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过渡金属硫化物单层具有直接带隙, 可产生较强的光致发光, 这一特殊的性质使其在光电器件、光电探测等领域具有广泛的应用前景. 由于只有原子级别的厚度以及存在激子的非辐射复合, 其光致发光效率仍有待提高. 本文设计了一种金膜-二氧化钛光栅-过渡金属硫化物单层组合结构, 可大幅提升过渡金属硫化物单层光致发光效率. 利用Purcell效应对自发辐射速率进行控制, 得到峰值为3.4倍的发光增强. 研究了单层二硫化钨以及单层二硒化钨在设计结构上的光致发光信号, 通过实验证实了过渡金属硫化物单层与亚波长光栅耦合结构中光致发光增强的可行性, 为二维材料在光电器件中的应用提供了一个新思路.Transition metal dichalcogenide (TMDC) monolayers have direct band gaps and can produce strong photoluminescence(PL), thereby possessing a wide application prospect in photoelectric devices and photoelectric detection fields. However, their PL efficiency needs further improving because they are of atomic thickness only, besides, they have non-radiative recombination of excitons. In this study, a combination structure of a gold film, titanium dioxide subwavelength gratings and TMDC monolayers is designed, which can greatly improve PL efficiency of the TMDC monolayers. The spontaneous emission rate can be controlled by the Purcell effect, and the maximum enhancement of photoluminescence is as high as 3.4 times. In this paper, the PL signals of monolayer WS2 and monolayer WSe2 on the designed structure are studied. The feasibility of the enhancement of PL of the TMDC monolayers on the subwavelength grating structure is verified experimentally, which provides a new idea for the application of two-dimensional materials to optoelectronic devices.
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Keywords:
- transition metal dichalcogenides /
- subwavelength grating /
- photoluminescence /
- Purcell effect
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图 1 (a) 探测样品光致发光信号示意图; (b) 光栅SEM图像(插图为局部放大图); (c) 样品光学显微镜图像; (d) 样品暗场图像; (e) 光栅反射谱; (f)光栅散射谱
Fig. 1. (a) schematic diagram, (c) optical microscope images, and (d) dark field of the WS2-grating coupled system; (b) SEM image, (e) reflection spectrum, (f) scattering spectrum of the grating.
图 2 (a) 光栅外和(b) 光栅上单层WS2在不同激发功率PL光谱; (c) 光栅外和光栅上单层WS2光致发光强度与泵浦功率的关系以及对应的PL强度比值; (d) 400 μW泵浦功率下光栅外和光栅上单层WS2 PL光谱
Fig. 2. (a) PL spectra of the WS2 monolayer (a) outside the grating and (b) on the grating at different excitation powers; (c) relationship between the WS2 photoluminescence intensity and the pump power and the fitting curve; (d) PL spectra of the WS2 monolayer at 400 μW pump power.
图 3 (a)—(e)不同激发功率下, 样品上单层WS2光致发光强度扫描图; (f) FDTD模拟计算的场分布
Fig. 3. (a)–(e) Scanning image of the WS2 monolayer’s photoluminescence intensity at different excitation power; (f) field distribution of the grating calculated by FDTD simulation.
图 4 (a) 光栅外和(b) 光栅上的单层WS2在最大激发功率20%—100%下的时间分辨PL谱; (c) 光栅外和(d) 光栅上单层WS2在60%最大激发功率下的荧光寿命及拟合曲线
Fig. 4. Time-resolved PL spectra of the WS2 monolayer (a) outside the grating and (b) on the grating at 20%–100% of the maximum excitation power. Fluorescence lifetime and fitting curve of WS2 monolayer (c) outside the grating and (d) on the grating at 60% of the maximum excitation power.
图 5 (a) 光栅上单层WSe2样品光学显微镜图像以及选取的5个测试位置; (b) 样品中5个不同位置处PL信号; (c) 光栅结构与激发光耦合示意图
Fig. 5. (a) Optical microscope image of the WSe2 monolayer on the grating and the five test locations selected; (b) PL signals at 5 different locations; (c) schematic diagram of the grating coupled with excitation light.
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[1] Splendiani A, Sun L, Zhang Y B, Li T S, Kim J, Chim C Y, Galli G, Wang F 2010 Nano Lett. 10 1271
Google Scholar
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Google Scholar
[3] Li H, Wu J, Yin Z Y, Zhang H 2014 Acc. Chem. Res. 47 1067
Google Scholar
[4] Zhang Y, Chang T R, Zhou B, Cui Y T, Yan H, Liu Z K, Schmitt F, Lee J, Moore R, Chen Y L, Lin H, Jeng H T, Mo S K, Hussain Z, Bansil A, Shen Z X 2014 Nat. Nanotechnol. 9 111
Google Scholar
[5] He K L, Kumar N, Zhao L, Wang Z F, Mak K F, Zhao H, Shan J 2014 Phys. Rev. Lett. 113 026803
Google Scholar
[6] Kormányos A, Zólyomi V, Drummond N D, Rakyta P, Burkard G, Fal’ko V I 2013 Phys. Rev. B 88 045416
Google Scholar
[7] Zhang Y J, Oka T, Suzuki R, Ye J T, Iwasa Y 2014 Science 344 725
Google Scholar
[8] Morpurgo A F 2013 Nat. Phys. 9 532
Google Scholar
[9] Jones A M, Yu H Y, Ghimire N J, Wu S F, Aivazian G, Ross J S, Zhao B, Yan J Q, Mandrus D G, Xiao D, Yao W, Xu X D 2013 Nat. Nanotechnol. 8 634
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[11] Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, Strano M S 2012 Nat. Nanotechnol. 7 699
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[12] Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
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[13] Wang Z F, Jie S, Mak K F 2016 Nat. Nanotechnol. 12 144
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[35] Duong N M H, Xu Z Q, Kianinia M, Su R, Liu Z, Kim S, Bradac C, Tran T T, Wan Y, Li L J, Solntsev A, Liu J, Aharonovich I 2018 ACS Photonics 5 3950
Google Scholar
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