LaNiO3 (LNO) thin films were successfully prepared on Si (100) and Pt /Ti/SiO 2/Si substrates by metalorganic decomposition (MOD). Pb(Zr0.52Ti0.48)O3（ＰZＴ） thin films were prepared on the Pt( 111)/Ti/SiO2/Si, LNO/Si (100) and LNO/Pt(111)/Ti/SiO2/Si substrates by a modified sol-gel met hod. The crystallographic orientation and the microstructure of the resulting PZT thin f ilms on the different substrates were characterized by x_ray diffraction and sca nning electron microscopy. The dielectric and ferroelectric properties of PZT fi lms on the different substrates are discussed. The PZT films deposited on LNO/Pt /Ti/SiO2/Si and LNO/Si（100） substrates show strong ［100］ preferre d orient ation, while the films deposited on Pt/Ti/SiO2/Si substrates show ［1 10］ ori entations. PZT films on LNO/Pt/Ti/SiO2/Si and LNO/Si(100) substrates have lar ger average grain sizes, dielectric constant and remnant polarizations compared with those grown on Pt/Ti/SiO2/Si substrates.