[1] |
Wang Hai-Ling, Wang Ting, Zhang Jian-Jun. Controllable growth of InAs quantum dots on patterned GaAs (001) substrate. Acta Physica Sinica,
2019, 68(11): 117301.
doi: 10.7498/aps.68.20190317
|
[2] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun. Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica,
2014, 63(2): 027401.
doi: 10.7498/aps.63.027401
|
[3] |
Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2013, 62(5): 058101.
doi: 10.7498/aps.62.058101
|
[4] |
Li Ming-Yang, Yu Ming-Lang, Su Qing, Liu Xue-Qin, Xie Er-Qing, Zhang Xiao-Qian. Time influence factor of vanadium oxide nanotube on Si substrate and initial gas sensing test. Acta Physica Sinica,
2012, 61(23): 236101.
doi: 10.7498/aps.61.236101
|
[5] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming. Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2011, 60(2): 028101.
doi: 10.7498/aps.60.028101
|
[6] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2010, 59(11): 8026-8030.
doi: 10.7498/aps.59.8026
|
[7] |
Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si(111). Acta Physica Sinica,
2006, 55(6): 2977-2981.
doi: 10.7498/aps.55.2977
|
[8] |
Chen Nai-Bo, Wu Hui-Zhen, Qiu Dong-Jiang. Structural and optical studies of MgxZn1-xO films grown on sapphire. Acta Physica Sinica,
2004, 53(1): 311-315.
doi: 10.7498/aps.53.311
|
[9] |
Zou Lu, Wang Lei, Huang Jing-Yun, Zhao Bing-Hui, Ye Zhi-Zhen. Structural and photoluminesenct properties of Zn1-xMgxO thin film on silicon. Acta Physica Sinica,
2003, 52(4): 935-938.
doi: 10.7498/aps.52.935
|
[10] |
YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN. INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica,
1997, 46(4): 740-746.
doi: 10.7498/aps.46.740
|
[11] |
GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING. Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica,
1996, 45(4): 647-654.
doi: 10.7498/aps.45.647
|
[12] |
XU ZHI-ZHONG. THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES. Acta Physica Sinica,
1996, 45(1): 126-132.
doi: 10.7498/aps.45.126
|
[13] |
XU ZHI-ZHONG. ELECTRONIC STRUCTURES AND OPTICAL PROPERTIES OF SUPERLATTICES (Si_2)_4/(GaAs)_4 GROWN ON Si(00l). Acta Physica Sinica,
1995, 44(12): 1984-1993.
doi: 10.7498/aps.44.1984
|
[14] |
Xu Zhi-Zhong. . Acta Physica Sinica,
1995, 44(7): 1141-1147.
doi: 10.7498/aps.44.1141
|
[15] |
XU ZHI-ZHONG. THE BOND LENGTHS AND THEIR EFFECTS ON THE ELECTRONIC ENERGY BAND STRUCTURES IN THE GexSi1-x ALLOYS. Acta Physica Sinica,
1994, 43(7): 1111-1117.
doi: 10.7498/aps.43.1111
|
[16] |
ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica,
1993, 42(7): 1121-1128.
doi: 10.7498/aps.42.1121-2
|
[17] |
Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica,
1991, 40(7): 1121-1128.
doi: 10.7498/aps.40.1121
|
[18] |
WEI XING, JIANG WEI-DONG, ZHOU GUO-LIANG, YU MING-REN, WANC XUN. AUGER DEPTH PROFILE ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica,
1991, 40(9): 1514-1519.
doi: 10.7498/aps.40.1514
|
[19] |
ZHOU GUO-LIANG, SHEN XIAO-LIANG, SHENG CHI, JIANG WEI-DONG, YU MING-REN. SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica,
1991, 40(1): 56-63.
doi: 10.7498/aps.40.56
|
[20] |
TIAN LIANG-GUANG, ZHU NAN-CHANG, CHEN JING-YI, LI RUN-SHEN, XU SHUN-SHENG, ZHOU GUO-LIANG. X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE. Acta Physica Sinica,
1991, 40(3): 441-448.
doi: 10.7498/aps.40.441
|