Effect of physical properties of polymer on ion implantation

Huang Yong-Xian; Lü Shi-Xiong; Tian Xiu-Bo; Yang Shi-Qin; Fu Ricky; Chu K Paul; Leng Jin-Song; Li Yao

doi:10.7498/aps.61.105203

Abstract

Plasma immersion ion implantation (PIII) of polymer materials is inherently difficult because the voltage across the sheath is reduced by the voltage drop across the insulator due to dielectric capacitance and charge accumulating on the insulator surface. The spatiotemporal evolutions of plasma sheath, energy and dose of ions are simulated by particle-in-cell (PIC) model for ion implantation into insulator materials. Statistical results can be achieved through scouting each ion motion in the plasma sheath. Based on the PIC model, the secondary electron emission (SEE) coefficient is determined according to the instant energy of implanting ions. Effects of thickness, dielectric constant and SEE coefficient on sheath evolution, dose and energy of incident ions are studied. The ion implantation doses and the share of high-energy incident ions are basically equivalent to the case of implantation of conductor ions, when the polymer thickness is less than 200 m, relative dielectric constant is more than 7, and SEE coefficient is less than 0.5. The numerical simulation of ion implantation into polymer can effectively provide a scientific and experimental basis for PIII of insulators and semiconductors.

Keywords:

Authors and contacts

1.
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;
2.
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China;
3.
Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150001, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50904020, 50974046), the Science and Technology Innovation Research Project of Harbin for Young Scholar (Grant No. 2009RFQXG050), the Fundamental Research Funds for the Central Universities, China (Grant No. HIT. NSRIF. 2012007), and the China Postdoctoral Science Foundation (Grant Nos. 20090460883, 201003419).

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[22]	Kwok D T K, Wang H Y, Zhang Y M, Yeung K W K, Chu P K 2009 J. Appl. Phys. 105 053302
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[26]	Emmert G A 1994 J. Vacuum Sci. Technol. B 12 880
[27]	Shi Y C 1999 J. East China Normal University (Natural Sci.) 3 59 (in Chinese) [施芸城 1999 华东师范大学学报(自然科学版) 3 59]
[28]	Dai Z L, Wang Y N 2002 J. Appl. Phys. 92 6428
[29]	Li X C, Wang Y N 2006 Thin Solid Films 506-507 307
[30]	Barnat E V, Lu T M 2001 J. Appl. Phys. 90 5898
[31]	Oates T W H, Pigott J, McKenzie D R, Bilek M M M 2003 IEEE Trans. Plasma Sci. 31 438
[32]	Ueda M, Tan I H, Dallaqua R S, Rossi J O, Barroso J J, Tabacniks M H 2003 Nucl. Instr. Meth. Phys. Res. B 206 760
[33]	Tian X B, Yang S Q, Huang Y X, Chu P K, Fu R 2004 J. Phys. D: Appl. Phys. 37 50
[34]	Kim D, Economou D J 2004 J. Appl. Phys. 95 3311
[35]	Huang Y X, Tian X B, Yang S Q, Fu R, Chu K P 2007 Acta Phys. Sin. 56 4762 (in Chinese) [黄永宪, 田修波, 杨士勤, Fu R, Chu K P 2007 物理学报 56 4762]
[36]	Liu C S, Wang D Z, Liu T W, Wang Y W 2008 Acta Phys. Sin. 57 6450 (in Chinese) [刘成森, 王德真, 刘天伟, 王艳辉 2008 物理学报 57 6450]

Cited By

[1]	Conrad J R 1987 J. Appl. Phys. 62 777
[2]	Conrad J R, Radtke J L, Dodd R A, Worzala F J, Tran N C 1987 J. Appl. Phys. 62 4591
[3]	Chu K P 2004 J. Vac. Sci. Technol. B 22 289
[4]	Li X C, Wang Y N 2004 Acta Phys. Sin. 53 2666 (in Chinese) [李雪春, 王友年 2004 物理学报 53 2666]
[5]	Wang J L, Zhang G L, Liu Y F, Wang Y N, Liu C Z, Yang S Z 2004 Chin. Phys. 13 65
[6]	Lu Q Y, Li L H, Li J H, Fu R, Chu P K 2009 Appl. Phys. Lett. 95 061503
[7]	Lu Q Y, Wang Z, Li L H, Fu R, Chu P K 2010 J. Appl. Phys. 108 033304
[8]	Zheng Z S, Liu Z L, Zhang G Q, Li N, Fan K, Zhang E X, Yi W B, Chen M, Wang X 2005 Acta Phys. Sin. 54 348 (in Chinese) [郑中山, 刘忠立, 张国强, 李宁, 范楷, 张恩霞, 易万兵, 陈猛, 王曦 2005 物理学报 54 348]
[9]	Polji R H, Yadav A D, Dubey S K, Kumar P, Kanjilal D 2009 Surf. Coat. Techn. 203 2654
[10]	Zhang H H, Zhang C H, Li B S, Zhou L H, Yang Y T, Fu Y C 2009 Acta Phys. Sin. 58 3302 (in Chinese) [张洪华, 张崇宏, 李炳生, 周丽宏, 杨义涛, 付云翀 2009 物理学报 58 3302]
[11]	Zhang D C, Shen Y Y, Huang Y J, Wang Z, Liu C L 2010 Acta Phys. Sin. 59 7974 (in Chinese) [张大成, 申艳艳, 黄元杰, 王卓, 刘昌龙 2010 物理学报 59 7974]
[12]	Liu X F, Jiang C Z, Ren F, Fu Q 2005 Acta Phys. Sin. 54 4633 (in Chinese) [刘向绯, 蒋昌忠, 任峰, 付强 2005 物理学报 54 4633]
[13]	Fu W J, Liu Z W, Liu M, Mu Z X, Zhang Q Y, Guan Q F, Chen K M 2009 Acta Phys. Sin. 58 5693 (in Chinese) [付伟佳, 刘志文, 刘明, 牟宗信, 张庆瑜, 关庆丰, 陈康敏 2009 物理学报 58 5693]
[14]	Gao H, Liao L Z, Zhang Z H 2009 Acta Phys. Sin. 58 427 (in Chinese) [高皓, 廖龙忠, 张朝晖 2009 物理学报 58 427]
[15]	Man B Y, Zhang Y H, Lü G H, Liu A H, Zhang Q G 2005 Acta Phys. Sin. 54 837 (in Chinese) [满宝元, 张运海, 吕国华, 刘爱华, 张庆刚 2005 物理学报 54 837]
[16]	Kwok D T K, Tong L P, Yeung C Y, Remedios C G D, Chu P K 2010 Surf. Coat. Techn. 204 2892
[17]	Tóth A, Kereszturi K, Mohai M, Bertóti I 2010 Surf. Coat. Techn. 204 2898
[18]	Oates T W H, Bilek M M M 2002 J. Appl. Phys. 92 2980
[19]	Fu R, Chu P K, Tian X B 2004 J. Appl. Phys. 95 3319
[20]	Lacoste A, Coeur F L, Arnal Y, Pelletier J, Grattepain C 2001 Surf. Coat. Technol. 135 268
[21]	Tian X B, Fu R, Chen J Y, Chu P K, Brown I G 2002 Nucl. Instr. Meth. Phys. Res. B 187 485
[22]	Kwok D T K, Wang H Y, Zhang Y M, Yeung K W K, Chu P K 2009 J. Appl. Phys. 105 053302
[23]	Allan S Y, Mckenzie D R, Bilek M M M 2010 Plasma Sources Sci. Technol. 19 045002
[24]	Powles R C, McKenzie D R, Meure S J, Swain M V, James N L 2007 Surf. Coat. Technol. 201 7961
[25]	Powles R C, Kwok D T K, McKenzie D R, Bilek M M M 2005 Phys. Plasmas 12 093507-1
[26]	Emmert G A 1994 J. Vacuum Sci. Technol. B 12 880
[27]	Shi Y C 1999 J. East China Normal University (Natural Sci.) 3 59 (in Chinese) [施芸城 1999 华东师范大学学报(自然科学版) 3 59]
[28]	Dai Z L, Wang Y N 2002 J. Appl. Phys. 92 6428
[29]	Li X C, Wang Y N 2006 Thin Solid Films 506-507 307
[30]	Barnat E V, Lu T M 2001 J. Appl. Phys. 90 5898
[31]	Oates T W H, Pigott J, McKenzie D R, Bilek M M M 2003 IEEE Trans. Plasma Sci. 31 438
[32]	Ueda M, Tan I H, Dallaqua R S, Rossi J O, Barroso J J, Tabacniks M H 2003 Nucl. Instr. Meth. Phys. Res. B 206 760
[33]	Tian X B, Yang S Q, Huang Y X, Chu P K, Fu R 2004 J. Phys. D: Appl. Phys. 37 50
[34]	Kim D, Economou D J 2004 J. Appl. Phys. 95 3311
[35]	Huang Y X, Tian X B, Yang S Q, Fu R, Chu K P 2007 Acta Phys. Sin. 56 4762 (in Chinese) [黄永宪, 田修波, 杨士勤, Fu R, Chu K P 2007 物理学报 56 4762]
[36]	Liu C S, Wang D Z, Liu T W, Wang Y W 2008 Acta Phys. Sin. 57 6450 (in Chinese) [刘成森, 王德真, 刘天伟, 王艳辉 2008 物理学报 57 6450]

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Vol. 61, Issue 10 - 2012-05-20

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