点缺陷调控: 宽禁带II族氧化物半导体的机遇与挑战

谢修华; 李炳辉; 张振中; 刘雷; 刘可为; 单崇新; 申德振

doi:10.7498/aps.68.20191043

摘要

宽禁带II族氧化物半导体材料体系, 包括氧化铍(BeO)、氧化镁(MgO)、氧化锌(ZnO)及合金, 拥有较大的激子结合能(ZnO 60 meV, MgO 80 meV), 较高的光学增益(ZnO 300 cm^–1)以及较宽的可调带隙(ZnO 3.37 eV, MgO 7.8 eV, BeO 10.6 eV), 具有实现紫外及深紫外波段低阈值激光器的独特优势, 同时也是取代传统气体放电灯(汞灯、氘灯、准分子灯、氙灯)成为深紫外乃至真空紫外光源的重要候选材料之一. 虽然经过20余年的研究历程, ZnO基pn同质结近紫外电致发光方向取得了长足进步, 但是, 随着带隙的展宽, 伴随而来的受主(施主)离化能变高(百毫电子伏特量级), 使得室温等效热能(26 meV)无法实现对杂质能级上的空穴(电子)有效离化; 此外, 掺杂过程中存在的自补偿效应也进一步弱化了载流子的产率, 以上因素已经成为了阻碍宽禁带II 族氧化物半导体实现紫外激光器件及向更短波长扩展的瓶颈性问题, 同时也是其他宽禁带半导体材料共同面对的难题. 对材料电学及发光性能的调控往往取决于对关键缺陷态的识别与控制, 丰富的点缺陷及其组合类型, 使宽禁带II族氧化物半导体成为研究缺陷物理的重要平台. 针对特定点缺陷的识别及表征将有望发现并进一步构建能级较浅的缺陷态, 为电学性能调控提供基础. 本文从高质量外延生长、杂质与点缺陷、p型掺杂及紫外电致发光三个方面阐述II族氧化物半导体近期研究结果, 通过对相关研究工作的概览, 阐明该体系作为深紫外光源材料的独特优势的同时, 指明未来针对电学性能调控的关键在于对点缺陷的调控.

关键词:

宽禁带 /
点缺陷 /
掺杂 /
离化能

Abstract

II-oxides wide-bandgap semiconductor, including the beryllium oxide (BeO), magnesium oxide (MgO), zinc oxide (ZnO), have large exciton binding energy (ZnO 60 meV, MgO 80 meV), high optical gain (ZnO 300 cm^–1) and wide tunable band gap (3.37 eV ZnO, MgO 7.8 eV, BeO 10.6 eV), which are the advantages of achieving low-threshold laser devices in the ultraviolet wavelength. It is also one of the important candidates to replace the traditional gas arc lamp (such as mercury lamp, deuterium lamp, excimer lamp, xenon lamp etc.) as the source of deep ultraviolet and even vacuum ultraviolet. Although, during the past decades, the ZnO-based pn homojunction devices have made great progress in the near-UV electroluminescence, but as the band gap broadens, the acceptor (or donor) ionization energy becomes higher (On the order of hundreds meV), which causing the room temperature equivalent thermal energy (26 meV) cannot make the impurities ionizing effectively. In addition, the self-compensation effect in the doping process further weakens the carrier yield. These above drawbacks have become the bottleneck that hinders II-oxides wide-bandgap semiconductor from achieving ultraviolet laser devices and expanding to shorter wavelengths, and are also a common problem faced by other wide-bandgap semiconductor materials. The regulation of the electrical and luminescent properties of materials often depends on the control of critical defect states. The rich point defects and their combination types make the II-oxides wide-bandgap semiconductors an important platform for studying defect physics. For the identification and characterization of specific point defects, it is expected to discover and further construct shallower defect states, which will provide a basis for the regulation of electrical performance. In this paper, recent research results of II-oxides wide-bandgap semiconductors will be described from three aspects: high-quality epitaxial growth, impurity and point defects, p-type doping and ultraviolet electroluminescence. Through the overview of related research works, II-oxides wide-bandgap semiconductors are clarified as deep ultraviolet light sources materials. Meanwhile, indicates that the key to the regulation of electrical performance in the future lies in the regulation of point defects.

Keywords:

作者及机构信息

1.
中国科学院长春光学精密机械与物理研究所, 发光学及应用国家重点实验室, 长春　130033

2.
郑州大学, 物理工程学院, 郑州　450001

通信作者: 申德振, shendz@ciomp.ac.cn

基金项目: 国家重大科研仪器设备研制专项(批准号: 11727902)和吉林省优秀青年人才基金项目(批准号: 20190103042JH)资助的课题.

Authors and contacts

1.
State Key Laboratory of Luinescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

2.
Zhengzhou University, School of Physics and Engineering, Zhengzhou 450001, China

Corresponding author: Shen De-Zhen, shendz@ciomp.ac.cn

Funds: Project supported by the National Key Scientific Instrument and Equipment Development Project of China (Grant No. 11727902) and the Excellent Young Scientists Fund of Jilin Province, China (Grant No. 20190103042JH).

文章全文

参考文献

[1]	Prakash V, Agarwal A, Mussada E K 2019 Silicon 11 1617 Google Scholar
[2]	Neubert M, Rudolph P 2001 Prog. Cryst. Growth Charact. Mater. 43 119 Google Scholar
[3]	Mullin J B 2004 J. Cryst. Growth 264 578 Google Scholar
[4]	Nakamura S 2015 Rev. Mod. Phys. 87 1139 Google Scholar
[5]	Akasaki I 2015 Rev. Mod. Phys. 87 1119 Google Scholar
[6]	Amano H 2015 Rev. Mod. Phys. 87 1133 Google Scholar
[7]	Liang Y H, Towe E 2018 Appl. Phys. Rev. 5 011107 Google Scholar
[8]	Walsh A, Zunger A 2017 Nat. Mater. 16 964 Google Scholar
[9]	Chen Y F, Ko H J, Hong S K, Yao T, Segawa Y 2000 J. Cryst. Growth 214 87 Google Scholar
[10]	Chen Y F, Ko H J, Hong S K, Yao T 2000 Appl. Phys. Lett. 76 559 Google Scholar
[11]	Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara K, Tanabe T, Takasu H 2000 Appl. Phys. Lett. 77 1801 Google Scholar
[12]	Fons P, Iwata K, Niki S, Yamada A, Matsubara K, Watanabe M 2000 J. Cryst. Growth 209 532 Google Scholar
[13]	Liu J S, Shan C X, Wang S P, Sun F, Yao B, Shen D Z 2010 J. Cryst. Growth 312 2861 Google Scholar
[14]	Kato H, Miyamoto K, Sano M, Yao T 2004 Appl. Phys. Lett. 84 4562 Google Scholar
[15]	Hong S K, Hanada T, Ko H J, Chen Y F, Yao T, Imai D, Araki K, Shinohara M, Saitoh K, Terauchi M 2002 Phys. Rev. B 65 115331 Google Scholar
[16]	Park J S, Hong S K, Minegishi T, Park S H, Im I H, Hanada T, Cho M W, Yao T, Lee J W, Lee J Y 2007 Appl. Phys. Lett. 90 201907 Google Scholar
[17]	Xie X H, Li B H, Zhang Z Z, Wang S P, Shen D Z 2018 Sci. Rep. 8 17020 Google Scholar
[18]	Helbig R 1972 J. Cryst. Growth. 15 25 Google Scholar
[19]	Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Cantwell G, Harsch W C 1998 Solid State Commun. 105 399 Google Scholar
[20]	Ohshima E, Ogino H, Niikura I, Maeda K, Sato M, Ito M, Fukuda T 2004 J. Cryst. Growth 260 166 Google Scholar
[21]	Maeda K, Sato M, Niikura I, Fukuda T 2005 Semicond. Sci. Technol. 20 S49 Google Scholar
[22]	Ehrentraut D, Maeda K, Kano M, Fujii K, Fukuda T 2011 J. Cryst. Growth 320 18 Google Scholar
[23]	Graubner S, Neumann C, Volbers N, Meyer B K, Blasing J, Krost A 2007 Appl. Phys. Lett. 90 042103 Google Scholar
[24]	Takamizu D, Nishimoto Y, Akasaka S, Yuji H, Tamura K, Nakahara K, Onuma T, Tanabe T, Takasu H, Kawasaki M, Chichibu S F 2008 J. Appl. Phys. 103 063502 Google Scholar
[25]	Kato H, Sano M, Miyamoto K, Yao T 2003 Jpn. J. Appl. Phys. Part 2-Lett. 42 L1002 Google Scholar
[26]	Kato H, Sano M, Miyamoto K, Yao T 2003 Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap. 42 2241 Google Scholar
[27]	Park S H, Minegishi T, Lee H J, Oh D C, Ko H J, Chang J H, Yao T 2011 J. Appl. Phys. 110 053520 Google Scholar
[28]	Tsukazaki A, Akasaka S, Nakahara K, Ohno Y, Ohno H, Maryenko D, Ohtomo A, Kawasaki M 2010 Nat. Mater. 9 889 Google Scholar
[29]	Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501 Google Scholar
[30]	Makino T, Segawa Y, Kawasaki M, Ohtomo A, Shiroki R, Tamura K, Yasuda T, Koinuma H 2001 Appl. Phys. Lett. 78 1237 Google Scholar
[31]	Choopun S, Vispute R D, Yang W, Sharma R P, Venkatesan T, Shen H 2002 Appl. Phys. Lett. 80 1529 Google Scholar
[32]	Sharma A K, Narayan J, Muth J F, Teng C W, Jin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 75 3327 Google Scholar
[33]	Teng C W, Muth J F, Ozgur U, Bergmann M J, Everitt H O, Sharma A K, Jin C, Narayan J 2000 Appl. Phys. Lett. 76 979 Google Scholar
[34]	Coli G, Bajaj K K 2001 Appl. Phys. Lett. 78 2861 Google Scholar
[35]	Ohtomo A, Shiroki R, Ohkubo I, Koinuma H, Kawasaki M 1999 Appl. Phys. Lett. 75 4088 Google Scholar
[36]	Vashaei Z, Minegishi T, Suzuki H, Hanada T, Cho M W, Yao T, Setiawan A 2005 J. Appl. Phys. 98 054911 Google Scholar
[37]	Tanaka H, Fujita S, Fujita S 2005 Appl. Phys. Lett. 86 192911 Google Scholar
[38]	Zheng Q H, Huang F, Ding K, Huang J, Chen D G, Zhan Z B, Lin Z 2011 Appl. Phys. Lett. 98 221112 Google Scholar
[39]	Wang L K, Ju Z G, Zhang J Y, Zheng J, Shen D Z, Yao B, Zhao D X, Zhang Z Z, Li B H, Shan C X 2009 Appl. Phys. Lett. 95 131113 Google Scholar
[40]	Xie X H, Zhang Z Z, Li B H, Wang S P, Jiang M M, Shan C X, Zhao D X, Chen H Y, Shen D Z 2014 Opt. Express 22 246 Google Scholar
[41]	Ju Z G, Shan C X, Yang C L, Zhang J Y, Yao B, Zhao D X, Shen D Z, Fan X W 2009 Appl. Phys. Lett. 94 101902 Google Scholar
[42]	Ju Z G, Shan C X, Jiang D Y, Zhang J Y, Yao B, Zhao D X, Shen D Z, Fan X W 2008 Appl. Phys. Lett. 93 173505 Google Scholar
[43]	Kaneko K, Onuma T, Tsumura K, Uchida T, Jinno R, Yamaguchi T, Honda T, Fujita S 2016 Appl. Phys. Express 9 111102 Google Scholar
[44]	Onuma T, Ono M, Ishii K, Kaneko K, Yamaguchi T, Fujita S, Honda T 2018 Appl. Phys. Lett. 113 061903 Google Scholar
[45]	Kaneko K, Tsumura K, Ishii K, Onuma T, Honda T, Fujita S 2018 J. Electron. Mater. 47 4356 Google Scholar
[46]	Wen M C, Lu S A, Chang L, Chou M M C, Ploog K H 2017 J. Cryst. Growth 477 169 Google Scholar
[47]	Ryu Y R, Lee T S, Lubguban J A, Corman A B, White H W, Leem J H, Han M S, Park Y S, Youn C J, Kim W J 2006 Appl. Phys. Lett. 88 052103 Google Scholar
[48]	Kim W J, Leem J H, Han M S, Ryu Y R, Lee T S 2006 J. Appl. Phys. 99 096104 Google Scholar
[49]	Su L X, Zhu Y, Chen M M, Zhang Q L, Su Y Q, Ji X, Wu T Z, Gui X C, Xiang R, Tang Z K 2013 Appl. Phys. Lett. 103 072104 Google Scholar
[50]	Jeong T S, Han M S, Kim J H, Bae S J, Youn C J 2007 J. Phys. D-Appl. Phys. 40 370 Google Scholar
[51]	Chen M M, Xiang R, Su L X, Zhang Q L, Cao J S, Zhu Y, Gui X C, Wu T Z, Tang Z K 2012 J. Phys. D-Appl. Phys. 45 455101 Google Scholar
[52]	Ye D Q, Mei Z X, Liang H L, Liu Y L, Azarov A, Kuznetsov A, Du X L 2014 J. Phys. D-Appl. Phys. 47 175102 Google Scholar
[53]	Park S H, Ahn D 2014 Physica B 441 12 Google Scholar
[54]	Su L X, Zhu Y, Zhang Q L, Chen M M, Wu T Z, Gui X C, Pan B C, Xiang R, Tang Z K 2013 Appl. Surf. Sci. 274 341 Google Scholar
[55]	Yong D Y, He H Y, Su L X, Zhu Y, Tang Z K, Pan B C 2014 J. Alloys Compd. 608 197 Google Scholar
[56]	Ding K, Ullah M B, Avrutin V, Ozgur U, Morkoc H 2017 Appl. Phys. Lett. 111 182101 Google Scholar
[57]	Gorczyca I, Teisseyre H, Suski T, Christensen N E, Svane A 2016 J. Appl. Phys. 120 215704 Google Scholar
[58]	Toporkov M, Demchenko D O, Zolnai Z, Volk J, Avrutin V, Morkoc H, Ozgur U 2016 J. Appl. Phys. 119 095311 Google Scholar
[59]	Toporkov M, Avrutin V, Okur S, Izyumskaya N, Demchenko D, Volk J, Smith D J, Morkoc H, Ozgur U 2014 J. Cryst. Growth 402 60 Google Scholar
[60]	Yang C, Li X M, Gao X D, Cao X, Yang R, Li Y Z 2010 J. Cryst. Growth 312 978 Google Scholar
[61]	Toporkov M, Ullah M B, Demchenko D O, Avrutin V, Morkoc H, Ozgur U 2017 J. Cryst. Growth 467 145 Google Scholar
[62]	Ullah M B, Avrutin V, Nakagawara T, Hafiz S, Altuntas I, Ozgur U, Morkoc H 2017 J. Appl. Phys. 121 185704 Google Scholar
[63]	Roessler D M, Walker W C 1967 Phys. Rev. 159 733 Google Scholar
[64]	Cordero B, Gomez V, Platero-Prats A E, Reves M, Echeverria J, Cremades E, Barragan F, Alvarez S 2008 Dalton Trans. 21 2832
[65]	Ashrafi A, Jagadish C 2007 J. Appl. Phys. 102 071101 Google Scholar
[66]	Zhu Y, Chen M M, Su L X, Su Y Q, Ji X, Gui X C, Tang Z K 2014 J. Alloys Compd. 616 505 Google Scholar
[67]	Chen M M, Zhu Y, Su L X, Zhang Q L, Chen A Q, Ji X, Xiang R, Gui X C, Wu T Z, Pan B C, Tang Z K 2013 Appl. Phys. Lett. 102 202103 Google Scholar
[68]	Freysoldt C, Grabowski B, Hickel T, Neugebauer J, Kresse G, Janotti A, Van de Walle C G 2014 Rev. Mod. Phys. 86 253 Google Scholar
[69]	Kohan A F, Ceder G, Morgan D, Van de Walle C G 2000 Phys. Rev. B 61 15019 Google Scholar
[70]	Sokol A A, French S A, Bromley S T, Catlow C R A, van Dam H J J, Sherwood P 2007 Faraday Discuss. 134 267 Google Scholar
[71]	Lyons J L, Janotti A, Van de Walle C G 2009 Appl. Phys. Lett. 95 252105 Google Scholar
[72]	Wang L G, Zunger A 2003 Phys. Rev. Lett. 90 256401 Google Scholar
[73]	Duan X M, Stampfl C, Bilek M M M, McKenzie D R 2009 Phys. Rev. B 79 235208 Google Scholar
[74]	Urban D F, Korner W, Elsasser C 2016 Phys. Rev. B 94 075140 Google Scholar
[75]	Puchala B, Morgan D 2012 Phys. Rev. B 85 195207 Google Scholar
[76]	Limpijumnong S, Zhang S B, Wei S H, Park C H 2004 Phys. Rev. Lett. 92 155504 Google Scholar
[77]	Li J, Wei S H, Li S S, Xia J B 2006 Phys. Rev. B 74 081201 Google Scholar
[78]	Gai Y Q, Li J B, Li S S, Xia J B, Yan Y F, Wei S H 2009 Phys. Rev. B 80 153201 Google Scholar
[79]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2018 AIP Adv. 8 035115
[80]	Lautenschlaeger S, Sann J, Volbers N, Meyer B K, Hoffmann A, Haboeck U, Wagner M R 2008 Phys. Rev. B 77 144108
[81]	Akasaka S, Nakahara K, Yuji H, Tsukazaki A, Ohtomo A, Kawasaki M 2011 Appl. Phys. Express 4 035701
[82]	Kozuka Y, Tsukazaki A, Kawasaki M 2014 Appl. Phys. Rev. 1 011303
[83]	Akasaka S, Tsukazaki A, Nakahara K, Ohtomo A, Kawasaki M 2011 Jpn. J. Appl. Phys. 50 080215
[84]	Oba F, Choi M, Togo A, Tanaka I 2011 Sci. Technol. Adv. Mater. 12 034302 Google Scholar
[85]	Ellmer K, Bikowski A 2016 J. Phys. D-Appl. Phys. 49 413002 Google Scholar
[86]	McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101 Google Scholar
[87]	Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 126501 Google Scholar
[88]	Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 165202 Google Scholar
[89]	Oba F, Togo A, Tanaka I, Paier J, Kresse G 2008 Phys. Rev. B 77 245202 Google Scholar
[90]	Oba F, Nishitani S R, Isotani S, Adachi H, Tanaka I 2001 J. Appl. Phys. 90 824 Google Scholar
[91]	Borseth T M, Svensson B G, Kuznetsov A Y, Klason P, Zhao Q X, Willander M 2006 Appl. Phys. Lett. 89 262112 Google Scholar
[92]	Look D C, Leedy K D, Vines L, Svensson B G, Zubiaga A, Tuomisto F, Doutt D R, Brillson L J 2011 Phys. Rev. B 84 115202 Google Scholar
[93]	Vidya R, Ravindran P, Fjellvag H, Svensson B G, Monakhov E, Ganchenkova M, Nieminen R M 2011 Phys. Rev. B 83 045206 Google Scholar
[94]	Ton-That C, Weston L, Phillips M R 2012 Phys. Rev. B 86 115205 Google Scholar
[95]	Alkauskas A, Pasquarello A 2011 Phys. Rev. B 84 125206 Google Scholar
[96]	Knutsen K E, Galeckas A, Zubiaga A, Tuomisto F, Farlow G C, Svensson B G, Kuznetsov A Y 2012 Phys. Rev. B 86 121203 Google Scholar
[97]	Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phys. D-Appl. Phys. 45 195104 Google Scholar
[98]	Kim D H, Lee G W, Kim Y C 2012 Solid State Commun. 152 1711 Google Scholar
[99]	Travlos A, Boukos N, Chandrinou C, Kwack H S, Dang L S 2009 J. Appl. Phys. 106 104307 Google Scholar
[100]	Selim F A, Weber M H, Solodovnikov D, Lynn K G 2007 Phys. Rev. Lett. 99 085502 Google Scholar
[101]	Erhart P, Albe K 2006 Appl. Phys. Lett. 88 201918 Google Scholar
[102]	Vlasenko L S, Watkins G D 2005 Phys. Rev. B 72 035203 Google Scholar
[103]	Liu H Y, Izyumskaya N, Avrutin V 2012 J. Appl. Phys. 112 033706 Google Scholar
[104]	Liu L, Xu J L, Wang D D, Jiang M M, Wang S P, Li B H, Zhang Z Z, Zhao D X, Shan C X, Yao B, Shen D Z 2012 Phys. Rev. Lett. 108 215501 Google Scholar
[105]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2017 J. Phys. D-Appl. Phys. 50 325304 Google Scholar
[106]	Sanyal D, Roy T K, Chakrabarti M, Dechoudhury S, Bhowmick D, Chakrabarti A 2008 J. Phys.-Condes. Matter 20 045217 Google Scholar
[107]	Ono R, Togimitsu T, Sato W 2015 J. Radioanal. Nucl. Chem. 303 1223 Google Scholar
[108]	Khan E H, Weber M H, McCluskey M D 2013 Phys. Rev. Lett. 111 017401 Google Scholar
[109]	Makkonen I, Korhonen E, Prozheeva V, Tuomisto F 2016 J. Phys.-Condes. Matter 28 224002 Google Scholar
[110]	Chakrabarti M, Jana D, Sanyal D 2013 Vacuum 87 16 Google Scholar
[111]	Sarkar A, Chakrabarti M, Ray S K, Bhowmick D, Sanyal D 2011 J. Phys.-Condes. Matter 23 155801 Google Scholar
[112]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Zuniga-Perez J, Munoz-Sanjose V 2007 Phys. Rev. B 75 205305 Google Scholar
[113]	Chen Z Q, Betsuyaku K, Kawasuso A 2008 Phys. Rev. B 77 113204 Google Scholar
[114]	Erdem E 2017 Nanoscale 9 10983 Google Scholar
[115]	Lambrecht W R L, Boonchun A 2013 Phys. Rev. B 87 195207 Google Scholar
[116]	Parashar S K S, Murty B S, Repp S, Weber S, Erdem E 2012 J. Appl. Phys. 111 113712 Google Scholar
[117]	Vlasenko L S 2010 Appl. Magn. Reson. 39 103 Google Scholar
[118]	Vlasenko L S 2009 Physica B 404 4774 Google Scholar
[119]	Zheng H, Weismann A, Berndt R 2013 Phys. Rev. Lett. 110 226101 Google Scholar
[120]	Xu H, Dong L, Shi X Q, Van Hove M A, Ho W K, Lin N, Wu H S, Tong S Y 2014 Phys. Rev. B 89 235403 Google Scholar
[121]	Stavale F, Nilius N, Freund H J 2013 J. Phys. Chem. Lett. 4 3972 Google Scholar
[122]	Dulub O, Boatner L A, Diebold U 2002 Surf. Sci. 519 201 Google Scholar
[123]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 053516 Google Scholar
[124]	Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943 Google Scholar
[125]	Dong Y F, Tuomisto F, Svensson B G, Kuznetsov A Y, Brillson L J 2010 Phys. Rev. B 81 081201 Google Scholar
[126]	Reshchikov M A 2014 J. Appl. Phys. 115 012010 Google Scholar
[127]	Zhu L C, Lockrey M, Phillips M R, Cuong T T 2018 Phys. Status Solidi A-Appl. Mat. 215 1800389 Google Scholar
[128]	Wu X L, Siu G G, Fu C L, Ong H C 2001 Appl. Phys. Lett. 78 2285 Google Scholar
[129]	Liu X Y, Shan C X, Zhu H, Li B H, Jiang M M, Yu S F, Shen D Z 2015 Sci. Rep. 5 13641 Google Scholar
[130]	Zhu H, Shan C X, Li B H, Zhang Z Z, Shen D Z, Choy K L 2011 J. Mater. Chem. 21 2848 Google Scholar
[131]	McCluskey M D, Corolewski C D, Lv J P, Tarun M C, Teklemichael S T, Walter E D, Norton M G, Harrison K W, Ha S 2015 J. Appl. Phys. 117 112802 Google Scholar
[132]	Fan J C, Sreekanth K M, Xie Z, Chang S L, Rao K V 2013 Prog. Mater. Sci. 58 874 Google Scholar
[133]	Reynolds J G, Reynolds C L 2014 Adv. Condens. Matter Phys. 2014 457058
[134]	Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu S F, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M 2005 Nat. Mater. 4 42
[135]	Jiao S J, Zhang Z Z, Lu Y M, Shen D Z, Yao B, Zhang J Y, Li B H, Zhao D X, Fan X W, Tang Z K 2006 Appl. Phys. Lett. 88 031911 Google Scholar
[136]	Chu S, Olmedo M, Yang Z, Kong J Y, Liu J L 2008 Appl. Phys. Lett. 93 181106 Google Scholar
[137]	Chu S, Wang G P, Zhou W H, Lin Y Q, Chernyak L, Zhao J Z, Kong J Y, Li L, Ren J J, Liu J L 2011 Nat. Nanotechnol. 6 506 Google Scholar
[138]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2018 J. Phys. D-Appl. Phys. 51 225104 Google Scholar
[139]	Stehr J E, Wang X J, Filippov S, Pearton S J, Ivanov I G, Chen W M, Buyanova I A 2013 J. Appl. Phys. 113 103509 Google Scholar
[140]	Yong D Y, He H Y, Tang Z K, Wei S H, Pan B C 2015 Phys. Rev. B 92 235207 Google Scholar
[141]	Chavillon B, Cario L, Renaud A, Tessier F, Chevire F, Boujtita M, Pellegrin Y, Blart E, Smeigh A 2012 J. Am. Chem. Soc. 134 464 Google Scholar
[142]	Ye Z Z, He H P, Jiang L 2018 Nano Energy 52 527 Google Scholar
[143]	Chen A Q, Zhu H, Wu Y Y, Chen M M, Zhu Y, Gui X C, Tang Z K 2016 Adv. Funct. Mater. 26 3696 Google Scholar
[144]	Sun F, Shan C X, Li B H, Zhang Z Z, Shen D Z, Zhang Z Y, Fan D 2011 Opt. Lett. 36 499 Google Scholar
[145]	Liu J S, Shan C X, Shen H, Li B H, Zhang Z Z, Liu L, Zhang L G, Shen D Z 2012 Appl. Phys. Lett. 101 011106 Google Scholar

施引文献

图 1 ZnO外延生长过程中缓冲层的RHEED线条图像演变过程　(a)氧等离子体处理后的蓝宝石(0001)表面; (b) 二维成核阶段的MgO缓冲层表面; (c) MgO缓冲层开始三维成岛状生长; (d) 薄层低温ZnO缓冲层生长在MgO上; (e) 退火后的ZnO缓冲层表现出平整二维表面^[9]

Fig. 1. Evolution of RHEED line image of buffer layer during epitaxial growth of ZnO: (a) Oxygen plasma treated sapphire (0001) surface; (b) MgO buffer layer surface in two-dimensional nucleation stage; (c) the MgO buffer layer begins to grow into three-dimensional islands; (d) thin layer low temperature ZnO buffer layer grown on MgO; (e) annealed ZnO buffer layer exhibits a flat two-dimensional surface^[9]

下载: 全尺寸图片幻灯片

图 2 ZnO在c面蓝宝石上的原子排列示意图　(a)厚度为1 nm的MgO缓冲层; (b)厚度大于3 nm的MgO缓冲层^[14]

Fig. 2. Schematic diagram of atomic arrangement of ZnO on c-sapphire: (a) MgO buffer layer with a thickness of 1 nm; (b) MgO buffer layer with a thickness greater than 3 nm^[14]

下载: 全尺寸图片幻灯片

图 3 ZnO与GaN异质界面的STEM图像, 通过Zn束流保护, 获得了清晰陡峭的界面, 保证了外延层的Zn极性均一^[17]

Fig. 3. The STEM image of the hetero interface between ZnO and GaN, and it is protected by Zn beam, which obtains a clear and sharp interface and ensures uniformity of Zn polarity in the epitaxial layer^[17]

下载: 全尺寸图片幻灯片

图 4 N掺杂MgZnO薄膜原子力图像, 粗糙度为0.72 nm^[29]

Fig. 4. Atomic force image of N-doped MgZnO film with roughness of 0.72 nm^[29]

下载: 全尺寸图片幻灯片

图 5 II族氧化物半导体带隙与晶格常数关系

Fig. 5. Relationship between band gap and lattice constant of group II oxide semiconductors.

下载: 全尺寸图片幻灯片

图 6 (a), (b)二维电子气系统中应变层应力类型与压电极化方向; (c) BeMgZnO体系下应变类型随组分比例的变化情况^[56]

Fig. 6. (a), (b) Strain stress type and piezoelectric polarization direction in two-dimensional electron gas system; (c) variation of strain type with composition ratio in BeMgZnO system^[56]

下载: 全尺寸图片幻灯片

图 7 ZnO薄膜中杂质浓度的深度分布情况　(a)非故意掺杂层中Si, Mo, Ta, Al的分布情况; (b)氮掺杂层中C, B, N, Cl, F的分布情况; (c) 施主型杂质元素经抑制后的纵向分布情况^[79]

Fig. 7. Depth distribution of impurity concentration in ZnO thin films: (a) Distribution of Si, Mo, Ta and Al in unintentionally doped layers; (b) longitudinal distribution of donor-type impurity elements after suppression^[79]

下载: 全尺寸图片幻灯片

图 8 ZnO单晶衬底上外延层中杂质元素的SIMS数据^[80]

Fig. 8. SIMS data of impurity elements in epitaxial layers on ZnO single crystal substrates^[80]

下载: 全尺寸图片幻灯片

图 9 极性面ZnO单晶衬底在氧环境下经1150 ℃退火1h前后, 杂质种类及含量变化情况^[23]

Fig. 9. Changes in impurity types and contents of O-polar ZnO single crystal substrate after annealing at 1150 ℃ for 1 hour in an oxygen atmosphere^[23]

下载: 全尺寸图片幻灯片

图 10 (a)稀盐酸刻蚀后的ZnO单晶Zn极性表面; (b)稀盐酸刻蚀前后, Si元素的深度分布^[81,82]

Fig. 10. (a) Zn polar surface of ZnO single crystal after being etched by dilute hydrochloric acid; (b) depth distribution of Si element before and after being etched dilute hydrochloric acid^[81,82]

下载: 全尺寸图片幻灯片

图 11 沿极性表面外延时, Zn极性与O极性表面极化电荷分布情况以及利用光生非平衡载流子构建Zn极性表面层富电子环境^[17]

Fig. 11. Zn polar and O polar surface polarized charge distribution along epitaxial surface and Zn polar surface layer rich electronic environment using photogenerated unbalanced carriers^[17]

下载: 全尺寸图片幻灯片

图 12 Zn极性表面(2 × 2) + V_Zn重构的STM图像及结构示意图^[105]

Fig. 12. STM image and structure diagram of Zn polar surface (2 × 2) + V_Zn reconstruction^[105]

下载: 全尺寸图片幻灯片

[1]	Prakash V, Agarwal A, Mussada E K 2019 Silicon 11 1617 Google Scholar
[2]	Neubert M, Rudolph P 2001 Prog. Cryst. Growth Charact. Mater. 43 119 Google Scholar
[3]	Mullin J B 2004 J. Cryst. Growth 264 578 Google Scholar
[4]	Nakamura S 2015 Rev. Mod. Phys. 87 1139 Google Scholar
[5]	Akasaki I 2015 Rev. Mod. Phys. 87 1119 Google Scholar
[6]	Amano H 2015 Rev. Mod. Phys. 87 1133 Google Scholar
[7]	Liang Y H, Towe E 2018 Appl. Phys. Rev. 5 011107 Google Scholar
[8]	Walsh A, Zunger A 2017 Nat. Mater. 16 964 Google Scholar
[9]	Chen Y F, Ko H J, Hong S K, Yao T, Segawa Y 2000 J. Cryst. Growth 214 87 Google Scholar
[10]	Chen Y F, Ko H J, Hong S K, Yao T 2000 Appl. Phys. Lett. 76 559 Google Scholar
[11]	Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara K, Tanabe T, Takasu H 2000 Appl. Phys. Lett. 77 1801 Google Scholar
[12]	Fons P, Iwata K, Niki S, Yamada A, Matsubara K, Watanabe M 2000 J. Cryst. Growth 209 532 Google Scholar
[13]	Liu J S, Shan C X, Wang S P, Sun F, Yao B, Shen D Z 2010 J. Cryst. Growth 312 2861 Google Scholar
[14]	Kato H, Miyamoto K, Sano M, Yao T 2004 Appl. Phys. Lett. 84 4562 Google Scholar
[15]	Hong S K, Hanada T, Ko H J, Chen Y F, Yao T, Imai D, Araki K, Shinohara M, Saitoh K, Terauchi M 2002 Phys. Rev. B 65 115331 Google Scholar
[16]	Park J S, Hong S K, Minegishi T, Park S H, Im I H, Hanada T, Cho M W, Yao T, Lee J W, Lee J Y 2007 Appl. Phys. Lett. 90 201907 Google Scholar
[17]	Xie X H, Li B H, Zhang Z Z, Wang S P, Shen D Z 2018 Sci. Rep. 8 17020 Google Scholar
[18]	Helbig R 1972 J. Cryst. Growth. 15 25 Google Scholar
[19]	Look D C, Reynolds D C, Sizelove J R, Jones R L, Litton C W, Cantwell G, Harsch W C 1998 Solid State Commun. 105 399 Google Scholar
[20]	Ohshima E, Ogino H, Niikura I, Maeda K, Sato M, Ito M, Fukuda T 2004 J. Cryst. Growth 260 166 Google Scholar
[21]	Maeda K, Sato M, Niikura I, Fukuda T 2005 Semicond. Sci. Technol. 20 S49 Google Scholar
[22]	Ehrentraut D, Maeda K, Kano M, Fujii K, Fukuda T 2011 J. Cryst. Growth 320 18 Google Scholar
[23]	Graubner S, Neumann C, Volbers N, Meyer B K, Blasing J, Krost A 2007 Appl. Phys. Lett. 90 042103 Google Scholar
[24]	Takamizu D, Nishimoto Y, Akasaka S, Yuji H, Tamura K, Nakahara K, Onuma T, Tanabe T, Takasu H, Kawasaki M, Chichibu S F 2008 J. Appl. Phys. 103 063502 Google Scholar
[25]	Kato H, Sano M, Miyamoto K, Yao T 2003 Jpn. J. Appl. Phys. Part 2-Lett. 42 L1002 Google Scholar
[26]	Kato H, Sano M, Miyamoto K, Yao T 2003 Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap. 42 2241 Google Scholar
[27]	Park S H, Minegishi T, Lee H J, Oh D C, Ko H J, Chang J H, Yao T 2011 J. Appl. Phys. 110 053520 Google Scholar
[28]	Tsukazaki A, Akasaka S, Nakahara K, Ohno Y, Ohno H, Maryenko D, Ohtomo A, Kawasaki M 2010 Nat. Mater. 9 889 Google Scholar
[29]	Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501 Google Scholar
[30]	Makino T, Segawa Y, Kawasaki M, Ohtomo A, Shiroki R, Tamura K, Yasuda T, Koinuma H 2001 Appl. Phys. Lett. 78 1237 Google Scholar
[31]	Choopun S, Vispute R D, Yang W, Sharma R P, Venkatesan T, Shen H 2002 Appl. Phys. Lett. 80 1529 Google Scholar
[32]	Sharma A K, Narayan J, Muth J F, Teng C W, Jin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 75 3327 Google Scholar
[33]	Teng C W, Muth J F, Ozgur U, Bergmann M J, Everitt H O, Sharma A K, Jin C, Narayan J 2000 Appl. Phys. Lett. 76 979 Google Scholar
[34]	Coli G, Bajaj K K 2001 Appl. Phys. Lett. 78 2861 Google Scholar
[35]	Ohtomo A, Shiroki R, Ohkubo I, Koinuma H, Kawasaki M 1999 Appl. Phys. Lett. 75 4088 Google Scholar
[36]	Vashaei Z, Minegishi T, Suzuki H, Hanada T, Cho M W, Yao T, Setiawan A 2005 J. Appl. Phys. 98 054911 Google Scholar
[37]	Tanaka H, Fujita S, Fujita S 2005 Appl. Phys. Lett. 86 192911 Google Scholar
[38]	Zheng Q H, Huang F, Ding K, Huang J, Chen D G, Zhan Z B, Lin Z 2011 Appl. Phys. Lett. 98 221112 Google Scholar
[39]	Wang L K, Ju Z G, Zhang J Y, Zheng J, Shen D Z, Yao B, Zhao D X, Zhang Z Z, Li B H, Shan C X 2009 Appl. Phys. Lett. 95 131113 Google Scholar
[40]	Xie X H, Zhang Z Z, Li B H, Wang S P, Jiang M M, Shan C X, Zhao D X, Chen H Y, Shen D Z 2014 Opt. Express 22 246 Google Scholar
[41]	Ju Z G, Shan C X, Yang C L, Zhang J Y, Yao B, Zhao D X, Shen D Z, Fan X W 2009 Appl. Phys. Lett. 94 101902 Google Scholar
[42]	Ju Z G, Shan C X, Jiang D Y, Zhang J Y, Yao B, Zhao D X, Shen D Z, Fan X W 2008 Appl. Phys. Lett. 93 173505 Google Scholar
[43]	Kaneko K, Onuma T, Tsumura K, Uchida T, Jinno R, Yamaguchi T, Honda T, Fujita S 2016 Appl. Phys. Express 9 111102 Google Scholar
[44]	Onuma T, Ono M, Ishii K, Kaneko K, Yamaguchi T, Fujita S, Honda T 2018 Appl. Phys. Lett. 113 061903 Google Scholar
[45]	Kaneko K, Tsumura K, Ishii K, Onuma T, Honda T, Fujita S 2018 J. Electron. Mater. 47 4356 Google Scholar
[46]	Wen M C, Lu S A, Chang L, Chou M M C, Ploog K H 2017 J. Cryst. Growth 477 169 Google Scholar
[47]	Ryu Y R, Lee T S, Lubguban J A, Corman A B, White H W, Leem J H, Han M S, Park Y S, Youn C J, Kim W J 2006 Appl. Phys. Lett. 88 052103 Google Scholar
[48]	Kim W J, Leem J H, Han M S, Ryu Y R, Lee T S 2006 J. Appl. Phys. 99 096104 Google Scholar
[49]	Su L X, Zhu Y, Chen M M, Zhang Q L, Su Y Q, Ji X, Wu T Z, Gui X C, Xiang R, Tang Z K 2013 Appl. Phys. Lett. 103 072104 Google Scholar
[50]	Jeong T S, Han M S, Kim J H, Bae S J, Youn C J 2007 J. Phys. D-Appl. Phys. 40 370 Google Scholar
[51]	Chen M M, Xiang R, Su L X, Zhang Q L, Cao J S, Zhu Y, Gui X C, Wu T Z, Tang Z K 2012 J. Phys. D-Appl. Phys. 45 455101 Google Scholar
[52]	Ye D Q, Mei Z X, Liang H L, Liu Y L, Azarov A, Kuznetsov A, Du X L 2014 J. Phys. D-Appl. Phys. 47 175102 Google Scholar
[53]	Park S H, Ahn D 2014 Physica B 441 12 Google Scholar
[54]	Su L X, Zhu Y, Zhang Q L, Chen M M, Wu T Z, Gui X C, Pan B C, Xiang R, Tang Z K 2013 Appl. Surf. Sci. 274 341 Google Scholar
[55]	Yong D Y, He H Y, Su L X, Zhu Y, Tang Z K, Pan B C 2014 J. Alloys Compd. 608 197 Google Scholar
[56]	Ding K, Ullah M B, Avrutin V, Ozgur U, Morkoc H 2017 Appl. Phys. Lett. 111 182101 Google Scholar
[57]	Gorczyca I, Teisseyre H, Suski T, Christensen N E, Svane A 2016 J. Appl. Phys. 120 215704 Google Scholar
[58]	Toporkov M, Demchenko D O, Zolnai Z, Volk J, Avrutin V, Morkoc H, Ozgur U 2016 J. Appl. Phys. 119 095311 Google Scholar
[59]	Toporkov M, Avrutin V, Okur S, Izyumskaya N, Demchenko D, Volk J, Smith D J, Morkoc H, Ozgur U 2014 J. Cryst. Growth 402 60 Google Scholar
[60]	Yang C, Li X M, Gao X D, Cao X, Yang R, Li Y Z 2010 J. Cryst. Growth 312 978 Google Scholar
[61]	Toporkov M, Ullah M B, Demchenko D O, Avrutin V, Morkoc H, Ozgur U 2017 J. Cryst. Growth 467 145 Google Scholar
[62]	Ullah M B, Avrutin V, Nakagawara T, Hafiz S, Altuntas I, Ozgur U, Morkoc H 2017 J. Appl. Phys. 121 185704 Google Scholar
[63]	Roessler D M, Walker W C 1967 Phys. Rev. 159 733 Google Scholar
[64]	Cordero B, Gomez V, Platero-Prats A E, Reves M, Echeverria J, Cremades E, Barragan F, Alvarez S 2008 Dalton Trans. 21 2832
[65]	Ashrafi A, Jagadish C 2007 J. Appl. Phys. 102 071101 Google Scholar
[66]	Zhu Y, Chen M M, Su L X, Su Y Q, Ji X, Gui X C, Tang Z K 2014 J. Alloys Compd. 616 505 Google Scholar
[67]	Chen M M, Zhu Y, Su L X, Zhang Q L, Chen A Q, Ji X, Xiang R, Gui X C, Wu T Z, Pan B C, Tang Z K 2013 Appl. Phys. Lett. 102 202103 Google Scholar
[68]	Freysoldt C, Grabowski B, Hickel T, Neugebauer J, Kresse G, Janotti A, Van de Walle C G 2014 Rev. Mod. Phys. 86 253 Google Scholar
[69]	Kohan A F, Ceder G, Morgan D, Van de Walle C G 2000 Phys. Rev. B 61 15019 Google Scholar
[70]	Sokol A A, French S A, Bromley S T, Catlow C R A, van Dam H J J, Sherwood P 2007 Faraday Discuss. 134 267 Google Scholar
[71]	Lyons J L, Janotti A, Van de Walle C G 2009 Appl. Phys. Lett. 95 252105 Google Scholar
[72]	Wang L G, Zunger A 2003 Phys. Rev. Lett. 90 256401 Google Scholar
[73]	Duan X M, Stampfl C, Bilek M M M, McKenzie D R 2009 Phys. Rev. B 79 235208 Google Scholar
[74]	Urban D F, Korner W, Elsasser C 2016 Phys. Rev. B 94 075140 Google Scholar
[75]	Puchala B, Morgan D 2012 Phys. Rev. B 85 195207 Google Scholar
[76]	Limpijumnong S, Zhang S B, Wei S H, Park C H 2004 Phys. Rev. Lett. 92 155504 Google Scholar
[77]	Li J, Wei S H, Li S S, Xia J B 2006 Phys. Rev. B 74 081201 Google Scholar
[78]	Gai Y Q, Li J B, Li S S, Xia J B, Yan Y F, Wei S H 2009 Phys. Rev. B 80 153201 Google Scholar
[79]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2018 AIP Adv. 8 035115
[80]	Lautenschlaeger S, Sann J, Volbers N, Meyer B K, Hoffmann A, Haboeck U, Wagner M R 2008 Phys. Rev. B 77 144108
[81]	Akasaka S, Nakahara K, Yuji H, Tsukazaki A, Ohtomo A, Kawasaki M 2011 Appl. Phys. Express 4 035701
[82]	Kozuka Y, Tsukazaki A, Kawasaki M 2014 Appl. Phys. Rev. 1 011303
[83]	Akasaka S, Tsukazaki A, Nakahara K, Ohtomo A, Kawasaki M 2011 Jpn. J. Appl. Phys. 50 080215
[84]	Oba F, Choi M, Togo A, Tanaka I 2011 Sci. Technol. Adv. Mater. 12 034302 Google Scholar
[85]	Ellmer K, Bikowski A 2016 J. Phys. D-Appl. Phys. 49 413002 Google Scholar
[86]	McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101 Google Scholar
[87]	Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 126501 Google Scholar
[88]	Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 165202 Google Scholar
[89]	Oba F, Togo A, Tanaka I, Paier J, Kresse G 2008 Phys. Rev. B 77 245202 Google Scholar
[90]	Oba F, Nishitani S R, Isotani S, Adachi H, Tanaka I 2001 J. Appl. Phys. 90 824 Google Scholar
[91]	Borseth T M, Svensson B G, Kuznetsov A Y, Klason P, Zhao Q X, Willander M 2006 Appl. Phys. Lett. 89 262112 Google Scholar
[92]	Look D C, Leedy K D, Vines L, Svensson B G, Zubiaga A, Tuomisto F, Doutt D R, Brillson L J 2011 Phys. Rev. B 84 115202 Google Scholar
[93]	Vidya R, Ravindran P, Fjellvag H, Svensson B G, Monakhov E, Ganchenkova M, Nieminen R M 2011 Phys. Rev. B 83 045206 Google Scholar
[94]	Ton-That C, Weston L, Phillips M R 2012 Phys. Rev. B 86 115205 Google Scholar
[95]	Alkauskas A, Pasquarello A 2011 Phys. Rev. B 84 125206 Google Scholar
[96]	Knutsen K E, Galeckas A, Zubiaga A, Tuomisto F, Farlow G C, Svensson B G, Kuznetsov A Y 2012 Phys. Rev. B 86 121203 Google Scholar
[97]	Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phys. D-Appl. Phys. 45 195104 Google Scholar
[98]	Kim D H, Lee G W, Kim Y C 2012 Solid State Commun. 152 1711 Google Scholar
[99]	Travlos A, Boukos N, Chandrinou C, Kwack H S, Dang L S 2009 J. Appl. Phys. 106 104307 Google Scholar
[100]	Selim F A, Weber M H, Solodovnikov D, Lynn K G 2007 Phys. Rev. Lett. 99 085502 Google Scholar
[101]	Erhart P, Albe K 2006 Appl. Phys. Lett. 88 201918 Google Scholar
[102]	Vlasenko L S, Watkins G D 2005 Phys. Rev. B 72 035203 Google Scholar
[103]	Liu H Y, Izyumskaya N, Avrutin V 2012 J. Appl. Phys. 112 033706 Google Scholar
[104]	Liu L, Xu J L, Wang D D, Jiang M M, Wang S P, Li B H, Zhang Z Z, Zhao D X, Shan C X, Yao B, Shen D Z 2012 Phys. Rev. Lett. 108 215501 Google Scholar
[105]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2017 J. Phys. D-Appl. Phys. 50 325304 Google Scholar
[106]	Sanyal D, Roy T K, Chakrabarti M, Dechoudhury S, Bhowmick D, Chakrabarti A 2008 J. Phys.-Condes. Matter 20 045217 Google Scholar
[107]	Ono R, Togimitsu T, Sato W 2015 J. Radioanal. Nucl. Chem. 303 1223 Google Scholar
[108]	Khan E H, Weber M H, McCluskey M D 2013 Phys. Rev. Lett. 111 017401 Google Scholar
[109]	Makkonen I, Korhonen E, Prozheeva V, Tuomisto F 2016 J. Phys.-Condes. Matter 28 224002 Google Scholar
[110]	Chakrabarti M, Jana D, Sanyal D 2013 Vacuum 87 16 Google Scholar
[111]	Sarkar A, Chakrabarti M, Ray S K, Bhowmick D, Sanyal D 2011 J. Phys.-Condes. Matter 23 155801 Google Scholar
[112]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Zuniga-Perez J, Munoz-Sanjose V 2007 Phys. Rev. B 75 205305 Google Scholar
[113]	Chen Z Q, Betsuyaku K, Kawasuso A 2008 Phys. Rev. B 77 113204 Google Scholar
[114]	Erdem E 2017 Nanoscale 9 10983 Google Scholar
[115]	Lambrecht W R L, Boonchun A 2013 Phys. Rev. B 87 195207 Google Scholar
[116]	Parashar S K S, Murty B S, Repp S, Weber S, Erdem E 2012 J. Appl. Phys. 111 113712 Google Scholar
[117]	Vlasenko L S 2010 Appl. Magn. Reson. 39 103 Google Scholar
[118]	Vlasenko L S 2009 Physica B 404 4774 Google Scholar
[119]	Zheng H, Weismann A, Berndt R 2013 Phys. Rev. Lett. 110 226101 Google Scholar
[120]	Xu H, Dong L, Shi X Q, Van Hove M A, Ho W K, Lin N, Wu H S, Tong S Y 2014 Phys. Rev. B 89 235403 Google Scholar
[121]	Stavale F, Nilius N, Freund H J 2013 J. Phys. Chem. Lett. 4 3972 Google Scholar
[122]	Dulub O, Boatner L A, Diebold U 2002 Surf. Sci. 519 201 Google Scholar
[123]	Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 053516 Google Scholar
[124]	Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943 Google Scholar
[125]	Dong Y F, Tuomisto F, Svensson B G, Kuznetsov A Y, Brillson L J 2010 Phys. Rev. B 81 081201 Google Scholar
[126]	Reshchikov M A 2014 J. Appl. Phys. 115 012010 Google Scholar
[127]	Zhu L C, Lockrey M, Phillips M R, Cuong T T 2018 Phys. Status Solidi A-Appl. Mat. 215 1800389 Google Scholar
[128]	Wu X L, Siu G G, Fu C L, Ong H C 2001 Appl. Phys. Lett. 78 2285 Google Scholar
[129]	Liu X Y, Shan C X, Zhu H, Li B H, Jiang M M, Yu S F, Shen D Z 2015 Sci. Rep. 5 13641 Google Scholar
[130]	Zhu H, Shan C X, Li B H, Zhang Z Z, Shen D Z, Choy K L 2011 J. Mater. Chem. 21 2848 Google Scholar
[131]	McCluskey M D, Corolewski C D, Lv J P, Tarun M C, Teklemichael S T, Walter E D, Norton M G, Harrison K W, Ha S 2015 J. Appl. Phys. 117 112802 Google Scholar
[132]	Fan J C, Sreekanth K M, Xie Z, Chang S L, Rao K V 2013 Prog. Mater. Sci. 58 874 Google Scholar
[133]	Reynolds J G, Reynolds C L 2014 Adv. Condens. Matter Phys. 2014 457058
[134]	Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu S F, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M 2005 Nat. Mater. 4 42
[135]	Jiao S J, Zhang Z Z, Lu Y M, Shen D Z, Yao B, Zhang J Y, Li B H, Zhao D X, Fan X W, Tang Z K 2006 Appl. Phys. Lett. 88 031911 Google Scholar
[136]	Chu S, Olmedo M, Yang Z, Kong J Y, Liu J L 2008 Appl. Phys. Lett. 93 181106 Google Scholar
[137]	Chu S, Wang G P, Zhou W H, Lin Y Q, Chernyak L, Zhao J Z, Kong J Y, Li L, Ren J J, Liu J L 2011 Nat. Nanotechnol. 6 506 Google Scholar
[138]	Xie X H, Li B H, Zhang Z Z, Shen D Z 2018 J. Phys. D-Appl. Phys. 51 225104 Google Scholar
[139]	Stehr J E, Wang X J, Filippov S, Pearton S J, Ivanov I G, Chen W M, Buyanova I A 2013 J. Appl. Phys. 113 103509 Google Scholar
[140]	Yong D Y, He H Y, Tang Z K, Wei S H, Pan B C 2015 Phys. Rev. B 92 235207 Google Scholar
[141]	Chavillon B, Cario L, Renaud A, Tessier F, Chevire F, Boujtita M, Pellegrin Y, Blart E, Smeigh A 2012 J. Am. Chem. Soc. 134 464 Google Scholar
[142]	Ye Z Z, He H P, Jiang L 2018 Nano Energy 52 527 Google Scholar
[143]	Chen A Q, Zhu H, Wu Y Y, Chen M M, Zhu Y, Gui X C, Tang Z K 2016 Adv. Funct. Mater. 26 3696 Google Scholar
[144]	Sun F, Shan C X, Li B H, Zhang Z Z, Shen D Z, Zhang Z Y, Fan D 2011 Opt. Lett. 36 499 Google Scholar
[145]	Liu J S, Shan C X, Shen H, Li B H, Zhang Z Z, Liu L, Zhang L G, Shen D Z 2012 Appl. Phys. Lett. 101 011106 Google Scholar

[1]	郑世姣, 杨文跃, 杨致, 徐利春, 冯琳, 陈波, 薛林. 单层Z-Bi₂O₂Se本征点缺陷及光电性能研究. 物理学报, 2025, 74(12): . doi: 10.7498/aps.74.20241701
[2]	闫丽彬, 白雨蓉, 李培, 柳文波, 何欢, 贺朝会, 赵小红. InP中点缺陷迁移机制的第一性原理计算. 物理学报, 2024, 73(18): 183101. doi: 10.7498/aps.73.20240754
[3]	吕永杰, 陈燕, 叶方成, 蔡李彬, 戴子杰, 任云鹏. 外加电场和B/N掺杂对锡烯带隙的影响. 物理学报, 2024, 73(8): 083101. doi: 10.7498/aps.73.20231935
[4]	马荣荣, 马晨蕊, 葛梅, 郭世祺, 张均锋. 单层蓝磷带电点缺陷的结构稳定性及电子性质. 物理学报, 2024, 73(13): 137301. doi: 10.7498/aps.73.20240011
[5]	邓晨华, 于忠海, 王宇涛, 孔森, 周超, 杨森. Ti掺杂Nd₂Fe₁₄B/α-Fe纳米双相复合永磁体晶化动力学. 物理学报, 2023, 72(2): 027501. doi: 10.7498/aps.72.20221479
[6]	智文强, 费宏明, 韩雨辉, 武敏, 张明达, 刘欣, 曹斌照, 杨毅彪. 漏斗型完全光子带隙光波导单向传输. 物理学报, 2022, 71(3): 038501. doi: 10.7498/aps.71.20211299
[7]	智文强, 费宏明, 韩雨辉, 武敏, 张明达, 刘欣, 曹斌照, 杨毅彪. 漏斗型完全光子带隙光波导单向传输研究. 物理学报, 2021, (): . doi: 10.7498/aps.70.20211299
[8]	张华林, 何鑫, 张振华. 过渡金属原子掺杂的锯齿型磷烯纳米带的磁电子学特性. 物理学报, 2021, 70(5): 056101. doi: 10.7498/aps.70.20201408
[9]	王冠仕, 林彦明, 赵亚丽, 姜振益, 张晓东. (Cu,N)共掺杂TiO₂/MoS₂异质结的电子和光学性能:杂化泛函HSE06. 物理学报, 2018, 67(23): 233101. doi: 10.7498/aps.67.20181520
[10]	张越, 赵剑, 董鹏, 田达晰, 梁兴勃, 马向阳, 杨德仁. 掺杂剂对重掺n型直拉硅片的氧化诱生层错生长的影响. 物理学报, 2015, 64(9): 096105. doi: 10.7498/aps.64.096105
[11]	刘海云, 刘湘涟, 田定琪, 杜正良, 崔教林. 含硫宽禁带Ga2Te3基热电半导体的声电输运特性. 物理学报, 2015, 64(19): 197201. doi: 10.7498/aps.64.197201
[12]	曹永军, 谭伟, 刘燕. 二维磁振子晶体中点缺陷模的耦合性质研究. 物理学报, 2012, 61(11): 117501. doi: 10.7498/aps.61.117501
[13]	胡小会, 许俊敏, 孙立涛. 金掺杂锯齿型石墨烯纳米带的电磁学特性研究. 物理学报, 2012, 61(4): 047106. doi: 10.7498/aps.61.047106
[14]	吉川, 徐进. 点缺陷对硼掺杂直拉硅单晶p/p+ 外延片中铜沉淀的影响. 物理学报, 2012, 61(23): 236102. doi: 10.7498/aps.61.236102
[15]	魏琦, 程营, 刘晓峻. 点缺陷阵列对声子晶体波导定向辐射性能的影响. 物理学报, 2011, 60(12): 124301. doi: 10.7498/aps.60.124301
[16]	吴红丽, 赵新青, 宫声凯. Nb掺杂影响NiTi金属间化合物电子结构的第一性原理计算. 物理学报, 2010, 59(1): 515-520. doi: 10.7498/aps.59.515
[17]	敖冰云, 汪小琳, 陈丕恒, 史鹏, 胡望宇, 杨剑瑜. 嵌入原子法计算金属钚中点缺陷的能量. 物理学报, 2010, 59(7): 4818-4825. doi: 10.7498/aps.59.4818
[18]	马新国, 江建军, 梁培. 锐钛矿型TiO2(101)面本征点缺陷的理论研究. 物理学报, 2008, 57(5): 3120-3125. doi: 10.7498/aps.57.3120
[19]	宜晨虹, 慕青松, 苗天德. 带有点缺陷的二维颗粒系统离散元模拟. 物理学报, 2008, 57(6): 3636-3640. doi: 10.7498/aps.57.3636
[20]	胡晓君, 李荣斌, 沈荷生, 何贤昶, 邓文, 罗里熊. 掺杂金刚石薄膜的缺陷研究. 物理学报, 2004, 53(6): 2014-2018. doi: 10.7498/aps.53.2014

计量

文章访问数: 15943
PDF下载量: 323
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板

点缺陷调控: 宽禁带II族氧化物半导体的机遇与挑战