NPB阳极缓冲层对反型结构聚合物太阳能电池性能的影响

龚伟; 徐征; 赵谡玲; 刘晓东; 杨倩倩; 樊星

doi:10.7498/aps.63.078801

摘要

制备了给体材料为poly（3-hexylthiophene）（P3HT），受体材料为[6，6]-phenyl-C60-butyric acid methyl ester（PCBM），器件结构为ITO/ZnO/P3HT：PCBM/NPB（0，1，5，10，25 nm）/Ag的反型体异质结聚合物太阳能电池. 不同厚度的N，N’-diphenyl-N，N’-bis（1-naphthyl）-1，1’-biphenyl-4，4’-diamine（NPB）阳极缓冲层被用来改善器件性能，研究了NPB阳极缓冲层对器件特性的影响. 研究发现，1 nm厚的NPB改善了器件的载流子收集效率，增加了器件的短路电流与开路电压. 当NPB缓冲层的厚度达到25 nm时，过厚的NPB导致串联电阻增加，使得器件特性大幅下降. 通过电容-电压测试，进一步研究了不同厚度NPB对器件载流子注入与收集的影响，1 nm厚的NPB修饰并没有改善器件的载流子注入但是增加了器件对光生载流子的收集效率，过厚的NPB使得自由载流子的复合占据主导. 适合厚度的NPB可以作为一种阳极缓冲层材料应用于聚合物太阳能电池提高器件特性.

关键词:

Abstract

Inverted configuration bulk heterojunction polymer solar cells based on ITO/ZnO/P3HT:PCBM/NPB/Ag were fabricated, with the donor material being poly(3-hexylthiophene)(P3HT), and the acceptor material being [6, 6]-phenyl-C60-butyric acid methyl ester(PCBM). N, N’-diphenyl-N, N’-bis(1-naphthyl)-1, 1’-biphenyl-4, 4’-diamine(NPB) thin anode buffer layers with different thicknesses, which were used to improve the performances of the devices; and the effects of NPB anode buffer were investigated. The insertion of 1 nm thick NPB improves charge collection of the device, both of the short circuit current and open circuit voltage are enhanced. When the thickness of NPB reaches 25 nm, the series resistances are significantly increased, leading to reduced device performances. Effects of different thicknesses of NPB on charge injection and collection are investigated by capacitance-voltage measurements. NPB with 1 nm thickness improves charge collection of the device but without improving charge injection, and the charge recombination mechanism is dominant if the NPB layer is too thick. NPB thin layer with appropriate thickness could be used to enhance the performances of bulk heterojunction polymer solar cells.

Keywords:

作者及机构信息

1.
北京交通大学发光与光信息技术教育部重点实验室, 北京交通大学光电子技术研究所, 北京 100044

基金项目: 国家重点基础研究发展计划（973计划）项目（批准号：2010CB327704）、教育部博士点基金（批准号：20130009130001）、国家自然科学基金（批准号：51272022）、教育部博士点基金（批准号：20120009130005）、教育部新世纪优秀人才支持计划（批准号：NCET-10-0220）和中央高校基本科研业务费专项资金（批准号：2012JBZ001）资助的课题.

Authors and contacts

1.
Key Laboratory of Luminescence and Optical Information of Ministry of Education, Beijing Jiaotong University, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China

Funds: Project supported by the National Grand Fundamental Research 973 Program of China (Grant No. 2010CB327704), the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130009130001), the National Natural Science Foundation of China(Grant No. 51272022), the Research Fund for the Doctoral Program of Higher Education(Grant No. 20120009130005), the New Century Excellent Talents in University(Grant No. NCET-10-0220), and the Fundamental Research Funds for the Central Universities(Grant No. 2012JBZ001).

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施引文献

[1]	Jonsson S K M, Carlegrim E, Zhang F, Salaneck W R, Fahlman M 2005 Jpn. J. Appl. Phys. 44 3695
[2]	Yook K S, Lee J Y 2010 J. Ind. Eng. Chem. 16 230
[3]	Liu X D, Leeb J Y, Guob L J 2013 Org. Electron. 14 469
[4]	Zhao D W, Tan S T, Ke L, Liu P, Kyaw AKK, Sun X W, Lo G Q, Kwong D L 2010 Sol. Energ. Mater. Sol. C 94 985
[5]	Pan H B, Zuo L J, Fu W F, Fan C C, Andreasen B, Jiang X Q, Norrman K, Krebs F C, Chen H Z 2013 Org. Electron. 14 797
[6]	Shrotriya V, Li G, Yao Y, Chu C-W, Yang Y 2006 Appl. Phys. Lett. 88 073508
[7]	Liu X D, Xu Z, Zhang F J, Zhao S L, Zhang T H, Gong W, Song J L, Kong C, Yan G, Xu X R 2010 Chin. Phys. B 19 118601
[8]	Liu X D, Xu Z, Zhang F J, Zhao S L, Zhang T H, Gong W, Yan G, Kong C, Wang Y S, Xu X R 2011 Chin. Phys. B 20 068801
[9]	Cai W Z, Gong X, Cao Y 2010 Sol. Energ. Mater. Sol. C 94 114
[10]	Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[11]	Zhang F J, Zhao D W, Zhuo Z L, Wang H, Xu Z, Wang Y S 2010 Sol. Energ. Mater. Sol. C 94 2416
[12]	Li Z F, Wu Z X, Jiao B, Liu P, Wang D D, Hou X 2012 Chem. Phys. Lett. 527 36
[13]	Xie G H, Xue Q, Chen P, Tao C, Zhao C M, Lu J H, Gong Z X, Zhang T Y, Huang R, Du H 2010 Org. Electron. 11 407
[14]	Halls M D, Tripp C P, Schlegel H B 2001 Phys. Chem. Chem. Phys. 3 2131
[15]	Wang J C, Ren X C, Shi S Q, Leung C W, Chan P K L 2011 Org. Electron. 12 880
[16]	Zhao C, Qiao X F, Chen B B, Hu B 2013 Org. Electron. 14 2192
[17]	Chen B B, Qiao X F, Liu C M, Zhao C, Chen H C, Wei K H, Hu B 2013 Appl. Phys. Lett. 102 193302
[18]	Shrotriya V, Yang Y 2005 J. Appl. Phys. 97 054504
[19]	Tsang S W, So S K, Xu J B 2006 J. Appl. Phys. 99 013706
[20]	Garcia-Belmonte G, Munar A, Barea E M, Bisquert J, Ugarte I, Pacios R 2008 Org. Electron. 9 847
[21]	He C, Zhong C M, Wu H B, Yang R Q, Yang W, Huang F, Bazan G C, Cao Y 2010 J. Mater. Chem. 20 2617
[22]	He Z C, Zhong C M, Huang X, Wong W Y, Wu H B, Chen L W, Su S J, Cao Y 2011 Adv. Mater. 23 4636
[23]	Fabregat-Santiago F, Garcia-Belmonte G, Mora-Seró I, Bisquert, J 2011 Phys. Chem. Chem. Phys. 13 9083
[24]	Wang M D, Zheng S Z, Wan X, Su Y R, Ke N, Zhao N, Wong K Y, Xu J B 2013 Sol. Energ. Mater. Sol. C 108 17
[25]	Mihailetchi V D, Wildeman J, Blom P W M 2005 Phys. Rev. Lett. 94 126602
[26]	Shuttle C G, Hamilton R, O’Regan B C, Nelson J, Durrant J R 2010 Proc. Natl. Acad. Sci. 107 16448

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