-
基于漂移-扩散传输模型、费米狄拉克统计模型以及Shockley-Read-Hall复合模型等, 通过自洽求解薛定谔方程、泊松方程以及载流子连续性方程, 模拟研究了材料结构参数对N极性面GaN/InAlN 高电子迁移率晶体管性能的影响及其物理机制. 结果表明, 增加GaN沟道层的厚度(5—15 nm)与InAlN背势垒层的厚度(10—40 nm), 均使得器件的饱和输出电流增大, 阈值电压发生负向漂移. 器件的跨导峰值随GaN沟道层厚度的增加与InAlN背势垒层厚度的减小而减小. 模拟中, 各种性能参数的变化趋势均随GaN沟道层与InAlN背势垒层厚度的增加而逐渐变缓, 当GaN沟道层厚度超过15 nm、InAlN背势垒层厚度超过40 nm后, 器件的饱和输出电流、阈值电压等参数基本趋于稳定. 材料结构参数对器件性能影响的主要原因可归于器件内部极化效应、能带结构以及沟道中二维电子气的变化.
-
关键词:
- N极性面GaN/InAlN /
- 高电子迁移率晶体管 /
- 结构参数 /
- 电学性能
Based on the drift-diffusion transport model, Fermi-Dirac statistics and Shockley-Read-Hall recombination model, the effect of the structure parameters on the performance of N-polar GaN/InAlN high electron mobility transistor is investigated by self-consistently solving the Schrodinger equation, Poisson equation and carrier continuity equation. The results indicate that the saturation current density of the device increases and the threshold voltage shifts negatively with GaN channel thickness increasing from 5 nm to 15 nm and InAlN back barrier thickness increasing from 10 nm to 40 nm. The maximum transconductance decreases with GaN channel thickness increasing or InAlN back barrier thickness decreasing. The change trends of the various performance parameters become slow gradually with the increase of the thickness of the GaN channel layer and InAlN back barrier layer. When the GaN channel thickness is beyond 15 nm or the InAlN back barrier thickness is more than 40 nm, the saturation current, the threshold voltage and the maximum transconductance tend to be stable. The influence of the structure parameter on the device performance can be mainly attributed to the dependence of the built-in electric field, energy band structure and the two-dimensional electron gas (2DEG) on the thickness of the GaN channel layer and InAlN back barrier layer. The main physical mechanism is explained as follows. As the GaN channel thickness increases from 5 nm to 15 nm, the bending of the energy band in the GaN channel layer is mitigated, which means that the total built-in electric field in this layer decreases. However, the potential energy drop across this GaN channel layer increases, resulting in the fact that the quantum well at the GaN/InAlN interface becomes deeper. So the 2DEG density increases with GaN channel thickness increasing. Furthermore, the saturation current density of the device increases and the threshold voltage shifts negatively. Moreover, due to the larger distance between the gate and the 2DEG channel, the capability of the gate control of the high electron mobility transistor decreases. Similarly, the depth of the GaN/InAlN quantum well increases with InAlN back barrier thickness increasing from 10 nm to 40 nm, which results in the increase of the 2DEG concentration. Meanwhile, the electron confinement in the quantum well is enhanced. Therefore the device saturation current and the maximum transconductance increase with InAlN back barrier thickness increasing.-
Keywords:
- N-polar GaN/InAlN /
- high electron mobility transistor /
- structure parameter /
- electrical performance
[1] Mishra U K, Likun S, Kazior T E, Wu Y F 2008 Proc. IEEE 96 287
Google Scholar
[2] Cao M Y, Zhang K, Chen Y H, Zhang J C, Ma X H, Hao Y 2014 Chin. Phys. B 23 037305
Google Scholar
[3] 黄森, 杨树, 唐智凯, 化梦媛, 王鑫华, 魏珂, 包琦龙, 刘新宇, 陈敬 2016 中国科学: 物理学 力学 天文学 46 107307
Huang S, Yang S, Tang Z K, Hua M Y, Wang X H, Wei K, Bao Q L, Liu X Y, Chen J 2016 Sci. Sin.: Phys. Mech. Astron. 46 107307
[4] Khan M A, Bhattarai A, Kuznia J N, Olson D T 1993 Appl. Phys. Lett. 63 1214
Google Scholar
[5] Xie G, Tang C, Wang T, Guo Q, Zhang B, Sheng K, Wai T N 2013 Chin. Phys. B 22 026103
Google Scholar
[6] 李淑萍, 张志利, 付凯, 于国浩, 蔡勇, 张宝顺 2017 物理学报 66 197301
Google Scholar
Li S P, Zhang Z L, Fu K, Yu G H, Cai Y, Zhang B S 2017 Acta Phys. Sin. 66 197301
Google Scholar
[7] Fitch R C, Walker D E, Green A J, Tetlak S E, Gillespie J K, Gilbert R D, Sutherlin K A, Gouty W D, Theimer J P, Via G D, Chabak K D, Jessen G H 2015 IEEE Electron Device Lett. 36 1004
Google Scholar
[8] 张志荣, 房玉龙, 尹甲运, 郭艳敏, 王波, 王元刚, 李佳, 芦伟立, 高楠, 刘沛, 冯志红 2018 物理学报 67 076801
Google Scholar
Zhang Z R, Fang Y L, Yin J Y, Guo Y M, Wang B, Wang Y G, Li J, Lu W L, Gao N, Liu P, Feng Z H 2018 Acta Phys. Sin. 67 076801
Google Scholar
[9] Han T C, Zhao H D, Peng X C 2019 Chin. Phys. B 28 047302
Google Scholar
[10] Zhao S L, Wang Z Z, Chen D Z, Wang M J, Dai Y, Ma X H, Zhang J C, Hao Y 2019 Chin. Phys. B 28 027301
Google Scholar
[11] Wu Y, Chen C Y, del AlamoJ A 2015 J. Appl. Phys. 117 025707
Google Scholar
[12] Yan D W, Ren J, Yang G F, Xiao S Q, Gu X F, Lu H 2015 IEEE Electron Device Lett. 36 1281
Google Scholar
[13] Xie G, Xu E, Hashemi N, Zhang B, Fu F Y, Ng W T 2012 Chin. Phys. B 21 086105
Google Scholar
[14] Zhang S, Wei K, Ma X H, Zhang Y C, Lei T M 2019 Appl. Phys. Express 12 054007
Google Scholar
[15] Lin H K, Huang F H, Yu H L 2010 Solid-State Electron. 54 582
Google Scholar
[16] Wu S, Ma X H, Yang L, Mi M H, Zhang M, Wu M, Lu Y, Zhang H S, Yi C P, Hao Y 2019 IEEE Electron Device Lett. 40 846
Google Scholar
[17] Tan X, Zhou X Y, Guo H Y, Gu G D, Wang Y G, Song X B, Yin J Y, Lv Y J, Feng Z H 2016 Chin. Phys. Lett. 33 098501
Google Scholar
[18] Liu T T, Zhang K, Zhu G R, Zhou J J, Kong Y C, Yu, X X, Chen T S 2018 Chin. Phys. B 27 047307
Google Scholar
[19] Pardeshi H, Raj G, Pati S, Mohankumar N, Sarkar C K 2013 Superlattices Microstruct. 60 47
Google Scholar
[20] Deen D A, Storm D F, Meyer D J, Bass R, Binari S C, Gougousi T, Evans K R 2014 Appl. Phys. Lett. 105 093503
Google Scholar
[21] Kong Y C, Zhou J J, Kong C, Dong X, Zhang Y T, Lu H Y, Chen T S 2013 Appl. Phys. Lett. 102 043505
Google Scholar
[22] Quan R D, Zhang J C, Xue J S, Zhao Y, Ning J, Lin Z Y, Zhang Y C, Ren Z Y, Hao Y 2016 Chin. Phys. Lett. 33 088102
Google Scholar
[23] 张进成, 郑鹏天, 董作典, 段焕涛, 倪金玉, 张金凤, 郝跃 2009 物理学报 58 3409
Zhang J C, Zheng P T, Dong Z D, Duan H T, Ni J Y, Zhang J F, Hao Y 2009 Acta Phys. Sin. 58 3409
[24] Han T C, Zhao H D, Yang L, Wang Y 2017 Chin. Phys. B 26 107301
Google Scholar
[25] Rajan S, Wong M, Fu Y, Wu F, Speck J S, Mishra U K 2005 Jpn J. Appl. Phys. 44 L1478
Google Scholar
[26] Keller S, Suh C S, Chen Z, Chu R, Rajan S, Fichtenbaum N A, Denbaars S P, Speck J S, Mishra U K 2008 J. Appl. Phys. 103 033708
Google Scholar
[27] Ahmadi E, Wu F, Li H R, Kaun S W, Tahhan M, Hestroffer K, Keller S, Speck J S, Mishra U K 2015 Semicond. Sci. Technol. 30 055012
Google Scholar
[28] Ahmadi E, Keller S, Mishra U K 2016 J. Appl. Phys. 120 115302
Google Scholar
[29] 王现彬, 赵正平, 冯志红 2014 物理学报 63 080202
Wang X B, Zhao Z P, Feng Z H 2014 Acta Phys. Sin. 63 080202
[30] 郝跃, 薛军帅, 张进成 2012 中国科学: 信息科学 42 1577
Hao Y, Xue J S, Zhang J C 2012 Sci. Sin. Inform. 42 1577
[31] 孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1756
Kong Y C, Zheng Y D, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756
[32] Selberherr S 1984 Analysis and Simulation of Semiconductor Devices. (New York: Springer-Verlag) p16
[33] Dong Y, Chen D J, Lu H, Zhang R, Zheng Y D 2018 Int. J. Numer. Modell. Eletron. Networks Devices Fields 31 e2299
[34] Shockley W, Read W T 1952 Phys. Rev. 87 835
Google Scholar
[35] Rakoski A, Diez S, Li H R, Keller S, Ahmadi E, Kurdak C 2019 Appl. Phys. Lett. 114 162102
Google Scholar
[36] Denninghoff D, Lu J, Laurent M, Ahmadi E, Keller S, Mishra U K 2012 70 th Device Research Conference Pennsylvania, USA, June 18−20, 2012 p151
[37] Wong M H, Keller S, Dasgupta N S, Denninghoff D J, Kolluri S, Brown D F, Lu J, Fichtenbaum N A, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars S P, Speck J S, Mishra U K 2013 Semicond. Sci. Technol. 28 074009
Google Scholar
-
图 2 不同GaN沟道层厚度下, N极性面GaN/InAlN HEMT器件的(a) 输出特性、(b) 转移特性和(c) 跨导曲线
Fig. 2. (a) Output characteristics, (b) transfer characteristics, and (c) transconductance curves of N-polar GaN/InAlN HEMTs with different GaN channel thicknesses.
图 3 不同GaN沟道层厚度下, N极性面GaN/InAlN HEMT器件栅极下方的(a)导带结构和(b)电子浓度分布图
Fig. 3. (a) Conduction-band energy diagram and (b) electron distribution in N-polar GaN/InAlN HEMTs with different GaN channel thicknesses.
图 4 不同InAlN背势垒层厚度下, N极性面GaN/InAlN HEMT器件的(a)输出特性、(b) 转移特性和(c)跨导曲线
Fig. 4. (a) Output characteristics, (b) transfer characteristics, and (c) transconductance curves of N-polar GaN/InAlN HEMTs with different InAlN back barrier thicknesses.
图 5 不同InAlN背势垒层厚度下, N极性面GaN/InAlN HEMT器件栅极下方的(a)导带结构(内插图为三角势阱处导带结构的局部放大图), 以及(b) 电子浓度分布图
Fig. 5. (a) Conduction-band energy diagram and (b) electron distribution in N-polar GaN/InAlN HEMTs with different InAlN back barrier thicknesses. The inset in panel (a) is the partial enlarged conduction-band energy of the rectangular quantum well.
-
[1] Mishra U K, Likun S, Kazior T E, Wu Y F 2008 Proc. IEEE 96 287
Google Scholar
[2] Cao M Y, Zhang K, Chen Y H, Zhang J C, Ma X H, Hao Y 2014 Chin. Phys. B 23 037305
Google Scholar
[3] 黄森, 杨树, 唐智凯, 化梦媛, 王鑫华, 魏珂, 包琦龙, 刘新宇, 陈敬 2016 中国科学: 物理学 力学 天文学 46 107307
Huang S, Yang S, Tang Z K, Hua M Y, Wang X H, Wei K, Bao Q L, Liu X Y, Chen J 2016 Sci. Sin.: Phys. Mech. Astron. 46 107307
[4] Khan M A, Bhattarai A, Kuznia J N, Olson D T 1993 Appl. Phys. Lett. 63 1214
Google Scholar
[5] Xie G, Tang C, Wang T, Guo Q, Zhang B, Sheng K, Wai T N 2013 Chin. Phys. B 22 026103
Google Scholar
[6] 李淑萍, 张志利, 付凯, 于国浩, 蔡勇, 张宝顺 2017 物理学报 66 197301
Google Scholar
Li S P, Zhang Z L, Fu K, Yu G H, Cai Y, Zhang B S 2017 Acta Phys. Sin. 66 197301
Google Scholar
[7] Fitch R C, Walker D E, Green A J, Tetlak S E, Gillespie J K, Gilbert R D, Sutherlin K A, Gouty W D, Theimer J P, Via G D, Chabak K D, Jessen G H 2015 IEEE Electron Device Lett. 36 1004
Google Scholar
[8] 张志荣, 房玉龙, 尹甲运, 郭艳敏, 王波, 王元刚, 李佳, 芦伟立, 高楠, 刘沛, 冯志红 2018 物理学报 67 076801
Google Scholar
Zhang Z R, Fang Y L, Yin J Y, Guo Y M, Wang B, Wang Y G, Li J, Lu W L, Gao N, Liu P, Feng Z H 2018 Acta Phys. Sin. 67 076801
Google Scholar
[9] Han T C, Zhao H D, Peng X C 2019 Chin. Phys. B 28 047302
Google Scholar
[10] Zhao S L, Wang Z Z, Chen D Z, Wang M J, Dai Y, Ma X H, Zhang J C, Hao Y 2019 Chin. Phys. B 28 027301
Google Scholar
[11] Wu Y, Chen C Y, del AlamoJ A 2015 J. Appl. Phys. 117 025707
Google Scholar
[12] Yan D W, Ren J, Yang G F, Xiao S Q, Gu X F, Lu H 2015 IEEE Electron Device Lett. 36 1281
Google Scholar
[13] Xie G, Xu E, Hashemi N, Zhang B, Fu F Y, Ng W T 2012 Chin. Phys. B 21 086105
Google Scholar
[14] Zhang S, Wei K, Ma X H, Zhang Y C, Lei T M 2019 Appl. Phys. Express 12 054007
Google Scholar
[15] Lin H K, Huang F H, Yu H L 2010 Solid-State Electron. 54 582
Google Scholar
[16] Wu S, Ma X H, Yang L, Mi M H, Zhang M, Wu M, Lu Y, Zhang H S, Yi C P, Hao Y 2019 IEEE Electron Device Lett. 40 846
Google Scholar
[17] Tan X, Zhou X Y, Guo H Y, Gu G D, Wang Y G, Song X B, Yin J Y, Lv Y J, Feng Z H 2016 Chin. Phys. Lett. 33 098501
Google Scholar
[18] Liu T T, Zhang K, Zhu G R, Zhou J J, Kong Y C, Yu, X X, Chen T S 2018 Chin. Phys. B 27 047307
Google Scholar
[19] Pardeshi H, Raj G, Pati S, Mohankumar N, Sarkar C K 2013 Superlattices Microstruct. 60 47
Google Scholar
[20] Deen D A, Storm D F, Meyer D J, Bass R, Binari S C, Gougousi T, Evans K R 2014 Appl. Phys. Lett. 105 093503
Google Scholar
[21] Kong Y C, Zhou J J, Kong C, Dong X, Zhang Y T, Lu H Y, Chen T S 2013 Appl. Phys. Lett. 102 043505
Google Scholar
[22] Quan R D, Zhang J C, Xue J S, Zhao Y, Ning J, Lin Z Y, Zhang Y C, Ren Z Y, Hao Y 2016 Chin. Phys. Lett. 33 088102
Google Scholar
[23] 张进成, 郑鹏天, 董作典, 段焕涛, 倪金玉, 张金凤, 郝跃 2009 物理学报 58 3409
Zhang J C, Zheng P T, Dong Z D, Duan H T, Ni J Y, Zhang J F, Hao Y 2009 Acta Phys. Sin. 58 3409
[24] Han T C, Zhao H D, Yang L, Wang Y 2017 Chin. Phys. B 26 107301
Google Scholar
[25] Rajan S, Wong M, Fu Y, Wu F, Speck J S, Mishra U K 2005 Jpn J. Appl. Phys. 44 L1478
Google Scholar
[26] Keller S, Suh C S, Chen Z, Chu R, Rajan S, Fichtenbaum N A, Denbaars S P, Speck J S, Mishra U K 2008 J. Appl. Phys. 103 033708
Google Scholar
[27] Ahmadi E, Wu F, Li H R, Kaun S W, Tahhan M, Hestroffer K, Keller S, Speck J S, Mishra U K 2015 Semicond. Sci. Technol. 30 055012
Google Scholar
[28] Ahmadi E, Keller S, Mishra U K 2016 J. Appl. Phys. 120 115302
Google Scholar
[29] 王现彬, 赵正平, 冯志红 2014 物理学报 63 080202
Wang X B, Zhao Z P, Feng Z H 2014 Acta Phys. Sin. 63 080202
[30] 郝跃, 薛军帅, 张进成 2012 中国科学: 信息科学 42 1577
Hao Y, Xue J S, Zhang J C 2012 Sci. Sin. Inform. 42 1577
[31] 孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1756
Kong Y C, Zheng Y D, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756
[32] Selberherr S 1984 Analysis and Simulation of Semiconductor Devices. (New York: Springer-Verlag) p16
[33] Dong Y, Chen D J, Lu H, Zhang R, Zheng Y D 2018 Int. J. Numer. Modell. Eletron. Networks Devices Fields 31 e2299
[34] Shockley W, Read W T 1952 Phys. Rev. 87 835
Google Scholar
[35] Rakoski A, Diez S, Li H R, Keller S, Ahmadi E, Kurdak C 2019 Appl. Phys. Lett. 114 162102
Google Scholar
[36] Denninghoff D, Lu J, Laurent M, Ahmadi E, Keller S, Mishra U K 2012 70 th Device Research Conference Pennsylvania, USA, June 18−20, 2012 p151
[37] Wong M H, Keller S, Dasgupta N S, Denninghoff D J, Kolluri S, Brown D F, Lu J, Fichtenbaum N A, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars S P, Speck J S, Mishra U K 2013 Semicond. Sci. Technol. 28 074009
Google Scholar
下载:
计量
- 文章访问数: 9287
- PDF下载量: 117
- 被引次数: 0
