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Magnetism and spin transport properties of two-dimensional magnetic semiconductor kagome lattice Nb3Cl8 monolayer

Fan Xiao-Zheng Li Yi-Lian Wu Yi Chen Jun-Cai Xu Guo-Liang An Yi-Peng

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Magnetism and spin transport properties of two-dimensional magnetic semiconductor kagome lattice Nb3Cl8 monolayer

Fan Xiao-Zheng, Li Yi-Lian, Wu Yi, Chen Jun-Cai, Xu Guo-Liang, An Yi-Peng
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  • Two-dimensional semiconductor materials with intrinsic magnetism have great application prospects in realizing spintronic devices with low power consumption, small size and high efficiency. Some two-dimensional materials with special lattice structures, such as kagome lattice crystals, are favored by researchers because of their novel properties in magnetism and electronic properties. Recently, a new two-dimensional magnetic semiconductor material Nb3Cl8 monolayer with kagome lattice structure was successfully prepared, which provides a new platform for exploring two-dimensional magnetic semiconductor devices with kagome structure. In this work, we study the electronic structure and magnetic anisotropy of Nb3Cl8 monolayer. We also further construct its p-n junction diode and study its spin transport properties by using density functional theory combined with non-equilibrium Green’s function method. The results show that the phonon spectrum of the Nb3Cl8 monolayer has no negative frequency, confirming its dynamic stability. The band gap of the spin-down state (1.157 eV) is significantly larger than that of the spin-up state (0.639 eV). The magnetic moment of the Nb3Cl8 monolayer is 0.997 μB, and its easy magnetization axis is in the plane and along the x-axis direction based on its energy of magnetic anisotropy. The Nb atoms make the main contribution to the magnetic anisotropy. When the strain is applied, the band gap of the spin-down states will decrease, while the band gap of the spin-up state monotonically decreases from the negative (compress) to positive (tensile) strain. As the strain variable goes from –6% to 6%, the contribution of Nb atoms to the total magnetic moment gradually increases. Moreover, strain causes the easy magnetization axis of the Nb3Cl8 monolayer to flip vertically from in-plane to out-plane. The designed p-n junction diode nanodevice based on Nb3Cl8 monolayer exhibits an obvious rectification effect. In addition, the current in the spin-up state is larger than that in the spin-down state, exhibiting a spin-polarized transport behavior. Moreover, a negative differential resistance (NDR) phenomenon is also observed, which could be used in the NDR devices. These results demonstrate that the Nb3Cl8 monolayer material has great potential applications in the next-generation high-performance spintronic devices, and further experimental verification and exploration of this material and related two-dimensional materials are needed.
      Corresponding author: An Yi-Peng, ypan@htu.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12274117), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 24IRTSTHN025), the Science Foundation for the Excellent Youth Scholars of Henan Province, China (Grant No. 202300410226), the Young Top-notch Talents Project of Henan Province, China (2021 year), the Key Scientific Project of Universities of Henan Province, China (Grant No. 22A140020), and the Henan Center for Outstanding Overseas Scientists, China (Grant No. GZS2023007).
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  • 图 1  (a) Nb3Cl8单层晶体结构的俯视图(上)和侧视图(下), x轴代表锯齿型方向; (b) 声子谱以及投影声子态密度; 自旋向上(c)和向下(d)状态的元素投影电子能带以及投影态密度; Γ点附近自旋向上(e)和向下(f)状态的导带与价带的三维视图以及在第一布里渊区的二维投影; 色卡显示了图(e)、图(f)中从低(红色)到高(紫色)的能量本征值; 费米能级(EF)设置在能量零点位置

    Figure 1.  (a) Top view (top) and side view (bottom) of Nb3Cl8 monolayer crystal structure, x axis refers to the zigzag irection; (b) phonon spectrum and phonon projected density of states; element-projected electronic band and density of states for the spin-up (c) and spin-down (d) states; 3D views for the spin-up (e) and spin-down (f) states of the conduction and valence bands around the Γ point, and 2D views in the first Brillouin zone projection. Color map shows the values for (e), (f) from low (red) to high (purple). the Fermi level (EF) is set at the energy zero position.

    图 2  (a) x-y平面内EMA随极角θϕ的变化; (b) y-z平面内EMA随极角θϕ的变化, 插图显示极坐标; (c) θ = 90°, ϕ = 90°(y轴方向)的EMA轨道投影; (d) θ = 90°, ϕ = 0°(x轴方向)的EMA轨道投影; y轴(θ = 90°, ϕ = 90°)和z轴(θ = 0°, ϕ = 90°)方向的能量设置为x-yy-z平面的零参考

    Figure 2.  (a) EMA variation with polar angles θ and ϕ in the x-y plane; (b) EMA variation with polar angles θ and ϕ in the y-z plane, inset shows polar coordinates; orbital projections of EMA corresponding to polar angles of (c) θ = 90°, ϕ = 90° (y axis direction) and (d) θ = 90°, ϕ = 0° (x axis direction). Energy of y axis (θ = 90°, ϕ = 90°) and z axis (θ = 0°, ϕ = 90°) directions are set as zero reference of the x-y and y-z plane.

    图 3  (a) Nb3Cl8单层自旋向上态与自旋向下态带隙随应力应变的变化; (b) Nb3Cl8单层能量变化量($ \Delta E $)和Nb原子对总磁矩的贡献($ {{{M_{{\mathrm{Nb}}}}} / {{M_{{\mathrm{Total}}}}}} $)随应力应变的变化

    Figure 3.  (a) Variation of the band gap with strain in the spin-up and spin-down states of Nb3Cl8 monolayer; (b) variation of the energy change ($ \Delta E $) and the contribution of Nb atoms to the total magnetic moment ($ {{{M_{{\mathrm{Nb}}}}} / {{M_{{\mathrm{Total}}}}}} $) with strain in the Nb3Cl8 monolayer.

    图 4  (a) Z型Nb3Cl8单层p-n结二极管示意图; (b) Z型Nb3Cl8单层p-n结二极管I-V曲线; (c) Z型Nb3Cl8单层p-n结二极管的微分电导(dI/dV)曲线; (d) Z型Nb3Cl8单层p-n结二极管整流比(RR)和极化比(PR)

    Figure 4.  (a) Schematic diagram of Z-type Nb3Cl8 monolayer p-n junction diode; (b) I-V curve of Z-type Nb3Cl8 monolayer p-n junction diode; (c) differential conductance (dI/dV) curve of Z-type Nb3Cl8 monolayer p-n junction diode; (d) rectification ratio (RR) and polarization ratio (PR) of Z-type Nb3Cl8 monolayer p-n junction diode.

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  • supplement 2023年72卷247503补充材料.pdf supplement
Metrics
  • Abstract views:  4155
  • PDF Downloads:  327
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Publishing process
  • Received Date:  18 July 2023
  • Accepted Date:  08 September 2023
  • Available Online:  01 December 2023
  • Published Online:  20 December 2023

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