磁斯格明子器件及其应用进展

夏静; 韩宗益; 宋怡凡; 江文婧; 林柳蓉; 张溪超; 刘小晰; 周艳

doi:10.7498/aps.67.20180894

摘要

磁斯格明子是一种具有准粒子特性的拓扑纳米磁畴壁结构.由于磁斯格明子具有较好的稳定性和新奇的动力学特性，并可被磁场、电场、电流等方式调控，有望成为高密度、低耗能、非易失性信息存储及逻辑运算的新兴信息载体.自2009年磁斯格明子首次被实验观测到至今，已有多种基于磁斯格明子的器件概念和原型器件被提出.本文对基于磁斯格明子应用的研究进展进行综述，对现阶段几种具有代表性的磁斯格明子器件应用进行简要介绍、分析和总结，包括基于磁斯格明子的赛道存储器件、逻辑计算器件、类晶体管功能器件和纳米级微波振荡器；同时阐述了几种可能的通过磁斯格明子表达二进制信息元的方法；并展望了磁斯格明子的其他潜在应用以及未来基于磁斯格明子器件应用的发展方向.

关键词:

Abstract

Magnetic skyrmions possess topologically non-trivial particle-like nanoscale domain wall structures, which have reasonably good stability and unique dynamic properties and can be controlled by magnetic fields, electric fields, and electric currents. Therefore, magnetic skyrmions are expected to be used as novel information carriers in the next-generation high-density, low-energy-consumption, and non-volatile information storage and logic computing devices. Since the first experimental observation of magnetic skyrmions in 2009, a number of skyrmion-based device prototypes have been proposed. In this article, we review the recently proposed skyrmion-based devices and applications, including skyrmion-based racetrack memory, logic computing device, transistor-like functional device, and nano-oscillator. We first discuss advantages of skyrmion-based racetrack memory and solutions for some problems we are facing currently. We then introduce the duplication and merging of magnetic skyrmions and the skyrmion-based logic OR and AND gates. We also introduce the switch function of skyrmion-based transistor-like functional device. The switch function is realized via a voltage gate and controlled by the applied voltage as well as the driving spin current. Besides, a brief introduction of the skyrmion-based nano-oscillator is given. In addition, we introduce several possible methods to encode binary information in skyrmion-based devices. Finally, we discuss some possible future novel applications based on magnetic skyrmions.

Keywords:

skyrmion /
magnetism /
topology /
spintronics

作者及机构信息

1.
香港中文大学(深圳) 理工学院, 深圳 518172;

2.
信州大学工学部电子信息系统工程系, 日本 3808553

通信作者: 周艳, zhouyan@cuhk.edu.cn

基金项目: 国家自然科学基金（批准号：11574137）、深圳基础研究基金（批准号：JCYJ20160331164412545，JCYJ20170410171958839）和香港中文大学（深圳）校长基金资助的课题.

Authors and contacts

1.
School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China;

2.
Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan

Corresponding author: Zhou Yan, zhouyan@cuhk.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11574137), Shenzhen Fundamental Research Fund, China (Grant Nos. JCYJ20160331164412545, JCYJ20170410171958839), and the President's Fund of CUHKSZ.

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施引文献

[1]	Mhlbauer S, Binz B, Jonietz F, Pfleiderer C, Rosch A, Neubauer A, Georgii R, Bni P 2009 Science 323 915
[2]	Yu X Z, Onose Y, Kanazawa N, Park J H, Han J H, Matsui Y, Nagaosa N, Tokura Y 2010 Nature 465 901
[3]	Heinze S, von Bergmann K, Menzel M, Brede J, Kubetzka A, Wiesendanger R, Bihlmayer G, Blgel S 2011 Nat. Phys. 7 713
[4]	Romming N, Kubetzka A, Hanneken C, von Bergmann K, Wiesendanger R 2015 Phys. Rev. Lett. 114 177203
[5]	Chen G, Mascaraque A, N'Diaye A T, Schmid A K 2015 Appl. Phys. Lett. 106 242404
[6]	Du H, DeGrave J P, Xue F, Liang D, Ning W, Yang J, Tian M, Zhang Y, Jin S 2014 Nano Lett. 14 2026
[7]	Jiang W, Upadhyaya P, Zhang W, Yu G, Jungfleisch M B, Fradin F Y, Pearson J E, Tserkovnyak Y, Wang K L, Heinonen O, te Velthuis S G E, Hoffmann A 2015 Science 349 283
[8]	Jiang W, Zhang X, Yu G, Zhang W, Wang X, Benjamin Jungfleisch M, Pearson J E, Cheng X, Heinonen O, Wang K L, Zhou Y, Hoffmann A, te Velthuis S G E 2017 Nat. Phys. 13 162
[9]	Woo S, Song K M, Zhang X, Zhou Y, Ezawa M, Liu X, Finizio S, Raabe J, Lee N J, Kim S I, Park S Y, Kim Y, Kim J Y, Lee D, Lee O, Choi J W, Min B C, Koo H C, Chang J 2018 Nat. Commun. 9 959
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[65]	Zhang X C, Zhou Y, Ezawa M, Zhao G P, Zhao W 2015 Sci. Rep. 5 11369
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[69]	Kim J V, Garcia Sanchez F, Sampaio J, Moreau-Luchaire C, Cros V, Fert A 2014 Phys. Rev. B 90 064410
[70]	Dai Y, Wang H, Yang T, Ren W, Zhang Z 2014 Sci. Rep. 4 6153
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[72]	Li Z X, Chen Y F, Zhou Z W, Nie Y Z, Xia Q L, Wang D W, Guo G H 2017 J. Magn. Magn. Mater. 433 216
[73]	Kiselev S I, Sankey J C, Krivorotov I N, Emley N C, Schoelkopf R J, Buhrman R A, Ralph D C 2003 Nature 425 380
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[79]	Huang Y, Kang W, Zhang X, Zhou Y, Zhao W 2017 Nanotechnology 28 08LT02
[80]	Li S, Kang W, Huang Y, Zhang X, Zhou Y, Zhao W 2017 Nanotechnology 28 31LT01

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