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GaN厚膜中的质子辐照诱生缺陷研究

张明兰 杨瑞霞 李卓昕 曹兴忠 王宝义 王晓晖

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GaN厚膜中的质子辐照诱生缺陷研究

张明兰, 杨瑞霞, 李卓昕, 曹兴忠, 王宝义, 王晓晖

Study on proton irradiation induced defects in GaN thick film

Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui
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  • 本文采用正电子湮没谱研究质子辐照诱生缺陷, 实验发现: 能量为5 MeV的质子辐照在GaN厚膜中主要产生的是Ga单空位, 没有双空位或者空位团形成; 在10 K测试的低温光致发光谱中, 带边峰出现了"蓝移", 辐照后黄光带的发光强度减弱, 说明黄光带的起源与Ga空位(VGa)之间不存在必然的联系, 各激子发光峰位置没有改变, 仅强度随质子注量发生变化; 样品(0002)面双晶XRD扫描曲线的半峰宽在辐照后明显增大, 说明质子辐照对晶格的周期性产生了影响, 薄膜晶体质量下降.
    Proton-irradiation-induced defects threaten seriously the stable performance of GaN-based devices in harsh environments, such as outer space. It is therefore urgent to understand the behaviors of proton-irradiation-induced defects for improving the radiation tolerance of GaN-based devices. Positron annihilation spectroscopy (PAS) has been used to study proton-induced defects in GaN grown by HVPE. The result shows that VGa is the main defects and no (VGaVN) or (VGaVN)2 is formed in 5 MeV proton-irradiated GaN. Photoluminescence (PL) spectrum is carried out at 10K. After irradiation, the band edge shows a blue-shift, but the donor-acceptor pair (DAP) emission band and its LO-phonon replicas is kept at the original position. The intensity of yellow luminescence (YL) band is decreased, which means that the origin of YL band has no relation with VGa. The increased FWHM of GaN (0002) peak in proton-irradiated GaN indicates a degradation of crystal quality.
    • 基金项目: 高等学校博士学科点专项科研基金(批准号: 20111317120005)、河北省高等学校科学技术研究重点项目(批准号: ZD2010124)和国家自然科学基金(批准号: 61076004)资助的课题.
    • Funds: Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20111317120005), the Key Program for Science and Technology Research of Higher Education Institution of Hebei province, China (Grant No. ZD2010124), and the National Natural Science Foundation of China (Grant No. 61076004).
    [1]

    Kim Nam Hyeong 2009 Ph. D. Dissertation (Ohio: Ohio State University)

    [2]

    Kuriyama K, Ooi M, Onoue A, Kushida K, okada M, Xu Q 2006 Appl. Phys. Lett. 88 132109

    [3]

    Polyakov Y, Lee In-Hwan, Smirnov N B, Govorkov A V, Kozhukhova E A, Kolin N G, Korulin A V, Boiko V M, Pearton S J 2011 J. Appl. Phys. 109 123703

    [4]

    Zhang M L, Wang X L, Xiao H L, Wang C M, Ran J X, Tang J, Hu G X 2008 Chin. Phys. Lett. 25 1045

    [5]

    Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Hubei: Science and Technology Press) p33 (in Chinese) [王少阶, 陈志权, 王波, 吴亦初, 方鹏飞, 张永学 2008 应用正电子谱学(湖北: 湖北科学技术出版社)第33页]

    [6]

    Hautakangas S, Makkonen I, Ranki V, Puska M J, Saarinen K, Xu X, Look D C 2006 Phys. Rev. B 73 193301

    [7]

    Hautojarvi P 1995 Materials Science Forum 175-178 47

    [8]

    Oila J, Kivioja J, Ranki V, Saarinen K, Look D C, Molnar R J, Park S S, Lee S K, Han J Y 2003 Appl. Phys. Lett. 82 3433

    [9]

    Wang R X, Xu S J, Fung S, Beling C D, Wang K, Li S, Wei Z F, Zhou T J, Zhang J D, Huang Ying, Gong M 2005 Appl. Phys. Lett. 87 031906

    [10]

    Saarinen K, Laine T, Kuisma S, Nissilä J, Hautojärvi P, Dobrzynski L, Baranowski J M, Pakula K, Stepniewski R, Wojdak M, Wysmolek A, Suski T, Leszczynski M, Grzegory I, and Porowski S 1997 Phys. Rev. Lett. 79 3030

    [11]

    Armitage R, Hong William, Yang Qing, Feick H, Gebauer J, Weber E R, Hautakangas S, Saarinen K 2003 Appl. Phys. Lett. 82 3457

    [12]

    Ogino T, Aoki M 1980 Jpn. J. Appl. Phys. 19 2395

    [13]

    Lyons J L, Janotti A, Van de Walle C G 2010 Appl. Phys. Lett. 97 152108

    [14]

    Paskova T, Arnaudov B, Paskov P P, Goldys E M, Hautakangas S, Saarinen K, Södervall U, Monemar B 2005 J. Appl. Phys. 98 033508

  • [1]

    Kim Nam Hyeong 2009 Ph. D. Dissertation (Ohio: Ohio State University)

    [2]

    Kuriyama K, Ooi M, Onoue A, Kushida K, okada M, Xu Q 2006 Appl. Phys. Lett. 88 132109

    [3]

    Polyakov Y, Lee In-Hwan, Smirnov N B, Govorkov A V, Kozhukhova E A, Kolin N G, Korulin A V, Boiko V M, Pearton S J 2011 J. Appl. Phys. 109 123703

    [4]

    Zhang M L, Wang X L, Xiao H L, Wang C M, Ran J X, Tang J, Hu G X 2008 Chin. Phys. Lett. 25 1045

    [5]

    Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Hubei: Science and Technology Press) p33 (in Chinese) [王少阶, 陈志权, 王波, 吴亦初, 方鹏飞, 张永学 2008 应用正电子谱学(湖北: 湖北科学技术出版社)第33页]

    [6]

    Hautakangas S, Makkonen I, Ranki V, Puska M J, Saarinen K, Xu X, Look D C 2006 Phys. Rev. B 73 193301

    [7]

    Hautojarvi P 1995 Materials Science Forum 175-178 47

    [8]

    Oila J, Kivioja J, Ranki V, Saarinen K, Look D C, Molnar R J, Park S S, Lee S K, Han J Y 2003 Appl. Phys. Lett. 82 3433

    [9]

    Wang R X, Xu S J, Fung S, Beling C D, Wang K, Li S, Wei Z F, Zhou T J, Zhang J D, Huang Ying, Gong M 2005 Appl. Phys. Lett. 87 031906

    [10]

    Saarinen K, Laine T, Kuisma S, Nissilä J, Hautojärvi P, Dobrzynski L, Baranowski J M, Pakula K, Stepniewski R, Wojdak M, Wysmolek A, Suski T, Leszczynski M, Grzegory I, and Porowski S 1997 Phys. Rev. Lett. 79 3030

    [11]

    Armitage R, Hong William, Yang Qing, Feick H, Gebauer J, Weber E R, Hautakangas S, Saarinen K 2003 Appl. Phys. Lett. 82 3457

    [12]

    Ogino T, Aoki M 1980 Jpn. J. Appl. Phys. 19 2395

    [13]

    Lyons J L, Janotti A, Van de Walle C G 2010 Appl. Phys. Lett. 97 152108

    [14]

    Paskova T, Arnaudov B, Paskov P P, Goldys E M, Hautakangas S, Saarinen K, Södervall U, Monemar B 2005 J. Appl. Phys. 98 033508

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出版历程
  • 收稿日期:  2012-12-17
  • 修回日期:  2013-01-25
  • 刊出日期:  2013-06-05

GaN厚膜中的质子辐照诱生缺陷研究

  • 1. 河北工业大学信息工程学院, 天津 300401;
  • 2. 中国科学院半导体研究所半导体材料科学重点实验室, 北京 100083;
  • 3. 中国科学院高能物理研究所核分析技术重点实验室, 北京 100049
    基金项目: 高等学校博士学科点专项科研基金(批准号: 20111317120005)、河北省高等学校科学技术研究重点项目(批准号: ZD2010124)和国家自然科学基金(批准号: 61076004)资助的课题.

摘要: 本文采用正电子湮没谱研究质子辐照诱生缺陷, 实验发现: 能量为5 MeV的质子辐照在GaN厚膜中主要产生的是Ga单空位, 没有双空位或者空位团形成; 在10 K测试的低温光致发光谱中, 带边峰出现了"蓝移", 辐照后黄光带的发光强度减弱, 说明黄光带的起源与Ga空位(VGa)之间不存在必然的联系, 各激子发光峰位置没有改变, 仅强度随质子注量发生变化; 样品(0002)面双晶XRD扫描曲线的半峰宽在辐照后明显增大, 说明质子辐照对晶格的周期性产生了影响, 薄膜晶体质量下降.

English Abstract

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