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Au/PZT/BIT/p-Si异质结的制备与性能研究

王华 于军 董小敏 王耘波 周文利 赵建洪 周东祥

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Au/PZT/BIT/p-Si异质结的制备与性能研究

王华, 于军, 董小敏, 王耘波, 周文利, 赵建洪, 周东祥

PREPARATION AND CHARACTERIZATION OF THE Au/PZT/BIT/p-Si HETEROSTRUCTURE 

WANG HUA, YU JUN, DONG XIAO-MIN, WANG YUN-BO, ZHOU WEN-LI, ZHAO JIAN-HONG, ZHOU DONG-XIANG
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  • 采用脉冲激光沉积(PLD)工艺,制备了以Bi4Ti3O12(BIT)为过渡阻挡层的Au/PZT/BIT/p-Si异质结.研究了BIT铁电层对Pb(Zr0.52Ti0.48)O3(PZT)薄膜晶相结构、铁电及介电性能的影响,对Au/PZT/BIT/p-Si异质结的导电机制进行了讨论.氧气氛530℃淀积的PZT为多晶铁电薄膜,与直接淀积在Si基片上相比,加入BIT铁电层后PZT铁
    The Au/PZT/BIT/p-Si heterostructure was fabricated by pulsed laser deposition technique. The effect of introducing a BIT buffer layer between the PZT films and Si substrate on the crystallinity, the ferroelectric characteristics and the electrical characteristics of the ferroelectric film system, as well as the conductivity behavior of the Au/PZT/BIT/p-Si heterostructure were investigated. The PZT films deposited on p-Si with a BIT buffer layer were found to grow with a preferred orientation along(110) direction. In the case of identical thickness(400?nm) of ferroelectric layer, the PZT/BIT multilayer ferroelectric thin films showed a better ferroelectric property than PZT thin films. The clockwise rotational C-V hysteresis loop of the Au/PZT/BIT/p-Si heterostructure indicated that the PZT/BIT ferroelectric thin films had controlled the Si surface potential and showed a characteristic of polarization-type switching. The current-voltage (I-V) curves showed that the heterostructure was conductive only in the one voltage direction and the leakage currents are too low to identify in the opposite direction. The conduction in low voltage region displays an ohmic behavior and the current transportation in ferroelectric thin films at the high voltage region is ascribed to the space-charge limited current. The remnant polarization of the PZT/BIT films system remained tobe 90% of the initial value after 109 bipolar switching cycles.
    • 基金项目: 国家自然科学基金(批准号:69771024)资助的课题.
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  • 文章访问数:  3536
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出版历程
  • 收稿日期:  2000-05-01
  • 修回日期:  2000-12-13
  • 刊出日期:  2001-05-20

Au/PZT/BIT/p-Si异质结的制备与性能研究

  • 1. (1)华中科技大学电子科学与技术系,武汉430074; (2)华中科技大学电子科学与技术系,武汉430074;桂林电子工业学院电子信息分院,桂林541004
    基金项目: 

    国家自然科学基金(批准号:69771024)资助的课题.

摘要: 采用脉冲激光沉积(PLD)工艺,制备了以Bi4Ti3O12(BIT)为过渡阻挡层的Au/PZT/BIT/p-Si异质结.研究了BIT铁电层对Pb(Zr0.52Ti0.48)O3(PZT)薄膜晶相结构、铁电及介电性能的影响,对Au/PZT/BIT/p-Si异质结的导电机制进行了讨论.氧气氛530℃淀积的PZT为多晶铁电薄膜,与直接淀积在Si基片上相比,加入BIT铁电层后PZT铁

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