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二维XO2 (X = Ni, Pd, Pt)弹性、电子结构和热导率

方文玉 陈粤 叶盼 魏皓然 肖兴林 黎明锴 AhujaRajeev 何云斌

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二维XO2 (X = Ni, Pd, Pt)弹性、电子结构和热导率

方文玉, 陈粤, 叶盼, 魏皓然, 肖兴林, 黎明锴, AhujaRajeev, 何云斌

Elastic constants, electronic structures and thermal conductivity of monolayer XO2 (X = Ni, Pd, Pt)

Fang Wen-Yu, Chen Yue, Ye Pan, Wei Hao-Ran, Xiao Xing-Lin, Li Ming-Kai, Ahuja Rajeev, He Yun-Bin
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  • 基于第一性原理计算方法, 研究了二维XO2 (X = Ni, Pd, Pt)的稳定性、弹性、电子结构和热导率. 计算结果显示, 二维XO2同时具备较好的机械和动力学稳定性. 此外, 二维NiO2, PdO2和PtO2的杨氏模量分别为124.69 N/m, 103.31 N/m和116.51 N/m, 泊松比分别为0.25, 0.24和0.27, 并呈现各向同性. 电子能带结构表明, 二维XO2 (X = Ni, Pd, Pt)为间接带隙半导体, 计算能隙分别为2.95 eV, 3.00 eV和3.34 eV, 且价带顶和导带底的能级主要由Ni-3d, Pd-4d, Pt-5d和O-2p轨道电子组成. 通过畸变势理论计算载流子迁移率, 结果显示二维XO2 (X = Ni, Pd, Pt)沿armchair和zigzag方向的有效质量和形变势表现出明显的各向异性, 电子/空穴的迁移率最高分别为13707.96/53.25 cm2·V–1·s–1, 1288.12/19.18 cm2·V–1·s–1和404.71/270.60 cm2·V–1·s–1. 此外, 在300 K温度下, 二维XO2 (X = Ni, Pd, Pt)的晶格热导率分别为53.55 W·m–1·K–1, 19.06 W·m–1·K–1和17.43 W·m–1·K–1, 这表明二维XO2 (X = Ni, Pd, Pt)在纳米电子材料和导热器件方面具备应用潜力.
    Based on the first-principles calculations, the stability, elastic constants, electronic structure, and lattice thermal conductivity of monolayer XO2 (X = Ni, Pd, Pt) are investigated in this work. The results show that XO2 (X = Ni, Pd, Pt) have mechanical and dynamic stability at the same time. In addition, the Young’s modulus of monolayer NiO2, PdO2 and PtO2 are 124.69 N·m–1, 103.31 N·m–1 and 116.51 N·m–1, Poisson’s ratio of monolayer NiO2, PdO2 and PtO2 are 0.25, 0.24 and 0.27, respectively, and each of them possesses high isotropy. The band structures show that monolayer XO2 (X = Ni, Pd, Pt) are indirect band-gap semiconductors with energy gap of 2.95 eV, 3.00 eV and 3.34 eV, respectively, and the energy levels near the valence band maximum and conduction band minimum are mainly composed of Ni-3d/Pd-4d/Pt-5d and O-2p orbital electrons. Based on deformation potential theory, the carrier mobility of each monolayer is calculated, and the results show that the effective mass and deformation potential of monolayer XO2 (X = Ni, Pd, Pt) along the armchair and zigzag directions show obvious anisotropy, and the highest electron and hole mobility are 13707.96 and 53.25 cm2·V–1·s–1, 1288.12 and 19.18 cm2·V–1·s–1, and 404.71 and 270.60 cm2·V–1·s–1 for NiO2, PdO2 and PtO2, respectively. Furthermore, the lattice thermal conductivity of monolayer XO2 (X = Ni, Pd, Pt) at 300 K are 53.55 W·m–1·K–1, 19.06 W·m–1·K–1 and 17.43 W·m–1·K–1, respectively. These properties indicate that monolayer XO2 (X = Ni, Pd, Pt) have potential applications in nanometer electronic materials and thermal conductivity devices.
      通信作者: 黎明锴, mkli@hubu.edu.cn ; 何云斌, ybhe@hubu.edu.cn
    • 基金项目: 国家自然科学基金(批准号: 61874040, 11774082, 11975093)、国家重点研发计划(批准号: 2019YFB1503500)、湖北省自然科学基金创新研究群体(批准号: 2019CFA006)和湖北省高等学校优秀中青年科技创新团队计划(批准号: T201901)
      Corresponding author: Li Ming-Kai, mkli@hubu.edu.cn ; He Yun-Bin, ybhe@hubu.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61874040, 11774082, 11975093), the National Key R&D Program of China (Grant No. 2019YFB1503500), the Creative Research Groups of Natural Science Foundation of Hubei Province, China (Grant No. 2019CFA006), and the Program for Science and Technology Innovation Team in Colleges of Hubei Province, China (Grant No. T201901)
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  • 图 1  二维XO2 (X = Ni, Pd, Pt)的晶体结构 (a) 俯视图; (b), (c) 侧视图; (d) K点路径

    Fig. 1.  Crystal structures of monolayer XO2 (X = Ni, Pd, Pt): (a) Top view; (b), (c) side view; (d) K points path.

    图 2  不同相结构的XO2的结合能 (a) NiO2; (b) PdO2; (c) PtO2

    Fig. 2.  Binding energies of XO2 with different phase structures: (a) NiO2; (b) PdO2; (c) PtO2.

    图 3  二维XO2 (X = Ni, Pd, Pt)的(a) 杨氏模量、(b) 泊松比和 (c) 应力-应变曲线

    Fig. 3.  (a) Young's modulus, (b) Poisson's ratio, and (c) stress-strain curves of monolayer XO2 (X = Ni, Pd, Pt).

    图 4  二维XO2 (X = Ni, Pd, Pt)电子局域函数 (a) NiO2; (b) PdO2; (c) PtO2

    Fig. 4.  Electron localization functions (ELFs) of (a) NiO2, (b) PdO2, (c) PtO2 plotted in a 2 × 2 × 1 supercell.

    图 5  二维XO2 (X = Ni, Pd, Pt)能带结构和分波态密度 (a) NiO2; (b) PdO2; (c) PtO2

    Fig. 5.  Band structures and density of states of monolayer XO2 (X = Ni, Pd, Pt) (a) NiO2; (b) PdO2; (c) PtO2.

    图 6  二维XO2 (X = Ni, Pd, Pt)平面刚度和形变势拟合曲线 (a)−(c) NiO2; (d)−(f) PdO2; (g)−(i) PtO2. (a), (d), (g)能量对单轴应变的二次项拟合来计算平面刚度; (b)和(c), (e)和(f), (h)和(i) 沿扶手椅和之字形方向价带顶和导带底的能量对应变量的线性拟合, 用于计算变形势

    Fig. 6.  Schematic diagram of plane stiffness and deformation potential of monolayer XO2 (X = Ni, Pd, Pt): (a)−(c) NiO2; (d)−(f) PdO2; (g)−(i) PtO2. (a), (d), (g) Quadratic fitting of the energy difference to the uniaxial strain are used to calculate the plane stiffness. (b) and (c), (e) and (f), (h) and (i) Linear fitting of the energy of VBM and CBM relative to the uniaxial strain along armchair and zigzag direction, which are used to calculate the deformation potential.

    图 7  二维XO2 (X = Ni, Pd, Pt)的(a)−(c) 声子谱、(d)−(f) 声子群速度和 (g)−(i) 声子寿命

    Fig. 7.  (a)−(c) Phonon dispersion, (d)−(f) group velocities and (g)−(i) phonon lifetimes of monolayer XO2 (X = Ni, Pd, Pt)

    图 8  二维XO2 (X = Ni, Pd, Pt)的晶格热导率

    Fig. 8.  Lattice thermal conductivity of monolayer XO2 (X = Ni, Pd, Pt).

    表 1  二维XO2 (X = Ni, Pd, Pt)结构参数和结合能

    Table 1.  Structure parameters and binding energies of monolayer XO2 (X = Ni, Pd, Pt).

    Monolayersa/blθ1/(°)θ2/(°)hEf/(eV·atom–1)Band gap/eV
    PBEPBE + SOCHSE06
    NiO22.821.8896.8483.161.905.781.391.212.95
    PdO23.072.0398.5481.461.964.931.501.403.00
    PtO23.132.0599.6480.341.935.771.831.733.34
    下载: 导出CSV

    表 2  在300 K下, 二维XO2 (X = Ni, Pd, Pt)的有效质量(m*)、弹性模量(C 2D)、形变势(El)、电子和空穴迁移率(μ)

    Table 2.  Calculated effective mass (m*), elastic modulus (C 2D), deformation-potential constant (El), electron and hole mobility (μ) of monolayer XO2 (X = Ni, Pd, Pt) at 300 K.

    MaterialsDirectionCarrier typem*/m0C 2D/(N·m–1)El/eVμ/(cm2·V–1·s–1)
    NiO2ArmchairElectron0.63134.810.5613707.96
    Hole2.002.2953.25
    ZigzagElectron1.80135.210.881944.53
    Hole13.192.268.32
    PdO2ArmchairElectron0.81113.381.281288.12
    Hole2.523.0219.18
    ZigzagElectron2.42114.252.10162.17
    Hole11.813.014.16
    PtO2ArmchairElectron0.80122.604.27404.71
    Hole1.171.51270.60
    ZigzagElectron2.51123.254.2740.46
    Hole8.771.5140.86
    BPa-axisElectron0.1724.811.592652.06
    Hole0.162.66495.37
    b-axisElectron1.25105.455.27140.35
    Hole5.710.1324469.72
    下载: 导出CSV
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    Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666Google Scholar

    [2]

    Wang D, Song X L, Li P, Gao X J J, Gao X F 2020 J. Mater. Chem. B 8 9028Google Scholar

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    Halo M, Casassa S, Maschio L, Pisani C, Dovesi R, Ehinon D, Baraille I, Rerat M, Usvyat D 2011 Phys. Chem. Chem. Phys. 13 4434Google Scholar

    [4]

    Zhou M F, Wang W H, Lu J P, Ni Z H 2021 Nano Res. 14 29Google Scholar

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    Fang W Y, Kang W B, Zhao J, Zhang P C 2020 Chin. Phys. B 29 096301Google Scholar

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    [7]

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    Yang Y, Zhang H, Song L H, Liu Z L 2021 Appl. Surf. Sci. 542 148691Google Scholar

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    Chaurasiya R, Dixit A, Pandey R 2019 J. Appl. Phys. 125 082540Google Scholar

    [23]

    Ersan F, Ozaydin H D, Gokoglu G, Akturk E 2017 Appl. Surf. Sci. 425 301Google Scholar

    [24]

    Cakir D, Peeters F M, Sevik C 2014 Appl. Phys. Lett. 104 203110Google Scholar

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    Shukla A, Gaur N K 2020 Chem. Phys. Lett. 754 137717Google Scholar

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    Shang J, Li C, Tang X, Du A J, Liao T, Gu Y T, Ma Y D, Kou L Z, Chen C F 2020 Nanoscale 12 14847Google Scholar

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    Mohammed H A H, Dongho-Nguimdo G M, Joubert D P 2021 Physica E 127 114514Google Scholar

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    Lei Z H, Wang W L, She J C 2021 Chin. Phys. B 30 047102Google Scholar

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出版历程
  • 收稿日期:  2021-05-28
  • 修回日期:  2021-09-05
  • 上网日期:  2021-09-07
  • 刊出日期:  2021-12-20

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