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β-Ga2O3作为第三代宽禁带半导体材料, 具有禁带宽度大(4.9 eV)、击穿电场强, 吸收边正好位于日盲紫外波段(波长200—280 nm)内, 且在近紫外以及整个可见光波段具有较高的透过率, 使得β-Ga2O3是一种非常适合制作日盲紫外光电探测器的材料. 目前在p型β-Ga2O3材料方面的研究还较少, 但p型β-Ga2O3材料的制备对于其光电器件的应用至关重要, 因此成功制备p型β-Ga2O3材料就显得尤为关键. 采用化学气相沉积法在蓝宝石衬底上生长出不同Cu掺杂量的β-Ga2O3薄膜, 并对薄膜的形貌、晶体结构和光电特性进行了测试. 发现随着Cu掺杂量的增加, 样品(
$ \bar 201 $ )晶面的衍射峰向小角度方向发生了移动, 这说明Cu2+替代了Ga3+进入到了Ga2O3晶格中. 此外, 在Cu掺杂β-Ga2O3薄膜上蒸镀Au作为叉指电极, 制备出了金属-半导体-金属结构光电导型日盲紫外探测器, 并对其紫外探测性能进行了研究. 结果表明, 在10 V偏压、254 nm波长紫外光下, 器件的光暗电流比约为3.81×102, 器件的上升时间和下降时间分别是0.11 s和0.13 s. 此外, 在光功率密度为64 μW/cm2时, 器件的响应度和外部量子效率分别是1.72 A/W和841%.Solar-blind UV photodetectors (SBPs) have attracted great attention because they are widely used in missile tracking, fire detection, biochemical analysis, astronomical observations, space-to-space communications, etc. At present, it is found that wide bandgap semiconductor materials such as AlxGa1-xN, Mg1Zn1-xO, diamond and β-Ga2O3 are ideal semiconductor materials for developing high-performance SBPs. The ultra-wide band gap semiconductor material, β-Ga2O3, has a large band gap width of 4.9 eV, strong breakdown electric field, absorption edge located in the solar blind ultraviolet band (200–280 nm), and it also has high transmittance in the near ultraviolet and the whole visible band. Therefore, β-Ga2O3 is a very suitable material for making solar blind UV photodetectors. However, the p-type β-Ga2O3 is difficult to dope, which limits the further development of β-Ga2O3 devices. In this work, the β-Ga2O3 thin films with different Cu doping content are grown on sapphire substrates by chemical vapor deposition method, and the morphology, crystal structure and optical properties of β-Ga2O3 films are measured. The test results show that the surfaces of β-Ga2O3 films with different Cu content are relatively smooth, and the ($ \bar 201 $ ) diffraction peak positions shift toward the lower degree side with the increase of Cu content, which indicates that Cu2+ replaces Ga3+ and enters into the β-Ga2O3 lattice. The optical absorption spectrum measurement indicates that the energy gaps of samples are evidently narrowed with the increase of Cu doping concentration. Hall measurements indicate that the Cu doped β-Ga2O3 thin films have a p-type conductivity with a hole concentration of 7.36 × 1014, 4.83 × 1015 and 1.69 × 1016 cm–3, respectively. In addition, a photoconductive UV detector with metal-semiconductor-metal structure is prepared by evaporating Au on a Cu-doped β-Ga2O3 thin film, and its UV detection performance is studied. The results show that the photocurrent value of the device increases with Cu content increasing. The photo-to-dark current ratio (Il/Id) is about 3.8×102 of 2.4% Cu content device under 254 nm-wavelength light at 10 V. The rise time and decay time are 0.11 s and 0.13 s, respectively. Furthermore, the responsivity and external quantum efficiency can reach 1.72 A/W and 841% under 254 nm-wavelength light with a light intensity of 64 μW/cm2.-
Keywords:
- chemical vapor deposition /
- p-type β-Ga2O3 /
- Cu doping /
- UV photodetector
[1] 谢自力, 张荣, 修向前, 韩平, 刘斌, 陈琳, 俞慧强, 江若琏, 施毅, 郑有炓 2007 物理学报 56 6717
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Xie Z L, Zhang R, Xiu X Q, Han P, Liu B, Chen L, Yu H Q, Jiang R L, Shi Y, Zheng Y D 2007 Acta Phys. Sin. 56 6717
Google Scholar
[2] Zhang C X, Xu C B, Wen G J, Lian Y F 2018 Opt. Eng. 57 053109
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[4] Ouyang W, Teng F, Jiang M M, Fang X S 2017 Small 13 1702177
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Google Scholar
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Google Scholar
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图 1 Cu掺杂β-Ga2O3薄膜日盲紫外探测器结构示意图
Fig. 1. Structural diagram of solar-blind ultraviolet detector based on Cu-doped β-Ga2O3 thin film.
图 2 样品的SEM图 (a)样品A; (b)样品B; (c)样品C
Fig. 2. SEM images of samples: (a) Sample A; (b) sample B; (c) sample C.
图 3 样品的EDS能谱图 (a)样品A; (b)样品B; (c)样品C
Fig. 3. EDS spectra of samples: (a) Sample A; (b) sample B; (c) sample C.
图 4 (a)样品A, B, C的XRD图谱; (b)样品A, B, C放大的(
$\bar 201 $ )衍射峰的XRD图谱Fig. 4. (a) XRD patterns of samples A, B, C; (b) XRD patterns of amplified (
$\bar 201 $ ) diffraction peak of samples A, B, C.
图 6 在黑暗和波长254 nm光照时, 器件的I-V曲线 (a)器件A; (b)器件B; (c)器件C
Fig. 6. I-V curves of devices at dark and wave length of 254 nm illumination: (a) Device A; (b) device B; (c) device C.
图 7 (a) 10 V偏压下, 器件C对波长254 nm紫外光在不同光功率密度下的响应I-t曲线; (b)器件C单个周期的响应-恢复时间曲线
Fig. 7. (a) I-t curves of responses of device C under wave length of 254 nm UV light at different light intensities at 10 V bias; (b) response-recovery time curves of a cycle for device C.
图 8 器件C的响应度和EQE随光功率密度的变化
Fig. 8. Responsivity and EQE of device C with optical power intensity.
表 1 不同Cu掺杂量β-Ga2O3的实验参数
Table 1. Experimental parameters of β-Ga2O3 with different Cu contents.
样品 Ga2O3/CuO
质量比生长温度
/℃反应时间
/minAr流量
/(mL⋅min–1)O2流量
/(mL⋅min–1)A 25∶1 1000 30 200 50 B 25∶2 1000 30 200 50 C 25∶3 1000 30 200 50 
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表 2 样品A, B, C的电学性质
Table 2. Electrical properties of sample A, B, C.
样品 导电类型 载流子浓度/cm–3 霍尔迁移率/
(cm2⋅(V⋅s)–1)A p 7.36×1014 11.64 B p 4.83×1015 7.38 C p 1.69×1016 4.52
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[1] 谢自力, 张荣, 修向前, 韩平, 刘斌, 陈琳, 俞慧强, 江若琏, 施毅, 郑有炓 2007 物理学报 56 6717
Google Scholar
Xie Z L, Zhang R, Xiu X Q, Han P, Liu B, Chen L, Yu H Q, Jiang R L, Shi Y, Zheng Y D 2007 Acta Phys. Sin. 56 6717
Google Scholar
[2] Zhang C X, Xu C B, Wen G J, Lian Y F 2018 Opt. Eng. 57 053109
[3] Alaie Z, Nejad S M, Yousefi M H 2014 J. Mater. Sci. Mater. Electron. 25 852
Google Scholar
[4] Ouyang W, Teng F, Jiang M M, Fang X S 2017 Small 13 1702177
Google Scholar
[5] Fan M M, Liu K W, Zhang Z Z, Li B H, Chen X, Zhao D X, Shan C X, Shen D Z 2014 Appl. Phys. Lett. 105 011117
Google Scholar
[6] Cicek E, McClintock R, Cho C Y, Rahnema B, Razeghi M 2013 Appl. Phys. Lett. 103 191108
Google Scholar
[7] Pearton S J, Yang J C, IV P H C, Ren F, Kim J, Tadjer M J, Mastro M A 2018 Appl. Phys. Rev. 5 011301
Google Scholar
[8] Jubu P R, Yam F K 2020 Sens. Actuators A 312 112141
Google Scholar
[9] Jin C, Park S, Kim H, Lee C 2012 Sens. Actuators B 161 223
Google Scholar
[10] Qian Y P, Guo D Y, Chu X L, Shi H Z, Zhu W K, Wang K, Huang X K, Wang H, Wang S L, Li P G, Zhang X H, Tang W H 2017 Mater. Lett. 209 558
Google Scholar
[11] Wang D, Ge K, Meng D, Chen Z 2023 Mater. Lett. 330 133251
Google Scholar
[12] Zhang C, Li Z, Wang W 2021 Materials 14 5161
Google Scholar
[13] 冯秋菊, 李芳, 李彤彤, 李昀铮, 石博, 李梦轲, 梁红伟 2018 物理学报 67 218101
Google Scholar
Feng Q J, Li F, Li T T, Li Y Z, Shi B, Li M K, Liang H W 2018 Acta Phys. Sin. 67 218101
Google Scholar
[14] Feng Q J, Dong Z J, Liu W, Liang S, Yi Z Q, Yu C, Xie J Z, Song Z 2022 Micro Nanostruct. 167 207255
Google Scholar
[15] Xu C, Shen L, Liu H, Pan X, Ye Z 2021 J. Electron. Mater. 50 2043
Google Scholar
[16] Liu Z, Wang X, Liu Y, Guo D, Li S, Yan Z, Tan C K, Li W, Li P, Tang W 2019 J. Mater. Chem. C 7 13920
Google Scholar
[17] Guo X C, Hao N H, Guo D Y, Wu Z P, An Y H, Chu X L, Li L H, Li P G, Lei M, Tang W H 2016 J. Alloy. Comp. 660 136
Google Scholar
[18] Lin R C, Zheng W, Zhang D, Zhang Z J, Liao Q X, Yang L, Huang F 2018 ACS Appl. Mater. Interfaces 10 22419
Google Scholar
[19] Dong L P, Pang T Q, Yu J G, Wang Y C, Zhu W G, Zheng H D, Yu J H, Jia R X, Zhe C 2019 J. Mater. Chem. C 7 14205
Google Scholar
[20] Chu S Y, Yeh T H, Lee C T, Lee H Y 2022 Mater. Sci. Semicond. Process. 142 106471
Google Scholar
[21] 落巨鑫, 高红丽, 邓金祥, 任家辉, 张庆, 李瑞东, 孟雪 2023 物理学报 72 028502
Google Scholar
Luo J X, Gao H L, Deng J X, Ren J H, Zhang Q, Li R D, Meng X 2023 Acta Phys. Sin. 72 028502
Google Scholar
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