搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

HW-MWECR-CVD法制备氢化微晶硅薄膜及其微结构研究

刘国汉 丁 毅 朱秀红 陈光华 贺德衍

引用本文:
Citation:

HW-MWECR-CVD法制备氢化微晶硅薄膜及其微结构研究

刘国汉, 丁 毅, 朱秀红, 陈光华, 贺德衍

Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD

Liu Guo-Han, Ding Yi, Zhu Xiu-Hong, Chen Guang-Hua, He De-Yan
PDF
导出引用
  • 用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明,当反应气体中SiH4浓度在3.6%—50%之间大范围变化时,μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明,在SiH4浓度较大时制备的薄膜,其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH4气体高度分解,等离子体高度电离.
    Hydrogenated microcrystalline silicon (μc-Si∶H) films with high crystalline volume fraction were deposited using a novel hot wire assisted microwave electron cyclotron resonance-chemical vapor deposition (HW-MWECR-CVD) system. The Raman scattering spectrum and X-ray diffraction measurements were carried out to characterize the microstructure of the films. It was shown that, in a wide range of silane dilution ratio, all the deposited films had high crystalline volume fractions. The transition phase from amorphous to microcrystalline silicon was more easily grown with higher silane dilution ratio, which was attributed to the higher ionization and decomposition of the source gases in HW-MWECR-CVD system than in other systems.
    • 基金项目: 国家重点基础研究发展计划(973)项目(批准号:G000028201)和甘肃省自然科学基金(批准号: 3ZS051-A25-052)资助的课题.
计量
  • 文章访问数:  8454
  • PDF下载量:  1251
  • 被引次数: 0
出版历程
  • 收稿日期:  2005-11-02
  • 修回日期:  2006-04-02
  • 刊出日期:  2006-11-20

/

返回文章
返回