Customizing two-dimensional heterojunction with novel luminescenct anisotropy using van der Waals engineering

WEN Ting; SU Ziluo; WANG Yalan; CAI Shuang; WU Jiaqi; QIN Jiaze; JIAO Chenyin; WANG Zenghui; ZHANG Zejuan; PEI Shenghai; XIA Juan

doi:10.7498/aps.74.20251120

Abstract

Luminescence and anisotropy in two-dimensional (2D) materials have important implications for both fundamental material physics and potential applications such as polarized light-emitting devices. However, many natural-occuring 2D materials typically exhibit either luminescence or anisotropy, but not both. In this work, we utilize van der Waals (vdW) engineering to construct a heterostructure (HS) with anisotropic luminescent properties, which is composed of isotropic monolayer (1L) MoS₂ (with strong intrinsic luminescence) and low-symmetry NbIrTe₄ (strong anisotropy without photoluminescence). Experimentally, we characterize the optical response of the HS by using angle-resolved PL spectroscopy. The results indicate that the intrinsic anisotropic potential field of NbIrTe₄ at the interface effectively breaks the in-plane isotropic symmetry of MoS₂, inducing a pronounced polarization-dependent emission of A and B excitons. The anisotropy ratio is enhanced to ~1.58, corresponding to a linear polarization degree of approximately 22%. This work provides new insights into 2D interfacial coupling and offers useful guidance for the design and engineering of next-generation high-performance, tunable polarized light-emitting devices.

Keywords:

Authors and contacts

1.
School of Electronic Information, Huzhou College, Huzhou 313000, China
2.
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054 China

Corresponding author: WANG Zenghui, zenghui.wang@uestc.edu.cn ; ZHANG Zejuan, zejuanzhang@uestc.edu.cn ; PEI Shenghai, shpei@uestc.edu.cn ; XIA Juan, juanxia@uestc.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. T2325007, 62450003, U21A20459, 62104029), the Zhejiang Provincial Natural Science Foundation of China (Grant No. ZCLQN25A0407), the Sichuan Provincial Natural Science Foundation for Distinguished Young Scholars, China (Grant No. 25NSFJQ0277), and the State Key Laboratory of Meta-stable Materials Science and Technology (Yanshan University), China (Grant No. 202504).

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References

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Cited By

图 1 实验装置示意图. 其激发光源为波长532 nm的线偏振激光, 通过旋转半波片调节激发光偏振方向, 实现角偏振PL测量. 激光束经100倍物镜聚焦于样品表面, 激发功率控制在0.1 mW以下, 以有效抑制光致加热效应. 插图为1L-MoS₂与NbIrTe₄薄片堆叠的异质结侧视图

Figure 1. Schematic diagram of the experimental setup. A linearly polarized laser with a wavelength of 532 nm serves as the excitation source, and a rotating half-wave plate is used to control the polarization angle for angle-resolved polarization-dependent PL measurements. The laser beam is focused onto the sample surface using a 100× objective lens, and the excitation power keep below 0.1 mW to effectively suppress photoinduced heating effects. Inset: side view of the crystal structure of 1L-MoS₂/NbIrTe₄ heterostructure.

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图 2 样品的基本结构与光学表征　(a), (b) 分别为MoS₂和NbIrTe₄的晶体结构示意图; (c), (d) 分别展示了1L-MoS₂与II类Weyl半金属NbIrTe₄的能带结构示意图, 突出其典型的电子态特征; (e) 1L-MoS₂/NbIrTe₄异质结的光学照片, 我们采用机械剥离法分别制备1L-MoS₂和NbIrTe₄薄片, 并通过干法转移技术依次将NbIrTe₄与1L-MoS₂转移至Si/SiO₂基底, 堆叠形成1L-MoS₂/NbIrTe₄异质结(Heterostructure, HS). 随后, 异质结构样品被放置于120 ℃的真空环境中退火6 h, 以增强界面接触与稳定性. 其中, 蓝色虚线标示1L-MoS₂区域, 红色点划线标示NbIrTe₄区域, 紫色实线标示异质结区域, 比例尺为5 μm; (f) 1L-MoS₂, 异质结和纯NbIrTe₄的PL光谱, 橙色与绿色包络曲线分别对应激子峰X_A与X_B

Figure 2. Structural and optical characterization of the samples. (a), (b) Crystal structures of MoS₂ and NbIrTe₄, respectively. (c), (d) Schematic band structures of monolayer MoS₂ and the type-II Weyl semimetal NbIrTe₄, highlighting their representative electronic features. (e) Optical image of the 1L-MoS₂/NbIrTe₄ heterostructure (HS). 1L-MoS₂ and NbIrTe₄ flakes are prepared separately via mechanical exfoliation. A dry-transfer technique is then used to sequentially transfer NbIrTe₄ and 1L-MoS₂ onto a Si/SiO₂ substrate, forming a stacked 1L-MoS₂/NbIrTe₄ HS. The HS sample is subsequently annealed in a vacuum environment at 120 ℃ for 6 h to enhance interfacial contact and structural stability. The white dashed outline indicates the region of monolayer MoS₂, the red dotted outline marks the NbIrTe₄ region, and the purple solid line outline indicates the region of heterostructure. Scale bar: 5 μm. (f) PL spectra of monolayer MoS₂, the 1L-MoS₂/NbIrTe₄ heterostructure and NbIrTe₄. The orange and green shaded areas correspond to the exciton X_A and X_B, respectively.

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图 3 1L-MoS₂与1L-MoS₂/NbIrTe₄异质结的角偏振PL光谱特性　(a) 1L-MoS₂在线性激发光平行(0°)和垂直(90°)于b轴时的PL光谱; (b) 1L-MoS₂中激子峰X_A(橙色)与X_B(绿色)的PL强度随偏振角变化的极坐标图, 圆点为实验测量值, 实线为拟合曲线; (c) 1L-MoS₂/NbIrTe₄异质结在激发光偏振方向平行(0°)和垂直于(270°)b轴时的PL光谱; (d) 异质结中激子峰X_A与X_B的PL强度角度依赖关系, 对应的极坐标图展示了其光学各向异性行为

Figure 3. Angle-resolved polarized PL spectra of monolayer MoS₂ and 1L-MoS₂/NbIrTe₄ heterostructure: (a) The PL spectra of 1L-MoS₂ with the linear excitation light is parallel and perpendicular to the b axis; (b) polar plots of the PL intensity of exciton X_A (purple) and X_B (green) in monolayer MoS₂, where the dots represent experimental data and the solid lines correspond to fitted curves; (c) the PL spectra of the 1L-MoS₂/NbIrTe₄ heterostructure with the linear excitation light is parallel and perpendicular to the b axis; (d) polar plots showing the angular dependence of PL intensity for excitons X_A and X_B in the heterostructure, indicating pronounced optical anisotropy.

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图 4 (a) 1L-MoS₂的面内晶格结构示意图及其面内晶格投影出的布里渊区; (b) 1L-MoS₂/NbIrTe₄异质结的层间耦合作用打破MoS₂晶格结构面内对称性及其晶格结构投影出的布里渊区示意图

Figure 4. (a) In-plane lattice of monolayer MoS₂ and corresponding Brillouin zone projected from in-plane lattice of monolayer MoS₂; (b) schematic diagram of the interlayer coupling regulation mechanism of 1L-MoS₂/NbIrTe₄ heterostructure and corresponding Brillouin zone projected from anisotropy MoS₂.

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[1]	Huang S, Wang C, Xie Y, Yu B, Yan H 2023 Photonics Insights 2 R03 Google Scholar
[2]	Wen T, Li J, Deng Q, Jiao C, Zhang M, Wu S, Lin L, Huang W, Xia J, Wang Z 2022 Small 18 2108028 Google Scholar
[3]	Qiu H, Yu Z, Zhao T, et al. 2024 Sci. China Inform. Sci. 67 160400 Google Scholar
[4]	Xu B, Zhu J K, Xiao F, Jiao C Y, Liang Y C, Wen T, Wu S, Zhang Z J, Lin L, Pei S H, Jia H, Chen Y, Ren Z M, Wei X Y, Huang W, Xia J, Wang Z H 2023 Small 19 2300631 Google Scholar
[5]	Wen T, Zhang M D, Li J, Jiao C Y, Pei S H, Wang Z H, Xia J 2023 Nanoscale Horiz. 8 516 Google Scholar
[6]	张茂笛, 焦陈寅, 文婷, 李靓, 裴胜海, 王曾晖, 夏娟 2022 物理学报 71 140702 Google Scholar Zhang M D, Jiao C Y, Wen T, Li J, Pei S H, Wang Z H, Xia J 2022 Acta. Phys. Sin. 71 140702 Google Scholar
[7]	Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M 2011 Nano Lett. 11 5111 Google Scholar
[8]	Chakraborty B, Matte H R, Sood A K, Rao C N R 2013 J. Raman Spectrosc. 44 92 Google Scholar
[9]	Akamatsu T, Ideue T, Zhou L, Dong Y, Kitamura S, Yoshii M, Yang D, Onga M, Nakagawa Y, Watanabe K, Taniguchi T, Laurienzo J, Huang J, Ye Z, Morimoto T, Yuan H, Iwasa Y 2021 Science 372 68 Google Scholar
[10]	Chaudhary K, Tamagnone M, Rezaee M, Bediako D K, Ambrosio A, Kim P, Capasso F 2019 Sci. Adv. 5 eaau7171 Google Scholar
[11]	Xu J P, Liu C, Wang M X, Ge J, Liu Z L, Yang X, Chen Y, Liu Y, Xu Z A, Gao C L, Qian D, Zhang F C, Jia J F 2014 Phys. Rev. Lett. 112 217001 Google Scholar
[12]	Gao W, Kahn A 2002 Org. Electron. 3 53 Google Scholar
[13]	Shojaei I A, Pournia S, Le C, Ortiz B R, Jnawali G, Zhang F C, Wilson S D, Jackson H E, Smith L M 2021 Sci. Rep. 11 8155 Google Scholar
[14]	Lee J E, Wang A, Chen S, Kwon M, Hwang J, Cho M, Son K, Han D, Choi J W, Kim Y D, Mo S, Petrovic C, Hwang C, Park S Y, Jang C, Ryu H 2024 Nat. Commun. 15 3971 Google Scholar
[15]	Bi X, Zhang Y, Ao L, Li H, Huang J, Qin F, Yuan H 2025 Adv. Funct. Mater. 35 2415988 Google Scholar
[16]	Jiao C, Pei S, Wu S, Wang Z, Xia J 2023 Rep. Prog. Phys. 86 114503 Google Scholar
[17]	Zhang Z, Jiao C, Pei S, Zhou X, Qin J, Zhang W, Zhou Y, Wang Z, Xia J 2024 Sci. China Phys. Mech. 67 288211 Google Scholar
[18]	Jiao C, Pei S, Zhang Z, Li C, Zhu J, Qin J, Zhang M, Wen T, Zhou Y, Wang Z, Xia J 2024 Appl. Phys. Rev. 11 031417 Google Scholar
[19]	Pei S, Wang Z, Xia J 2022 ACS Nano 16 11498 Google Scholar
[20]	Li X, Xie X, Wu B, Chen J, Li S, He J, Liu Z, Wang J, Liu Y 2024 Nano Res. 17 6749 Google Scholar
[21]	Zhao M, Zhang W, Liu M, Zou C, Yang K, Yang Y, Dong Y, Zhang L, Huang S 2016 Nano Res. 9 3772 Google Scholar
[22]	Guo Y, Zhang Y, Liu Q L, Zhou Z, He J, Yuan S, Heine T, Wang J 2024 ACS Nano 18 11732 Google Scholar
[23]	Chen D, Lian Z, Huang X, Su Y, Rashetnia M, Ma L, Yan L, Blei M, Xiang L, Taniguchi T, Watanabe K, Tongay S, Smirnov D, Wang Z, Zhang C, Cui Y T, Shi S F 2022 Nat. Phys. 18 1171 Google Scholar
[24]	Lian Z, Chen D, Ma L, Meng Y, Su Y, Yan L, Huang X, Wu Q, Chen X, Blei M, Taniguchi T, Watanabe K, Tongay S, Zhang C, Cui Y T, Shi S F 2023 Nat. Commun. 14 4604 Google Scholar
[25]	Sierra J F, Světlík J, Savero Torres W, Camosi L, Herling F, Guillet T, Xu K, Reparaz J S, Marinova V, Dimitrov D, Valenzuela S O 2025 Nat. Mater. 24 876 Google Scholar
[26]	Ali S A, Irfan A, Mazumder A, Balendhran S, Ahmed T, Walia S, Ulhaq A 2021 Appl. Phys. Lett. 119 193104 Google Scholar
[27]	Schrenkova V, Kapitán J, Bour P, Chatziadi A, Sklenar A, Kaminsky J 2024 Anal. Chem. 96 18983 Google Scholar
[28]	Yang D, Sandoval S J, Divigalpitiya W M R, Irwin J C, Frindt R F 1991 Phys. Rev. B 43 12053 Google Scholar
[29]	Guo H H, Yang T, Tao P, Zhang Z D 2014 Chin. Phys. B 23 017201 Google Scholar
[30]	Yazyev O V, Kis A 2015 Mater. Today. 18 20 Google Scholar
[31]	Newaz A K M, Prasai D, Ziegler J I, Caudel D, Robinson S, Haglund Jr R F, Bolotin K I 2013 Solid State Commun. 155 49 Google Scholar
[32]	Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G, Wang F 2010 Nano Lett. 10 1271 Google Scholar
[33]	Kaplan D, Gong Y, Mills K, Swaminathan V, Ajayan P M, Shirodkar S, Kaxiras E 2016 2D Mater. 3 015005 Google Scholar
[34]	Sun J, Gu Y J, Lei D Y, Lau S P, Wong W T, Wong K Y, Chan H L W 2016 ACS Photonics 3 2434 Google Scholar
[35]	Schönemann R, Chiu Y C, Zheng W, Quito V L, Sur S, McCandless G T, Chan J, Balicas L 2019 Phys. Rev. B 99 195128 Google Scholar
[36]	Soluyanov A A, Gresch D, Wang Z, Wu Q, Troyer M, Dai X, Bernevig B A 2015 Nature 527 495 Google Scholar
[37]	Conley H J, Wang B, Ziegler J I, Haglund Jr R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626 Google Scholar
[38]	He K, Poole C, Mak K F, Shan J 2013 Nano Lett. 13 2931 Google Scholar
[39]	Yu Y, Hu S, Su L, Huang L, Liu Y, Jin Z, Purezky A A, Geohegan D B, Kim K W, Zhang Y, Cao L 2015 Nano Lett. 15 486 Google Scholar
[40]	Chou H C, Zhang X Q, Shiau S Y, Chien C H, Tang P W, Sung C T, Chang Y C, Lee Y H, Chen C 2022 Nanoscale 14 6323 Google Scholar
[41]	Kim M S, Nam G, Park S, Kim H, Han G H, Lee J, Dhakal K P, Leem J Y, Lee Y H, Kim J 2015 Thin Solid Films 590 318 Google Scholar
[42]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805 Google Scholar
[43]	Shaw J A 1999 Appl. Opt. 38 3157 Google Scholar
[44]	Tong L, Duan X, Song L, Liu T, Ye L, Huang X, Wang P, Sun Y, He X, Zhang L, Xu K, Hu W, Xu J, Zang J, Cheng G J 2019 Appl. Mater. Today 15 203 Google Scholar
[45]	Zheng X, Wei Y, Zhang X, Wei Z, Luo W, Guo X, Liu J, Peng G, Cai W, Huang H, Lv T, Deng C, Zhang X 2022 Adv. Funct. Mater. 32 2202658 Google Scholar
[46]	Xie X, Ding J, Wu B, Zheng H, Li S, He J, Liu Z, Wang J, Liu Y 2023 Appl. Phys. Lett. 123 222101 Google Scholar
[47]	Robinson B J, Giusca C E, Gonzalez Y T, Kay N D, Kazakova O, Kolosov O V 2015 2D Mater. 2 015005 Google Scholar

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Vol. 74, Issue 24 - 2025-12-20

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