Research and development of GaN photocathode

Li Biao; Chang Ben-Kang; Xu Yuan; Du Xiao-Qing; Du Yu-Jie; Wang Xiao-Hui; Zhang Jun-Ju

doi:10.7498/aps.60.088503

Abstract

Negative electron affinity GaN photocathode with greatly advanced photoelectricity performance is described. The research of GaN photocathode focuses on the three points, i. e. , quantum yield, electron energy distribution and surface model, in the last decade. The domestic research of GaN photocathode is still in its infancy, the basic theory is not established, and preparation technology is not mature. In this paper we review emission mechanism, material growth, surface cleaning, activation process optimization, varied-doping structure design and stability of GaN photocathode. The latest experimental results confirm that the fabrication technology of GaN photocathode is feasible.

Keywords:

GaN /
photocathode /
development

Authors and contacts

1.
Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;
2.
College of Optoelectronic Engineering, Chongqing University, Chongqing 400030, China

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Cited By

[1]	Mizuno I, Nihashi T, Nagai T, Niigaki M, Shimizu Y, Shimano K, Katoh K, Ihara T, Okano K, Matsumoto M, Tachino M 2008 Proc. SPIE 6945 69451N1
[2]
[3]	Razeghi M, Rogalski A 1996 J. Appl. Phys. 79 7433
[4]
[5]	Pearton S J, Zolper J C, Shul R J, Ren F 1999 J. Appl. Phys. 86 1
[6]	Siegmund O, Vallerga J, McPhate J, Malloy J, Tremsin A, Martin A, Ulmer M, Wessels B 2006 Nucl. Instrum. Meth. Phys. Res. A 567 89
[7]
[8]	Ulmer M P, Wessels W B, Shahedipour F, Korotkov R Y, Joseph C, Nihashi T 2001 Proc. SPIE 4288 246
[9]
[10]	Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L, Nihashi T 2002 IEEE J. Quantum Electron. 38 333
[11]
[12]
[13]	Wu C I, Kahn A 2000 Appl. Surf. Sci. 162163 250
[14]
[15]	Wu C I, Kahn A 1999 J. Appl. Phys. 86 3209
[16]	Machuca F 2004 Ph. D. Dissertation (Stanford: Stanford University)
[17]
[18]	Uchiyama S, Takagi Y, Niigaki M, Kan H, Kondoh H 2005 Appl. Phys. Lett. 86 103511
[19]
[20]	Li H R, Shen T J, Dai L Y, Ma J Y 2007 Optoelectron. Techn. 27 73 (in Chinese) [李慧蕊、申屠军、戴丽英、马建一 2007 光电子技术 27 73]
[21]
[22]	Li Z M, Zeng Z Q, Chen Q X 2008 Vac. Cryog. 14 236 (in Chinese) [李朝木、曾正清、陈群霞 2008 真空与低温 14 236]
[23]
[24]	Du X Q, Chang B K, Qian Y S, Fu R G, Gao P, Qiao J L 2010 Chin. J. Lasers 37 385 (in Chinese) [杜晓晴、常本康、钱芸生、富容国、高频、乔建良 2010 中国激光 37 385]
[25]
[26]	Du X Q, Chang B K, Qian Y S, Qiao J L, Tian J 2010 Acta Opt. Sin. 30 1 (in Chinese) [杜晓晴、常本康、钱芸生、乔建良、田健 2010 光学学报 30 1]
[27]
[28]
[29]	Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese) [乔建良、田思、常本康、杜晓晴、高频 2009 物理学报 58 5847]
[30]
[31]	Qiao J L, Chang B K, Niu J, Yang Z, Zou J J 2009 Chin. J. Vac. Sci. Technol. 29 115 (in Chinese) [乔建良、常本康、牛军、杨智、邹继军 2009 真空科学与技术学报 29 115]
[32]	Uebbing J J, James L W 1970 J. Appl. Phys. 41 4505
[33]
[34]
[35]	Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815
[36]	Su C Y, Chye P W, Pianetta P, Lindau I, Spicer W E 1979 Surf. Sci. 86 894
[37]
[38]	Gao H R 1987 J. Vac. Sci. Technol. A 5 295
[39]
[40]	Qiao J L, Niu J, Yang Z, Zou J J, Chang B K 2009 Opt. Techn. 35 145 (in Chinese) [乔建良、牛军、杨智、邹继军、常本康 2009 光学技术 35 145]
[41]
[42]	Wang S S, Gu B, Xu Y, Qin F W, Yang D Z 2002 Chin. J. Electron. Dev. 25 1 (in Chinese) [王三胜、顾彪、徐茵、秦福文、杨大智 2002 电子器件 25 1]
[43]
[44]
[45]	Amano H, Sawaki N, Akasaki I, Toyoda Y 1986 Appl. Phys. Lett. 48 353
[46]
[47]	Morko H, Botchkarev A, Salvador A, Sverdlov B 1995 J. Cryst. Growth 150 887
[48]	Molnar R J, Gtz W, Romano L T, Johnson N M 1997 J. Cryst. Growth 178 147
[49]
[50]
[51]	Yoshida S, Misawa S, Gonda S 1983 Appl. Phys. Lett. 42 427
[52]	Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[53]
[54]
[55]	Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
[56]	Nakamura S, Mukai T, Senoh M, Iwasa N 1992 Jpn. J. Appl. Phys. 31 L139
[57]
[58]
[59]	Zhang G Y, Yang Z J, Tong Y Z, Jin S X, Dang X Z, Wang S M 1997 Chin. Phys. Lett. 14 637
[60]	Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2002 J. Vac. Sci. Technol. A 20 1784
[61]
[62]
[63]	Bourreea L E, Chasseb D R, Thambana P L S, Glossera R 2003 Proc. SPIE 4796 11
[64]	Tracy K M, Mecouch W J, Davis R F, Nemanich R J 2003 J. Appl. Phys. 94 3163
[65]
[66]	Fisher D G 1974 IEEE Trans. Electron Dev. 21 541
[67]
[68]
[69]	Du X Q, Chang B K, Zou J J, Li M 2005 Acta Opt. Sin. 25 1411 (in Chinese) [杜晓晴、常本康、邹继军、李敏 2005光学学报 25 1411]
[70]
[71]	Zou J J, Chang B K 2006 Opt. Eng. 45 054001
[72]	Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良、常本康、杜晓晴、牛军、邹继军 2010 物理学报 59 2855]
[73]
[74]	Durek D, Frommberger F, Reichelt T, Westermann M 1999 Appl. Surf. Sci. 143 319
[75]
[76]
[77]	Qiao J L 2010 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology) (in Chinese) [乔建良 2010 博士学位论文 (南京: 南京理工大学)]
[78]
[79]	Liu Z, Sun Y, Machuca F, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Technol. B 21 1953
[80]
[81]	Tereshchenko O E, Shaǐbler G , Yaroshevich A S 2004 Phys. Solid State 46 1949

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Vol. 60, Issue 8 - 2011-04-20

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