[1] Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[2] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[3] Simoen E, Mercha A, Claeys C, Lukyanchikova N 2007 Solid-State Electron. 51 16
[4] Jevtic M M 1995 Microelectron. Reliab. 35 455
[5] Jayarman R, Sodini C G 1989 IEEE Trans. Electron. Dev. 36 1773
[6] Fleetwood D M, Shaneyfelt M R, Schwank J R 1994 Appl. Phys Lett. 64 1965
[7] Sun P, Du L, He L, Chen W H, Liu Y D, Zhao Y 2012 Acta Phys. Sin. 61 127808 (in Chinese) [孙鹏, 杜磊, 何亮, 陈文豪, 刘玉栋, 赵瑛 2012 物理学报 61 127808]
[8] Liu Y, Wu W J, Li B, En Y F, Wang L, Liu Y R 2014 Acta Phys. Sin. 63 098503 (in Chinese) [刘远, 吴为敬, 李斌, 恩云飞, 王磊, 刘玉荣 2014 物理学报 63 098503]
[9] Zhang B Q, Zheng Z S, Yu F, Ning J, Tang H M, Yang Z A 2013 Acta Phys. Sin. 62 117303 (in Chinese) [张百强, 郑中山, 于芳, 宁瑾, 唐海马, 杨志安 2013 物理学报 62 117303]
[10] Peng C, Hu Z Y, Ning B X, Huang H X, Zhang Z X, Bi D W, En Y F, Zou S C 2014 IEEE Electron. Dev. Lett. 35 503
[11] Huang H X, Bi D W, Chen M, Zhang Z X, Wei X, Hu Z Y, Zhang Z X 2014 IEEE Trans. Nucl. Sci. 61 1400
[12] Xiong H D, Fleetwood D M, Felix J A, Gusev E P, Emic C D 2003 Appl. Phys Lett.. 83 5232
[13] Xiong H D, Jun B, Fleetwood D M, Schrimpf R D, Schwank 2004 IEEE Trans. Nucl. Sci. 51 3238
[14] Ferlet-Cavrois V, Colladant T, Paillet P, Leray J L, Musseau O, Schwank J R, Shaneyfelt M R, Pelloie J L, de Poncharra J D 2000 IEEE Trans. Nucl. Sci. 47 2183
[15] Jomaah J, Balestra 2004 IEE Proc. Circuits Devices Syst. 151 111
[16] Liu Y, Wu W J, En Y F, Wang L, Lei Z F, Wang X H 2014 IEEE Electron. Dev. Lett. 35 369
[17] Ioannidis E G, Tsormpatzoglou A, Tassis D H, Dimitriadis C A, Templier F, Kamarinos G 2010 J. Applied Phys. 108 106103
[18] Rahal M, Lee M, Burdett A P 2002 IEEE Trans. Electron. Dev. 49 319