Spintronic devices based on topological and two-dimensional materials

Jiang Long-Xing; Li Qing-Chao; Zhang Xu; Li Jing-Feng; Zhang Jing; Chen Zu-Xin; Zeng Min; Wu Hao

doi:10.7498/aps.73.20231166

Abstract

Novel quantum materials such as topological materials, two-dimensional materials, create new opportunities for the spintronic devices. These materials can improve the charge-spin conversion efficiency, provide high-quality interface, and enhance the energy efficiency for spintronic devices. In addition, they have rich interactions and coupling effects, which provides a perfect platform for finding new physics and novel methods to control the spintronic properties. Many inspiring results have been reported regarding the research on topological materials and two-dimensional materials, especially the layered topological and two-dimensional magnetic materials, and their heterostructures. This paper reviews the recent achievements of these novel quantum materials on spintronic applications. Firstly the breakthroughs that topological materials have been made in spin-orbit torque devices is introduced, then two-dimensional magnetic materials and their performances in spintronic devices are presented, finally the research progress of topological materials/two-dimensional magnetic materials heterostructures is discussed. This review can help to get a comprehensive understanding of the development of these novel quantum materials in the field of spintronics and inspire new ideas of research on these novel materials.

Keywords:

Authors and contacts

1.
School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China
2.
Songshan Lake Materials Laboratory, Dongguan 523808, China
3.
School of Materials Science and Engineering, Beihang University, Beijing 100191, China

Corresponding author: Li Jing-Feng, lijingfeng@sslab.org.cn ; Wu Hao, wuhao1@sslab.org.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1402801), the National Natural Science Foundation of China (Grant No. 52271239), and the Basic and Applied Basic Research Foundation of Guangdong Province, China (Grant Nos. 2022B1515120058, 2022A1515110648).

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Cited By

图 1 (a) 拓扑绝缘体表面态中自旋动量锁定引起的螺旋自旋结构. 箭头表示每个波矢k中的自旋磁矩σ方向, 其方向与自旋角动量相反; (b) 沿+x方向施加电流, 将在电子的自旋和波矢处于正交方向的位置产生非平衡自旋积累^[29,30]

Figure 1. (a) Spiral spin structure caused by spin momentum locking in the surface state of topological insulator. Arrow indicates the direction of the spin magnetic moment σ of each wave vector k, which is opposite to the spin angular momentum; (b) applying current in the +x direction will generate non equilibrium spin accumulation at the position where the electron’s spin and wave vector are orthogonal^[29,30]

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图 2 (a) 通过栅压调控费米能级示意图, 净自旋极化电流/总电流比 (左纵轴) 与SOT有效场(右纵轴) 随栅压的演化^[57]; (b1) (Bi, Sb)₂Te₃中不同Sb浓度的费米能级位置示意图; (b2) 二维载流子密度n_2D和电阻率ρ_xx, 作为(Bi, Sb)₂Te₃中Sb浓度的函数; (b3) J_c和SOT有效场与Sb浓度的函数关系^[54]; (c) (Bi, Sb)₂Te₃中不同Sb浓度的费米能级位置示意图以及界面电荷-自旋转换效率与Sb成分的函数关系^[22]

Figure 2. (a) Schematic view of Fermi level regulation by gate voltage and corresponding evolution of net spin polarization current/total current ratio (left longitudinal axis) and SOT effective field (right longitudinal axis) with gate voltage^[57]; (b1) Fermi energy level positions of different Sb concentrations in (Bi, Sb)₂Te₃; (b2) two-dimensional carrier density n_2D and resistivity ρ_xx, as a function of Sb concentration in (Bi, Sb)₂Te₃; (b3) correlation between the effective fields of SOT and J_c and the concentration of Sb^[54]; (c) schematic diagram of Fermi energy level positions at different Sb concentrations in (Bi, Sb)₂Te₃, and correlation between interface charge spin conversion efficiency and Sb concentration^[22].

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图 3 (a) Cr₂Ge₂Te₆侧观测到的磁斯格明子; (b) Fe₃GeTe₂侧观测到的磁斯格明子^[70]; (c) 双层CrI₃磁序的电切换, 插图描述了不同磁场和电场作用下磁状态^[71]; (d) 三层Fe₃GeTe₂中, 以栅压和温度为函数的磁相图^[67]; (e) Fe₃GeTe₂的透视图(石板蓝色和蓝色球分别代表Fe³⁺和Fe²⁺; 虚线箭头表示铁原子间的自旋交换耦合)^[74]

Figure 3. (a) Skyrmion lattice observed on the Cr₂Ge₂Te₆ side; (b) skyrmion lattice observed on the Fe₃GeTe₂ side^[70]; (c) electrical switching of the magnetic order in bilayer CrI₃, and the insets depict the magnetic states under different magnetic and electric fields^[71]; (d) phase diagram of the trilayer Fe₃GeTe₂ sample as the gate voltage and temperature are varied^[67]; (e) perspective view of Fe₃GeTe₂ (The slate-blue and blue balls represent the Fe³⁺ and Fe²⁺; Dashed arrows indicate spin exchange coupling between Fe atoms)^[74].

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图 4 (a) 双层CrI₃的磁状态示意图; (b) 二维自旋过滤磁性隧道结示意图^[76]; (c) Fe₃GeTe₂/hBN/Fe₃GeTe₂的磁性隧道结示意图^[78]; (d) Fe₃GeTe₃/Pt双层结构示意图; (e) Fe₃GeTe₂/Pt双层器件中SOT驱动的垂直磁化翻转^[83]

Figure 4. (a) Schematic view of magnetic states in bilayer CrI₃; (b) schematic view of 2D spin-filter magnetic tunnel junction^[76]; (c) schematic view of magnetic tunnel junction for Fe₃GeTe₂/hBN/Fe₃GeTe₂^[78]; (d) schematic view of the bilayer structure for Fe₃GeTe₂/Pt; (e) SOT-driven perpendicular magnetization switching in the Fe₃GeTe₂/Pt bilayer device^[83]

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图 5 (a) 不同 Sb 组分下的 SOT 驱动磁矩翻转的电流密度^[89]; (b) Sb 组分与 SOT 驱动磁矩翻转的电流密度依赖关系^[89]; (c), (d) 30 mT面内场辅助下的SOT 驱动的磁矩翻转^[92]

Figure 5. (a) Current density of SOT switching with different Sb component^[89]; (b) dependence of SOT switching current density on Sb composition^[89]; (c), (d) 30 mT in-plane field assisted SOT switching^[92].

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图 6 (a) 飞秒激光脉冲激发和Fe₃GeTe₂/Bi₂Te₃异质结构太赫兹辐射示意图^[94]; (b) 在太赫兹时域波形图中, Fe₃GeTe₂/Bi₂Te₃异质结构的太赫兹波明显增强^[94]; (c) 图6(b)的傅里叶变换图谱; (d) Fe₃GeTe₂/Bi₂Te₃异质结构的太赫兹波极性翻转^[94]

Figure 6. (a) Femtosecond laser pulse excitation and terahertz radiation schematic diagram of Fe₃GeTe₂/Bi₂Te₃ heterostructure^[94]; (b) in typical THz temporal waveforms, the terahertz wave of the Fe₃GeTe₂/Bi₂Te₃ heterostructure is significantly enhanced^[94]; (c) Fourier transform spectrum of Fig. 6(b); (d) terahertz polarity reversal of Fe₃GeTe₂/Bi₂Te₃ heterostructures^[94].

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图 7 (a) 反铁磁状态控制的大非互易电流^[88]; (b) ML-WTe₂/CGT 异质结构器件的光学图像^[97]; (c) 不同测试通道的反常能斯特电压与磁场的依赖关系^[97]; (d) 归一化后的反常能斯特电压与温度的依赖关系^[97]

Figure 7. (a) Large nonreciprocal current controlled by the antiferromagnetic state^[88]; (b) optical image of the ML-WTe₂/CGT heterostructure device^[97]; (c) dependence of abnormal Nernst voltage on magnetic field in different test channels^[97]; (d) dependence of normalized anomalous Nernst voltage on temperature^[97].

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表 1 不同异质结构的自旋霍尔角 (θ_SH), 临界翻转电流密度 (J_c)

Table 1. Spin Hall angles (θ_SH) and critical switching current density (J_c) of different heterostructures.

异质结构	θ_SH	J_c/(10⁴ A⋅cm^–2)	生长方法	测试方法
(CrBiSb)₂Te₃/(BiSb)₂Te₃^[58]	140—425 (1.9 K)	8.9	MBE	S-H
Bi₂Se₃/CoFeB^[47]	1—1.75	60.0	MBE	S-F
Bi₂Se₃/Ag/CoFeB^[48]	0.1—0.5	58.0	MBE	S-F
(BiSb)₂Te₃/GdFeCo^[53]	3.0	12.0	MBE	S-H
(BiSb)₂Te₃/Ti/CoFeB^[54]	2.5	52.0	MBE	S-H
BiSb/MnGa^[51]	52	150.0	MBE	L-S
(BiSb)₂Te₃/Mo/CoFeB^[50]	2.66	30.0	MBE	S-H
(BiSb)₂Te₃/Ti/CoFeB^[64]	1.16	10.0	MBE	S-H
BiSe/CoFeB^[52]	18.62	23.0	Sputter	S-H
Bi₂Se₃/NiFe^[60]	2.18	—	Sputter	S-H
Pt/Co/Bi₂Se₃^[63]	0.35	350.0	Sputter	S-H
Pt/Co/(BiSb)₂Te₃^[62]	0.77	83.0	Sputter	S-H

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