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Cd1-xLuxO(x=0%, 0.1%, 0.5%, 0.75%, 1.0%, 1.25%, 1.5%, 2%) ceramics have been synthesized by the traditional solid phase sintering method; and the effects of Lu3+-doping on the electric and thermal transport properties of these samples are investigated. With the increase of Lu3+-doping concentration, the room temperature carrier concentration in Cd1-xLuxO increases while the mobility first increases and then decreases. In the measuring temperature range of 300 to 1000 K, the electric conductivity of Cd1-xLuxO exhibites a metallic conducting behavior, and both their electric conductivity and thermal conductivity increase with the Lu3+-doping concentration. The Seebeck coefficient S of Cd1-xLuxO is negative in the whole measuring temperature range, and the dependence of S on the carrier concentration can be describedby a free electron model.
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Keywords:
- CdO /
- electric and thermal transport properties /
- semiconductor doping
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[30] [31] Jung K H, Lee K H, Seo W S, Choi S M 2012 Appl. Phys. Lett. 100 253902
[32] [33] Tsujii N, Mori T 2013 Appl. Phys. Exp. 6 043001
[34] B'erardan D, Guilmeau E, Maignan A, Raveau B 2008 Solid. State. Commun. 146 97
[35] [36] [37] Tsubota T, Ohtaki M, Eguchi K, Arai H 1997 J. Mater. Chem. 7 85
[38] Jood P, Mehta R J, Zhang Y L, Peleckis G, Wang X L, Siegel R W 2011 Nano. Lett. 11 4337
[39] -
[1] Ambrosini A, Palmer G B, Maignan A, Poeppelmeier K R 2002 Chem. Mater. 14 52
[2] [3] Badeker K 1907 Ann. Phys. 22 749
[4] Bel Hadj Tahar R, Ban T, Ohya Y, Takahashi Y 1998 J. Appl. Phys. 83 2631
[5] [6] [7] Yan M, Lane M, Kannewurf C R, Changa R P H 2001 Appl. Phys. Lett. 78 2342
[8] Muhammad R, Fayyaz H, Muhammad I, Ahmad S A, Noor N A 2014 Chin. Phys. B 23 017304
[9] [10] Wang S F, L Q, Li L J, Fu G S, Liu F Q, Dai S Y, Yu W, Wang J L 2013 Scripta Mater. 69 533
[11] [12] Wang S F, Liu F Q, L Q, Dai S Y, Wang J L, Yu W, Fu G S 2013 J. Eur. Ceram. Soc. 33 1763
[13] [14] [15] Ohta H 2007 Mater. Today 10 15
[16] Zhang L H, Tosho T, Okinaka N, Akiyama T 2007 Mater. Trans. JIM 5 1079
[17] [18] [19] Wang N, Li H W, Ba Y S, Wang Y F, Wan C L, Fujinami K, Koumoto K 2010 J. Electron. Mater. 39 1777
[20] [21] Zheng G H, Yuan Z H, Dai Z X, Wang H Q, Li H B, Ma Y Q, Li G 2013 J. Low Temp. Phys. 173 80
[22] Sun Z, Chen S P, Yang J F, Meng Q S, Cui J L 2014 Acta Phys. Sin. 63 5 (in Chinese)[孙政, 陈少平, 杨江锋, 孟庆森, 崔教林2014物理学报63 5]
[23] [24] Yan M, Lane M, Kannewurf C R, Chang R P H 2001 Appl. Phys. Lett. 78 2342
[25] [26] [27] Look D C, Leedy K D, Vines L, Svensson B G, Zubiaga A, Tuomisto F T, Dout D R, Brillson L J 2011 Phys. Rev. B 84 115202
[28] [29] Liu Y, Lin Y H, Xu W, Cheng B, Lan J L, Chen D L 2012 J. Am. Ceram. 95 2568
[30] [31] Jung K H, Lee K H, Seo W S, Choi S M 2012 Appl. Phys. Lett. 100 253902
[32] [33] Tsujii N, Mori T 2013 Appl. Phys. Exp. 6 043001
[34] B'erardan D, Guilmeau E, Maignan A, Raveau B 2008 Solid. State. Commun. 146 97
[35] [36] [37] Tsubota T, Ohtaki M, Eguchi K, Arai H 1997 J. Mater. Chem. 7 85
[38] Jood P, Mehta R J, Zhang Y L, Peleckis G, Wang X L, Siegel R W 2011 Nano. Lett. 11 4337
[39]
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