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We have investigated the structure and photoluminescence (PL) properties of Se nanocrystals (NCs) obtained by rapid thermal annealing of a-Se films on Si substrate. The size of Se NCs in a trigonal phase increases linearly with increasing temperature. Moreover, three PL peaks located at 1.4, 1.7 and 1.83 eV are observed, which are attributed to the emission of defects in amorphous Se, donor-acceprter pair (DAP) recombination at the interface of amorphous Se and Se NCs, and interband transition of Se crystals, respectively.
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Keywords:
- Si based /
- Se nanocrystals /
- photoluminescence /
- DAP
[1] Zingaro R A, Cooper W C 1974 Selenium (New York: Van Nostrand Reinhold Co.)
[2] Liao Z M, Hou C, Liu L P, Yu D P 2010 Nanoscale Res. Lett. 5 926
[3] Liu P, Ma Y R, Cai W W, Wang Z Z, Wang J, Qi L M, Chen D M 2007 Nanotechnology 18 205704
[4] Song J M, Zhan Y J, Xu A W, Yu S H 2007 Langmuir 23 7321
[5] Zhang H Y, Lu K, Hu Q 1995 J. Phys. : Candens. Matter 7 5327
[6] Rajalakshmi M, Arora A K 1999 Solid State Commun. 110 75
[7] Pan S W, Chen S Y, Li C, Huang W, Lai H K 2011 Thin Solid Films 519 6102
[8] Shah C P, Kumar M, Bajaj P N 2007 Nanotechnology 18 385607
[9] Jiang Z Y, Xie Z X, Xie S Y, Zhang X H, Huang R B, Zheng L S 2003 Chem. Phys. Lett. 36 25
[10] Kumar S 2009 J. Exp. Nanosci 4 341
[11] Golosovsky I V, Smirnov O P, Delaplane R G, Wannberg A, Kibalin Y A, Naberezhnov A A, Vakhrushev S B 2006 Phys. J. B 54 211
[12] He L, Shen Z X, Gu G, Qin L, Tang S H 1999 Chem. Phys. Lett. 300 504
[13] Liao Z M, Hou C, Zhao Q, Liu L P, Yu D P 2009 Appl. Phys. Lett. 95 093104
[14] Pan S W, Qi D F, Chen S Y, Li C, Huang W, Lai H K 2011 Acta Phys. Sin. 60 098108 (in Chinese) [潘书万, 亓东峰, 陈松岩, 李成, 黄巍, 赖虹凯 2011 物理学报 60 098108]
[15] Gates B, Mayers B, Cattle B, Xia Y 2002 Adv. Funct. Mater. 12 219
[16] Mayers B T, Liu K, Sunderland D, Xia Y 2003 Chem. Mater. 15 3852
[17] Warren B E 1969 X-ray Diffraction (New York: Addison-Wesley, chapter 13)
[18] Sun H D, Tang Z K, Zhao W M, Wong G K L 1997 Appl. Phys. Lett. 71 2457
[19] Umehara A, Nitta S, Furukawa H, Nonomura S 1997 Appl. Surf. Sci. 119 176
[20] He L, Shen Z X, Gu G, Qin L, Tang S H 1999 Chem. Phys. Lett. 300 504
[21] Bergman L, Chen X B, Morrison J L, Huso J 2004 J. Appl. Phys. 96 675
[22] Adnane B, Lai Y F, Shieh J M, Holtz P O, Ni W X 2009 Solid-State Electronics 53 862
[23] Boyle D S, Brien P O, Otway D J, Robbe O 1999 J. Mater. Chem. 9 725
[24] Liu B, Cheng C W, Chen R, Shen Z X, Fan H J, Sun H D 2010 J. Phys. Chem. C 114 3407
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[1] Zingaro R A, Cooper W C 1974 Selenium (New York: Van Nostrand Reinhold Co.)
[2] Liao Z M, Hou C, Liu L P, Yu D P 2010 Nanoscale Res. Lett. 5 926
[3] Liu P, Ma Y R, Cai W W, Wang Z Z, Wang J, Qi L M, Chen D M 2007 Nanotechnology 18 205704
[4] Song J M, Zhan Y J, Xu A W, Yu S H 2007 Langmuir 23 7321
[5] Zhang H Y, Lu K, Hu Q 1995 J. Phys. : Candens. Matter 7 5327
[6] Rajalakshmi M, Arora A K 1999 Solid State Commun. 110 75
[7] Pan S W, Chen S Y, Li C, Huang W, Lai H K 2011 Thin Solid Films 519 6102
[8] Shah C P, Kumar M, Bajaj P N 2007 Nanotechnology 18 385607
[9] Jiang Z Y, Xie Z X, Xie S Y, Zhang X H, Huang R B, Zheng L S 2003 Chem. Phys. Lett. 36 25
[10] Kumar S 2009 J. Exp. Nanosci 4 341
[11] Golosovsky I V, Smirnov O P, Delaplane R G, Wannberg A, Kibalin Y A, Naberezhnov A A, Vakhrushev S B 2006 Phys. J. B 54 211
[12] He L, Shen Z X, Gu G, Qin L, Tang S H 1999 Chem. Phys. Lett. 300 504
[13] Liao Z M, Hou C, Zhao Q, Liu L P, Yu D P 2009 Appl. Phys. Lett. 95 093104
[14] Pan S W, Qi D F, Chen S Y, Li C, Huang W, Lai H K 2011 Acta Phys. Sin. 60 098108 (in Chinese) [潘书万, 亓东峰, 陈松岩, 李成, 黄巍, 赖虹凯 2011 物理学报 60 098108]
[15] Gates B, Mayers B, Cattle B, Xia Y 2002 Adv. Funct. Mater. 12 219
[16] Mayers B T, Liu K, Sunderland D, Xia Y 2003 Chem. Mater. 15 3852
[17] Warren B E 1969 X-ray Diffraction (New York: Addison-Wesley, chapter 13)
[18] Sun H D, Tang Z K, Zhao W M, Wong G K L 1997 Appl. Phys. Lett. 71 2457
[19] Umehara A, Nitta S, Furukawa H, Nonomura S 1997 Appl. Surf. Sci. 119 176
[20] He L, Shen Z X, Gu G, Qin L, Tang S H 1999 Chem. Phys. Lett. 300 504
[21] Bergman L, Chen X B, Morrison J L, Huso J 2004 J. Appl. Phys. 96 675
[22] Adnane B, Lai Y F, Shieh J M, Holtz P O, Ni W X 2009 Solid-State Electronics 53 862
[23] Boyle D S, Brien P O, Otway D J, Robbe O 1999 J. Mater. Chem. 9 725
[24] Liu B, Cheng C W, Chen R, Shen Z X, Fan H J, Sun H D 2010 J. Phys. Chem. C 114 3407
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