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利用结合移相光栅掩模 (PSGM) 的激光结晶技术在超薄a-SiNx/a-Si:H/ a-SiN x三明治结构样品中制备出二维有序分布的纳米硅阵列.原始样品是用等离子体 增强化学气相淀积法生长.a-Si:H层厚为10nm,a-SiNx 为50nm,衬底材料为SiO 2/Si或 熔凝石英.原子力显微镜、剖面透射电子显微镜、高分辨透射电子显微镜对样品表面形貌和 微结构的观测结果表明,采用该方法可以在原始淀积的a-Si:H层中得到位置可控的晶化区域 :每个晶化区域直径约250nm,具有同PSGM一致的2μm周期;晶化区域内形成的纳米硅 颗粒尺寸接近原始淀积的a-Si:H层厚,且晶粒的择优取向为.The method of laser_induced crystallization combining with the phase-shifting grating mask (PSGM) was carried out to fabricate nanocrystal silicon (nc-Si) with the two-dimensional (2D) patterned distribution within a-SiNx/a- Si:H/ a-SiNx sandwiched structure grown on the SiO2/Si or fuse d quartz subst rate by plasma-enhanced chemical vapor deposition technique. The thicknesses of a-Si:H and a-SiNx layer are 10 and 50nm, respectively. The results of at omic force microscopy, cross-section transmission electron microscopy and high r esolution transmission electron microscopy show that the controllable crystalliz ed regions within the initial a-Si:H layer are selectively formed with a diamete r of about 250 nm and are patterned with the same 2D periodicity of 20 μm as that of the PSGM. Si nano-crystallites,the size of which is almost the same as the thickness of the a-Si:H layer, are formed in the crystallized regions, and h ave preferred orientation.
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Keywords:
- nanocrystal silicon, laser crystallization, selective crystallization, phase-shifting grating mask /
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