Characteristics of extreme ultraviolet emission from Gd plasma produced by dual pulse laser

Xie Zhuo; Wen Zhi-Lin; Si Ming-Qi; Dou Yin-Ping; Song Xiao-Wei; Lin Jing-Quan

doi:10.7498/aps.71.20211450

Abstract

The extreme ultraviolet (EUV) lithography technology, which is required for high-end chip manufacturing, is the first of 35 “neck stuck” key core technologies that China is facing currently. The EUV source with high conversion efficiency is an important part of EUV lithography system. The experiment on dual-pulse irradiated Gd target is carried out to realize the stronger 6.7 nm EUV emission output. Firstly, we compute the contribution of transition arrays of the form 4p-4d and 4d-4f from their open 4d subshell in charge states Gd¹⁸⁺−Gd²⁷⁺, and transition arrays of the form 4d-4f from their open 4d subshell in charge states Gd¹⁴⁺−Gd¹⁷⁺ on the near 6.7 nm EUV source. Subsequently, the experimental results of the dual pulse laser irradiated Gd target show that the intensity of 6.7 nm peak EUV emission decreases first, then increases and drops again due to the plasma density decreasing gradually when the delay time between the pre-pulse and main-pulse increases from 0−500 ns. The strongest intensity of 6.7 nm peak EUV emission is generated when the delay time is 100 ns. At the same time, the spectrum efficiency is higher when the delay time is 100 ns, which is 33% higher than that of single pulse laser. In addition, the experimental results show that the half width of EUV spectrum produced by dual pulse in the delay between 10−500 ns is narrower than that of signal laser pulse due to the fact that the method of dual pulse can suppress the self-absorption effect. The half width is the narrowest when the delay is 30 ns, which is about 1/3 time of EUV spectrum width generated by a single pulse. At the same time, the narrowing of Gd EUV spectrum improves the spectral utilization efficiency near 6.7 nm wavelength (within 0.6% bandwidth).

Keywords:

Authors and contacts

1.
School of Physics, Changchun University of Science and Technology, Changchun 130022, China
2.
Key Laboratory of Ultrafast and Extreme Ultraviolet Optics of Jilin Province, Changchun University of Science and Technology, Changchun 130022, China

Corresponding author: Dou Yin-Ping, douzi714@126.com ; Lin Jing-Quan, linjingquan@cust.edu.cn

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 62005021, 62105040), the National Natural Science Foundation of China (Grant No. 62175018), the Natural Science Foundation of Chongqing, China (Grant No. cstc2021jcyj-msxmX0735), the Key R&D Program of Scientific and Technological Development Plan of Jilin Province, China (Grant No. 20200401052GX), the Department of Education of Jilin Province, China (Grant No. JJKH20210799KJ), and the Key Laboratory of Ultrafast and Extreme Ultraviolet Optics of Jilin Province, China (Grant No. YDZJ202102CXJD028).

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References

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[30]	Churilov S S, Kildiyarova R R, Ryabtsev A N, Sadovsky S V 2009 Phys. Scr. 80 045303 Google Scholar
[31]	Li B W, Dunne P, Higashiguchi T, Otsuka T, Yugami N, Jiang W H, Endo A, O'Sullivan G 2011 Appl. Phys. Lett. 99 231502 Google Scholar
[32]	National Institute of Standards and Technology https://nlte.nist.gov/FLY/ [2018-8]
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Cited By

图 1 双激光脉冲打靶形成Gd等离子体的极紫外光谱辐射实验装置图

Figure 1. Experimental setup for the characteristics of EUV emission from Gd plasma produced by dual laser.

DownLoad: Full-Size Img PowerPoint

图 2 Gd靶激光等离子体极紫外光辐射实验曲线(黑色)和理论计算Gd不同离子价态自发辐射速率与波长之间的关系(红色). 图中的14⁺—27⁺表示Gd离子阶数. Gd¹⁸⁺—Gd²⁷⁺离子的跃迁类型为Δn = 0, n = 4, 4p⁶4d^m-4p⁵4d^m+1 + 4d^m–14f (m = 1—10), Gd¹⁴⁺—Gd¹⁷⁺离子的跃迁类型为Δn = 0, n = 4, 4d¹⁰4f^m-4d⁹4f^m+1(m = 1—4)和Δn = 1, n = 4, n = 5, 4d¹⁰4f-4d⁹4f^m–15d + 4d⁹4f^m–15g (m = 1—4)

Figure 2. Experimental waveform of laser produced Gd plasma EUV emission (black line), and the transition probabilities of Gd¹⁴⁺−Gd²⁷⁺ computed with the Cowan code including the effects of CI (red line). The transition type of Gd¹⁸⁺− Gd²⁷⁺ is Δn = 0, n = 4, 4p⁶4d^m-4p⁵4d^m+1 + 4d^m–14f (m = 1−10). And the transition type of Gd¹⁴⁺− Gd¹⁷⁺ is Δn = 0, n = 4, 4d¹⁰4f^m-4d⁹4f^m+1 (m = 1−4), and Δn = 1, n = 4, n = 5, 4d¹⁰4f-4d⁹4f^m–15d + 4d⁹4f^m–15g (m = 1−4).

DownLoad: Full-Size Img PowerPoint

图 3 不同延时下, (a) 6.7 nm极紫外光辐射曲线以及(b) 6.7 nm峰值附近处辐射强度. 主脉冲激光功率为2 × 10¹² W/cm²、预脉冲激光功率为2.2 × 10¹⁰ W/cm²

Figure 3. (a) The impendence of 6.7 nm EUV spectrum radiation and (b) the radiation intensity of the 6.7 nm peak on the different delay time with the main pulse laser density of 2 × 10¹² W/cm² and pre-pulse laser density of 2.2 × 10¹⁰ W/cm².

DownLoad: Full-Size Img PowerPoint

图 4 延时为30, 100 ns和主脉冲三种情况下的极紫外光谱宽度对比图

Figure 4. Comparisons of EUV spectral widths under the delay of 30, 100 ns and main pulse.

DownLoad: Full-Size Img PowerPoint

图 5 在电子密度为10¹⁹ (a)和10²⁰ cm^–3 (b)条件下, 离子丰度与电子温度之间的关系, 图中的14⁺—25⁺表示Gd 离子阶数

Figure 5. Ionic populations of Gd plasma as a function of T_e under the electron density of 10¹⁹ (a) and 10²⁰ cm^–3 (b). The numbers in the figure are represented the ion stages of Gd plasma.

DownLoad: Full-Size Img PowerPoint

图 6 固定电子温度为100 eV条件下, Gd¹⁸⁺离子丰度与电子密度之间的关系

Figure 6. The Gd¹⁸⁺ ion population dependence of electron density under the electron temperature of 100 eV.

DownLoad: Full-Size Img PowerPoint

图 7 不同延时下, 波长6.7 nm左右的0.6%带内的光谱效率

Figure 7. Spectral efficiency of the 0.6% in band radiation around 6.7 nm to the total radiation between 5−10 nm under the main pulse and dual pulse with different delay time.

DownLoad: Full-Size Img PowerPoint

[1]	Schmitz C, Wilson D, Rudolf D, Wiemann C, Plucinski L, Riess S, Schuck M, Hardtdegen H, Schneider C M, Tautz F S, Juschkin L 2016 Appl. Phys. Lett. 108 234101 Google Scholar
[2]	Barkusky F, Bayer A, Döring S, Flöter B, Großmann P, Peth Cn, Reese M, Mann K 2010 The International Society for Optical Engineering. Prague, Czech Republic April 20, 2009 p7361
[3]	Wagner C, Harned N 2010 Nat. Photonics 4 24 Google Scholar
[4]	Torretti F, Sheil J, Schupp R, Basko M M, Bayraktar M, Meijer R A, Witte S, Ubachs W, Hoekstra R, Versolato O O, Neukirch A J, Colgan J 2020 Nat. Commun. 11 1
[5]	Torretti F, Liu F, Bayraktar M, Scheers J, Bouza Z, Ubachs W, Hoekstra R, Versolato O O 2019 J. Phys. D: Appl. Phys. 53 055204 Google Scholar
[6]	Versolato O O 2019 Plasma Sources Sci. Technol. 28 083001 Google Scholar
[7]	Huang Q S, Medvedev V, Kruijs R V D, Yakshin A, Louis E, Bijkerk F 2017 Appl. Phys. Rev. 4 011104 Google Scholar
[8]	Wu B Q, Kumar A 2007 J. Vac. Sci. Technol., B 25 1743 Google Scholar
[9]	Sasaki A, Nishihara K, Sunahara A, Furukawa H, Nishikawa T, Koike F 2010 Appl. Phys. Lett. 97 231501 Google Scholar
[10]	Wezyk A V, Andrianov K, Wilhein T, Bergmann K 2019 J. Phys. D: Appl. Phys. 52 505202 Google Scholar
[11]	Chkhalo N I, Künstner S, Polkovnikov V N, Salashchenko N N, Schäfers F, Starikov S D 2013 Appl. Phys. Lett. 102 011602 Google Scholar
[12]	Yoshida K, Fujioka S, Higashiguchi T, Ugomori T, Tanaka N, Kawasaki M, Suzuki Y, Suzuki C, Tomita K, Hirose R, Eshima Takeo, Ohashi H, Nishikino M, Scally E, Nshimura H, Azechi H, O'Sullivan G 2016 J. Phys. Conf. Ser. 688 012046 Google Scholar
[13]	Yoshida K, Fujioka S, Higashiguchi T, Ugomori T, Tanaka N, Ohashi H, Kawasaki M, Suzuki Y, Suzuki C, Tomita K, Hirose R, Ejima T, Nishikino M, Sunahara A, Scally E, Li B W, Yanagida T, Nishimura H, Azechi H, O'Sullivan G 2014 Appl. Phys. Express. 7 086202 Google Scholar
[14]	Cummins T, Otsuka T, Yugami N, Jiang W H, Endo A, Li B W, O'Gorman C, Dunne P, Sokell E, O'Sullivan G, Higashiguchi T 2012 Appl. Phys. Lett. 100 061118 Google Scholar
[15]	Yin L, Wang H C, Reagan B A, Baumgarten C, Gullikson E, Berrill M, Shlyaptsev V N, Rocca J J 2016 Phys. Rev. Appl. 6 034009 Google Scholar
[16]	Xu Q, Tian H, Zhao Y, Wang Q 2019 Symmetry 11 658 Google Scholar
[17]	Wang J W, Wang X B, Zuo D L, Zakharov V S 2021 Opt. Laser Technol. 138 106904 Google Scholar
[18]	Fujioka S, Nishimura H, Nishihara K, Sasaki A, Sunahara A, Okuno T, Ueda N, Ando T, Tao Y Z, Shimada Y, Hashimoto K, Yamaura M, Shigemori K, Nakai M, Nagai K, Norimatsu T, Nishikawa T, Miyanaga N, Izawa Y, Mima K 2005 Phys. Rev. Lett. 95 235004 Google Scholar
[19]	Higashiguchi T, Li B W, Suzuki Y, Kawasaki M, Ohashi H, Torii S, Nakamura D, Takahashi A, Okada T, Jiang W H, Miura T, Endo A, Dunne P, O'Sullivan G, Makimura T 2013 Opt. Express 21 031837 Google Scholar
[20]	Higashiguchi T, Otsuka T, Yugami N, Jiang W H, Endo A, Li B W, Kilbane D, Dunne P, O'Sullivan G 2011 Appl. Phys. Lett. 99 191502 Google Scholar
[21]	Freeman J R, Harilal S S, Hassanein A 2011 J. Appl. Phys. 110 083303 Google Scholar
[22]	Higashiguchi T, Dojyo N, Hamada M, Sasaki W, Kubodera S 2006 Appl. Phys. Lett. 88 201503 Google Scholar
[23]	Freeman J R, Harilal S S, Hassanein A, Rice B 2013 Appl. Phys. A 110 853 Google Scholar
[24]	Dou Y P, Sun C K, Liu C Z, Gao J, Hao Z Q, Lin J Q 2014 Chin. Phys. B 23 075202 Google Scholar
[25]	Kilbane D, O'Sullivan G 2010 J. Appl. Phys. 108 104905 Google Scholar
[26]	Cowan R D 1981 The Theory of Atomic Structure and Spectra (University of California Press) pp619–625
[27]	Aota T, Tomie T 2005 Phys. Rev. Lett. 94 015004 Google Scholar
[28]	Hassanein A, Sizyuk T, Sizyuk V, Harilal S S 2011 J. Micro/Nanolithgr. MEMS MOEMS 10 033002 Google Scholar
[29]	Higashiguchi T, Kawasaki K, Sasaki W, Kubodera S 2006 Appl. Phys. Lett. 88 161502 Google Scholar
[30]	Churilov S S, Kildiyarova R R, Ryabtsev A N, Sadovsky S V 2009 Phys. Scr. 80 045303 Google Scholar
[31]	Li B W, Dunne P, Higashiguchi T, Otsuka T, Yugami N, Jiang W H, Endo A, O'Sullivan G 2011 Appl. Phys. Lett. 99 231502 Google Scholar
[32]	National Institute of Standards and Technology https://nlte.nist.gov/FLY/ [2018-8]
[33]	Higashiguchi T, Yamaguchi M, Otsuka T, Nagata T, Ohashi H, Li B W, D'Arcy R, Dunne P, O'Sullivan G 2014 Rev. Sci. Instrum. 85 096102 Google Scholar
[34]	Favre A, Morel V, Bultel A, Godard G, Idlahcen S, Benyagoub A, Monnet I, Semerokc A, Dinescu Maria, Markelj S, Magaud P, Grisolia C 2021 Fusion. Eng. Des. 168 112364 Google Scholar
[35]	Beyene G A, Tobin I, Juschkin L, Hayden P, O'Sullivan G, Sokell E, Zakharov V S, Zakharov S V, O'Reilly F 2016 J. Phys. D: Appl. Phys. 49 225201 Google Scholar

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