Atmospheric neutron single event effect in 65 nm microcontroller units by using CSNS-BL09

Hu Zhi-Liang; Yang Wei-Tao; Li Yong-Hong; Li Yang; He Chao-Hui; Wang Song-Lin; Zhou Bin; Yu Quan-Zhi; He Huan; Xie Fei; Bai Yu-Rong; Liang Tian-Jiao

doi:10.7498/aps.68.20191196

Abstract

The 65 nm-microcontroller units (MCUs) are being widely used in critical terrestrial tests, and the risk from atmospheric neutron becomes more and more serious. The spallation neutron source contains broad energy spectrum, which is different from the mono-energetic neutron sources, and is the most ideal irradiation source for atmospheric neutron single event effect (SEE). Benefiting from China Spallation Neutron Source (CSNS), the atmospheric neutron SEE in 65 nm-MCUs is tested for the first time at the CSNS 9^th beam line in China. The beam line is locatedin the 46° direction along the proton hitting the target, and the neutron spectrum is achieved to range from meV to 1.6 GeV. The test is conducted in two conditions in order to investigate the influence of thermal neutron. One is that the thermal neutrons are shielded with a 2-mm-thick cadmium slat at the beam ejection hole, and the other is not. The detected effects are single bit upset (SBU) events. 16 SBU events are detected when 5.3363 × 10¹⁷ protons hit the tungsten target without the thermal neutron, and 63 SBU events are recorded in the condition of 7.2131 × 10¹⁷ protons striking the target and thermal neutrons included. Comparing with the high energy neutron (>1 MeV), the SBU events caused by thermal neutron contribute about 65% of the number of total upset events. The test results preliminarily illustrate that the thermal neutrons dominate the 65 nm MCU reliability.

Keywords:

Authors and contacts

1.
School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China
2.
Spallation Neutron Source Science Center, Dongguan 523803, China
3.
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
4.
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Corresponding author: Li Yong-Hong, yonghongli@mail.xjtu.edu.cn ; Liang Tian-Jiao, tjliang@ihep.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11575138, 11835006, 11690040, 11690043, 11705216) and the Science and Technology Project of Guangdong Province, China (Grant Nos. 2017B090901068, 20170921)

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References

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Cited By

图 1 半导体中各核素的中子反应截面　(a)与B, Si的同位素的反应截面, 对应中子能量范围10^–11−1 MeV; (b)与¹⁴N, ¹⁶O, ²⁷Al, ²⁸Si, ¹⁸⁴W的反应截面, 对应中子能量范围1−150 MeV

Figure 1. Cross sections of different energy neutrons interacting with various nuclear atoms in semiconductor: (a) Cross sections of B and Si isotopes, the neutron energy interval is 10^–11−1 MeV; (b) cross sections of ¹⁴N, ¹⁶O, ²⁷Al, ²⁸Si and ¹⁸⁴W, the neutron energy interval is 1−150 MeV.

DownLoad: Full-Size Img PowerPoint

图 2 实验束线中子能谱

Figure 2. Neutron spectrum of the experiments.

DownLoad: Full-Size Img PowerPoint

图 3 65 nm MCU散裂中子辐照测试现场图　(a) DUT与出射孔相对位置图; (b)含2 mm厚镉屏蔽体测试现场图; (c)无镉屏蔽测试现场图

Figure 3. 65 nm MCU neutron test site: (a) The device under test and the 2 cm ejection hole; (b) with 2 mm cadmium shielding; (c) without cadmium shielding.

DownLoad: Full-Size Img PowerPoint

图 4 热中子与¹⁰B反应产生次级粒子在不同能量下的LET与硅中射程

Figure 4. The LET values and ranges of secondary particles from thermal neutrons interacting with ¹⁰B.

DownLoad: Full-Size Img PowerPoint

图 5 65 nm MCU内部热中子与¹⁰B反应次级粒子沉积能量示意图

Figure 5. The sketch of thermal neutron interacting with ¹⁰B in 65 nm MCU.

DownLoad: Full-Size Img PowerPoint

表 1 两组辐照下的实验数据

Table 1. The experiment data in two irradiations.

物理量		测试组	对照组
物理量		实验值	实验值	推导值
SBU次数		16	63	46
总质子数/p		5.3363 × 10¹⁷	7.2131 × 10¹⁷	5.3363 × 10¹⁷
中子注量/n·cm^–2	镉上中子	7.6997 × 10¹⁰	1.0703 × 10¹¹	7.9182 × 10¹⁰
中子注量/n·cm^–2	热中子	1.2585 × 10⁸	1.0062 × 10¹⁰	7.4440 × 10⁹

DownLoad: CSV

[1]	蔡明辉, 韩建伟, 李小银, 李宏伟, 张振力 2009 物理学报 58 6659 Google Scholar Cai M H, Han J W, Li X Y, Li H W, Zhang Z L 2009 Acta Phys. Sin. 58 6659 Google Scholar
[2]	Leray J L 2007 Microelectron. Reliab. 47 1827 Google Scholar
[3]	Austin L, Saar D, Joseph J F, Carl C, Peter A 2005 IEEE Trans. Device Mater. Reliab. 5 317 Google Scholar
[4]	Baggio J, Lambert D, Ferlet-Cavrois V, Paillet P, Marcandella C, Duhamel O 2007 IEEE Trans. Nucl. Sci. 54 2149 Google Scholar
[5]	Lei Z F, Zhang Z G, En Y F, Huang Y 2018 Chin. Phys. B 27 066105 Google Scholar
[6]	Tiva^TM TM4 C1294 NCPDT. Microcontroller DATA SHEET
[7]	陈达, 贾文宝 2015 应用中子物理学 (北京: 科学出版社) 第44页 Chen D, Jia W B 2015 Applied Neutron Physics (Beijing: Science Press) p44 (in Chinese)
[8]	张紫霞, 魏志勇, 方美华, 杨永常, 陈国云 2009 装备环境工程 6 5 Google Scholar Zhang Z X, Wei Z Y, Fang M H, Yang Y C, Cheng G Y 2009 Eq. Environ. Eng. 6 5 Google Scholar
[9]	杨善潮, 齐超, 刘岩, 郭晓强, 金晓明, 陈伟, 白小燕, 林东生, 王桂珍 2015 强激光与粒子束 27 4 Yang S C, Qi C, Liu Y, Guo X Q, Jin X M, Chen W, Bai X Y, Lin D S, Wang G Z 2015 High Pow. Las. Part. Beam 27 4
[10]	Brookhaven National Laboratory, National Nulcear Data Center (NNDC), Evaluated Nuclear Data File (ENDF): https://www.nndc.bnl.gov/exfor/endf00.jsp[2019-5-16]
[11]	戴春娟, 刘希琴, 刘子利, 刘伯路 2013 物理学报 62 152801 Google Scholar Dai C J, Liu X Q, Liu Z L, Liu B L 2013 Acta Phys. Sin. 62 152801 Google Scholar
[12]	Kobayashi H, Kawamotom N, Kase J, Shiraish K 2009 IEEE International Reliability Physics Symposium Montreal, QC, Canada, April 26−30, 2009 p206
[13]	Autran J L, Serre S, Semikh S, Munteanu D, Gasiot G, Roche P 2012 IEEE Trans. Nucl. Sci. 59 2658 Google Scholar
[14]	Clive D, Alex H, Karen F, Adam F, Peter T 2006 IEEE Trans. Nucl. Sci. 53 3596 Google Scholar
[15]	陈冬梅, 孙旭朋, 钟征宇, 封国强, 白桦, 阳辉, 底桐 2018 航空科学技术 29 67 Chen D M, Sun X P, Zhong Z Y, Feng G Q, Bai H, Yang H, Di T 2018 Aeronau. Sci. Tech. 29 67
[16]	JEDEC 2006 Measurement and Reporting of Alpha Particles and Terrestrial Cosmic RayInduced Soft Errors in Semiconductor Devices: JESD89 A, JEDEC STANDARD, JEDEC Solid State Technology Association
[17]	Yang W T, Li Y, Li Y H, Hu Z L, Xie F, He C H, Wang S L, Zhou B, He H, Waseem K, Liang T J 2019 Microelectron. Reliab. 99 119 Google Scholar
[18]	IEC 62396-2 Process Management for Avionics—Atmospheric Radiation Effects Part 2: Guidelines for Single Event Effects Testing for Avionics Systems. IEC 2012
[19]	于全芝, 殷雯, 梁天骄 2011 物理学报 60 052501 Google Scholar Yu Q Z, Yin W, Liang T J 2011 Acta Phys. Sin. 60 052501 Google Scholar
[20]	沈飞, 梁泰然, 殷雯, 于全芝, 左太森, 姚泽恩, 朱涛, 梁天骄 2014 物理学报 63 152801 Google Scholar Shen F, Liang T R, Yin W, Yu Q Z, Zuo T S, Yao Z E, Zhu T, Liang T J 2014 Acta Phys. Sin. 63 152801 Google Scholar
[21]	王勋, 张凤祁, 陈伟, 郭晓强, 丁李利, 罗尹虹 2019 物理学报 68 052901 Google Scholar Wang X, Zhang F Q, Chen W, Guo X Q, Ding L L, Luo Y H 2019 Acta Phys. Sin. 68 052901 Google Scholar
[22]	Yang W T, Du X C, He C H, Shi S T, Cai L, Hui N, Guo G 2018 IEEE Trans. Nucl. Sci. 65 545 Google Scholar
[23]	Cecile W, Sabrine H, Nicolas G, Jaime S, Jerome B, Florent M, Maria M 2018 IEEE Trans. Nucl. Sci. 65 1851 Google Scholar
[24]	Wen S J, Pai S Y, Wong R, Romain M, Tam N 2010 IEEE International Integrated Reliability Workshop Final Report Fallen Leaf, CA, USA, Oct. 17−21, 2010 p31
[25]	田永顺, 胡志良, 童剑飞, 陈俊阳, 彭向阳, 梁天骄 2018 物理学报 67 142801 Google Scholar Tian Y S, Hu Z L, Tong J F, Chen J Y, Peng X Y, Liang T J 2018 Acta Phys. Sin. 67 142801 Google Scholar
[26]	SRIM 2013 Particle Interactions with Matter [Online]. Available: http://www.srim.org/[2019-5-4]
[27]	Muhammad S, Chechenin N. G, Frank S, Usman A, Muhammad U, Zhu M, Khan 2017 Microelectron. Reliab. 78 11 Google Scholar

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Vol. 68, Issue 23 - 2019-12-05

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