搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

忆阻器及其阻变机理研究进展

刘东青 程海峰 朱玄 王楠楠 张朝阳

引用本文:
Citation:

忆阻器及其阻变机理研究进展

刘东青, 程海峰, 朱玄, 王楠楠, 张朝阳

Research progress of memristors and memristive mechanism

Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang
PDF
导出引用
  • 忆阻器是除电阻、电容、电感之外的第四种电路元件,在信息存储、逻辑运算和神经网络等研究领域具有重要的应用前景. 本文综述了忆阻器以及忆阻器材料的研究进展,主要介绍了忆阻器的内涵与特征、阻变机理、材料类型以及应用前景,指出了目前忆阻器研究中需要关注的主要问题,并对以后的发展趋势进行了 展望.
    Memristors are the fourth basic circuit element in addition to the three classical elements: resistor, capacitor, and inductor, which have great application prospects in the fields of information storage, logic operations and neuromorphic networks. The recent development of memristors and memristive mechanism is reviewed, including connotations and characteristics of memristors, memristive mechanism, types of memristive mateirals, and application prospects of memristors. Finally, the key problems and development proposals are presented and a prospect on the development trend is also given.
    • 基金项目: 国家自然科学基金(批准号:21203248)和湖南省高校科技创新团队支持计划资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 21203248) and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province.
    [1]

    Chua L O 1971 IEEE Trans. Circuit Theory 18 507

    [2]

    Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80

    [3]

    Zhu X, Tang Y H, Wu C Q, Wu J J, Yi X 2014 Chin. Phys. B 23 028501

    [4]

    Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 96401(in Chinese)[李智炜, 刘海军, 徐欣 2013 物理学报 62 96401]

    [5]

    Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305

    [6]

    Biolek D, Biolek Z, Biolkova V 2011 Electron. Lett. 47 1385

    [7]

    Adhikari S P, Sah M P, Hyongsuk K, Chua L O 2013 IEEE Trans. Circuits Syst. Regul. Pap. 60 3008

    [8]

    Pershin Y V, Ventra M D 2011 Adv. Phys. 60 145

    [9]

    Chua L O, Sung Mo K 1976 Proc. IEEE 64 209

    [10]

    Chua L 2011 Appl. Phys. A: Mater. 102 765

    [11]

    Prodromakis T, Toumazou C, Chua L 2012 Nat. Mater. 11 478

    [12]

    Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306(in Chinese)[贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 物理学报 61 217306]

    [13]

    Waser R, Aono M 2007 Nat. Mater. 6 833

    [14]

    Yang J J, Strukov D B, Stewart D R 2013 Nat. Nanotechnol. 8 13

    [15]

    Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632

    [16]

    Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 957

    [17]

    Kamiya K, Young Y M, Park S G, Magyari-Köpe B, Nishi Y, Niwa M, Shiraishi K 2012 Appl. Phys. Lett. 100 073502

    [18]

    Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W, Chen L J 2013 Nano Lett. 13 3671

    [19]

    Yoshida C, Kinoshita K, Yamasaki T, Sugiyama Y 2008 Appl. Phys. Lett. 93 042106

    [20]

    Tian H, Chen H Y, Gao B, Yu S, Liang J, Yang Y, Xie D, Kang J, Ren T L, Zhang Y, Wong H S 2013 Nano Lett. 13 651

    [21]

    Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003

    [22]

    Gopalan C, Ma Y, Gallo T, Wang J, Runnion E, Saenz J, Koushan F, Blanchard P, Hollmer S 2011 Solid-State Electron. 58 54

    [23]

    Cuello G 2010 Sci. School 15 24

    [24]

    Hasegawa T, Terabe K, Tsuruoka T, Aono M 2012 Adv. Mater. 24 252

    [25]

    Hirose Y, Hirose H 1976 J. Appl. Phys. 47 2767

    [26]

    West W C 1998 J. Electrochem. Soc. 145 2971

    [27]

    Lin W P, Liu S J, Gong T, Zhao Q, Huang W 2014 Adv. Mater. 26 570

    [28]

    Zhang B 2013 Ph. D. Dissertation (Shanghai: East China University of Science and Technology) (in Chinese)[张斌 2013 博士学位论文 (上海: 华东理工大学)]

    [29]

    Celinska J, Mcwilliams C, Paz De Araujo C, Xue K H 2011 J. Appl. Phys. 109 091603

    [30]

    Zhou Y, Chen X, Ko C, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Device Lett. 34 220

    [31]

    Ha S D, Aydogdu G H, Ramanathan S 2011 Appl. Phys. Lett. 98 012105

    [32]

    Xue K H, Paz de Araujo C A, Celinska J, Mcwilliams C 2011 J. Appl. Phys. 109 091602

    [33]

    Oka T, Nagaosa N 2005 Phys. Rev. Lett. 95 266403

    [34]

    Dubost V, Cren T, Vaju C, Cario L, Corraze B, Janod E, Debontridder F, Roditchev D 2013 Nano Lett. 13 3648

    [35]

    Wong H S P, Raoux S, Sangbum K, Jiale L, Reifenberg J P, Rajendran B, Asheghi M, Goodson K E 2010 Proc. IEEE 98 2201

    [36]

    Ielmini D, Bruchhaus R, Waser R 2011 Phase Transitions 84 570

    [37]

    Yun J B, Kim S, Seo S, Lee M J, Kim D C, Ahn S E, Park Y, Kim J, Shin H 2007 Physica Status Solidi RRL 1 280

    [38]

    Inoue I, Yasuda S, Akinaga H, Takagi H 2008 Phys. Rev. B 77 035105

    [39]

    Shima H, Takano F, Akinaga H, Tamai Y, Inoue I H, Takagi H 2007 Appl. Phys. Lett. 91 012901

    [40]

    Hickmott T W 1962 J. Appl. Phys. 33 2669

    [41]

    Wong H S P, Lee H Y, Yu S, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T, Tsai M J 2012 Proc. IEEE 100 1951

    [42]

    Prakash A, Jana D, Maikap S 2013 Nanoscale Res. Lett. 8 418

    [43]

    Long S, Perniola L, Cagli C, Buckley J, Lian X, Miranda E, Pan F, Liu M, Sune J 2013 Sci. Rep. 3 2929

    [44]

    Choi B J, Torrezan A C, Norris K J, Miao F, Strachan J P, Zhang M X, Ohlberg D A, Kobayashi N P, Yang J J, Williams R S 2013 Nano Lett. 13 3213

    [45]

    Muenstermann R, Menke T, Dittmann R, Waser R 2010 Adv. Mater. 22 4819

    [46]

    Yan Z, Guo Y, Zhang G, Liu J M 2011 Adv. Mater. 23 1351

    [47]

    Liu D, Wang N, Wang G, Shao Z, Zhu X, Zhang C, Cheng H 2013 Appl. Phys. Lett. 102 134105

    [48]

    Liu D, Cheng H, Zhu X, Wang G, Wang N 2013 ACS Appl. Mater. Interfaces 5 11258

    [49]

    Liu D Q, Cheng H F, Wang G, Zhu X, Shao Z Z, Wang N N, Zhang C Y 2013 IEEE Electron Device Lett. 34 1506

    [50]

    Kozicki M N, Balakrishnan M, Gopalan C, Ratnakumar C, Mitkova M 2005 Proceedings of the Non-Volatile Memory Technology Symposium Dallas, United States, November 7-10, 2005 p83

    [51]

    Morales-Masis M, Molen S J V D, Fu W T, Hesselberth M B, Ruitenbeek J M V 2009 Nanotechnology 20 095710

    [52]

    Nayak A, Tsuruoka T, Terabe K, Hasegawa T, Aono M 2011 Nanotechnology 22 235201

    [53]

    Liang X F, Chen Y, Shi L, Lin J, Yin J, Liu Z G 2007 J. Phys. D: Appl. Phys. 40 4767

    [54]

    Liang X F, Chen Y, Chen L, Yin J, Liu Z G 2007 Appl. Phys. Lett. 90 022508

    [55]

    Soni R, Meuffels P, Kohlstedt H, Kugeler C, Waser R 2009 Appl. Phys. Lett. 94 123503

    [56]

    Choi S J, Kim K H, Park G S, Bae H J, Yang W Y, Cho S 2011 IEEE Electron Device Lett. 32 375

    [57]

    Park Y S, Lee S Y, Yoon S M, Jung S W, Yu B G, Lee S J, Yoon S G 2007 Appl. Phys. Lett. 91 162107

    [58]

    Pandian R, Kooi B J, Palasantzas G, De Hosson J T M, Pauza A 2007 Appl. Phys. Lett. 91 152103

    [59]

    Guo X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513

    [60]

    Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Devices 54 2762

    [61]

    Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M 2010 Nanotechnology 21 045202

    [62]

    Sakamoto T, Lister K, Banno N, Hasegawa T, Terabe K, Aono M 2007 Appl. Phys. Lett. 91 092110

    [63]

    Lee W, Park J, Son M, Lee J, Jung S, Kim S, Park S, Shin J, Hwang H 2011 IEEE Electron Device Lett. 32 680

    [64]

    Zhuge F, Dai W, He C L, Wang A Y, Liu Y W, Li M, Wu Y H, Cui P, Li R W 2010 Appl. Phys. Lett. 96 163505

    [65]

    Terabe K, Hasegawa T, Nakayama T, Aono M 2005 Nature 433 47

    [66]

    Potember R S, Poehler T O, Cowan D O 1979 Appl. Phys. Lett. 34 405

    [67]

    Yang Y, Ouyang J, Ma L, Tseng R J H, Chu C W 2006 Adv. Funct. Mater. 16 1001

    [68]

    Chu C W, Ouyang J, Tseng J H, Yang Y 2005 Adv. Mater. 17 1440

    [69]

    Kang N G, Cho B, Kang B G, Song S, Lee T, Lee J S 2012 Adv. Mater. 24 385

    [70]

    Lai Y S, Tu C H, Kwong D L, Chen J S 2006 IEEE Electron Device Lett. 27 451

    [71]

    Song Y, Tan Y P, Teo E Y H, Zhu C, Chan D S H, Ling Q D, Neoh K G, Kang E T 2006 J. Appl. Phys. 100 084508

    [72]

    Majee S K, Majumdar H S, Bolognesi A, Pal A J 2006 Synth. Met. 156 828

    [73]

    Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933

    [74]

    Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870

    [75]

    Chai Y, Wu Y, Takei K, Chen H Y, Yu S, Chan P C H, Javey A, Wong H S P 2011 IEEE Trans. Electron Devices 58 3933

    [76]

    Johnson S L, Sundararajan A, Hunley D P, Strachan D R 2010 Nanotechnology 21 125204

    [77]

    He C, Li J, Wu X, Chen P, Zhao J, Yin K, Cheng M, Yang W, Xie G, Wang D, Liu D, Yang R, Shi D, Li Z, Sun L, Zhang G 2013 Adv. Mater. 25 5593

    [78]

    Hwang S K, Lee J M, Kim S, Park J S, Park H I, Ahn C W, Lee K J, Lee T, Kim S O 2012 Nano Lett. 12 2217

    [79]

    Siebeneicher P, Kleemann H, Leo K, Lsem B 2012 Appl. Phys. Lett. 100 193301

    [80]

    Chen Y, Zhang B, Liu G, Zhuang X, Kang E T 2012 Chem. Soc. Rev. 41 4688

    [81]

    Kim H D, An H M, Lee E B, Kim T G 2011 IEEE Trans. Electron Devices 58 3566

    [82]

    Kim H D, An H M, Kim T G 2012 Microelectron. Eng. 98 351

    [83]

    Zhu W, Zhang X, Fu X, Zhou Y, Luo S, Wu X 2012 Phys. Status Solidi A 209 1996

    [84]

    Choi B, Yang J J, Zhang M X, Norris K, Ohlberg D A, Kobayashi N, Medeiros-Ribeiro G, Williams R S 2012 Appl. Phys. A: Mater. 109 1

    [85]

    Liu T Y, Yan T H, Scheuerlein R, Chen Y, Lee J K, Balakrishnan G, Yee G, Zhang H, Yap A, Ouyang J, Sasaki T, Al-Shamma A, Chen C, Gupta M, Hilton G, Kathuria A, Lai V, Matsumoto M, Nigam A, Pai A, Pakhale J, Siau C H, Wu X X, Yin Y, Nagel N, Tanaka Y, Higashitani M, Minvielle T, Gorla C, Tsukamoto T, Yamaguchi T, Okajima M, Okamura T, Takase S, Inoue H, Fasoli L 2014 IEEE J. Solid-State Circuits 49 140

    [86]

    Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R, Williams R S 2010 Nature 464 873

    [87]

    Zhu X, Yang X J, Wu C Q, Xiao N, Wu J J, Yi X 2013 IEEE Trans. Circuits Syst. Express Briefs 60 682

    [88]

    Fang X D 2013 Ph. D. Dissertation (Changsha: National University of Defense Technology) (in Chinese)[方旭东 2013 博士学位论文 (长沙: 国防科学技术大学)]

    [89]

    Hyongsuk K, Sah M P, Changju Y, Roska T, Chua L O 2012 Proc. IEEE 100 2061

    [90]

    Gao B 2013 Ph. D. Dissertation (Beijing: Peking University) (in Chinese)[高滨 2013 博士学位论文(北京: 北京大学)]

    [91]

    Li H T 2011 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese)[李海涛 2011 博士学位论文(南京: 南京大学)]

    [92]

    Li Y, Zhong Y, Xu L, Zhang J, Xu X, Sun H, Miao X 2013 Sci. Rep. 3 1619

    [93]

    L H B, Wan H J, Tang T A 2010 IEEE Electron Device Lett. 31 978

    [94]

    Gao B, Zhang H W, Yu S, Sun B, Liu L F, Liu X Y, Wang Y, Han R Q, Kang J F, Yu B, Wang Y Y 2009 Proceedings of the Symposium on VLSI Technology Hsinchu, China, April 27-29, 2009 p30

    [95]

    Chang W Y, Cheng K J, Tsai J M, Chen H J, Chen F, Tsai M J, Wu T B 2009 Appl. Phys. Lett. 95 042104

    [96]

    Zhuge F, Peng S, He C, Zhu X, Chen X, Liu Y, Li R W 2011 Nanotechnology 22 275204

    [97]

    Liu C Y, Hsu J M 2010 Microelectron. Eng. 87 2504

  • [1]

    Chua L O 1971 IEEE Trans. Circuit Theory 18 507

    [2]

    Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80

    [3]

    Zhu X, Tang Y H, Wu C Q, Wu J J, Yi X 2014 Chin. Phys. B 23 028501

    [4]

    Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 96401(in Chinese)[李智炜, 刘海军, 徐欣 2013 物理学报 62 96401]

    [5]

    Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305

    [6]

    Biolek D, Biolek Z, Biolkova V 2011 Electron. Lett. 47 1385

    [7]

    Adhikari S P, Sah M P, Hyongsuk K, Chua L O 2013 IEEE Trans. Circuits Syst. Regul. Pap. 60 3008

    [8]

    Pershin Y V, Ventra M D 2011 Adv. Phys. 60 145

    [9]

    Chua L O, Sung Mo K 1976 Proc. IEEE 64 209

    [10]

    Chua L 2011 Appl. Phys. A: Mater. 102 765

    [11]

    Prodromakis T, Toumazou C, Chua L 2012 Nat. Mater. 11 478

    [12]

    Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306(in Chinese)[贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 物理学报 61 217306]

    [13]

    Waser R, Aono M 2007 Nat. Mater. 6 833

    [14]

    Yang J J, Strukov D B, Stewart D R 2013 Nat. Nanotechnol. 8 13

    [15]

    Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632

    [16]

    Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 957

    [17]

    Kamiya K, Young Y M, Park S G, Magyari-Köpe B, Nishi Y, Niwa M, Shiraishi K 2012 Appl. Phys. Lett. 100 073502

    [18]

    Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W, Chen L J 2013 Nano Lett. 13 3671

    [19]

    Yoshida C, Kinoshita K, Yamasaki T, Sugiyama Y 2008 Appl. Phys. Lett. 93 042106

    [20]

    Tian H, Chen H Y, Gao B, Yu S, Liang J, Yang Y, Xie D, Kang J, Ren T L, Zhang Y, Wong H S 2013 Nano Lett. 13 651

    [21]

    Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003

    [22]

    Gopalan C, Ma Y, Gallo T, Wang J, Runnion E, Saenz J, Koushan F, Blanchard P, Hollmer S 2011 Solid-State Electron. 58 54

    [23]

    Cuello G 2010 Sci. School 15 24

    [24]

    Hasegawa T, Terabe K, Tsuruoka T, Aono M 2012 Adv. Mater. 24 252

    [25]

    Hirose Y, Hirose H 1976 J. Appl. Phys. 47 2767

    [26]

    West W C 1998 J. Electrochem. Soc. 145 2971

    [27]

    Lin W P, Liu S J, Gong T, Zhao Q, Huang W 2014 Adv. Mater. 26 570

    [28]

    Zhang B 2013 Ph. D. Dissertation (Shanghai: East China University of Science and Technology) (in Chinese)[张斌 2013 博士学位论文 (上海: 华东理工大学)]

    [29]

    Celinska J, Mcwilliams C, Paz De Araujo C, Xue K H 2011 J. Appl. Phys. 109 091603

    [30]

    Zhou Y, Chen X, Ko C, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Device Lett. 34 220

    [31]

    Ha S D, Aydogdu G H, Ramanathan S 2011 Appl. Phys. Lett. 98 012105

    [32]

    Xue K H, Paz de Araujo C A, Celinska J, Mcwilliams C 2011 J. Appl. Phys. 109 091602

    [33]

    Oka T, Nagaosa N 2005 Phys. Rev. Lett. 95 266403

    [34]

    Dubost V, Cren T, Vaju C, Cario L, Corraze B, Janod E, Debontridder F, Roditchev D 2013 Nano Lett. 13 3648

    [35]

    Wong H S P, Raoux S, Sangbum K, Jiale L, Reifenberg J P, Rajendran B, Asheghi M, Goodson K E 2010 Proc. IEEE 98 2201

    [36]

    Ielmini D, Bruchhaus R, Waser R 2011 Phase Transitions 84 570

    [37]

    Yun J B, Kim S, Seo S, Lee M J, Kim D C, Ahn S E, Park Y, Kim J, Shin H 2007 Physica Status Solidi RRL 1 280

    [38]

    Inoue I, Yasuda S, Akinaga H, Takagi H 2008 Phys. Rev. B 77 035105

    [39]

    Shima H, Takano F, Akinaga H, Tamai Y, Inoue I H, Takagi H 2007 Appl. Phys. Lett. 91 012901

    [40]

    Hickmott T W 1962 J. Appl. Phys. 33 2669

    [41]

    Wong H S P, Lee H Y, Yu S, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T, Tsai M J 2012 Proc. IEEE 100 1951

    [42]

    Prakash A, Jana D, Maikap S 2013 Nanoscale Res. Lett. 8 418

    [43]

    Long S, Perniola L, Cagli C, Buckley J, Lian X, Miranda E, Pan F, Liu M, Sune J 2013 Sci. Rep. 3 2929

    [44]

    Choi B J, Torrezan A C, Norris K J, Miao F, Strachan J P, Zhang M X, Ohlberg D A, Kobayashi N P, Yang J J, Williams R S 2013 Nano Lett. 13 3213

    [45]

    Muenstermann R, Menke T, Dittmann R, Waser R 2010 Adv. Mater. 22 4819

    [46]

    Yan Z, Guo Y, Zhang G, Liu J M 2011 Adv. Mater. 23 1351

    [47]

    Liu D, Wang N, Wang G, Shao Z, Zhu X, Zhang C, Cheng H 2013 Appl. Phys. Lett. 102 134105

    [48]

    Liu D, Cheng H, Zhu X, Wang G, Wang N 2013 ACS Appl. Mater. Interfaces 5 11258

    [49]

    Liu D Q, Cheng H F, Wang G, Zhu X, Shao Z Z, Wang N N, Zhang C Y 2013 IEEE Electron Device Lett. 34 1506

    [50]

    Kozicki M N, Balakrishnan M, Gopalan C, Ratnakumar C, Mitkova M 2005 Proceedings of the Non-Volatile Memory Technology Symposium Dallas, United States, November 7-10, 2005 p83

    [51]

    Morales-Masis M, Molen S J V D, Fu W T, Hesselberth M B, Ruitenbeek J M V 2009 Nanotechnology 20 095710

    [52]

    Nayak A, Tsuruoka T, Terabe K, Hasegawa T, Aono M 2011 Nanotechnology 22 235201

    [53]

    Liang X F, Chen Y, Shi L, Lin J, Yin J, Liu Z G 2007 J. Phys. D: Appl. Phys. 40 4767

    [54]

    Liang X F, Chen Y, Chen L, Yin J, Liu Z G 2007 Appl. Phys. Lett. 90 022508

    [55]

    Soni R, Meuffels P, Kohlstedt H, Kugeler C, Waser R 2009 Appl. Phys. Lett. 94 123503

    [56]

    Choi S J, Kim K H, Park G S, Bae H J, Yang W Y, Cho S 2011 IEEE Electron Device Lett. 32 375

    [57]

    Park Y S, Lee S Y, Yoon S M, Jung S W, Yu B G, Lee S J, Yoon S G 2007 Appl. Phys. Lett. 91 162107

    [58]

    Pandian R, Kooi B J, Palasantzas G, De Hosson J T M, Pauza A 2007 Appl. Phys. Lett. 91 152103

    [59]

    Guo X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513

    [60]

    Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Devices 54 2762

    [61]

    Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M 2010 Nanotechnology 21 045202

    [62]

    Sakamoto T, Lister K, Banno N, Hasegawa T, Terabe K, Aono M 2007 Appl. Phys. Lett. 91 092110

    [63]

    Lee W, Park J, Son M, Lee J, Jung S, Kim S, Park S, Shin J, Hwang H 2011 IEEE Electron Device Lett. 32 680

    [64]

    Zhuge F, Dai W, He C L, Wang A Y, Liu Y W, Li M, Wu Y H, Cui P, Li R W 2010 Appl. Phys. Lett. 96 163505

    [65]

    Terabe K, Hasegawa T, Nakayama T, Aono M 2005 Nature 433 47

    [66]

    Potember R S, Poehler T O, Cowan D O 1979 Appl. Phys. Lett. 34 405

    [67]

    Yang Y, Ouyang J, Ma L, Tseng R J H, Chu C W 2006 Adv. Funct. Mater. 16 1001

    [68]

    Chu C W, Ouyang J, Tseng J H, Yang Y 2005 Adv. Mater. 17 1440

    [69]

    Kang N G, Cho B, Kang B G, Song S, Lee T, Lee J S 2012 Adv. Mater. 24 385

    [70]

    Lai Y S, Tu C H, Kwong D L, Chen J S 2006 IEEE Electron Device Lett. 27 451

    [71]

    Song Y, Tan Y P, Teo E Y H, Zhu C, Chan D S H, Ling Q D, Neoh K G, Kang E T 2006 J. Appl. Phys. 100 084508

    [72]

    Majee S K, Majumdar H S, Bolognesi A, Pal A J 2006 Synth. Met. 156 828

    [73]

    Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933

    [74]

    Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870

    [75]

    Chai Y, Wu Y, Takei K, Chen H Y, Yu S, Chan P C H, Javey A, Wong H S P 2011 IEEE Trans. Electron Devices 58 3933

    [76]

    Johnson S L, Sundararajan A, Hunley D P, Strachan D R 2010 Nanotechnology 21 125204

    [77]

    He C, Li J, Wu X, Chen P, Zhao J, Yin K, Cheng M, Yang W, Xie G, Wang D, Liu D, Yang R, Shi D, Li Z, Sun L, Zhang G 2013 Adv. Mater. 25 5593

    [78]

    Hwang S K, Lee J M, Kim S, Park J S, Park H I, Ahn C W, Lee K J, Lee T, Kim S O 2012 Nano Lett. 12 2217

    [79]

    Siebeneicher P, Kleemann H, Leo K, Lsem B 2012 Appl. Phys. Lett. 100 193301

    [80]

    Chen Y, Zhang B, Liu G, Zhuang X, Kang E T 2012 Chem. Soc. Rev. 41 4688

    [81]

    Kim H D, An H M, Lee E B, Kim T G 2011 IEEE Trans. Electron Devices 58 3566

    [82]

    Kim H D, An H M, Kim T G 2012 Microelectron. Eng. 98 351

    [83]

    Zhu W, Zhang X, Fu X, Zhou Y, Luo S, Wu X 2012 Phys. Status Solidi A 209 1996

    [84]

    Choi B, Yang J J, Zhang M X, Norris K, Ohlberg D A, Kobayashi N, Medeiros-Ribeiro G, Williams R S 2012 Appl. Phys. A: Mater. 109 1

    [85]

    Liu T Y, Yan T H, Scheuerlein R, Chen Y, Lee J K, Balakrishnan G, Yee G, Zhang H, Yap A, Ouyang J, Sasaki T, Al-Shamma A, Chen C, Gupta M, Hilton G, Kathuria A, Lai V, Matsumoto M, Nigam A, Pai A, Pakhale J, Siau C H, Wu X X, Yin Y, Nagel N, Tanaka Y, Higashitani M, Minvielle T, Gorla C, Tsukamoto T, Yamaguchi T, Okajima M, Okamura T, Takase S, Inoue H, Fasoli L 2014 IEEE J. Solid-State Circuits 49 140

    [86]

    Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R, Williams R S 2010 Nature 464 873

    [87]

    Zhu X, Yang X J, Wu C Q, Xiao N, Wu J J, Yi X 2013 IEEE Trans. Circuits Syst. Express Briefs 60 682

    [88]

    Fang X D 2013 Ph. D. Dissertation (Changsha: National University of Defense Technology) (in Chinese)[方旭东 2013 博士学位论文 (长沙: 国防科学技术大学)]

    [89]

    Hyongsuk K, Sah M P, Changju Y, Roska T, Chua L O 2012 Proc. IEEE 100 2061

    [90]

    Gao B 2013 Ph. D. Dissertation (Beijing: Peking University) (in Chinese)[高滨 2013 博士学位论文(北京: 北京大学)]

    [91]

    Li H T 2011 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese)[李海涛 2011 博士学位论文(南京: 南京大学)]

    [92]

    Li Y, Zhong Y, Xu L, Zhang J, Xu X, Sun H, Miao X 2013 Sci. Rep. 3 1619

    [93]

    L H B, Wan H J, Tang T A 2010 IEEE Electron Device Lett. 31 978

    [94]

    Gao B, Zhang H W, Yu S, Sun B, Liu L F, Liu X Y, Wang Y, Han R Q, Kang J F, Yu B, Wang Y Y 2009 Proceedings of the Symposium on VLSI Technology Hsinchu, China, April 27-29, 2009 p30

    [95]

    Chang W Y, Cheng K J, Tsai J M, Chen H J, Chen F, Tsai M J, Wu T B 2009 Appl. Phys. Lett. 95 042104

    [96]

    Zhuge F, Peng S, He C, Zhu X, Chen X, Liu Y, Li R W 2011 Nanotechnology 22 275204

    [97]

    Liu C Y, Hsu J M 2010 Microelectron. Eng. 87 2504

  • [1] 郭慧朦, 梁燕, 董玉姣, 王光义. 蔡氏结型忆阻器的简化及其神经元电路的硬件实现. 物理学报, 2023, 72(7): 070501. doi: 10.7498/aps.72.20222013
    [2] 温新宇, 王亚赛, 何毓辉, 缪向水. 忆阻类脑计算. 物理学报, 2022, 71(14): 140501. doi: 10.7498/aps.71.20220666
    [3] 何朝滔, 卢羽, 李秀林, 陈鹏. 限制电流对Ta/BaTiO3/Al2O3/ITO忆阻器的开关比和稳定性调控. 物理学报, 2022, 71(8): 086102. doi: 10.7498/aps.71.20211999
    [4] 胡炜, 廖建彬, 杜永乾. 一种适用于大规模忆阻网络的忆阻器单元解析建模策略. 物理学报, 2021, 70(17): 178505. doi: 10.7498/aps.70.20210116
    [5] 曾凡菊, 谭永前, 唐孝生, 张小梅, 尹海峰. 非铅卤素钙钛矿及其阻变性能研究进展. 物理学报, 2021, 70(15): 157301. doi: 10.7498/aps.70.20210065
    [6] 史晨阳, 闵光宗, 刘向阳. 蛋白质基忆阻器研究进展. 物理学报, 2020, 69(17): 178702. doi: 10.7498/aps.69.20200617
    [7] 徐威, 王钰琪, 李岳峰, 高斐, 张缪城, 连晓娟, 万相, 肖建, 童祎. 新型忆阻器神经形态电路的设计及其在条件反射行为中的应用. 物理学报, 2019, 68(23): 238501. doi: 10.7498/aps.68.20191023
    [8] 邵楠, 张盛兵, 邵舒渊. 具有感觉记忆的忆阻器模型. 物理学报, 2019, 68(1): 018501. doi: 10.7498/aps.68.20181577
    [9] 邵楠, 张盛兵, 邵舒渊. 具有经验学习特性的忆阻器模型分析. 物理学报, 2019, 68(19): 198502. doi: 10.7498/aps.68.20190808
    [10] 张志超, 王芳, 吴仕剑, 李毅, 弭伟, 赵金石, 张楷亮. 氧分压对Ni/HfOx/TiN阻变存储单元阻变特性的影响. 物理学报, 2018, 67(5): 057301. doi: 10.7498/aps.67.20172194
    [11] 余志强, 刘敏丽, 郎建勋, 钱楷, 张昌华. 基于Au/TiO2/FTO结构忆阻器的开关特性与机理研究. 物理学报, 2018, 67(15): 157302. doi: 10.7498/aps.67.20180425
    [12] 吴洁宁, 王丽丹, 段书凯. 基于忆阻器的时滞混沌系统及伪随机序列发生器. 物理学报, 2017, 66(3): 030502. doi: 10.7498/aps.66.030502
    [13] 袁泽世, 李洪涛, 朱晓华. 基于忆阻器的数模混合随机数发生器. 物理学报, 2015, 64(24): 240503. doi: 10.7498/aps.64.240503
    [14] 刘玉东, 王连明. 基于忆阻器的spiking神经网络在图像边缘提取中的应用. 物理学报, 2014, 63(8): 080503. doi: 10.7498/aps.63.080503
    [15] 田晓波, 徐晖, 李清江. 横截面积参数对钛氧化物忆阻器导电特性的影响. 物理学报, 2014, 63(4): 048401. doi: 10.7498/aps.63.048401
    [16] 李志军, 曾以成, 李志斌. 改进型细胞神经网络实现的忆阻器混沌电路. 物理学报, 2014, 63(1): 010502. doi: 10.7498/aps.63.010502
    [17] 陈然, 周立伟, 王建云, 陈长军, 邵兴隆, 蒋浩, 张楷亮, 吕联荣, 赵金石. 基于Cu/SiOx/Al结构的阻变存储器多值特性及机理的研究. 物理学报, 2014, 63(6): 067202. doi: 10.7498/aps.63.067202
    [18] 许碧荣. 一种最简的并行忆阻器混沌系统. 物理学报, 2013, 62(19): 190506. doi: 10.7498/aps.62.190506
    [19] 韦晓莹, 胡明, 张楷亮, 王芳, 刘凯. 氧化钒薄膜的微结构及阻变特性研究. 物理学报, 2013, 62(4): 047201. doi: 10.7498/aps.62.047201
    [20] 贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫. 界面效应调制忆阻器研究进展. 物理学报, 2012, 61(21): 217306. doi: 10.7498/aps.61.217306
计量
  • 文章访问数:  14367
  • PDF下载量:  3599
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-04-24
  • 修回日期:  2014-05-19
  • 刊出日期:  2014-09-05

/

返回文章
返回