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A new growth method of roughed p-GaN has been demonstrated in this paper. First, some crystal seeds of p-GaN are obtained by utilizing low-temperature growth. Then, a p-GaN high-temperature expitaxy layer is grown on it subsequently with a fast growth rate, which will enlarge the roughness degree. Compared with the luminous flux of the conventional light emitting diode with flat p-GaN, the luminous flux is improved by 45%. Meanwhile, it is found that the problems of large reverse current and high forward bias aroused by the low-temperature epitaxy are also solved.
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Keywords:
- surface roughness /
- GaN /
- p-GaN /
- LED
[1] Nishida T, Saito H, Kobayashi N, Naoki K 2001 Appl. Phys. Lett. 79 711
[2] Shakya J, Kim K H, Lin J Y, Jiang H X 2004 Appl. Phys. Lett. 85 142
[3] Chen Y X, Zheng W H, Chen W, Chen L H, Tan Y D, Shen G D 2010 Acta. Phys. Sin. 59 8083 (in Chinese) [陈依新、 郑婉华、 陈 微、 陈良惠、 汤益丹、 沈光地 2010 物理学报 59 8083]
[4] Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T 2001 Jpn. J. Appl. Phys. 40 L583
[5] Jiang Y, Luo Y, Wang L, Li H T, Xi G Y, Zhao W, Han Y J 2009 Acta. Phys. Sin. 58 3468 (in Chinese) [江 洋、 罗 毅、 汪 莱、 李洪涛、 席光义、 赵 维、 韩彦军 2009 物理学报 58 3468]
[6] Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P, Nakamura S 2004 Appl. Phys. Lett. 84 855
[7] Park E H, Ferguson I T, Jeon S K, Park J S, Yoo T K 2006 Appl. Phys. Lett. 89 251106
[8] Hao M, Egawa T, Ishikawa H 2006 Appl. Phys. Lett. 89 241907
[9] Pan S M, Tu R C, Fan Y M, Yeh R C 2003 IEEE Photon. Tech. Lett. 15 649
[10] Tsai C M, Sheu J K, Lai W C, Hsu Y P, Wang P T, Kuo C T, Kuo C W, Chang S J, Su Y K 2005 IEEE Trans. on Electron. Dev. 26 464
[11] Liu C H, Chuang R W, Chang S J, Su Y K, Wu L W, Lin C C 2004 Mater. Sci. Eng. B 112 10
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[1] Nishida T, Saito H, Kobayashi N, Naoki K 2001 Appl. Phys. Lett. 79 711
[2] Shakya J, Kim K H, Lin J Y, Jiang H X 2004 Appl. Phys. Lett. 85 142
[3] Chen Y X, Zheng W H, Chen W, Chen L H, Tan Y D, Shen G D 2010 Acta. Phys. Sin. 59 8083 (in Chinese) [陈依新、 郑婉华、 陈 微、 陈良惠、 汤益丹、 沈光地 2010 物理学报 59 8083]
[4] Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T 2001 Jpn. J. Appl. Phys. 40 L583
[5] Jiang Y, Luo Y, Wang L, Li H T, Xi G Y, Zhao W, Han Y J 2009 Acta. Phys. Sin. 58 3468 (in Chinese) [江 洋、 罗 毅、 汪 莱、 李洪涛、 席光义、 赵 维、 韩彦军 2009 物理学报 58 3468]
[6] Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P, Nakamura S 2004 Appl. Phys. Lett. 84 855
[7] Park E H, Ferguson I T, Jeon S K, Park J S, Yoo T K 2006 Appl. Phys. Lett. 89 251106
[8] Hao M, Egawa T, Ishikawa H 2006 Appl. Phys. Lett. 89 241907
[9] Pan S M, Tu R C, Fan Y M, Yeh R C 2003 IEEE Photon. Tech. Lett. 15 649
[10] Tsai C M, Sheu J K, Lai W C, Hsu Y P, Wang P T, Kuo C T, Kuo C W, Chang S J, Su Y K 2005 IEEE Trans. on Electron. Dev. 26 464
[11] Liu C H, Chuang R W, Chang S J, Su Y K, Wu L W, Lin C C 2004 Mater. Sci. Eng. B 112 10
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