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研究了非晶氧化锌镓铟薄膜晶体管(amorphous InGaZnO thin-film transistor, InGaZnO TFT)的泄漏电流模型. 基于Poole-Frenkel热发射效应和热离子场致发射效应的泄漏电流产生机制, 分别得到了高电场和低电场条件下的载流子产生-复合率. 在此基础上推导得到了InGaZnO TFT的分段式泄漏电流-电压数学模型, 并利用平滑函数得到了关断区和亚阈区连续统一的泄漏电流模型. 所提出的泄漏电流模型的计算值和TCAD模拟值与实验结果较为吻合. 利用所提出的InGaZnO TFT泄漏电流模型和TCAD模拟, 讨论了InGaZnO TFT不同的沟道宽度、沟道长度和栅介质层厚度对泄漏电流值的影响. 研究结果对InGaZnO TFT集成传感电路的设计具有一定参考价值.
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关键词:
- InGaZnO /
- 泄漏电流 /
- thin-film transistor /
- 器件模型
In recent years, amorphous InGaZnO thin-film transistor (InGaZnO TFT) has attracted intensive attention. Due to its high mobility, low off-state current, and excellent uniformity over large fabrication area, the InGaZnO TFTs promise to replace silicon-based TFTs in flat panel displays, optical image sensors, touch sensing and fingerprint sensing area. The on-state performances of InGaZnO TFT are used in thin film transistor liquid crystal display, active-matrix organic light emitting display, etc. Consequently, numerous on-current models have been proposed previously. However, for lots of the emerging sensing applications such as optical image sensors, the leakage current of InGaZnO TFTs is critical. Previous literature has shown that the leakage current generation mechanisms in TFTs include trap-assisted thermal emission, trap-assisted field emission, inter-band tunneling, and auxiliary thermal electron field emission containing Poole-Frenkel effect. However, up to now, there has been few reports on the leakage current model of InGaZnO TFT, which hinders further the development of emerging applications in InGaZnO TFTs for sensor and imagers integrated in display panels. In this paper, the leakage current model of InGaZnO TFT is established on the basis of carrier generation recombination rate. The feasibility of the proposed model is proved by comparing the TCAD simulations with the measured results. In addition, the influences of geometrical parameters on the leakage current of InGaZnO TFT, i.e. the channel width, the active layer thickness, and the gate dielectric thickness, are analyzed in detail. This research gives insightful results for designing the sensors and circuits by using the InGaZnO TFTs. -
Keywords:
- InGaZnO /
- leakage current /
- thin-film transistor /
- device model
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图 2 IGZO TFT电学特性曲线实验与数值模拟比较 (a) IDS-VGS转移特性曲线; (b) IDS-VDS输出特性曲线
Fig. 2. The comparison of IGZO TFT electrical characteristic curve in experiment and numerical simulation: (a) IDS-VGS transfer characteristic curve; (b) IDS-VDS output characteristic curve.
图 3 模型计算值与TCAD模拟值的对比(VDS = 2, 4, 6, 8, 10 V)
Fig. 3. Comparison between model calculation and numerical simulation results (VDS = 2, 4, 6, 8, 10 V).
图 4 InGaZnO TFT在不同宽度(W = 200, 300, 400, 500
${\text{μ}}{\rm{m}}$ )下泄漏电流与栅源电压的关系Fig. 4. Relationship between leakage current and gate-source voltage under different widths of InGaZnO TFT (W = 200, 300, 400, 500
${\text{μ}}{\rm{m}}$ ).
图 5 InGaZnO TFT在不同沟道长度 (L = 50, 60, 70, 80, 90
${\text{μ}}{\rm{m}}$ )下泄漏电流与栅源电压的关系Fig. 5. Relationship between leakage current and gate-source voltage for different lengths of InGaZnO TFT (L = 50, 60, 70, 80, 90
${\text{μ}}{\rm{m}}$ ).
图 6 InGaZnO TFT在不同栅氧化层厚度(tSiOx = 150, 200, 250 nm)下泄漏电流与栅源电压的关系
Fig. 6. Relationship between leakage current and gate-source voltage of InGaZnO TFT with different gate oxide thickness (tSiOx = 150, 200, 250 nm).
表 1 InGaZnO TFT器件结构的几何参数
Table 1. Geometric parameters of InGaZnO TFT device structure.
参数 数值 栅介质层厚度/nm 150 a-InGaZnO半导体层厚度/nm 40 沟道宽度/${\text{μ}}{\rm{m}}$ 300 沟道长度/${\text{μ}}{\rm{m}}$ 50 
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表 2 InGaZnO缺陷态密度模型参数
Table 2. Density of states model parameters for InGaZnO.
参数 描述 数值 单位 nta 导带尾类受主能态密度 1.04 × 1019 cm–3·eV–1 ntd 价带尾类施主能态密度 5.0 × 1020 cm–3·eV–1 wta 类受主态特征能量 0.04 eV wtd 类施主态特征能量 0.1 eV nga 高斯分布的受主态密度 0 cm–3·eV–1 ngd 高斯分布的施主态密度 2.0 × 1016 cm–3·eV–1 egd 高斯分布施主能态峰值能量 2.9 eV wgd 高斯分布施主能态特征能量 0.1 eV
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[1] Kim Y, Kim Y, Lee H 2014 J. Disp. Technol. 10 80
Google Scholar
[2] Qian C, Sun J, Zhang L, Huang H, Yang J, Gao Y 2015 J. Phys. Chem. C 119 14965
Google Scholar
[3] Zhang C, Luo Q, Wu H, Li H, Lai J, Ji G, Yan L, Wang X, Zhang D, Lin J, Chen L, Yang J, Ma C 2017 Org. Electron. 45 190
Google Scholar
[4] Zheng Z, Jiang J, Guo J, Sun J, Yang J 2016 Org. Electron. 33 311
Google Scholar
[5] Liu F, Qian C, Sun J, Liu P, Huang Y, Gao Y, Yang J 2016 Appl. Phys. A: Mater. 122 311
Google Scholar
[6] Zhao C, Kanicki J 2014 Med. Phys. 41 091902
Google Scholar
[7] Seo W K, Pi J E, Cho S H, Kang S Y, Ahn S D, Hwang C S, Jeon H S, Kim J U, Lee M H 2018 Sensors 18 293
Google Scholar
[8] Geng D, Chen Y F, Mativenga M, Jang J 2017 IEEE Electr. Dev. Lett. 38 391
[9] Kumomi H, Yaginuma S, Omura H, Goyal A, Sato A, Watanabe M, Shimada M, Kaji N, Takahashi K, Ofuji M, Watanabe T, Itagaki N, Shimizu H, Abe K, Tateishi Y, Yabuta H, Iwasaki T, Hayashi R, Aiba T, Sano M 2009 J. Disp. Technol. 5 531
Google Scholar
[10] 覃婷, 黄生祥, 廖聪维, 于天宝, 邓联文 2017 物理学报 66 097101
Google Scholar
Qin T, Huang S X, Liao C W, Yu T B, Deng L W 2017 Acta Phys. Sin. 66 097101
Google Scholar
[11] 覃婷, 黄生祥, 廖聪维, 于天宝, 罗衡, 刘胜, 邓联文 2018 物理学报 67 047302
Google Scholar
Qin T, Huang S X, Liao C W, Yu T B, Liu S, Luo H 2018 Acta Phys. Sin. 67 047302
Google Scholar
[12] Qin T, Liao C W, Huang S X, Yu T B, Deng L W 2018 Jpn. J. Appl. Phys. 57 014301
Google Scholar
[13] Mcdaid L J, Hall S, Eccleston W, Alderman J C 1989 IEEE European Solid State Device Research Conference, Berlin, Germany, September 11–14, 1989 p759
[14] Faughnan B, Ipri A C 1989 IEEE Trans. Electron Dev. 36 101
Google Scholar
[15] Kim C H, Sohn K S, Jin J 1997 J. Appl. Phys. 81 8084
Google Scholar
[16] Dimitriadis C A, Farmakis F V, Brini J, Kamarinos G 2000 J. Appl. Phys. 88 2648
Google Scholar
[17] Seki S, Kogure O, Tsujiyama B 1987 IEEE Electr. Dev. Lett. 8 434
Google Scholar
[18] Lui O K B, Migliorato P 1997 Solid-State Electron. 41 575
Google Scholar
[19] Wu W J, Yao R H, Li S H, Hu Y F, Deng W L 2007 IEEE Trans. Electron Dev. 54 2975
Google Scholar
[20] Servati P, Nathan A 2002 IEEE Trans. Electron Dev. 49 812
Google Scholar
[21] Kamiya T, Nomura K, Hosono H 2010 Sci. Technol. Adv. Mat. 11 044305
Google Scholar
[22] Rottländer P, Hehn M, Schuhl A 2002 Phys. Rev. B 65 054422
Google Scholar
[23] Brotherton S D, Ayres J R, Young N D 1991 Solid-State Electron. 34 671
Google Scholar
[24] Kim C H, Sohn K S, Jin J 1997 J. Appl. Phys. 81 8084
Google Scholar
[25] Jacunski M D, Shur M S, Owusu A A, Ytterdal T, Hack M, Iniguez B 1999 IEEE Trans. Electron Dev. 46 1146
Google Scholar
[26] Hurkx G A M, Klaassen D B M, Knuvers M P G 1992 IEEE Trans. Electron Dev. 39 331
Google Scholar
[27] Bhattacharya S S, Banerjee S K, Nguyen B Y, Tobin P J 1994 IEEE Trans. Electron Dev. 41 221
Google Scholar
[28] Li C, Liao C W, Yu T B, Ke J Y, Huang S X, Deng L W 2018 Chin. Phys. Lett. 35 027032
[29] Yoon J K, Jang Y H, Kim B K, Choi H S, Ahn B C, Lee C 1993 J. Non-Cryst. Solids 164 747
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