基于电压电流的IGBT关断机理与关断时间研究

刘宾礼; 刘德志; 罗毅飞; 唐勇; 汪波

doi:10.7498/aps.62.057202

摘要

基于半导体物理和IGBT基本结构, 深入论述了IGBT关断机理, 推导出IGBT关断时间随电压和电流的变化规律: 关断时间随电压的增大而增大, 随电流的增大而减小. 查明了变化规律的物理机理, 仿真和实验结果验证了理论推导与所得变化规律的正确性. 提出采用指数与双曲线复合规律描述IGBT关断时间的变化. 对深化IGBT关断机理和解决电力电子装置死区时间设置等工程问题具有一定的理论意义和应用价值.

关键词:

Based on semiconductor physics and the essential structure of IGBT, the turn-off mechanism of IGBT is deeply discussed regarding the problem of turn-off time changing with voltage and current. The laws of turn-off time changing with voltage and current are deduced, i.e., the turn-off time increases with voltage increasing and decreases with current increasing. The physical mechanisms of the laws are found out. The simulation results and experimental results, demonstrate that the derived and the existing law are constant, thereby proving the correctness of the derived law. It is put forward that the law of IGBT turn-off time changing with current and voltage accords with the complex law of exponent and hyperbola. For further studying the IGBT turn-off mechanism and solving the engineering puzzles including the power electronic dead time setting, the present study is significant in theory and practical application.

Keywords:

作者及机构信息

1.
海军工程大学, 舰船综合电力技术国防科技重点实验室, 武汉 430033

基金项目: 国家自然科学基金重点项目(批准号: 50737004)、国家自然科学基金面上项目(批准号: 51277178) 和国家自然科学基金创新研究群体科学基金(批准号: 50721063)资助的课题.

Authors and contacts

1.
National Key Laboratory of Vessel Integrated Power System Technology, Naval University of Engineering, Wuhan 430033, China

Funds: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 50737004), the National Natural Science Foundation of China (Grant No. 51277178), and the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 50721063).

参考文献

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[10]	Huang R, Wang Y 2010 Semiconductor physics and device fundamentals (Beijing: Electronics Industry Press) p325 (in Chinese) [黄如, 王漪 2010 半导体物理与器件基础 (北京: 电子工业出版社) 第325页]
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[15]	Bryant A T, Kang X S 2006 IEEE Transactions on Power Electronics 21 295
[16]	Marco A R, Abraham C S 2011 IEEE Transactions on Industrial Electronics 58 1625
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[20]	Tang Y, Hu A, Chen M 2009 Transactions of China Electro Technical Society 24 76

施引文献

[1]	Xu D H 2008 Modern power electronics device principle and Application technology (Beijing: Mechanical Industry Press) p92 (in Chinese) [徐德鸿 2008 现代电力电子器件原理与应用技术 (北京: 机械工业出版社) 第92页]
[2]	Lin W X 2002 Modern power electronics circuit (Hangzhou: Zhejiang University Press) p44 (in Chinese) [林渭勋 2002 现代电力电子电路 (杭州: 浙江大学出版社) 第44页]
[3]	Angus B, Yang S Y 2011 IEEE Transactions on Power Electronics 26 30193031
[4]	Wu Y, Zhang W R, Liu X M 2005 Power Semiconductor Devices: Theory and Application (Beijing: Chemical Industry Press) p262 (in Chinese) [吴郁, 张万荣, 刘兴明 2005 功率半导体器件–理论及应用 (北京: 化学工业出版社) 第262页]
[5]	Yuan S C 2007 IGBT Field Effect Semiconductor Power Devices (Beijing: Science Press) p100 (in Chinese) [袁寿财 2007 IGBT场效应半导体功率器件导论 (北京: 科学出版社) 第100页]
[6]	Azzopardia S, Benmansoura A, Ishikob M, Woirgarda E 2005 Microelectronics Reliability 45 1700
[7]	Chen Z M, Li S Z 2008 Wide bandgap semiconductor power electronic device and its application (Beijing: Mechanical Industry Press) p88 (in Chinese) [陈治明, 李守智 2008 宽禁带半导体电力电子器件及其应用 (北京: 机械工业出版社) 第88页]
[8]	Yuan L Q, Zhao Z M, Song G S and Wang Z Y 2011 Power semiconductor device theory and application (Beijing: Mechanical Industry Press) p111 (in Chinese) [袁立强, 赵争鸣, 宋高升, 王正元 2011 电力半导体器件原理与应用 (北京: 机械工业出版社) 第111页]
[9]	Zhao Y Q, Yao S Y and Xie X D 2010 Semiconductor physics and devices (3rd Edn.) (Beijing: Electronics Industry Press) p212 (in Chinese) [赵毅强, 姚素英, 解晓东 2010 半导体物理与器件 (第三版) (北京: 电子工业出版社) 第212页]
[10]	Huang R, Wang Y 2010 Semiconductor physics and device fundamentals (Beijing: Electronics Industry Press) p325 (in Chinese) [黄如, 王漪 2010 半导体物理与器件基础 (北京: 电子工业出版社) 第325页]
[11]	Fang J P, Hao Y, Liu H X 2001 Acta Phys. Sin. 50 1172 (in Chinese) [方建平, 郝跃, 刘红侠 2001 物理学报 50 1172]
[12]	Zhou X D, Lin W, Fang J 2006 Acta Phys. Sin. 55 3360 (in Chinese) [周贤达, 林薇, 方健 2006 物理学报 55 3360]
[13]	Nishad P, Diganta D, Michael P 2012 Microelectronics Reliability 52 482
[14]	Urresti J, Castellazzi A 2007 Microelectronics Reliability 47 1725
[15]	Bryant A T, Kang X S 2006 IEEE Transactions on Power Electronics 21 295
[16]	Marco A R, Abraham C S 2011 IEEE Transactions on Industrial Electronics 58 1625
[17]	Du M X, Wei K X 2011 Acta Phys. Sin. 60 108401 (in Chinese) [杜明星, 魏克新 2011 物理学报 60 108401]
[18]	Patrick R P, Enrico S, Jerry L 2003 IEEE Transactions on Power Electronics 18 1220
[19]	Tang Y 2010 Ph. D. Study on Device Model Theory (Wuhan: Naval University of Engineering) (in Chinese) [唐勇 2010 博士学位论文 (武汉: 海军工程大学)]
[20]	Tang Y, Hu A, Chen M 2009 Transactions of China Electro Technical Society 24 76

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