[1] |
Yan Shao-Qi, Gao Ji-Kun, Chen Yue, Ma Yao, Zhu Xiao-Dong. Low-density plasmas generated by electron beams passing through silicon nitride window. Acta Physica Sinica,
2024, 73(14): 144102.
doi: 10.7498/aps.73.20240302
|
[2] |
Li Zhi-Qiang, Tan Xiao-Yu, Duan Xin-Lei, Zhang Jing-Yi, Yang Jia-Yue. Deep learning molecular dynamics simulation on microwave high-temperature dielectric function of silicon nitride. Acta Physica Sinica,
2022, 71(24): 247803.
doi: 10.7498/aps.71.20221002
|
[3] |
Cao Yang, Xi Kai, Xu Yan-Nan, Li Mei, Li Bo, Bi Jin-Shun, Liu Ming. Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell. Acta Physica Sinica,
2019, 68(3): 038501.
doi: 10.7498/aps.68.20181661
|
[4] |
Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong. Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin film. Acta Physica Sinica,
2015, 64(23): 238502.
doi: 10.7498/aps.64.238502
|
[5] |
Zhang Wen-Ping, Ma Zhong-Yuan, Xu Jun, Xu Ling, Li Wei, Chen Kun-Ji, Huang Xin-Fan, Feng Duan. Simulation of localized surface plasmon resonance of hexagonal Ag nanoarrays and amorphous oxidized silicon nitride. Acta Physica Sinica,
2015, 64(17): 177301.
doi: 10.7498/aps.64.177301
|
[6] |
Yu Ben-Hai, Chen Dong. Phase transition, electronic and optical properties of Si3N4 new phases at high pressure with density functional theory. Acta Physica Sinica,
2014, 63(4): 047101.
doi: 10.7498/aps.63.047101
|
[7] |
Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui. Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica,
2014, 63(3): 037801.
doi: 10.7498/aps.63.037801
|
[8] |
Jiang Qiang, Mao Xiu-Juan, Zhou Xi-Ying, Chang Wen-Long, Shao Jia-Jia, Chen Ming. Influence of applied magnetic field on properties of silicon nitride thin film with light trapping structure prepared by R.F. magnetron sputtering. Acta Physica Sinica,
2013, 62(11): 118103.
doi: 10.7498/aps.62.118103
|
[9] |
Ding Wen-Ge, Sang Yun-Gang, Yu Wei, Yang Yan-Bin, Teng Xiao-Yun, Fu Guang-Sheng. Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction. Acta Physica Sinica,
2012, 61(24): 247304.
doi: 10.7498/aps.61.247304
|
[10] |
Zou Xiang-Yun, Yuan Jin-She, Jiang Yi-Xiang. The formation mechanism of the silicon nano-clusters embedded in silicon nitride. Acta Physica Sinica,
2012, 61(14): 148106.
doi: 10.7498/aps.61.148106
|
[11] |
Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng. Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica,
2008, 57(6): 3661-3665.
doi: 10.7498/aps.57.3661
|
[12] |
Wang Quan, Ding Jian-Ning, He Yu-Liang, Xue Wei, Fan Zhen. Mesoscopic mechanical characterization of hydrogenated silicon thin film and the intrinsic relationship with the microstructure. Acta Physica Sinica,
2007, 56(8): 4834-4840.
doi: 10.7498/aps.56.4834
|
[13] |
Fang Shao-Hua, Cheng Xiu-Lan, Huang Ye, Gu Huai-Huai. Investigating the effect of doping amorphous silicon nitride on retention characteristics of SONOS device by DFT calculation. Acta Physica Sinica,
2007, 56(11): 6634-6641.
doi: 10.7498/aps.56.6634
|
[14] |
Zhang Chao, Sun Jiu-Xun, Tian Rong-Gang, Zou Shi-Yong. Analytic equations of state and thermo-physical properties for the α, β, and γ-Si3N4. Acta Physica Sinica,
2007, 56(10): 5969-5973.
doi: 10.7498/aps.56.5969
|
[15] |
Wang Jiu-Min, Chen Kun-Ji, Song Jie, Yu Lin-Wei, Wu Liang-Cai, Li Wei, Huang Xin-Fan. Double-level charge storage in self-aligned doubly-stacked Si nanocrystals in SiNx dielectric. Acta Physica Sinica,
2006, 55(11): 6080-6084.
doi: 10.7498/aps.55.6080
|
[16] |
Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng. Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica,
2003, 52(3): 687-691.
doi: 10.7498/aps.52.687
|
[17] |
TU XIAN-HUA, LI DAO-HUO. BLUE-LIGHT ENHANCEMENT EFFECT IN ION IMPLANTED NANO-Si3N4 QUANTUM DOTS. Acta Physica Sinica,
2000, 49(7): 1383-1385.
doi: 10.7498/aps.49.1383
|
[18] |
YE CHAO, NING ZHAO-YUAN, MA YUN-XIU, SHEN MING-RONG, WANG HAO, GAN ZHAO-QIANG. DIELECTRIC PROPERTIES OF SiNx FILMS DEPOSITED AT LOW TEMPERATURE. Acta Physica Sinica,
1997, 46(6): 1199-1205.
doi: 10.7498/aps.46.1199
|
[19] |
CAI SHU-ZHI, MU JI-MEI, ZHANG LI-DE, CHENG BEN-PEI. A STUDY ON BOND STRUCTURE OF NANOMETER-SIZED AMORPHOUS SILICON NITRIDE SOLIDS IN TERMS OF X-RAY RADIAL DISTRIBUTION FUNCTIONS. Acta Physica Sinica,
1992, 41(10): 1620-1626.
doi: 10.7498/aps.41.1620
|
[20] |
CHEN GUO-MING, CHEN GUO-LIANG, YANG JIE, ZOU SHI-CHANG. INVESTIGATION OF THIN FILM Si3N4 FORMED BY LOW ENERGY ION IMPLANTATION. Acta Physica Sinica,
1988, 37(3): 475-480.
doi: 10.7498/aps.37.475
|