Research progress of spin-orbit torques based on two-dimensional materials

He Cong-Li; Xu Hong-Jun; Tang Jian; Wang Xiao; Wei Jin-Wu; Shen Shi-Peng; Chen Qing-Qiang; Shao Qi-Ming; Yu Guo-Qiang; Zhang Guang-Yu; Wang Shou-Guo

doi:10.7498/aps.70.20210004

Abstract

The spin-orbit torque generated by charge current in a strong spin-orbit coupling material provides a fast and efficient way to manipulate the magnetic moment in adjacent magnetic layers, which is expected to be used for developing low-power, high-performance spintronic devices. Two-dimensional materials have attracted great attention, for example, they have abundant species, a variety of crystal structures and symmetries, good adjustability of spin-orbit coupling strength and conductivity, and good ability to overcome the lattice mismatch to form high-quality heterojunctions, thereby providing a unique platform for studying the spin-orbit torques. This paper covers the latest research progress of spin-orbital torques in two-dimensional materials and their heterostructures, including their generations, characteristics, and magnetization manipulations in the heterostructures based on non-magnetic two-dimensional materials (such as MoS₂, WSe₂, WS₂, WTe₂, TaTe₂, MoTe₂, NbSe₂, PtTe₂, TaS₂, etc.) and magnetic two-dimensional materials (such as Fe₃GeTe₂, Cr₂Ge₂Te₆, etc.). Finally, some problems remaining to be solved and challenges are pointed out, and the possible research directions and potential applications of two-dimensional material spin-orbit torque are also proposed.

Keywords:

Authors and contacts

1.
Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
2.
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
3.
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong 999077, China

Corresponding author: Wang Shou-Guo, sgwang@bnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51901025, 60573172, 51625101), the Key Program of the Natural Science Foundation of Beijing, China (Grant Nos. Z190007, Z190009), the Fundamental Research Funds for the Central Universities, China (Grant No. 310421101), and the Hong Kong Research Grants Council, China (Grant No. ECS26200520)

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图 1 MoS₂/Py异质结中ST-FMR信号的对称(a)和反对称(b)振幅随外加磁场与平面夹角θ的依赖关系(插图为基于MoS₂/Py异质结的ST-FMR器件光学显微镜图)^[59]; (c) MX₂/CoFeB 异质结的SOT测量装置示意图; (d) 二次谐波方法测得二阶霍尔电阻与φ的函数关系, 外加磁场为100 Oe (1 Oe = 10³/(4π) A/m)^[60]; (e) WS₂/Py双层器件几何结构示意图, 其中V_g通过SiO₂介质层施加; (f)V_g对Py和WS2/Py双层的转矩比$ {\tau }_{\rm{FL}}/{\tau }_{\rm{DL}} $调控特性^[61]

Figure 1. Out-of-plane (OOP) angular (the applied field is described by the polar angle) dependence of symmetric (a) and antisymmetric (b) components of the ST-FMR signal based on MoS₂/Py heterostructure (the inset is photo image of ST-FMR device)^[59]; (c) measurement setup of SOT measurements for the MX₂/CoFeB bilayer; (d) second-harmonic Hall resistance as a function of φ with an external magnetic field 100 Oe applied^[60]; (e) schematic of the WS₂/Py bilayer device geometry, where V_g was applied through the SiO₂ dielectric layer; (f) torque ratio $ {\tau }_{\rm{FL}}/{\tau }_{\rm{DL}} $ dependence of V_g for Py and WS₂/Py bilayer^[61].

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图 2 (a) WTe₂/Py异质结样品几何结构示意图; (b) WTe₂/Py器件的对称和反对称ST-FMR信号与面内磁场角度的依赖关系, 其中电流平行于a轴^[58]; (c) 由MOKE图像捕捉到的电流驱动磁矩翻转过程^[62]; (d) 自旋电导率随MoTe₂厚度的变化关系^[65]; (e) MoTe₂单斜1T′相的晶体结构和20层MoTe₂薄膜的能带结构^[70]; (f) PtTe₂/Py器件ST-FMR测量SOT效率ξ_SOT和自旋霍尔电导率$ {\sigma }_{\rm{s}} $的厚度依赖性; (g) PtTe₂/Au/CoTb结构和PtTe₂中电流产生的SOT的示意图; (h)在不同的面内磁场下, PtTe₂中电流产生的SOT驱动具有垂直磁各向异性的CoTb层磁矩翻转^[68]

Figure 2. (a) Schematic of the bilayer WTe₂/Py sample geometry; (b) symmetric and antisymmetric ST-FMR resonance components for a WTe₂ (5.5 nm)/Py (6 nm) device as a function of in-plane magnetic-field angle, with current applied parallel to the a-axis^[58]; (c) switching process captured by MOKE images^[62]; (d) spin conductivities as a function of the thickness of MoTe₂, where σ_S stands for the conventional damping-like torque, σ_B stands for the out-of-plane damping-like torque, and σ_T stands for the out-of-plane field-like torque^[65]; (e) crystal structure of the monoclinic 1T′ phase of MoTe₂ and band structure of a MoTe₂ slab with 20 monolayers^[70]; (f) thickness dependence of ξ_SOT and spin Hall conductivity σ_s of PtTe₂/Py measured by ST-FMR; (g) schematic layout for PtTe₂/Au/CoTb stack and the SOT generated by the majority of current flowing in PtTe₂; (h) current-induced switching of the CoTb layer by SOT from PtTe₂ under different in-plane field^[68].

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图 3 FGT/Pt双层器件的示意图(a)和SOT驱动的垂直磁矩翻转(b)^[88]; (c) SOT驱动FGT磁矩翻转有效翻转电流随施加面内磁场的变化^[89]; (d) 基于FGT的磁存储器件原理图及电流诱导的矫顽场大幅度降低, 从而降低写入电流密度^[90]; (e) 基于CGT/Ta异质结Hall器件的原理图和4 K温度下施加流过Ta的电流I_dc和平面内磁场H_x组合时的磁矩m_z相图^[91]; (f) FGT/WTe₂双层结构的原子示意图和不同电流密度下FGT/WTe₂ 霍尔条在10 K垂直磁场下的反常霍尔电阻^[92]

Figure 3. Schematic view (a) and SOT-driven perpendicular magnetization switching (b) in the FGT/Pt bilayer device^[88]; (c) current-induced magnetization switching of FGT and effective switching current as a function of applied in-plane magnetic field^[89]; (d) schematic of FGT-based magnetic memory device and the current-induced substantial reduction of the coercive field and then reduction of the write current^[90]; (e) schematic of a fabricated Hall bar device from a CGT/Ta heterostructure and phase diagram of m_z for applied combinations of I_dc and H_x at 4 K^[91]; (f) atomic schematic view of FGT/WTe₂ bilayer structure and anomalous Hall resistance of the FGT/WTe₂ Hall bar under a perpendicular magnetic field at 10 K with various current densities^[93].

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表 1 已报道的实验研究工作中TMD材料的晶体结构、制备方法、TMD/FM异质结中的SOT的表征方法以及自旋霍尔电导

Table 1. Crystal structure, preparation method, method for SOT measurement of the TMD/FM heterostructure, and spin Hall conductance of TMD materials in the previous studies.

TMD材料	空间群	制备方法	表征方法	自旋霍尔电导$/[{10}^{3}({\hbar /2{\rm{e}}} )$ (Ω·m)^–1]	文献
MoS₂	P6/mmc	CVD	SHH	$ {\sigma }_{\rm{A}}= $ 2.9	[60]
WSe₂	P6/mmc	CVD	SHH	$ {\sigma }_{\rm{A}}= $ 5.5	[60]
WS₂	P6/mmc	CVD	SHH	$ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $ observed	[61]
WTe₂	Pmn2₁	Exfoliation	ST-FMR/SHH	$ {\sigma }_{\rm{A}}= $ 9 ± 3, $ {\sigma }_{\rm{S}}= $ 8 ± 2, $ {\sigma }_{\rm{B}}= $ 3.6 ± 0.8	[58]
WTe₂	Pmn2₁	Exfoliation	ST-FMR/SHH	$ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $, ${\sigma }_{\rm B}$ observed	[62]
TaTe₂	C2/m	Exfoliation	ST-FMR/SHH	$ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $, ${\sigma }_{\rm B}$ observed	[64]
MoTe₂	P2₁/m	Exfoliation	ST-FMR	${\sigma }_{\rm{S} }=4.4 —8.0,$ ${\sigma }_{\rm{B} }=0.04—1.6,$ ${\sigma }_{\rm{T} }=0.026—1.0$	[65]
NbSe₂	P6₃/mmc	Exfoliation	ST-FMR	${\sigma }_{\rm{A} }=0— 40,$ ${\sigma }_{\rm{S} }=0— 13,$ ${\sigma }_{\rm{T} }=- 2—3.5$	[66]
PtTe₂	—	CVD	ST-FMR	${\sigma }_{\rm{S} }=0.20—1.6\times {10}^{2}$	[68]
TaS₂	—	Ion-beam sputtering	ST-FMR/SHH	$ {\sigma }_{\rm{S}}=14.9\times {10}^{2} $	[69]

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Vol. 70, Issue 12 - 2021-06-20

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