搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

不同退火温度下氧化锌薄膜可见发光与n型导电研究

聂朦 赵艳 曾勇 蒋毅坚

引用本文:
Citation:

不同退火温度下氧化锌薄膜可见发光与n型导电研究

聂朦, 赵艳, 曾勇, 蒋毅坚

Investigation on visible emission and n-type conductivity of ZnO thin films annealed at different temperatures

Nie Meng, Zhao Yan, Zeng Yong, Jiang Yi-Jian
PDF
导出引用
  • 采用脉冲激光沉积法在蓝宝石衬底上制备出可见光发光良好的氧化锌薄膜, 在不同的温度下进行了后退火处理. 随着退火温度的升高, 薄膜的可见光发光发生了显著改变, 载流子浓度、迁移率、电阻率也呈现出一定的变化规律. 结合 X射线衍射、扫描电子显微镜、光致发光谱及霍尔测量, 探讨了本征氧化锌薄膜可见光发光的发射机理, 并分析了其 n型导电的原因.
    ZnO thin films with good visible emissions were deposited on Al2O3 substrates by pulsed laser deposition and subsequently annealed at different temperatures in oxygen ambient. The visible emission property of the films varied significantly with different annealing temperatures. The resistivity, carrier concentration and mobility of the films showed certain rules. From the results of X-ray diffraction, scanning electron microscope, photoluminescence and Hall measurements, the mechanism of visible emission and the reason of showing n-type conductivity in native ZnO thin films were analyzed in this paper.
    • 基金项目: 国家自然科学基金(批准号: 51005005)和北京市教委项目(批准号: KM201210005021)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51005005), and the Beijing Municipal Commission of Education, China (Grant No. KM201210005021).
    [1]

    Choi Y S, Kang J W, Hwang D K, Park S J 2010 IEEE T. Electron. 57 2641

    [2]

    Qin J M, Tian L F, Zhao D X, Jiang D Y, Cao J M, Ding M, Guo Z 2011 Acta Phys. Sin. 60 113 (in Chinese) [秦杰明, 田立飞, 赵东旭, 蒋大勇, 曹建明, 丁梦, 郭振 2011 物理学报 60 113]

    [3]

    Kashiwaba Y, Sugawara K, Haga K 2002 Thin Solid Films 411 8790

    [4]

    Ko H J, Chen Y F, Zhu Z 2000 Appl. Phys. Lett. 76 19051907

    [5]

    Natsume Y, Sakata H 2000 Thin Solid Films 372 3036

    [6]

    Tsoutsouva M G, Panagopoulos C N, Papadimitriou D, Fasaki I, Kompitsas M 2011 Mater. Sci. Eng. B-Adv. Funct. Solid-state Mater. 176 480483

    [7]

    Bentes L, Ayouchi R, Santos C, Schwarz R, Sanguino P, Conde O, Peres M, Monteiro T, Teodoro O 2007 Superlattice. Microst. 42 152157

    [8]

    Ttipathi S, Choudhary R J, Tripathi A, Baranwal V, Pandey A C, Gerlach J W, Dar C, Kanjilal D 2008 Nucl. Instrum. Meth. B 266 15331536

    [9]

    McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 0711017

    [10]

    Kuo F L, Lin M T, Mensah B A, Scharf T W, Shepherd N D 2010 Phys. Status Solidi A-Appl. Mater. Sci. 207 24872491

    [11]

    Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 0535165

    [12]

    Sardari S E, Iliadis A A, Stamataki M, Tsamakis D, Konofaos N 2010 Solid-state Electron. 54 11501154

    [13]

    Look D C, Farlow G C, Reunchan P, Limpijumnong S, Zhang S B, Nordlund K 2005 Phys. Rev. Lett. 95 22550222

    [14]

    Zhu B L, Zhao X Z, Su F H, Li G H, Wu X G, Wu J, Wu R 2010 Vacuum 84 12801286

    [15]

    Fernandez-Hevia D, de Frutos J, Caballero A C, Fernandez J F 2003 Appl. Phys. Lett. 83 26922694

    [16]

    Ye J D, Gu S L, Qin F, Zhu S M, Liu S M, Zhou X, Liu W, Hu L Q, Zhang R, Shi Y, Zheng Y D 2005 Appl. Phys. A: Mater. Sci. Process. 81 759762

    [17]

    Liu J, Zhao Y, Jiang Y J, Liu Y L 2010 Chin. Phys. B 19 0878018

    [18]

    Wang J, Du G T, Zhang Y T, Zhao B J, Yang X T, Liu D L 2004 J. Cryst. Growth 263 269272

    [19]

    Heo Y W, Norton D P, Pearton S J 2005 J. Appl. Phys. 98 0735027

    [20]

    Clatot J, Campet G, Zeinert A, Labrugere C, Rougier A 2011 Appl. Surf. Sci. 257 51815184

    [21]

    Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phy. D-Appl. Phys. 45 19510419

    [22]

    Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 12650112

    [23]

    Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 16520216

    [24]

    Janotti A, Van de Walle C G 2005 Appl. Phys. Lett. 87 12210212

  • [1]

    Choi Y S, Kang J W, Hwang D K, Park S J 2010 IEEE T. Electron. 57 2641

    [2]

    Qin J M, Tian L F, Zhao D X, Jiang D Y, Cao J M, Ding M, Guo Z 2011 Acta Phys. Sin. 60 113 (in Chinese) [秦杰明, 田立飞, 赵东旭, 蒋大勇, 曹建明, 丁梦, 郭振 2011 物理学报 60 113]

    [3]

    Kashiwaba Y, Sugawara K, Haga K 2002 Thin Solid Films 411 8790

    [4]

    Ko H J, Chen Y F, Zhu Z 2000 Appl. Phys. Lett. 76 19051907

    [5]

    Natsume Y, Sakata H 2000 Thin Solid Films 372 3036

    [6]

    Tsoutsouva M G, Panagopoulos C N, Papadimitriou D, Fasaki I, Kompitsas M 2011 Mater. Sci. Eng. B-Adv. Funct. Solid-state Mater. 176 480483

    [7]

    Bentes L, Ayouchi R, Santos C, Schwarz R, Sanguino P, Conde O, Peres M, Monteiro T, Teodoro O 2007 Superlattice. Microst. 42 152157

    [8]

    Ttipathi S, Choudhary R J, Tripathi A, Baranwal V, Pandey A C, Gerlach J W, Dar C, Kanjilal D 2008 Nucl. Instrum. Meth. B 266 15331536

    [9]

    McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 0711017

    [10]

    Kuo F L, Lin M T, Mensah B A, Scharf T W, Shepherd N D 2010 Phys. Status Solidi A-Appl. Mater. Sci. 207 24872491

    [11]

    Zubiaga A, Garcia J A, Plazaola F, Tuomisto F, Saarinen K, Zuniga Perez J, Munoz-Sanjose V 2006 J. Appl. Phys. 99 0535165

    [12]

    Sardari S E, Iliadis A A, Stamataki M, Tsamakis D, Konofaos N 2010 Solid-state Electron. 54 11501154

    [13]

    Look D C, Farlow G C, Reunchan P, Limpijumnong S, Zhang S B, Nordlund K 2005 Phys. Rev. Lett. 95 22550222

    [14]

    Zhu B L, Zhao X Z, Su F H, Li G H, Wu X G, Wu J, Wu R 2010 Vacuum 84 12801286

    [15]

    Fernandez-Hevia D, de Frutos J, Caballero A C, Fernandez J F 2003 Appl. Phys. Lett. 83 26922694

    [16]

    Ye J D, Gu S L, Qin F, Zhu S M, Liu S M, Zhou X, Liu W, Hu L Q, Zhang R, Shi Y, Zheng Y D 2005 Appl. Phys. A: Mater. Sci. Process. 81 759762

    [17]

    Liu J, Zhao Y, Jiang Y J, Liu Y L 2010 Chin. Phys. B 19 0878018

    [18]

    Wang J, Du G T, Zhang Y T, Zhao B J, Yang X T, Liu D L 2004 J. Cryst. Growth 263 269272

    [19]

    Heo Y W, Norton D P, Pearton S J 2005 J. Appl. Phys. 98 0735027

    [20]

    Clatot J, Campet G, Zeinert A, Labrugere C, Rougier A 2011 Appl. Surf. Sci. 257 51815184

    [21]

    Can M M, Shah S I, Doty M F, Haughn C R, Firat T 2012 J. Phy. D-Appl. Phys. 45 19510419

    [22]

    Janotti A, Van de Walle C G 2009 Rep. Prog. Phys. 72 12650112

    [23]

    Janotti A, Van de Walle C G 2007 Phys. Rev. B 76 16520216

    [24]

    Janotti A, Van de Walle C G 2005 Appl. Phys. Lett. 87 12210212

  • [1] 张科, 胡子阳, 黄利克, 徐洁, 张京, 诸跃进. 氧化锌掺铝绒面薄膜在有机光伏电池中的应用. 物理学报, 2015, 64(17): 178801. doi: 10.7498/aps.64.178801
    [2] 陈丹丹, 徐飞, 曹汝楠, 蒋最敏, 马忠权, 杨洁, 杜汇伟, 洪峰. 铒铥共掺氧化锌薄膜近红外宽带发射及变温行为的研究. 物理学报, 2015, 64(4): 047104. doi: 10.7498/aps.64.047104
    [3] 王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖. 高绒度掺硼氧化锌透明导电薄膜用作非晶硅太阳电池前电极的研究. 物理学报, 2014, 63(2): 028801. doi: 10.7498/aps.63.028801
    [4] 高松, 赵谡玲, 徐征, 杨一帆, 刘志民, 谢小漪. 氧化锌纳米颗粒薄膜的近紫外电致发光特性研究. 物理学报, 2014, 63(15): 157702. doi: 10.7498/aps.63.157702
    [5] 赵兴涛, 郑义, 韩颖, 周桂耀, 侯峙云, 沈建平, 王春, 侯蓝田. 光子晶体光纤包层可见光及红外宽带色散波产生. 物理学报, 2013, 62(6): 064215. doi: 10.7498/aps.62.064215
    [6] 杨兆锐, 张小安, 徐秋梅, 杨治虎. 高电荷态Krq+与Al表面碰撞发射可见光的研究. 物理学报, 2013, 62(4): 043401. doi: 10.7498/aps.62.043401
    [7] 王雅丽, 史祎诗, 李拓, 高乾坤, 肖俊, 张三国. 可见光域叠层成像中照明光束的关键参量研究. 物理学报, 2013, 62(6): 064206. doi: 10.7498/aps.62.064206
    [8] 沈庆鹤, 高志伟, 丁怀义, 张光辉, 潘楠, 王晓平. Ga掺杂对ZnO纳米结构可见光发射的抑制效应. 物理学报, 2012, 61(16): 167105. doi: 10.7498/aps.61.167105
    [9] 苑金辉, 侯蓝田, 周桂耀, 魏东宾, 王海云, 董世蕊, 王清月, 刘博文, 胡明列. 传输可见光的空芯光子带隙光纤的研究. 物理学报, 2008, 57(7): 4230-4237. doi: 10.7498/aps.57.4230
    [10] 麻健勇, 刘世杰, 魏朝阳, 晋云霞, 赵元安, 邵建达, 范正修. 可见光波段双层浮雕型导模共振滤波器设计与分析. 物理学报, 2008, 57(7): 4195-4201. doi: 10.7498/aps.57.4195
    [11] 孙贤明, 韩一平. 冰水混合云对可见光的吸收和散射特性. 物理学报, 2006, 55(2): 682-687. doi: 10.7498/aps.55.682
    [12] 臧竞存, 田战魁, 刘燕行, 迟 静, 邹玉林, 魏建忠, 叶建萍. 溶胶-凝胶法制备ZnO薄膜的成核-生长和失稳分解研究. 物理学报, 2006, 55(3): 1358-1362. doi: 10.7498/aps.55.1358
    [13] 袁宁一, 李金华, 范利宁, 王秀琴, 谢建生. 离子束增强沉积制备p型氧化锌薄膜及其机理研究. 物理学报, 2006, 55(7): 3581-3584. doi: 10.7498/aps.55.3581
    [14] 王洪波, 张景文, 杨晓东, 刘振玲, 徐庆安, 侯 洵. 氧化锌导电类型转化的热力学分析. 物理学报, 2005, 54(6): 2893-2898. doi: 10.7498/aps.54.2893
    [15] 辛显双, 周百斌, 吕树臣, 苏文辉. 掺铕纳米氧化锌的制备及其发光性质. 物理学报, 2005, 54(4): 1859-1862. doi: 10.7498/aps.54.1859
    [16] 顾培夫, 黄弼勤, 郑臻荣. 用于可见光区的薄膜光子晶体全角度反射器. 物理学报, 2005, 54(8): 3707-3710. doi: 10.7498/aps.54.3707
    [17] 徐文兰, 张栓勤, 徐 怡. 可见光隐身涂料设计. 物理学报, 2004, 53(9): 3215-3219. doi: 10.7498/aps.53.3215
    [18] 朋兴平, 兰 伟, 谭永胜, 佟立国, 王印月. Cu掺杂氧化锌薄膜的发光特性研究. 物理学报, 2004, 53(8): 2705-2709. doi: 10.7498/aps.53.2705
    [19] 禹宣伊, 丁欣, 李卓, 许京军, 张光寅. 可见光红外图像转换薄膜的研究. 物理学报, 2002, 51(6): 1307-1311. doi: 10.7498/aps.51.1307
    [20] 朱美芳, 陈国, 许怀哲, 韩一琴, 谢侃, 刘振祥, 唐勇, 陈培毅. 镶嵌在氧化硅薄膜中纳米晶硅的可见光荧光谱与发光机制的研究. 物理学报, 1997, 46(8): 1645-1651. doi: 10.7498/aps.46.1645
计量
  • 文章访问数:  4727
  • PDF下载量:  430
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-02-25
  • 修回日期:  2013-05-09
  • 刊出日期:  2013-09-05

/

返回文章
返回