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Ga1-xInxNyAs1-y/GaAs量子阱中电子-LO声子的散射率

陈茜 王海龙 汪辉 龚谦 宋志棠

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Ga1-xInxNyAs1-y/GaAs量子阱中电子-LO声子的散射率

陈茜, 王海龙, 汪辉, 龚谦, 宋志棠

Electron-LO phonon scattering in Ga1-xInxNyAs1-y/GaAs quantum well

Chen Qian, Wang Hai-Long, Wang Hui, Gong Qian, Song Zhi-Tang
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  • 在有效质量近似下利用打靶法求出Ga1-xInxNyAs1-y/GaAs量子阱中的本征能级En, 并通过费米黄金规则计算电子-LO声子由第一激发态到基态的散射率和平均散射率随温度、阱宽以及氮(N)和铟(In)组分变化的规律. 计算结果表明: 在In 组分恒定的情况下, 随着N组分的增加, 散射率和平均散射率增加; 在N组分恒定的情况下, 随着In组分的增加, 散射率和平均散射率减小; 随着温度的增加, 在温度较低时散射率和平均散射率随温度的增加变化不大, 在温度较高时随温度的增加而增加; 随着阱宽的增加, 散射率和平均散射率都是先增加到一个最大值, 然后再减小, 最大值出现在阱宽200 Å附近. 计算结果对Ga1-xInxNyAs1-y/GaAs量子阱在光电子器件应用方面有一定的指导意义.
    Within the framework of effective mass approximation, the values of energy eigenvalue En in Ga1-xInxNyAs1-y/GaAs quantum well are theoretically calculated using shooting method. In addition, we calculate the electron-LO phonon scattering and mean scattering rate at different temperatures, well width, N concentrations and In concentrations for an electron initially in the second subband and finally in the ground state using Fermi’s golden rule. It is shown that the electron-LO phonon scattering and mean scattering rate increase with the increase of N concentration under the In concentration constant. The electron-LO phonon scattering and mean scattering rate decrease with the increase of In concentration under the In concentration constant. The electron-LO phonon scattering increases monotonically with the increase of temperature. When the temperature is relatively low, the variation of mean scattering rate is not obvious with the increase of temperature When the temperature is relatively high, mean scattering rate increases with the increase of temperature. The scattering and mean scattering rate increase up to their maxima and then begin to decrease as the well width increases. The maximum value is reached when the well width is about 200 Å. Our calculated results are meaningful and can be used for designing the optoelectronic devices based on Ga1-xInxNyAs1-y/GaAs quantum well.
    • 基金项目: 国家自然科学基金(批准号: 60976015, 61176065)、山东省自然科学基金 (批准号: ZR2010FM023)和信息功能材料国家重点实验开放基金资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976015, 61176065), the Natural Science Foundation of Shandong (Grant No. ZR2010FM023), and the Open Project of State Key Laboratory of Functional Materials for Informatics, China.
    [1]

    Lin G J, Lai H K, Li C, Chen S Y, Yu J Z 2008 Chin. Phys. B 17 3479

    [2]

    Wu Y F, Liang X X, Baja K K 2005 Chin. Phys. B 14 2314

    [3]

    Zheng Y J, Ji Z W, Xu X G 2011 Acta Phys. Sin. 60 047805 (in Chinese) [郑雨军, 冀子武, 徐现刚 2011 物理学报 60 047805]

    [4]

    Wang H L, Jiang L M, Gong Q, Feng S L 2010 Physica B 405 3818

    [5]

    Kondow M, UomiK, Niwa A, Watahiki S, Yazawa Y 1996 Jpn. J. Appl. Phys. 35 1273

    [6]

    Spuhler G J, Krainer L, Liverini V, Grange R, Haiml M, Pawlik S, Schmidt B, Schön S, Keller U 2005 Phot. Technol. Lett. 17 1319

    [7]

    Rutz A, Liverini V, Maas D J H C, Rudin B, Bellancourt A R, Schön S, Keller U 2006 Elec. Lett. 42 926

    [8]

    Zhan L, Chan K S, Pun E Y B, Ho H P 2003 Opt. Commun. 228 167

    [9]

    Kondow M, Nakatsuka S, Kitatani T, Yazawa Y, Okai M 1996 Jpn. J. Appl. Phys. 35 5711

    [10]

    Kondow M, Kitatani T 2002 Semicod. Sci. Technol. 17 746

    [11]

    Zhang S Y, Niu Z C, Ni H Q, Wu D H, He Z H, Sun Z, Han Q, Wu R H 2005 Appl. Phys. Lett. 87 161911

    [12]

    Niu Z C, Zhang S Y, Ni H Q, Han Q, Yang X H, Wu D H, Zhao H, Peng H L, Xu Y Q, Du Y, Li S Y, He Z H, Ren Z W, Zhou Z Q, Xiong Y H, Wang H L, Wu R H 2005 Appl. Phys. Lett. 87 231121

    [13]

    Niu Z C, Ni H Q, Xu X H, Zhang W, Xu Y Q, Wu R H 2003 Phys. Rev. B 68 235326

    [14]

    Sawaki N 1986 J. Phys. C: Solid State Phys. 19 4965

    [15]

    Weber G, Paula A M D, Ryan J F 1991 Semicod. Sci. Technol. 6 397

    [16]

    Xie W F, Zhu W 2012 Commun. Theor. Phys. 38 375

    [17]

    Yang F J, Ban S L 2012 Acta Phys. Sin. 61 087201 (in Chinese) [杨福军, 班士良 2012 物理学报 61 087201]

    [18]

    Xia Z L, Fang Z X, Shao J D 2006 Acta Phys. Sin. 55 3007 (in Chinese) [夏志林, 范正修, 邵建达 2006 物理学报 55 3007]

    [19]

    Murdin B N, Hollingworth A R, Kamal-Saadi M, Kotitschke R T 1999 Phys. Rev. B 59 R7817

    [20]

    Wetzel C, Walukiewicz W, Ager Ⅲ J W 1997 Proc. Mat. Res. Soc. Symp. 449 567

    [21]

    Zheng Y S, Lu T Q 1997 Semicond. Sci. Technol. 12 296

    [22]

    Blom P W M, Haverkort J E M, Hail P J, Wolter J H 1993 Appl. Phys. Lett. 62 1490

    [23]

    Rudin S 1990 Phys. Rev. B 41 7713

    [24]

    Potter R J, Balkan N 2004 J. Phys.: Condens. Matter 16 S3387

  • [1]

    Lin G J, Lai H K, Li C, Chen S Y, Yu J Z 2008 Chin. Phys. B 17 3479

    [2]

    Wu Y F, Liang X X, Baja K K 2005 Chin. Phys. B 14 2314

    [3]

    Zheng Y J, Ji Z W, Xu X G 2011 Acta Phys. Sin. 60 047805 (in Chinese) [郑雨军, 冀子武, 徐现刚 2011 物理学报 60 047805]

    [4]

    Wang H L, Jiang L M, Gong Q, Feng S L 2010 Physica B 405 3818

    [5]

    Kondow M, UomiK, Niwa A, Watahiki S, Yazawa Y 1996 Jpn. J. Appl. Phys. 35 1273

    [6]

    Spuhler G J, Krainer L, Liverini V, Grange R, Haiml M, Pawlik S, Schmidt B, Schön S, Keller U 2005 Phot. Technol. Lett. 17 1319

    [7]

    Rutz A, Liverini V, Maas D J H C, Rudin B, Bellancourt A R, Schön S, Keller U 2006 Elec. Lett. 42 926

    [8]

    Zhan L, Chan K S, Pun E Y B, Ho H P 2003 Opt. Commun. 228 167

    [9]

    Kondow M, Nakatsuka S, Kitatani T, Yazawa Y, Okai M 1996 Jpn. J. Appl. Phys. 35 5711

    [10]

    Kondow M, Kitatani T 2002 Semicod. Sci. Technol. 17 746

    [11]

    Zhang S Y, Niu Z C, Ni H Q, Wu D H, He Z H, Sun Z, Han Q, Wu R H 2005 Appl. Phys. Lett. 87 161911

    [12]

    Niu Z C, Zhang S Y, Ni H Q, Han Q, Yang X H, Wu D H, Zhao H, Peng H L, Xu Y Q, Du Y, Li S Y, He Z H, Ren Z W, Zhou Z Q, Xiong Y H, Wang H L, Wu R H 2005 Appl. Phys. Lett. 87 231121

    [13]

    Niu Z C, Ni H Q, Xu X H, Zhang W, Xu Y Q, Wu R H 2003 Phys. Rev. B 68 235326

    [14]

    Sawaki N 1986 J. Phys. C: Solid State Phys. 19 4965

    [15]

    Weber G, Paula A M D, Ryan J F 1991 Semicod. Sci. Technol. 6 397

    [16]

    Xie W F, Zhu W 2012 Commun. Theor. Phys. 38 375

    [17]

    Yang F J, Ban S L 2012 Acta Phys. Sin. 61 087201 (in Chinese) [杨福军, 班士良 2012 物理学报 61 087201]

    [18]

    Xia Z L, Fang Z X, Shao J D 2006 Acta Phys. Sin. 55 3007 (in Chinese) [夏志林, 范正修, 邵建达 2006 物理学报 55 3007]

    [19]

    Murdin B N, Hollingworth A R, Kamal-Saadi M, Kotitschke R T 1999 Phys. Rev. B 59 R7817

    [20]

    Wetzel C, Walukiewicz W, Ager Ⅲ J W 1997 Proc. Mat. Res. Soc. Symp. 449 567

    [21]

    Zheng Y S, Lu T Q 1997 Semicond. Sci. Technol. 12 296

    [22]

    Blom P W M, Haverkort J E M, Hail P J, Wolter J H 1993 Appl. Phys. Lett. 62 1490

    [23]

    Rudin S 1990 Phys. Rev. B 41 7713

    [24]

    Potter R J, Balkan N 2004 J. Phys.: Condens. Matter 16 S3387

计量
  • 文章访问数:  2976
  • PDF下载量:  324
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-08-09
  • 修回日期:  2013-08-19
  • 刊出日期:  2013-11-05

Ga1-xInxNyAs1-y/GaAs量子阱中电子-LO声子的散射率

  • 1. 山东省激光偏光与信息技术重点实验室, 曲阜师范大学物理系, 曲阜 273165;
  • 2. 中国科学院上海高等研究院, 上海 201203;
  • 3. 中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海 200050
    基金项目: 国家自然科学基金(批准号: 60976015, 61176065)、山东省自然科学基金 (批准号: ZR2010FM023)和信息功能材料国家重点实验开放基金资助的课题.

摘要: 在有效质量近似下利用打靶法求出Ga1-xInxNyAs1-y/GaAs量子阱中的本征能级En, 并通过费米黄金规则计算电子-LO声子由第一激发态到基态的散射率和平均散射率随温度、阱宽以及氮(N)和铟(In)组分变化的规律. 计算结果表明: 在In 组分恒定的情况下, 随着N组分的增加, 散射率和平均散射率增加; 在N组分恒定的情况下, 随着In组分的增加, 散射率和平均散射率减小; 随着温度的增加, 在温度较低时散射率和平均散射率随温度的增加变化不大, 在温度较高时随温度的增加而增加; 随着阱宽的增加, 散射率和平均散射率都是先增加到一个最大值, 然后再减小, 最大值出现在阱宽200 Å附近. 计算结果对Ga1-xInxNyAs1-y/GaAs量子阱在光电子器件应用方面有一定的指导意义.

English Abstract

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