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利用计算机辅助设计技术数值仿真工具, 研究22 nm工艺技术节点下超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应, 系统地分析了掺杂地平面技术、重离子入射位置、栅功函数和衬底偏置电压对于单粒子瞬态效应的影响. 模拟结果表明, 掺杂地平面和量子效应对于单粒子瞬态效应影响很小, 重离子入射产生大量电荷, 屏蔽了初始电荷分布的差异性. 单粒子瞬态效应以及收集电荷和重离子入射位置强相关, 超薄体全耗尽绝缘体上硅最敏感的区域靠近漏端. 当栅功函数从4.3 eV变化到4.65 eV时, 单粒子瞬态电流峰值从564 μA减小到509 μA, 收集电荷从4.57 fC减小到3.97 fC. 超薄体全耗尽绝缘体上硅器件单粒子瞬态电流峰值被衬底偏置电压强烈调制, 但是收集电荷却与衬底偏置电压弱相关.
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关键词:
- 超薄体全耗尽绝缘体上硅 /
- 单粒子瞬态效应 /
- 电荷收集 /
- 数值仿真
Single-event-transient response of 22-nm technology ultra-thin-body fully-depleted silicon-on-insulator transistor is examined by technology computer-aided design numerical simulation. The influences of ground plane doping, heavy ion injection location, gate work function and substrate bias on single-event-transient characteristic are systematically studied and analyzed. Simulation results show that the influences of ground plane doping and quantum effects on single-event-transient (SET) are relatively small. The SET characteristics and collected charge are strike-location sensitive. The most SET-sensitive region in ultra-thin-body fully-depleted silicon-on-insulator transistor is located near the drain region. When gate work function varies from 4.3 eV to 4.65 eV, the transient current peak is reduced from 564 μA to 509 μA and the collected charge decreases from 4.57 fC to 3.97 fC. The transient current peak is strongly affected by substrate bias. In contrast, the total collected charge depends only weakly on substrate bias.-
Keywords:
- ultra-thin-body fully-depleted silicon-on-insulator /
- single-event-transient /
- charge collection /
- numerical simulation
[1] Bi J S, Hai C H, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 物理学报 60 018501]
[2] Zhuo Q Q, Liu H X, Yang Z N, Cai H M, Hao Y 2012 Acta Phys. Sin. 61 220702 (in Chinese) [卓青青, 刘红侠, 杨兆年, 蔡惠民, 郝跃 2012 物理学报 61 220702]
[3] Tsuchiya T, Sato Y, Tomizawa M 1998 IEEE Trans. Electr. Dev. 45 5
[4] Choi Y K, Asano K, Lindert N, Subramanium V, King T J, Bokor J, Hu C 2000 IEEE Electr. Dev. Lett. 21 5
[5] Vandooren A, Jovanovic D, Egley S, Sadd M, Nguyen B Y, White B, Orlowski M, Mogab J 2002 Proccedings of IEEE SOI Conference Virginia, USA, October 7-10, 2002 p205
[6] Li X J, Liu C M, Sun Z L, Lan M J, Xiao L Y, He S Y 2013 Acta Phys. Sin. 62 058502 (in Chinese) [李兴冀, 刘超铭, 孙中亮, 兰慕杰, 肖立伊, 何世禹 2012 物理学报 62 058502]
[7] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 物理学报 62 048501]
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[9] Alles M L, Schrimpf R D, Reed R A, Massengill L W, Weller R A, Mendenhall M H 2011 Proccedings of IEEE SOI Conference Arizona, USA, October 3-6, 2011 p223
[10] Ferlet-Cavrois V, Paillet P, McMorrow D, Melinger J S, Campbell A B, Gaillardin M, Faynot O, Thomas O 2005 Proccedings of Radiation Effects on Components and Systems Cap D’Agde, France, September 19-23, 2005 pC22-1
[11] Musseau O, Ferlet-Cavrois V, Pelloie J L, Buchner S, McMorrow D, Campbell A B 2000 IEEE Trans. Nucl. Sci. 47 6
[12] Castellani-Coulié K, Munteanu D, Autran J L, Ferlet-Cavrois V, Paillet P, Baggio J 2005 IEEE Trans. Nucl. Sci. 52 5
[13] Munteanu D, Autran J L 2009 IEEE Trans. Nucl. Sci. 56 4
[14] El-Mamouni F, Zhang E X, Ball D R, Sierawski B, King M P, Schrimpf R D, Reed R A, Alles M L, Fleetwood D M, Linten D M, Simoen E, Vizkelethy G 2012 IEEE Trans. Nucl. Sci. 59 6
[15] Qin J R, Chen S M, Li D W, Liang B, Liu B W 2012 Chin. Phys. B 21 089401
[16] Kim S S, Choe T H, Rhee H S, Bae G J, Lee K W, Lee N I, Fujihara K, Kang K K, Moon J Y 2000 Proceedings of IEEE SOI Conference Massachusetts, USA, October 2-5, 2011 p74
[17] Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, Buttet C, Abbate F, Bourdelle K K, Nguyen B Y, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F 2011 Proceedings of Solid-State Device Research Conference Helsinki, Finland, September 12-16, 2011 p111
[18] Fan Z H, Bi J S, Luo J J, Han Z S 2010 Proceedings 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Shanghai, China November 1-4, 2010 p1847
[19] Hirose K, Saito H, Kuroda Y, Ishii S, Fukuoka Y, Takahashi D 2002 IEEE Trans. Nucl. Sci. 49 6
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[1] Bi J S, Hai C H, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 物理学报 60 018501]
[2] Zhuo Q Q, Liu H X, Yang Z N, Cai H M, Hao Y 2012 Acta Phys. Sin. 61 220702 (in Chinese) [卓青青, 刘红侠, 杨兆年, 蔡惠民, 郝跃 2012 物理学报 61 220702]
[3] Tsuchiya T, Sato Y, Tomizawa M 1998 IEEE Trans. Electr. Dev. 45 5
[4] Choi Y K, Asano K, Lindert N, Subramanium V, King T J, Bokor J, Hu C 2000 IEEE Electr. Dev. Lett. 21 5
[5] Vandooren A, Jovanovic D, Egley S, Sadd M, Nguyen B Y, White B, Orlowski M, Mogab J 2002 Proccedings of IEEE SOI Conference Virginia, USA, October 7-10, 2002 p205
[6] Li X J, Liu C M, Sun Z L, Lan M J, Xiao L Y, He S Y 2013 Acta Phys. Sin. 62 058502 (in Chinese) [李兴冀, 刘超铭, 孙中亮, 兰慕杰, 肖立伊, 何世禹 2012 物理学报 62 058502]
[7] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 物理学报 62 048501]
[8] Massengill L W, Bhuva B L, Holman W T, Alles M L, Loveless T D 2012 Proccedings of IEEE International Reliability Physics Symposium California, USA, April 15-19, 2012 p3C1. 1
[9] Alles M L, Schrimpf R D, Reed R A, Massengill L W, Weller R A, Mendenhall M H 2011 Proccedings of IEEE SOI Conference Arizona, USA, October 3-6, 2011 p223
[10] Ferlet-Cavrois V, Paillet P, McMorrow D, Melinger J S, Campbell A B, Gaillardin M, Faynot O, Thomas O 2005 Proccedings of Radiation Effects on Components and Systems Cap D’Agde, France, September 19-23, 2005 pC22-1
[11] Musseau O, Ferlet-Cavrois V, Pelloie J L, Buchner S, McMorrow D, Campbell A B 2000 IEEE Trans. Nucl. Sci. 47 6
[12] Castellani-Coulié K, Munteanu D, Autran J L, Ferlet-Cavrois V, Paillet P, Baggio J 2005 IEEE Trans. Nucl. Sci. 52 5
[13] Munteanu D, Autran J L 2009 IEEE Trans. Nucl. Sci. 56 4
[14] El-Mamouni F, Zhang E X, Ball D R, Sierawski B, King M P, Schrimpf R D, Reed R A, Alles M L, Fleetwood D M, Linten D M, Simoen E, Vizkelethy G 2012 IEEE Trans. Nucl. Sci. 59 6
[15] Qin J R, Chen S M, Li D W, Liang B, Liu B W 2012 Chin. Phys. B 21 089401
[16] Kim S S, Choe T H, Rhee H S, Bae G J, Lee K W, Lee N I, Fujihara K, Kang K K, Moon J Y 2000 Proceedings of IEEE SOI Conference Massachusetts, USA, October 2-5, 2011 p74
[17] Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, Buttet C, Abbate F, Bourdelle K K, Nguyen B Y, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F 2011 Proceedings of Solid-State Device Research Conference Helsinki, Finland, September 12-16, 2011 p111
[18] Fan Z H, Bi J S, Luo J J, Han Z S 2010 Proceedings 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Shanghai, China November 1-4, 2010 p1847
[19] Hirose K, Saito H, Kuroda Y, Ishii S, Fukuoka Y, Takahashi D 2002 IEEE Trans. Nucl. Sci. 49 6
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