmer K, Bikowski A 2016 J. Phys. D-Appl. Phys. 49 413002 Google Scholar
[86]	McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101 Google Scholar
[87]	Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 126501 Google Scholar
[88]	Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 165202 Google Scholar
[89]	Oba F, Togo A, Tanaka I, Paier J, Kresse G 2008 Phys. Rev. B 77 245202 Google Scholar
[90]	Oba F, Nishitani S R, Isotani S, Adachi H, Tanaka I 2001 J. Appl. Phys. 90 824 Google Scholar
[91]	Borseth T M, Svensson B G, Kuznetsov A Y, Klason P, Zhao Q X, Willander M 2006 Appl. Phys. Lett. 89 262112 Google Scholar
[92]	Look D C, Leedy K D, Vines L, Svensson B G, Zubiaga A, Tuomisto F, Doutt D R, Brillson L J 2011 Phys. Rev. B 84 115202 Google Scholar
[93]	Vidya R, Ravindran P, Fjellvag H, Svensson B G, Monakhov E, Ganchenkova M, Nieminen R M 2011 Phys. Rev. B 83 045206 Google Scholar
[94]	Ton-That C, Weston L, Phillips M R 2012 Phys. Rev. B 86 115205 Google Scholar
[95]	Alkauskas A, Pasquarello A 2011 Phys. Rev. B 84 125206 Google Scholar
[96]	Knutsen K E, Galeckas A, Zubiaga A, Tuomisto F, Farlow G C, Svensson B G, Kuznetsov A Y 2012 Phys. Rev. B 86 121203 Google Scholar
[97]	Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phys. D-Appl. Phys. 45 195104 Google Scholar
[98]	Kim D H, Lee G W, Kim Y C 2012 Solid State Commun. 152 1711 Google Scholar
[99]	Travlos A, Boukos N, Chandrinou C, Kwack H S, Dang L S 2009 J. Appl. Phys. 106 104307 Google Scholar
[100]	Selim F A, Weber M H, Solodovnikov D, Lynn K G 2007 Phys. Rev. Lett. 99 085502 Google Scholar
[101]	Erhart P, Albe K 2006 Appl. Phys. Lett. 88 201918 Google Scholar
[102]	Vlasenko L S, Watkins G D 2005 Phys. Rev. B 72 035203 Google Scholar
[103]	Liu H Y, Izyumskaya N, Avrutin V 2012 J. Appl. Phys. 112 033706 Google Scholar
[104]	Liu L, Xu J L, Wang D D, Jiang M M, Wang S P, Li B H, Zhang Z Z, Zhao D X, Shan C X, Yao B, Shen D Z 2012 Phys. Rev. Lett. 108 215501 Google Scholar
[105]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2017 J. Phys. D-Appl. Phys. 50 325304 Google Scholar
[106]	Sanyal D, Roy T K, Chakrabarti M, Dechoudhury S, Bhowmick D, Chakrabarti A 2008 J. Phys.-Condes. Matter 20 045217 Google Scholar
[107]	Ono R, Togimitsu T, Sato W 2015 J. Radioanal. Nucl. Chem. 303 1223 Google Scholar
[108]	Khan E H, Weber M H, McCluskey M D 2013 Phys. Rev. Lett. 111 017401 Google Scholar
[109]	Makkonen I, Korhonen E, Prozheeva V, Tuomisto F 2016 J. Phys.-Condes. Matter 28 224002 Google Scholar
[110]	Chakrabarti M, Jana D, Sanyal D 2013 Vacuum 87 16 Google Scholar
[111]	Sarkar A, Chakrabarti M, Ray S K, Bhowmick D, Sanyal D 2011 J. Phys.-Condes. Matter 23 155801 Google Scholar
[112]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Zuniga-Perez J, Munoz-Sanjose V 2007 Phys. Rev. B 75 205305 Google Scholar
[113]	Chen Z Q, Betsuyaku K, Kawasuso A 2008 Phys. Rev. B 77 113204 Google Scholar
[114]	Erdem E 2017 Nanoscale 9 10983 Google Scholar
[115]	Lambrecht W R L, Boonchun A 2013 Phys. Rev. B 87 195207 Google Scholar
[116]	Parashar S K S, Murty B S, Repp S, Weber S, Erdem E 2012 J. Appl. Phys. 111 113712 Google Scholar
[117]	Vlasenko L S 2010 Appl. Magn. Reson. 39 103 Google Scholar
[118]	Vlasenko L S 2009 Physica B 404 4774 Google Scholar
[119]	Zheng H, Weismann A, Berndt R 2013 Phys. Rev. Lett. 110 226101 Google Scholar
[120]	Xu H, Dong L, Shi X Q, Van Hove M A, Ho W K, Lin N, Wu H S, Tong S Y 2014 Phys. Rev. B 89 235403 Google Scholar
[121]	Stavale F, Nilius N, Freund H J 2013 J. Phys. Chem. Lett. 4 3972 Google Scholar
[122]	Dulub O, Boatner L A, Diebold U 2002 Surf. Sci. 519 201 Google Scholar
[123]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 053516 Google Scholar
[124]	Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943 Google Scholar
[125]	Dong Y F, Tuomisto F, Svensson B G, Kuznetsov A Y, Brillson L J 2010 Phys. Rev. B 81 081201 Google Scholar
[126]	Reshchikov M A 2014 J. Appl. Phys. 115 012010 Google Scholar
[127]	Zhu L C, Lockrey M, Phillips M R, Cuong T T 2018 Phys. Status Solidi A-Appl. Mat. 215 1800389 Google Scholar
[128]	Wu X L, Siu G G, Fu C L, Ong H C 2001 Appl. Phys. Lett. 78 2285 Google Scholar
[129]	Liu X Y, Shan C X, Zhu H, Li B H, Jiang M M, Yu S F, Shen D Z 2015 Sci. Rep. 5 13641 Google Scholar
[130]	Zhu H, Shan C X, Li B H, Zhang Z Z, Shen D Z, Choy K L 2011 J. Mater. Chem. 21 2848 Google Scholar
[131]	McCluskey M D, Corolewski C D, Lv J P, Tarun M C, Teklemichael S T, Walter E D, Norton M G, Harrison K W, Ha S 2015 J. Appl. Phys. 117 112802 Google Scholar
[132]	Fan J C, Sreekanth K M, Xie Z, Chang S L, Rao K V 2013 Prog. Mater. Sci. 58 874 Google Scholar
[133]	Reynolds J G, Reynolds C L 2014 Adv. Condens. Matter Phys. 2014 457058
[134]	Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu S F, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M 2005 Nat. Mater. 4 42
[135]	Jiao S J, Zhang Z Z, Lu Y M, Shen D Z, Yao B, Zhang J Y, Li B H, Zhao D X, Fan X W, Tang Z K 2006 Appl. Phys. Lett. 88 031911 Google Scholar
[136]	Chu S, Olmedo M, Yang Z, Kong J Y, Liu J L 2008 Appl. Phys. Lett. 93 181106 Google Scholar
[137]	Chu S, Wang G P, Zhou W H, Lin Y Q, Chernyak L, Zhao J Z, Kong J Y, Li L, Ren J J, Liu J L 2011 Nat. Nanotechnol. 6 506 Google Scholar
[138]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2018 J. Phys. D-Appl. Phys. 51 225104 Google Scholar
[139]	Stehr J E, Wang X J, Filippov S, Pearton S J, Ivanov I G, Chen W M, Buyanova I A 2013 J. Appl. Phys. 113 103509 Google Scholar
[140]	Yong D Y, He H Y, Tang Z K, Wei S H, Pan B C 2015 Phys. Rev. B 92 235207 Google Scholar
[141]	Chavillon B, Cario L, Renaud A, Tessier F, Chevire F, Boujtita M, Pellegrin Y, Blart E, Smeigh A 2012 J. Am. Chem. Soc. 134 464 Google Scholar
[142]	Ye Z Z, He H P, Jiang L 2018 Nano Energy 52 527 Google Scholar
[143]	Chen A Q, Zhu H, Wu Y Y, Chen M M, Zhu Y, Gui X C, Tang Z K 2016 Adv. Funct. Mater. 26 3696 Google Scholar
[144]	Sun F, Shan C X, Li B H, Zhang Z Z, Shen D Z, Zhang Z Y, Fan D 2011 Opt. Lett. 36 499 Google Scholar
[145]	Liu J S, Shan C X, Shen H, Li B H, Zhang Z Z, Liu L, Zhang L G, Shen D Z 2012 Appl. Phys. Lett. 101 011106 Google Scholar

[1]	Yan Li-Bin, Bai Yu-Rong, Li Pei, Liu Wen-Bo, He Huan, He Chao-Hui, Zhao Xiao-Hong. First-principles calculations of point defect migration mechanisms in InP. Acta Physica Sinica, 2024, 73(18): 183101. doi: 10.7498/aps.73.20240754
[2]	Lü Yong-Jie, Chen Yan, Ye Fang-Cheng, Cai Li-Bin, Dai Zi-Jie, Ren Yun-Peng. Influcence of external electric field and B/N doping on the band gap of stanene. Acta Physica Sinica, 2024, 73(8): 083101. doi: 10.7498/aps.73.20231935
[3]	Ma Rong-Rong, Ma Chen-Rui, Ge Mei, Guo Shi-Qi, Zhang Jun-Feng. Structural stability and electronic properties of charged point defects in monolayer blue phosphorus. Acta Physica Sinica, 2024, 73(13): 137301. doi: 10.7498/aps.73.20240011
[4]	Deng Chen-Hua, Yu Zhong-Hai, Wang Yu-Tao, Kong Sen, Zhou Chao, Yang Sen. Crystallization kinetics of Ti-doped Nd₂Fe₁₄B/α-Fe nanocomposite permanent magnets. Acta Physica Sinica, 2023, 72(2): 027501. doi: 10.7498/aps.72.20221479
[5]	Zhi Wen-Qiang, Fei Hong-Ming, Han Yu-Hui, Wu Min, Zhang Ming-Da, Liu Xin, Cao Bin-Zhao, Yang Yi-Biao. Unidirectional transmission of funnel-shaped waveguide with complete bandgap. Acta Physica Sinica, 2022, 71(3): 038501. doi: 10.7498/aps.71.20211299
[6]	. Study on unidirectional transmission of funnel-shaped waveguide with complete bandgap. Acta Physica Sinica, 2021, (): . doi: 10.7498/aps.70.20211299
[7]	Zhang Hua-Lin, He Xin, Zhang Zhen-Hua. Magneto-electronic property in zigzag phosphorene nanoribbons doped with transition metal atom. Acta Physica Sinica, 2021, 70(5): 056101. doi: 10.7498/aps.70.20201408
[8]	Mo Man, Zeng Ji-Shu, He Hao, Zhang Liang, Du Long, Fang Zhi-Jie. The first-principle study on the formation energies of Be, Mg and Mn doped CuInO₂. Acta Physica Sinica, 2019, 68(10): 106102. doi: 10.7498/aps.68.20182255
[9]	Wang Guan-Shi, Lin Yan-Ming, Zhao Ya-Li, Jiang Zhen-Yi, Zhang Xiao-Dong. Electronic and optical performances of (Cu, N) codoped TiO₂/MoS₂ heterostructure photocatalyst: Hybrid DFT (HSE06) study. Acta Physica Sinica, 2018, 67(23): 233101. doi: 10.7498/aps.67.20181520
[10]	Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren. Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki silicon. Acta Physica Sinica, 2015, 64(9): 096105. doi: 10.7498/aps.64.096105
[11]	Liu Hai-Yun, Liu Xiang-Lian, Tian Ding-Qi, Du Zheng-Liang, Cui Jiao-Lin. Acoustic charge transport behaviors of sulfur-doped wide gap Ga2Te3-based semiconductors. Acta Physica Sinica, 2015, 64(19): 197201. doi: 10.7498/aps.64.197201
[12]	Cao Yong-Jun, Tan Wei, Liu Yan. Coupling characteristics of point defect modes in two-dimensional magnonic crystals. Acta Physica Sinica, 2012, 61(11): 117501. doi: 10.7498/aps.61.117501
[13]	Hu Xiao-Hui, Xu Jun-Min, Sun Li-Tao. Research of electronic and magnetic properties on gold doped zigzag graphene nanoribbons. Acta Physica Sinica, 2012, 61(4): 047106. doi: 10.7498/aps.61.047106
[14]	Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica, 2012, 61(23): 236102. doi: 10.7498/aps.61.236102
[15]	Wei Qi, Cheng Ying, Liu Xiao-Jun. The influence of point defect array on directional emission of phononic crystal waveguide. Acta Physica Sinica, 2011, 60(12): 124301. doi: 10.7498/aps.60.124301
[16]	Wu Hong-Li, Zhao Xin-Qing, Gong Sheng-Kai. Effect of Nb on electronic structure of NiTi intermetallic compound: A first-principles study. Acta Physica Sinica, 2010, 59(1): 515-520. doi: 10.7498/aps.59.515
[17]	Hu Wang-Yu, Yang Jian-Yu, Ao Bing-Yun, Wang Xiao-Lin, Chen Pi-Heng, Shi Peng. Energy calculation of point defects in plutonium by embedded atom method. Acta Physica Sinica, 2010, 59(7): 4818-4825. doi: 10.7498/aps.59.4818
[18]	Yi Chen-Hong, Mu Qing-Sun, Miao Tian-De. The DEM simulation for two-dimension granular system with point defects. Acta Physica Sinica, 2008, 57(6): 3636-3640. doi: 10.7498/aps.57.3636
[19]	Ma Xin-Guo, Jiang Jian-Jun, Liang Pei. Theoretical study of native point defects on anatase TiO2 (101) surface. Acta Physica Sinica, 2008, 57(5): 3120-3125. doi: 10.7498/aps.57.3120
[20]	Hu Xiao-Jun, Li Rong-Bin, Shen He-Sheng, He Xian-Chang, Deng Wen, Luo Li-Xiong. Investigation of defect properties in doped diamond films. Acta Physica Sinica, 2004, 53(6): 2014-2018. doi: 10.7498/aps.53.2014

Catalog

Vol. 68, Issue 16 - 2019-08-20

Metrics

Abstract views: 13555
PDF Downloads: 306
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板