钙钛矿太阳电池中的缓冲层研究进展

陈永亮; 唐亚文; 陈沛润; 张力; 刘琪; 赵颖; 黄茜; 张晓丹

doi:10.7498/aps.69.20200543

摘要

基于钙钛矿材料优异的光电特性, 钙钛矿太阳电池的转换效率迅速提高. 但制约钙钛矿太阳电池性能的因素依然存在, 例如: 界面问题、稳定性问题等. 通过在载流子传输层/电极及载流子传输层/光吸收层之间引入能带结构合适的缓冲层, 可有效改善界面间的能带失配、载流子复合及化学反应等问题, 进而提高钙钛矿电池中的电荷分离及收集效率, 实现界面及稳定性问题的有效改善. 本文总结了当前钙钛矿太阳电池中引入的缓冲层材料,全面分析了不同缓冲层材料钝化空穴传输层/阳极、电子传输层/阴极、空穴传输层/吸收层及电子传输层/吸收层间界面的机理, 对比了不同缓冲层材料对电池性能的影响, 总结了缓冲层材料在钙钛矿电池中的作用, 最后指出了钙钛矿电池中各界面缓冲层材料的研究趋势及发展方向.

关键词:

Abstract

Based on the excellent optoelectronic properties of organic-inorganic hybrids perovskite materials, the power conversion efficiency of perovskite solar cells (PSCs) is rapidly increasing. However, factors that restrict the performance of PSCs still exist, such as interface and stability problems. Problems, such as band mismatching, carrier recombination and chemical reaction between interfaces, could be alleviated by introducing a buffer layer (BL) with a proper band structure between different layers. Moreover, stability as well as charge separation and collection could also be efficiently improved in PSCs. In this paper, an overview of the most contemporary strategies of BLs was provided. The passivation mechanism of BLs at different interfaces are highlighted and discussed in detail. Furthermore, the performances of recently developed BLs in PSCs are compared. Finally, we elaborate on the remaining challenges and future directions for the development of BLs to achieve high-efficiency and high-stability PSCs.

Keywords:

作者及机构信息

1.
南开大学光电子薄膜器件与技术研究所, 天津　300071

2.
天津市光电子薄膜器件与技术重点实验室, 天津　300071

3.
安徽工程大学, 芜湖　241000

通信作者: 黄茜, carolinehq@nankai.edu.cn

基金项目: 省部级-天津市自然科学基金(15JCYBJC21200)

Authors and contacts

1.
Institute of Photo-Electronics Thin Film Devices and Technique, Nankai University, Tianjin 300071, China

2.
Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Tianjin 300071, China

3.
Anhui Polytechnic University, Wuhu 241000, China

Corresponding author: Huang Qian, carolinehq@nankai.edu.cn

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 钙钛矿太阳电池的结构图和能级图　(a) 结构图; (b) 能级图

Fig. 1. Structure and energy band diagram of perovskite solar cell: (a) Structure; (b) Energy band diagram.

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图 2 空穴传输层与阳极之间的缓冲层能级图

Fig. 2. Energy level diagram of the buffer layer between the hole transport layer and the anode.

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图 3 有无浓度25 mg·ml^–1NiO缓冲层的50个单独钙钛矿太阳电池的效率分布图^[14]

Fig. 3. PCE distribution of 50 individual PSCs with and without 25 mg·ml^–1 NiO buffer layer^[14].

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图 4 电子传输层与阴极之间的缓冲层能级图

Fig. 4. Energy level diagram of the buffer layer between the electron transport layer and the cathode.

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图 5 不同TPBi缓冲层厚度钙钛矿太阳电池I-V图及不同结构电池的EQE图^[26]　(a) I-V图; (b) EQE曲线

Fig. 5. I-V diagram of perovskite solar cell with different TPBi buffer layer thickness and different structure cell EQE diagram^[26]: (a) I-V diagram; (b) EQE diagram.

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图 6 Perovskite/PCBM和Perovskite/PCBM/Zr(Ac)₄薄膜的AFM图及其表面I、N、Pb元素含量的XPS图谱；有无Zr(Ac)₄缓冲层钙钛矿太阳电池的最优电池J-V图^[30]　(a) Perovskite/PCBM; (b) Perovskite/PCBM/Zr(Ac)₄; (c) XPS图谱; (d) J-V图

Fig. 6. AFM diagram of Perovskite/PCBM and Perovskite/PCBM/Zr(Ac)₄ films and XPS spectra showing the different amount of I, N and Pb elements on the films surface; the J-V characteristics of the optimized device perovskite solar cell with and without Zr(Ac)₄ buffer layer^[30]: (a) Perovskite/PCBM; (b) Perovskite/PCBM/Zr(Ac)₄; (c) XPS spectra; (d) J-V diagram.

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图 7 ITO/SnO₂/perovskite与ITO/PEI/SnO₂/perovskite的AFM图、PL图及有无PEI缓冲层最优电池的入射光子-电流转换效率图(IPCE)^[20]　(a) ITO/SnO₂/perovskite; (b) ITO/PEI/SnO₂/perovskite; (c) PL图; (d) IPCE图

Fig. 7. The AFM images and the steady state PL spectra of ITO/PEI/SnO₂/perovskite and ITO/SnO₂/perovskite, and the IPCE spectra of the champion devices with and without PEI buffer layer^[20]: (a) ITO/SnO₂/perovskite; (b) ITO/PEI/SnO₂/perovskite; (c) PL spectra; (d) IPCE spectra.

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图 8 空穴传输层与吸收层之间的缓冲层能级图

Fig. 8. Energy level diagram of the buffer layer between the hole transport layer and the absorption layer.

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图 9 优化的GO作缓冲层的钙钛矿太阳电池J-V及重要参数图^[33]

Fig. 9. The J-V characteristics of the optimized device and important parameter table of perovskite solar cell with GO buffer layer^[33].

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图 10 1: Glass/Perovskite; 2: Glass/CuPc/Perovskite; 3: Glass/CuPc/Al₂O₃/Perovskite; 4: Glass/CuPc/GO/Perovskite结构的PL图^[18]

Fig. 10. The luminescence spectra of structure of 1: Glass/Perovskite, 2: Glass/CuPc/Perovskite, 3: Glass/CuPc/Al₂O₃/Perovskite and 4: Glass/CuPc/GO/Perovskite^[18]

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图 11 电子传输层与吸收层之间的缓冲层能级图

Fig. 11. Energy level diagram of the buffer layer between the electron transport layer and the absorption layer.

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图 12 在85 ℃下, 对两种不同厚度的PCBM缓冲层加热168小时后, 获得的基于CH₃NH₃PbI₃吸收层钙钛矿太阳电池归一化的V_oc, J_sc, FF和PCE^[41]

Fig. 12. After heating 168 hours of two different thicknesses of PCBM buffer at 85 ℃, obtained a normalized V_oc, J_sc, FF and PCE based on CH₃NH₃PbI₃ absorber layer perovskite solar cells^[41].

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图 13 ITO/ZnO/TiO₂(x cycle)/钙钛矿结构的XRD图(a)和PL图(b)^[17]

Fig. 13. XRD patterns (a) and PL spectra (b) of perovskite films on Glass/ITO/ZnO/TiO₂ (x cycles) substrates with various x values^[17].

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图 14 PET/SnO₂/Perovskite和PET/SnO₂/C₆₀-SAM/Perovskite结构的PL图谱(a)和 TRPL图谱(b)^[45]

Fig. 14. Steady-state photoluminescence spectra and photoluminescence decay of perovskite films with and without C₆₀-SAM^[45]: (a) PL spectra; (b) TRPL spectra.

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[1]	Snaith H J 2013 J. Phys. Chem. Lett. 4 3623 Google Scholar
[2]	Green M A, Ho-Baillie A, Snaith H J 2014 Nat. Photonics 8 506 Google Scholar
[3]	Stranks S D, Snaith H J 2015 Nat. Nanotechnol. 10 391 Google Scholar
[4]	Yang W S, Noh J H, Jeon N J, Kim Y C, Ryu S, Seo J, SeoK S I 2015 Science 348 1234 Google Scholar
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[10]	Qiu J H, Yang S H 2019 Chem. Rec. 20 209
[11]	Wang B, Iocozzia J, Zhang M, Ye M D, Yan S C, Jin H L, Wang S, Zou Z G, Lin Z Q 2019 Chem. Soc. Rev. 48 4854 Google Scholar
[12]	Leijtens T, Eperon G E, Noel N K, Habisreutinger S N, Petrozza A, Snaith H J 2015 Adv. Energy Mater. 5 1500963 Google Scholar
[13]	Chen Y J, Li M H, Chen P 2018 Sci. Rep. 8 7646 Google Scholar
[14]	C ai, C, Zhou K, Guo H Y, Pei Y, Hu Z Y, Zhang J, Zhu Y J 2019 Electrochim. Acta 312 100 Google Scholar
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[17]	Jin T Y, Li W, Li Y Q, Luo Y X, Shen Y, Cheng L P, Tang J X 2018 Adv. Opt. Mater. 6 1801153 Google Scholar
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[20]	Li Y Q, Qi X, Liu G H, Zhang Y Q, Zhu N, Zhang Q H, Guo X, Wang D, Hu H Z, Chen Z J 2019 Org. Electron. 65 19 Google Scholar
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[23]	Chatterjee S, Pal A J 2016 J. Phys. Chem. C 120 1428 Google Scholar
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[26]	L in, W K, Su S H, Yeh M C, Chen C Y, Yokoyama M 2017 Vacuum 140 82 Google Scholar
[27]	Shi J J, Luo Y H, Wei H Y, Luo J H, Dong J, Lv S T, Xiao J Y, Xu Y Z, Zhu L F, Xu X, Wu H J, Li D M, Meng Q B 2014 ACS Appl. Mater. Interfaces 6 9711 Google Scholar
[28]	Matteocci, F, Busby Y, Pireaux J J, Divitini G, Cacovich S, Ducati C, Di Carlo A, 2015 ACS Appl. Mater. Interfaces 7 26176 Google Scholar
[29]	Domanski K, Correa-Baena J P, Mine N, Nazeeruddin M K, Abate A, Saliba M, Tress W, Hagfeldt A, Gratzel M 2016 ACS Nano 10 6306 Google Scholar
[30]	Cacovich S, Cina L, Matteocci F, Divitini G, Midgley P A, Di Carlo A, Ducati C 2017 Nanoscale 9 4700 Google Scholar
[31]	Zhang X W, Liang C J, Sun M J, Zhang H M, Ji C, Guo Z B, Xu Y J, Sun F L, Song Q, He Z Q 2018 Phys. Chem. Chem. Phys. 20 7395 Google Scholar
[32]	Lee M, Ko Y, Min B K, Jun Y 2016 ChemSusChem 9 31 Google Scholar
[33]	Wang F J, Endo M, Mouri S, Miyauchi Y, Ohno Y, Wakamiya A, Murata Y, Matsuda K 2016 Nanoscale 8 11882 Google Scholar
[34]	Ghani F, Kristen J, Riegler H 2012 J. Chem. Eng. Data 57 439 Google Scholar
[35]	Li W Z, Dong H P, Wang L D, Li N, Guo X D, Li J W, Qiu Y 2014 J. Mater. Chem. A 2 13587 Google Scholar
[36]	Najafi L, Taheri B, Martin-Garcia B, Bellani S, Di Girolamo D, Agresti A, Oropesa-Nunez R, Pescetelli S, Vesce L, Calabro E, Prato M, Castillo A E D, Di Carlo A, Bonaccorso F 2018 ACS Nano 12 10736 Google Scholar
[37]	Fang Z M, Liu L, Zhang Z M, Yang S F, Liu F Y, Liu M Z, Ding L M 2019 Sci. Bull. 64 507 Google Scholar
[38]	Zeng Q, Liu L, Xiao Z, Liu F Y, Hua Y, Yuan Y B, Ding L M 2019 Sci. Bull. 64 885 Google Scholar
[39]	Jia X, Zuo C T, Tao S X, Sun K, Zhao Y X, Yang S F, Cheng M, Wang M K, Yuan Y B, Yang J L, Gao F, Xing G C, Wei Z H, Zhang L J, Yip H L, Liu M Z, Shen Q, Yin L W, Han L Y, Liu S Z, Wang L Z, Luo J S, Tan H R, Jin Z W, Ding L M 2019 Sci. Bull. 64 1532 Google Scholar
[40]	Han Q L, Wei Y, Lin R X, Fang Z M, Xiao K, Luo X, Gu S, Zhu J, Ding L M, Tan H R 2019 Sci. Bull. 64 1399 Google Scholar
[41]	Fedros G, Ioannis T P, Gerasimos S A, Stelion A C 2018 Advanced Materials Interfaces 5 1800280
[42]	Zuo L J, Gu Z W, Ye T, Fu W F, Wu G, Li H Y, Chen H Z 2015 J. Am. Chem. Soc. 137 2674 Google Scholar
[43]	Azmi R, Lee C L, Jung I H, Jang S Y 2018 Adv. Energy Mater. 8 1702934 Google Scholar
[44]	Azmi R, Hadmojo W T, Sinaga S, Lee C L, Yoon S C, Jung I H, Jang S Y 2018 Adv. Energy Mater. 8 1701683 Google Scholar
[45]	Liu X Y, Yang X D, Liu X S, Zhao Y N, Chen J Y, Gu Y Z 2018 Appl. Phys. Lett. 113 203903 Google Scholar

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钙钛矿太阳电池中的缓冲层研究进展